TWI350579B - Integrated circuit device, method for forming and operating an integrated circuit, method for forming and operating a semiconductor device - Google Patents

Integrated circuit device, method for forming and operating an integrated circuit, method for forming and operating a semiconductor device

Info

Publication number
TWI350579B
TWI350579B TW096143663A TW96143663A TWI350579B TW I350579 B TWI350579 B TW I350579B TW 096143663 A TW096143663 A TW 096143663A TW 96143663 A TW96143663 A TW 96143663A TW I350579 B TWI350579 B TW I350579B
Authority
TW
Taiwan
Prior art keywords
operating
forming
integrated circuit
semiconductor device
circuit device
Prior art date
Application number
TW096143663A
Other languages
English (en)
Other versions
TW200830475A (en
Inventor
Shih Wei Wang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200830475A publication Critical patent/TW200830475A/zh
Application granted granted Critical
Publication of TWI350579B publication Critical patent/TWI350579B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW096143663A 2006-11-20 2007-11-19 Integrated circuit device, method for forming and operating an integrated circuit, method for forming and operating a semiconductor device TWI350579B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/602,065 US7994564B2 (en) 2006-11-20 2006-11-20 Non-volatile memory cells formed in back-end-of line processes

Publications (2)

Publication Number Publication Date
TW200830475A TW200830475A (en) 2008-07-16
TWI350579B true TWI350579B (en) 2011-10-11

Family

ID=39416076

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096143663A TWI350579B (en) 2006-11-20 2007-11-19 Integrated circuit device, method for forming and operating an integrated circuit, method for forming and operating a semiconductor device

Country Status (2)

Country Link
US (2) US7994564B2 (zh)
TW (1) TWI350579B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8004060B2 (en) * 2007-11-29 2011-08-23 International Business Machines Corporation Metal gate compatible electrical antifuse
JP2013069947A (ja) * 2011-09-26 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置の製造方法および不揮発性半導体記憶装置
GB201418888D0 (en) 2014-10-23 2014-12-10 Univ Lancaster Improvements relating to electronic memory devices
WO2018174514A1 (ko) * 2017-03-24 2018-09-27 광주과학기술원 다중레벨 저항 및 정전용량 메모리 특성을 갖는 비휘발성 메모리 소자 및 그 제조방법

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5742075A (en) * 1994-10-07 1998-04-21 Iowa State University Research Foundation, Inc. Amorphous silicon on insulator VLSI circuit structures
US6115233A (en) * 1996-06-28 2000-09-05 Lsi Logic Corporation Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region
US6038171A (en) * 1997-03-25 2000-03-14 Altera Corporation Field emission erasable programmable read-only memory
EP1312120A1 (en) * 2000-08-14 2003-05-21 Matrix Semiconductor, Inc. Dense arrays and charge storage devices, and methods for making same
US6531357B2 (en) * 2000-08-17 2003-03-11 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device
US6512263B1 (en) * 2000-09-22 2003-01-28 Sandisk Corporation Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
US6441443B1 (en) * 2001-02-13 2002-08-27 Ememory Technology Inc. Embedded type flash memory structure and method for operating the same
US8253183B2 (en) * 2001-06-28 2012-08-28 Samsung Electronics Co., Ltd. Charge trapping nonvolatile memory devices with a high-K blocking insulation layer
US6989603B2 (en) * 2001-10-02 2006-01-24 Guobiao Zhang nF-Opening Aiv Structures
US6781184B2 (en) * 2001-11-29 2004-08-24 Symetrix Corporation Barrier layers for protecting metal oxides from hydrogen degradation
US6716698B1 (en) * 2002-09-10 2004-04-06 Advanced Micro Devices, Inc. Virtual ground silicide bit line process for floating gate flash memory
US20040129986A1 (en) * 2002-11-28 2004-07-08 Renesas Technology Corp. Nonvolatile semiconductor memory device and manufacturing method thereof
US6774428B1 (en) * 2003-04-03 2004-08-10 Powerchip Semiconductor Corp. Flash memory structure and operating method thereof
KR100471188B1 (ko) * 2003-01-24 2005-03-10 삼성전자주식회사 듀얼 게이트를 갖는 비휘발성 기억 소자 및 그 형성방법
US6845034B2 (en) * 2003-03-11 2005-01-18 Micron Technology, Inc. Electronic systems, constructions for detecting properties of objects, and assemblies for identifying persons
US6902974B2 (en) * 2003-05-16 2005-06-07 Promos Technologies Inc. Fabrication of conductive gates for nonvolatile memories from layers with protruding portions
KR100518577B1 (ko) * 2003-05-26 2005-10-04 삼성전자주식회사 원 타임 프로그래머블 메모리 소자 및 이를 포함하는반도체 집적회로와 그 제조방법
US6958513B2 (en) 2003-06-06 2005-10-25 Chih-Hsin Wang Floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells
US7399655B2 (en) * 2003-08-04 2008-07-15 Ovonyx, Inc. Damascene conductive line for contacting an underlying memory element
US7229880B2 (en) * 2003-11-19 2007-06-12 Promos Technologies Inc. Precision creation of inter-gates insulator
DE10355561A1 (de) * 2003-11-28 2005-06-30 Infineon Technologies Ag Halbleiteranordnung mit nichtflüchtigen Speichern
US7154779B2 (en) * 2004-01-21 2006-12-26 Sandisk Corporation Non-volatile memory cell using high-k material inter-gate programming
US7238575B2 (en) * 2004-03-10 2007-07-03 Promos Technologies, Inc. Fabrication of conductive lines interconnecting conductive gates in nonvolatile memories, and non-volatile memory structures
KR100604871B1 (ko) * 2004-06-17 2006-07-31 삼성전자주식회사 상보형 불휘발성 메모리 소자와 그 동작 방법과 그 제조 방법과 그를 포함하는 논리소자 및 반도체 장치
US7297597B2 (en) * 2004-07-23 2007-11-20 Promos Technologies, Inc. Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics for associated high voltage write transistors and gate dielectrics for low voltage logic transistors by using ISSG
KR100688575B1 (ko) * 2004-10-08 2007-03-02 삼성전자주식회사 비휘발성 반도체 메모리 소자
US8179711B2 (en) * 2004-10-26 2012-05-15 Samsung Electronics Co., Ltd. Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell
JP4535845B2 (ja) * 2004-10-29 2010-09-01 富士通セミコンダクター株式会社 半導体装置
JP2006310662A (ja) * 2005-04-28 2006-11-09 Toshiba Corp 不揮発性半導体メモリ装置
US7279740B2 (en) * 2005-05-12 2007-10-09 Micron Technology, Inc. Band-engineered multi-gated non-volatile memory device with enhanced attributes
US7612403B2 (en) * 2005-05-17 2009-11-03 Micron Technology, Inc. Low power non-volatile memory and gate stack
US7378707B2 (en) * 2005-05-26 2008-05-27 Micron Technology, Inc. Scalable high density non-volatile memory cells in a contactless memory array
JP2006344809A (ja) * 2005-06-09 2006-12-21 Toshiba Corp 半導体装置及びその製造方法
US7636257B2 (en) * 2005-06-10 2009-12-22 Macronix International Co., Ltd. Methods of operating p-channel non-volatile memory devices
US7402850B2 (en) * 2005-06-21 2008-07-22 Micron Technology, Inc. Back-side trapped non-volatile memory device
US7829938B2 (en) * 2005-07-14 2010-11-09 Micron Technology, Inc. High density NAND non-volatile memory device
US7880217B2 (en) * 2005-07-30 2011-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Programmable non-volatile memory (PNVM) device
US7576386B2 (en) * 2005-08-04 2009-08-18 Macronix International Co., Ltd. Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer
KR100849852B1 (ko) * 2005-08-09 2008-08-01 삼성전자주식회사 비휘발성 반도체 집적 회로 장치 및 이의 제조 방법
US7476927B2 (en) * 2005-08-24 2009-01-13 Micron Technology, Inc. Scalable multi-functional and multi-level nano-crystal non-volatile memory device
US7629641B2 (en) * 2005-08-31 2009-12-08 Micron Technology, Inc. Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection
US7429767B2 (en) * 2005-09-01 2008-09-30 Micron Technology, Inc. High performance multi-level non-volatile memory device
US8058696B2 (en) * 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
JP4575320B2 (ja) * 2006-03-15 2010-11-04 株式会社東芝 不揮発性半導体記憶装置
TWI429028B (zh) * 2006-03-31 2014-03-01 Semiconductor Energy Lab 非揮發性半導體記憶體裝置及其製造方法
US7948799B2 (en) * 2006-05-23 2011-05-24 Macronix International Co., Ltd. Structure and method of sub-gate NAND memory with bandgap engineered SONOS devices
US7414889B2 (en) * 2006-05-23 2008-08-19 Macronix International Co., Ltd. Structure and method of sub-gate and architectures employing bandgap engineered SONOS devices
US7486550B2 (en) * 2006-06-06 2009-02-03 Micron Technology, Inc. Semiconductor magnetic memory integrating a magnetic tunneling junction above a floating-gate memory cell
TWI297948B (en) * 2006-06-26 2008-06-11 Ind Tech Res Inst Phase change memory device and fabrications thereof
WO2008005892A2 (en) * 2006-06-30 2008-01-10 Applied Materials, Inc. Nanocrystal formation
JP2008047729A (ja) * 2006-08-17 2008-02-28 Toshiba Corp 半導体記憶装置
US8816422B2 (en) * 2006-09-15 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-trapping layer flash memory cell
US8294197B2 (en) * 2006-09-22 2012-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. Program/erase schemes for floating gate memory cells
JP2008098510A (ja) * 2006-10-13 2008-04-24 Toshiba Corp 不揮発性半導体記憶装置
KR100881181B1 (ko) * 2006-11-13 2009-02-05 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
US8008702B2 (en) * 2008-02-20 2011-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-transistor non-volatile memory element

Also Published As

Publication number Publication date
US20110267897A1 (en) 2011-11-03
US20080116505A1 (en) 2008-05-22
US7994564B2 (en) 2011-08-09
US8247293B2 (en) 2012-08-21
TW200830475A (en) 2008-07-16

Similar Documents

Publication Publication Date Title
TWI348196B (en) An integrated circuit package, system and method therefor
TWI367545B (en) Method for manufacturing a semiconductor device and semiconductor device
EP2012352A4 (en) ELECTRONIC COMPONENT, ELECTRONIC COMPONENT DEVICE THEREFOR AND METHOD OF MANUFACTURING THEREOF
TWI365490B (en) Semiconductor device and method for manufacturing same
TWI366218B (en) Method for manufacturing semiconductor device
EP2068352A4 (en) FILM FOR A SEMICONDUCTOR, METHOD FOR PRODUCING A FILM FOR A SEMICONDUCTOR AND SEMICONDUCTOR COMPONENT
TWI318439B (en) Method for manufacturing semiconductor device
EP2023384A4 (en) ELECTRONIC COMPONENT, SEMICONDUCTOR ASSEMBLY, AND ELECTRONIC DEVICE
TWI341021B (en) Electronic substrate, semiconductor device, and electronic device
EP2015353A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
TWI318442B (en) A semiconductor device and a manufacturing method thereof
EP2061082A4 (en) SEMICONDUCTOR SUBSTRATE FOR SEMICONDUCTOR IMAGE FORMING DEVICE, SEMICONDUCTOR IMAGE FORMING DEVICE, AND METHOD FOR MANUFACTURING SAME
EP2060924A4 (en) CIRCUIT AND METHOD FOR PREDICTING FAILURE AND INTEGRATED CIRCUIT WITH SEMICONDUCTORS
TWI348746B (en) Method for fabricating semiconductor device
EP2322071A4 (en) CONTROL DEVICE AND CONTROL METHOD FOR CLEANING APPARATUS, CLEANING APPARATUS, CONTROL PROGRAM FOR CLEANING APPARATUS, AND INTEGRATED ELECTRONIC CIRCUIT
EP2037497A4 (en) SEMICONDUCTOR PACKAGE, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
EP1984955A4 (en) GaN-BASED LIGHT-EMITTING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1929545A4 (en) SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1843391A4 (en) STACKED ELECTRONIC COMPONENT, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING STACKED ELECTRONIC COMPONENT
EP2096678A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
EP2020023A4 (en) METHOD FOR PRODUCING C4 COMPOUNDS ON IC CHIPS AND COMPONENTS PRODUCED THEREFOR
EP2040192A4 (en) INFORMATION PROCESSING DEVICE, INTEGRATED CIRCUIT, METHOD, AND PROGRAM
EP2092552A4 (en) MANUFACTURING METHOD FOR SEMICONDUCTOR COMPONENTS
EP2063461A4 (en) POLISHING AGENT FOR INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE, POLISHING METHOD, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
EP2048784A4 (en) INTEGRATED SEMICONDUCTOR SWITCHING, PROGRAMMING DEVICE AND ILLUSTRATION DEVICE

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees