TWI350601B - Light-emitting diode, light-emitting device, lighting apparatus, display, and signal light - Google Patents

Light-emitting diode, light-emitting device, lighting apparatus, display, and signal light

Info

Publication number
TWI350601B
TWI350601B TW099110517A TW99110517A TWI350601B TW I350601 B TWI350601 B TW I350601B TW 099110517 A TW099110517 A TW 099110517A TW 99110517 A TW99110517 A TW 99110517A TW I350601 B TWI350601 B TW I350601B
Authority
TW
Taiwan
Prior art keywords
light
display
lighting apparatus
emitting diode
emitting device
Prior art date
Application number
TW099110517A
Other languages
English (en)
Other versions
TW201110416A (en
Inventor
Shigenobu Sekine
Yurina Sekine
Yoshiharu Kuwana
Original Assignee
Napra Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Napra Co Ltd filed Critical Napra Co Ltd
Publication of TW201110416A publication Critical patent/TW201110416A/zh
Application granted granted Critical
Publication of TWI350601B publication Critical patent/TWI350601B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
TW099110517A 2009-09-10 2010-04-06 Light-emitting diode, light-emitting device, lighting apparatus, display, and signal light TWI350601B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009208992A JP4454689B1 (ja) 2009-09-10 2009-09-10 発光ダイオード、発光装置、照明装置、ディスプレイ及び信号灯

Publications (2)

Publication Number Publication Date
TW201110416A TW201110416A (en) 2011-03-16
TWI350601B true TWI350601B (en) 2011-10-11

Family

ID=42260243

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099110517A TWI350601B (en) 2009-09-10 2010-04-06 Light-emitting diode, light-emitting device, lighting apparatus, display, and signal light

Country Status (6)

Country Link
US (1) US7842958B1 (zh)
EP (1) EP2296198A2 (zh)
JP (1) JP4454689B1 (zh)
KR (1) KR100983725B1 (zh)
CN (1) CN102024890B (zh)
TW (1) TWI350601B (zh)

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US8604498B2 (en) * 2010-03-26 2013-12-10 Tsmc Solid State Lighting Ltd. Single phosphor layer photonic device for generating white light or color lights
JP4657374B1 (ja) * 2010-06-16 2011-03-23 有限会社ナプラ 発光ダイオード、発光装置、照明装置及びディスプレイ
KR101798232B1 (ko) * 2010-07-07 2017-11-15 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 발광 시스템
KR20120006410A (ko) 2010-07-12 2012-01-18 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR101150861B1 (ko) * 2010-08-16 2012-06-13 한국광기술원 멀티셀 구조를 갖는 발광다이오드 및 그 제조방법
JP4778107B1 (ja) 2010-10-19 2011-09-21 有限会社ナプラ 発光デバイス、及び、その製造方法
JP5325197B2 (ja) * 2010-11-30 2013-10-23 豊田合成株式会社 発光装置およびその製造方法
KR101717669B1 (ko) * 2010-12-13 2017-03-17 삼성전자주식회사 반도체 발광소자, 반도체 발광소자 제조방법 및 발광장치
KR101209449B1 (ko) * 2011-04-29 2012-12-07 피에스아이 주식회사 풀－칼라 ｌｅｄ 디스플레이 장치 및 그 제조방법
JP5887638B2 (ja) * 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
CN102324458A (zh) * 2011-09-29 2012-01-18 南昌黄绿照明有限公司 具有透明有机支撑基板的半导体发光器件及其制备方法
DE102011116232B4 (de) * 2011-10-17 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
JP5943828B2 (ja) * 2012-03-28 2016-07-05 有限会社 ナプラ 発光デバイス、照明装置、ディスプレイ及び信号灯
CN103377591B (zh) * 2012-04-13 2016-12-21 鸿富锦精密工业（深圳）有限公司 发光二极管显示单元及发光二极管显示器
KR101979944B1 (ko) * 2012-10-18 2019-05-17 엘지이노텍 주식회사 발광소자
KR102065437B1 (ko) * 2013-02-27 2020-01-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
KR102065398B1 (ko) * 2013-02-27 2020-01-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
KR102008313B1 (ko) * 2013-02-14 2019-08-07 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
EP2755245A3 (en) * 2013-01-14 2016-05-04 LG Innotek Co., Ltd. Light emitting device
JP6497647B2 (ja) * 2013-12-24 2019-04-10 パナソニックＩｐマネジメント株式会社 表示装置及び表示装置の製造方法
KR102115755B1 (ko) * 2014-01-03 2020-05-27 한국전자통신연구원 수직형 자외선 발광 다이오드(uv-led) 제조 방법
KR102316325B1 (ko) * 2015-07-06 2021-10-22 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US10938182B2 (en) 2015-08-19 2021-03-02 Soraa Laser Diode, Inc. Specialized integrated light source using a laser diode
US10879673B2 (en) 2015-08-19 2020-12-29 Soraa Laser Diode, Inc. Integrated white light source using a laser diode and a phosphor in a surface mount device package
KR102317874B1 (ko) * 2017-02-09 2021-10-28 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
US11749790B2 (en) 2017-12-20 2023-09-05 Lumileds Llc Segmented LED with embedded transistors
CN108565320B (zh) * 2018-01-12 2019-09-27 厦门乾照光电股份有限公司 一种发光二极管及其制备方法
CN109524526B (zh) * 2018-11-19 2020-07-31 华中科技大学鄂州工业技术研究院 深紫外发光二极管芯片及其制备方法
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
CN110643934A (zh) * 2019-09-20 2020-01-03 深圳市晶相技术有限公司 一种半导体设备

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US6037612A (en) * 1997-09-11 2000-03-14 Kokusai Denshin Denwa Kabushiki Kaisha Semiconductor light emitting device having nanostructure porous silicon and mesostructure porous silicon
JPH11233816A (ja) * 1998-02-13 1999-08-27 Oki Electric Ind Co Ltd 半導体発光装置およびその製造方法
JP3394488B2 (ja) 2000-01-24 2003-04-07 星和電機株式会社 窒化ガリウム系半導体発光素子及びその製造方法
JP2005322722A (ja) * 2004-05-07 2005-11-17 Korai Kagi Kofun Yugenkoshi 発光ダイオード
JP4668722B2 (ja) * 2005-08-02 2011-04-13 日立協和エンジニアリング株式会社 サブマウント及びその製造方法
JP4758712B2 (ja) 2005-08-29 2011-08-31 新光電気工業株式会社 半導体装置の製造方法
JP5486759B2 (ja) * 2006-04-14 2014-05-07 日亜化学工業株式会社 半導体発光素子の製造方法
US20080121903A1 (en) 2006-11-24 2008-05-29 Sony Corporation Method for manufacturing light-emitting diode, light-emitting diode, lightsource cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display, and electronic apparatus
KR20090010623A (ko) * 2007-07-24 2009-01-30 삼성전기주식회사 발광다이오드 소자
JP2009071337A (ja) 2008-12-29 2009-04-02 Mitsubishi Chemicals Corp 発光装置およびそれを用いた照明装置

Also Published As

Publication number Publication date
JP4454689B1 (ja) 2010-04-21
KR100983725B1 (ko) 2010-09-24
EP2296198A2 (en) 2011-03-16
US7842958B1 (en) 2010-11-30
CN102024890B (zh) 2014-01-15
JP2011060996A (ja) 2011-03-24
TW201110416A (en) 2011-03-16
CN102024890A (zh) 2011-04-20

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees