TWI366591B - Slurry composition for chemical mechanical polishing of metal and polishing method using the same - Google Patents

Slurry composition for chemical mechanical polishing of metal and polishing method using the same

Info

Publication number
TWI366591B
TWI366591B TW097106111A TW97106111A TWI366591B TW I366591 B TWI366591 B TW I366591B TW 097106111 A TW097106111 A TW 097106111A TW 97106111 A TW97106111 A TW 97106111A TW I366591 B TWI366591 B TW I366591B
Authority
TW
Taiwan
Prior art keywords
metal
same
polishing
chemical mechanical
slurry composition
Prior art date
Application number
TW097106111A
Other languages
English (en)
Other versions
TW200916546A (en
Inventor
Homer Chou
Won Lae Kim
Jong Il Noh
In Kyung Lee
Tae Young Lee
Original Assignee
Cheil Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Publication of TW200916546A publication Critical patent/TW200916546A/zh
Application granted granted Critical
Publication of TWI366591B publication Critical patent/TWI366591B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW097106111A 2007-10-10 2008-02-21 Slurry composition for chemical mechanical polishing of metal and polishing method using the same TWI366591B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070102316A KR100949250B1 (ko) 2007-10-10 2007-10-10 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법

Publications (2)

Publication Number Publication Date
TW200916546A TW200916546A (en) 2009-04-16
TWI366591B true TWI366591B (en) 2012-06-21

Family

ID=40533289

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097106111A TWI366591B (en) 2007-10-10 2008-02-21 Slurry composition for chemical mechanical polishing of metal and polishing method using the same

Country Status (7)

Country Link
US (1) US9695347B2 (zh)
EP (1) EP2212397B1 (zh)
JP (1) JP5563465B2 (zh)
KR (1) KR100949250B1 (zh)
CN (1) CN101821354B (zh)
TW (1) TWI366591B (zh)
WO (1) WO2009048203A1 (zh)

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KR100949250B1 (ko) 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
KR101279965B1 (ko) * 2008-12-29 2013-07-05 제일모직주식회사 구리 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
CN101906269A (zh) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 一种金属化学机械抛光的浆料及其使用方法
US8192644B2 (en) * 2009-10-16 2012-06-05 Fujifilm Planar Solutions, LLC Highly dilutable polishing concentrates and slurries
JP2011110637A (ja) * 2009-11-25 2011-06-09 Asahi Glass Co Ltd 磁気ディスク用ガラス基板の製造方法
BR112012027515A2 (pt) * 2010-04-27 2016-07-26 Baker Hughes Inc métodos de formação de compactos policristalinos
CN102452036B (zh) * 2010-10-29 2016-08-24 安集微电子（上海）有限公司 一种钨化学机械抛光方法
TWI456013B (zh) * 2012-04-10 2014-10-11 Uwiz Technology Co Ltd 研磨液組成物
JP2015205348A (ja) * 2012-08-30 2015-11-19 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
US8859428B2 (en) 2012-10-19 2014-10-14 Air Products And Chemicals, Inc. Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
JP6086725B2 (ja) * 2012-12-28 2017-03-01 花王株式会社 シリコンウェーハ用研磨液組成物
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
KR101573113B1 (ko) * 2013-08-30 2015-12-01 엘티씨에이엠 주식회사 화학기계적 연마용 슬러리 조성물
CN104745085B (zh) * 2013-12-25 2018-08-21 安集微电子（上海）有限公司 一种用于钴阻挡层抛光的化学机械抛光液
TWI530557B (zh) * 2014-05-29 2016-04-21 卡博特微電子公司 具高移除速率及低缺陷率之對氧化物與多晶矽及氮化物具有選擇性的ｃｍｐ組合物
CN104342704A (zh) * 2014-10-20 2015-02-11 苏州大学 一种无氧化剂的碱性铝合金抛光液及其制备方法
CN104388092B (zh) * 2014-10-30 2016-08-24 瑞德兴阳新能源技术有限公司 Ⅲ-ⅴ半导体材料非选择性湿法腐蚀液及制备方法与应用
KR101943702B1 (ko) * 2016-05-12 2019-01-29 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
JP6734146B2 (ja) * 2016-08-23 2020-08-05 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
KR102275303B1 (ko) * 2016-10-11 2021-07-12 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 상승된 온도 cmp 조성물 및 이의 사용 방법
CN107011806A (zh) * 2017-04-27 2017-08-04 安徽智诚光学科技有限公司 一种手机液晶触控屏抛光剂及其制备方法
WO2020138737A1 (ko) * 2018-12-28 2020-07-02 주식회사 케이씨텍 일액형 연마 슬러리 조성물 및 이를 이용한 연마 방법
KR102367056B1 (ko) * 2020-02-27 2022-02-25 주식회사 케이씨텍 화학적 기계적 연마용 슬러리 조성물

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Also Published As

Publication number Publication date
CN101821354A (zh) 2010-09-01
EP2212397B1 (en) 2019-10-30
WO2009048203A1 (en) 2009-04-16
EP2212397A4 (en) 2012-12-19
KR20090036987A (ko) 2009-04-15
JP2011501406A (ja) 2011-01-06
EP2212397A1 (en) 2010-08-04
US20090095939A1 (en) 2009-04-16
JP5563465B2 (ja) 2014-07-30
CN101821354B (zh) 2014-07-02
US9695347B2 (en) 2017-07-04
KR100949250B1 (ko) 2010-03-25
TW200916546A (en) 2009-04-16

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