TWI365906B - Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers - Google Patents

Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers

Info

Publication number
TWI365906B
TWI365906B TW093121012A TW93121012A TWI365906B TW I365906 B TWI365906 B TW I365906B TW 093121012 A TW093121012 A TW 093121012A TW 93121012 A TW93121012 A TW 93121012A TW I365906 B TWI365906 B TW I365906B
Authority
TW
Taiwan
Prior art keywords
chemical mechanical
semiconductor wafers
mechanical planarization
reducing erosion
planarization compositions
Prior art date
Application number
TW093121012A
Other languages
English (en)
Chinese (zh)
Other versions
TW200512280A (en
Inventor
Zhendong Liu
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of TW200512280A publication Critical patent/TW200512280A/zh
Application granted granted Critical
Publication of TWI365906B publication Critical patent/TWI365906B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
TW093121012A 2003-08-05 2004-07-14 Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers TWI365906B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/634,964 US7300603B2 (en) 2003-08-05 2003-08-05 Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers

Publications (2)

Publication Number Publication Date
TW200512280A TW200512280A (en) 2005-04-01
TWI365906B true TWI365906B (en) 2012-06-11

Family

ID=33552923

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093121012A TWI365906B (en) 2003-08-05 2004-07-14 Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers

Country Status (7)

Country Link
US (1) US7300603B2 (US07300603-20071127-C00001.png)
EP (1) EP1505134B1 (US07300603-20071127-C00001.png)
JP (1) JP2005123577A (US07300603-20071127-C00001.png)
KR (1) KR20050016171A (US07300603-20071127-C00001.png)
CN (1) CN1317742C (US07300603-20071127-C00001.png)
DE (1) DE602004012357T2 (US07300603-20071127-C00001.png)
TW (1) TWI365906B (US07300603-20071127-C00001.png)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7181476B2 (en) * 2003-04-30 2007-02-20 Oracle International Corporation Flashback database
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20050136670A1 (en) * 2003-12-19 2005-06-23 Ameen Joseph G. Compositions and methods for controlled polishing of copper
US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
JP5135755B2 (ja) * 2005-10-21 2013-02-06 日立化成工業株式会社 銅及び銅合金用研磨剤並びにそれを用いた研磨方法
JP2013214786A (ja) * 2005-11-01 2013-10-17 Hitachi Chemical Co Ltd 銅膜及び絶縁材料膜用研磨材及び研磨方法
US7842192B2 (en) 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
US20070249167A1 (en) * 2006-04-21 2007-10-25 Cabot Microelectronics Corporation CMP method for copper-containing substrates
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US20090317638A1 (en) * 2007-02-20 2009-12-24 Sumitomo Electric Industries, Ltd. Polishing slurry, method for manufacturing the polishing slurry, nitride crystalline material and method for plishing surface of the nitride crystalline material
CN102352187B (zh) 2007-07-05 2015-03-18 日立化成株式会社 金属膜用研磨液及研磨方法
US9202709B2 (en) 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
TWI454561B (zh) * 2008-12-30 2014-10-01 Uwiz Technology Co Ltd A polishing composition for planarizing the metal layer
CN102627916B (zh) * 2012-03-23 2014-09-03 江苏中晶科技有限公司 具有强化功能的玻璃抛光液
TWI611049B (zh) * 2014-10-21 2018-01-11 卡博特微電子公司 腐蝕抑制劑及相關組合物及方法
US9593261B2 (en) * 2015-02-04 2017-03-14 Asahi Glass Company, Limited Polishing agent, polishing method, and liquid additive for polishing
US10676647B1 (en) 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
CN110434680A (zh) * 2019-07-19 2019-11-12 大连理工大学 一种螺旋桨的化学机械抛光液及抛光方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US6143662A (en) * 1998-02-18 2000-11-07 Rodel Holdings, Inc. Chemical mechanical polishing composition and method of polishing a substrate
CA2342332A1 (en) 1998-08-31 2000-03-09 Hiroki Terazaki Abrasive liquid for metal and method for polishing
CN1126152C (zh) * 1998-08-31 2003-10-29 长兴化学工业股份有限公司 半导体制程用的化学机械研磨组合物
EP1833085A1 (en) 1998-12-28 2007-09-12 Hitachi Chemical Company, Ltd. Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
KR100472882B1 (ko) * 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
JP4406111B2 (ja) * 1999-04-28 2010-01-27 花王株式会社 研磨液組成物
JP3912927B2 (ja) * 1999-05-10 2007-05-09 花王株式会社 研磨液組成物
CN1161826C (zh) * 1999-08-26 2004-08-11 日立化成工业株式会社 化学机械研磨用研磨剂及研磨方法
JP4505891B2 (ja) 1999-09-06 2010-07-21 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
JP2001139937A (ja) * 1999-11-11 2001-05-22 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US6355075B1 (en) * 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
JP4637398B2 (ja) * 2001-04-18 2011-02-23 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6485355B1 (en) * 2001-06-22 2002-11-26 International Business Machines Corporation Method to increase removal rate of oxide using fixed-abrasive
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US7300602B2 (en) * 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers

Also Published As

Publication number Publication date
EP1505134A1 (en) 2005-02-09
CN1590487A (zh) 2005-03-09
KR20050016171A (ko) 2005-02-21
DE602004012357D1 (de) 2008-04-24
TW200512280A (en) 2005-04-01
DE602004012357T2 (de) 2009-04-02
US7300603B2 (en) 2007-11-27
EP1505134B1 (en) 2008-03-12
US20050029491A1 (en) 2005-02-10
CN1317742C (zh) 2007-05-23
JP2005123577A (ja) 2005-05-12

Similar Documents

Publication Publication Date Title
TWI365906B (en) Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
GB2416354B (en) Rinsing composition and method for rinsing and manufacturing silicon wafer
EP1811548A4 (en) SEMICONDUCTOR WAFER MANUFACTURING METHOD
EP1965417A4 (en) POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR FORMING COPPER PRINTED CIRCUIT FOR SEMICONDUCTOR INTEGRATED CIRCUIT
AU2003297590A8 (en) Passivative chemical mechanical polishing composition for copper film planarization
AU2003238888A1 (en) Abrasive particles to clean semiconductor wafers during chemical mechanical planarization
EP1946358A4 (en) COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS WITH LOW DIELECTRICITY CONSTANT MATERIALS
TWI339680B (en) Washing liquid composition for semiconductor substrate
IL165581A0 (en) Cleaning compositions for microelectronic substrates
TW200720383A (en) Polishing fluids and methods for CMP
SG120286A1 (en) Cushion for packing disks such as semiconductor wafers
HK1149366A1 (en) Multiband semiconductor compositions for photovoltaic devices
SG117412A1 (en) Semiconductor wafer dividing method
EP1653502A4 (en) SEMICONDUCTOR LAYER
EP1955813A4 (en) PROCESS FOR PRODUCING SILICON WAFER
GB2424516B (en) Protecting thin semiconductor wafers during back-grinding in high-volume production
HK1079336A1 (en) Semiconductor wafer and manufacturing method therefor
SG122919A1 (en) Abrasive-free chemical mechanical polishing compositions and methods relating thereto
EP1668688A4 (en) FABRICATION OF SEMICONDUCTOR COMPONENTS
EP1994112A4 (en) CHEMICAL MECHANICAL POLISHING PASTE AND METHOD OF POLISHING A SEMICONDUCTOR WAFER USING THE SAME
EP1590505A4 (en) COMPOSITION AND PROCESS FOR CHEMICAL AND MECHANICAL PLANARIZATION OF COPPER
SG109612A1 (en) Semiconductor integrated circuit
EP1734565A4 (en) METHOD FOR PRODUCING A SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFERS MADE BY THE METHOD
GB0705541D0 (en) Polishing composition for silicon wafer
EP1811543A4 (en) METHOD FOR PRODUCING A SEMICONDUCTOR WAFERS

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees