EP1929545A4 - Semiconductor light-emitting device and method for making same - Google Patents
Semiconductor light-emitting device and method for making sameInfo
- Publication number
- EP1929545A4 EP1929545A4 EP06791170.1A EP06791170A EP1929545A4 EP 1929545 A4 EP1929545 A4 EP 1929545A4 EP 06791170 A EP06791170 A EP 06791170A EP 1929545 A4 EP1929545 A4 EP 1929545A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- emitting device
- semiconductor light
- making same
- making
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100303217A CN100388515C (en) | 2005-09-30 | 2005-09-30 | Semiconductor light emitting device and manufacturing method for the same |
| PCT/CN2006/002584 WO2007036164A1 (en) | 2005-09-30 | 2006-09-29 | Semiconductor light-emitting device and method for making same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1929545A1 EP1929545A1 (en) | 2008-06-11 |
| EP1929545A4 true EP1929545A4 (en) | 2014-03-05 |
Family
ID=36751610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP06791170.1A Withdrawn EP1929545A4 (en) | 2005-09-30 | 2006-09-29 | Semiconductor light-emitting device and method for making same |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1929545A4 (en) |
| JP (1) | JP2009510730A (en) |
| KR (1) | KR20080049724A (en) |
| CN (1) | CN100388515C (en) |
| WO (1) | WO2007036164A1 (en) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007207869A (en) * | 2006-01-31 | 2007-08-16 | Rohm Co Ltd | Nitride semiconductor light-emitting device |
| DE102007046519A1 (en) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Thin-film LED with a mirror layer and method for its production |
| KR20110006652A (en) * | 2008-03-25 | 2011-01-20 | 라티스 파워(지앙시) 코포레이션 | Semiconductor light-emitting device with double-sided passivation |
| EP2259346B1 (en) * | 2008-03-27 | 2019-07-03 | LG Innotek Co., Ltd. | Light-emitting element and a production method therefor |
| US8502193B2 (en) * | 2008-04-16 | 2013-08-06 | Lg Innotek Co., Ltd. | Light-emitting device and fabricating method thereof |
| JP4871967B2 (en) * | 2009-02-10 | 2012-02-08 | Ｄｏｗａエレクトロニクス株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| JP4583487B2 (en) | 2009-02-10 | 2010-11-17 | Ｄｏｗａエレクトロニクス株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| KR100999726B1 (en) * | 2009-05-04 | 2010-12-08 | 엘지이노텍 주식회사 | Light emitting device and method for fabricating the same |
| KR101154750B1 (en) * | 2009-09-10 | 2012-06-08 | 엘지이노텍 주식회사 | Light emitting device and method for fabricating the same |
| KR100986407B1 (en) * | 2009-10-22 | 2010-10-08 | 엘지이노텍 주식회사 | Light emitting device and method for fabricating the same |
| KR101007077B1 (en) * | 2009-11-06 | 2011-01-10 | 엘지이노텍 주식회사 | Light emitting device, light emitting device package and method for fabricating the same |
| JP5733594B2 (en) * | 2010-02-18 | 2015-06-10 | スタンレー電気株式会社 | Semiconductor light emitting device |
| KR101014071B1 (en) * | 2010-04-15 | 2011-02-10 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system |
| KR101039609B1 (en) * | 2010-05-24 | 2011-06-09 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
| US8502244B2 (en) | 2010-08-31 | 2013-08-06 | Micron Technology, Inc. | Solid state lighting devices with current routing and associated methods of manufacturing |
| CN101997070A (en) * | 2010-09-10 | 2011-03-30 | 北京工业大学 | High-reflection low-voltage inverted light-emitting diode and preparation method thereof |
| JP2012253304A (en) * | 2011-06-07 | 2012-12-20 | Toshiba Corp | Method of manufacturing nitride semiconductor light-emitting element |
| JP2013026451A (en) | 2011-07-21 | 2013-02-04 | Stanley Electric Co Ltd | Semiconductor light-emitting device |
| KR102107863B1 (en) * | 2011-11-07 | 2020-05-08 | 루미리즈 홀딩 비.브이. | Improved p-contact with more uniform injection and lower optical loss |
| KR101220419B1 (en) * | 2012-04-27 | 2013-01-21 | 한국광기술원 | Vertical light emitting diode |
| JP6185786B2 (en) * | 2012-11-29 | 2017-08-23 | スタンレー電気株式会社 | Light emitting element |
| JP6190591B2 (en) * | 2013-01-15 | 2017-08-30 | スタンレー電気株式会社 | Semiconductor light emitting device |
| CN103456864B (en) * | 2013-08-29 | 2016-01-27 | 刘晶 | A kind of manufacture method of light-emitting diode chip for backlight unit, chip and light-emitting diode |
| CN110993756B (en) * | 2019-12-18 | 2022-12-06 | 东莞市中晶半导体科技有限公司 | LED chip and manufacturing method thereof |
| WO2024043316A1 (en) * | 2022-08-25 | 2024-02-29 | 国立大学法人京都大学 | Two-dimensional photonic crystal laser |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10200163A (en) * | 1997-01-10 | 1998-07-31 | Sanken Electric Co Ltd | Semiconductor light emitting element |
| JP2001244503A (en) * | 1999-12-21 | 2001-09-07 | Nichia Chem Ind Ltd | Nitride semiconductor light emitting device |
| JP2004172217A (en) * | 2002-11-18 | 2004-06-17 | Matsushita Electric Works Ltd | Semiconductor light emitting element |
| JP2005123526A (en) * | 2003-10-20 | 2005-05-12 | Oki Data Corp | Semiconductor device, led head, and image forming device |
| US20050184300A1 (en) * | 2004-02-25 | 2005-08-25 | Mikio Tazima | Light-emitting semiconductor device and method of fabrication |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57149781A (en) * | 1981-03-11 | 1982-09-16 | Fujitsu Ltd | Semiconductor luminous device |
| JPS58140171A (en) * | 1982-02-15 | 1983-08-19 | Nec Corp | Light-emitting diode |
| JP2792781B2 (en) * | 1992-03-03 | 1998-09-03 | シャープ株式会社 | Light emitting diode and method of manufacturing the same |
| JPH0697498A (en) * | 1992-09-17 | 1994-04-08 | Toshiba Corp | Semiconductor light emitting element |
| JPH07254731A (en) * | 1994-03-15 | 1995-10-03 | Hitachi Cable Ltd | Light emitting element |
| JPH07273368A (en) * | 1994-03-29 | 1995-10-20 | Nec Kansai Ltd | Light-emitting diode |
| JP3511213B2 (en) * | 1994-03-30 | 2004-03-29 | スタンレー電気株式会社 | Optical semiconductor device |
| JPH08335717A (en) * | 1995-06-06 | 1996-12-17 | Rohm Co Ltd | Semiconductor light emitting element |
| JP3595097B2 (en) * | 1996-02-26 | 2004-12-02 | 株式会社東芝 | Semiconductor device |
| JP3239061B2 (en) * | 1996-02-29 | 2001-12-17 | シャープ株式会社 | Light emitting diode and method of manufacturing the same |
| US6492661B1 (en) * | 1999-11-04 | 2002-12-10 | Fen-Ren Chien | Light emitting semiconductor device having reflection layer structure |
| CN100334745C (en) * | 1999-11-05 | 2007-08-29 | 洲磊科技股份有限公司 | Light emitting semiconductor device and its manufacture |
| JP4159865B2 (en) * | 2002-12-11 | 2008-10-01 | シャープ株式会社 | Nitride compound semiconductor light emitting device manufacturing method |
| KR100452751B1 (en) * | 2003-06-03 | 2004-10-15 | 삼성전기주식회사 | III-Nitride compound semiconductor light emitting device with mesh type electrode |
| JP2005116794A (en) * | 2003-10-08 | 2005-04-28 | Mitsubishi Cable Ind Ltd | Nitride semiconductor light emitting element |
| KR20050051920A (en) * | 2003-11-28 | 2005-06-02 | 삼성전자주식회사 | Flip-chip type light emitting device and method of manufacturing the same |
| CN1641893A (en) * | 2004-01-02 | 2005-07-20 | 炬鑫科技股份有限公司 | Gallium nitride series light-emitting diode structure and its manufacturing method |
-
2005
- 2005-09-30 CN CNB2005100303217A patent/CN100388515C/en active Active
-
2006
- 2006-09-29 JP JP2008532572A patent/JP2009510730A/en active Pending
- 2006-09-29 EP EP06791170.1A patent/EP1929545A4/en not_active Withdrawn
- 2006-09-29 KR KR1020087005001A patent/KR20080049724A/en not_active Application Discontinuation
- 2006-09-29 WO PCT/CN2006/002584 patent/WO2007036164A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10200163A (en) * | 1997-01-10 | 1998-07-31 | Sanken Electric Co Ltd | Semiconductor light emitting element |
| JP2001244503A (en) * | 1999-12-21 | 2001-09-07 | Nichia Chem Ind Ltd | Nitride semiconductor light emitting device |
| JP2004172217A (en) * | 2002-11-18 | 2004-06-17 | Matsushita Electric Works Ltd | Semiconductor light emitting element |
| JP2005123526A (en) * | 2003-10-20 | 2005-05-12 | Oki Data Corp | Semiconductor device, led head, and image forming device |
| US20050184300A1 (en) * | 2004-02-25 | 2005-08-25 | Mikio Tazima | Light-emitting semiconductor device and method of fabrication |
Non-Patent Citations (1)
| Title |
|---|
| See also references of WO2007036164A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007036164A8 (en) | 2007-07-19 |
| JP2009510730A (en) | 2009-03-12 |
| EP1929545A1 (en) | 2008-06-11 |
| CN1770486A (en) | 2006-05-10 |
| WO2007036164A1 (en) | 2007-04-05 |
| CN100388515C (en) | 2008-05-14 |
| KR20080049724A (en) | 2008-06-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| 17P | Request for examination filed |
Effective date: 20080314 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR |
|
| DAX | Request for extension of the european patent (deleted) | ||
| A4 | Supplementary search report drawn up and despatched |
Effective date: 20140205 |
|
| RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 33/14 20100101ALI20140130BHEP Ipc: H01L 33/00 20100101AFI20140130BHEP Ipc: H01L 33/38 20100101ALN20140130BHEP |
|
| RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 33/00 20100101AFI20140130BHEP Ipc: H01L 33/38 20100101ALN20140130BHEP Ipc: H01L 33/14 20100101ALI20140130BHEP |
|
| 17Q | First examination report despatched |
Effective date: 20190125 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
| 18D | Application deemed to be withdrawn |
Effective date: 20190605 |