TWI348229B - Packaging structure of chemical compound semiconductor device and fabricating method thereof - Google Patents

Packaging structure of chemical compound semiconductor device and fabricating method thereof

Info

Publication number
TWI348229B
TWI348229B TW096126300A TW96126300A TWI348229B TW I348229 B TWI348229 B TW I348229B TW 096126300 A TW096126300 A TW 096126300A TW 96126300 A TW96126300 A TW 96126300A TW I348229 B TWI348229 B TW I348229B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
compound semiconductor
chemical compound
packaging structure
fabricating method
Prior art date
Application number
TW096126300A
Other languages
English (en)
Chinese (zh)
Other versions
TW200905907A (en
Inventor
Pin Chuan Chen
Edison Chang
Shen Bo Lin
Lung Hsin Chen
Wen Liang Tseng
Original Assignee
Advanced Optoelectronic Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Optoelectronic Tech filed Critical Advanced Optoelectronic Tech
Priority to TW096126300A priority Critical patent/TWI348229B/zh
Priority to US12/173,763 priority patent/US20090022198A1/en
Priority to JP2008185794A priority patent/JP2009027166A/ja
Publication of TW200905907A publication Critical patent/TW200905907A/zh
Application granted granted Critical
Publication of TWI348229B publication Critical patent/TWI348229B/zh
Priority to JP2011263461A priority patent/JP2012074724A/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
TW096126300A 2007-07-19 2007-07-19 Packaging structure of chemical compound semiconductor device and fabricating method thereof TWI348229B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW096126300A TWI348229B (en) 2007-07-19 2007-07-19 Packaging structure of chemical compound semiconductor device and fabricating method thereof
US12/173,763 US20090022198A1 (en) 2007-07-19 2008-07-15 Package structure of compound semiconductor device and fabricating method thereof
JP2008185794A JP2009027166A (ja) 2007-07-19 2008-07-17 化合物半導体デバイスのパッケージ封入構造及びその作成方法
JP2011263461A JP2012074724A (ja) 2007-07-19 2011-12-01 薄膜基板、薄膜基板を備えた化合物半導体デバイスのパッケージ封入構造及びその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096126300A TWI348229B (en) 2007-07-19 2007-07-19 Packaging structure of chemical compound semiconductor device and fabricating method thereof

Publications (2)

Publication Number Publication Date
TW200905907A TW200905907A (en) 2009-02-01
TWI348229B true TWI348229B (en) 2011-09-01

Family

ID=40264812

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096126300A TWI348229B (en) 2007-07-19 2007-07-19 Packaging structure of chemical compound semiconductor device and fabricating method thereof

Country Status (3)

Country Link
US (1) US20090022198A1 (https=)
JP (2) JP2009027166A (https=)
TW (1) TWI348229B (https=)

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Publication number Priority date Publication date Assignee Title
SG106050A1 (en) * 2000-03-13 2004-09-30 Megic Corp Method of manufacture and identification of semiconductor chip marked for identification with internal marking indicia and protection thereof by non-black layer and device produced thereby
JP5440010B2 (ja) 2008-09-09 2014-03-12 日亜化学工業株式会社 光半導体装置及びその製造方法
TWI420695B (zh) * 2008-10-21 2013-12-21 榮創能源科技股份有限公司 化合物半導體元件之封裝模組結構及其製造方法
JP5482293B2 (ja) * 2009-03-05 2014-05-07 日亜化学工業株式会社 光半導体装置及びその製造方法
JP5359662B2 (ja) * 2009-08-03 2013-12-04 日亜化学工業株式会社 発光装置及びその製造方法
JP5493549B2 (ja) * 2009-07-30 2014-05-14 日亜化学工業株式会社 発光装置及びその製造方法
JP2011060801A (ja) * 2009-09-07 2011-03-24 Nichia Corp 発光装置及びその製造方法
WO2011150597A1 (zh) 2010-06-04 2011-12-08 佛山市国星光电股份有限公司 表面贴装型功率led支架制造方法及其产品
JP4875185B2 (ja) 2010-06-07 2012-02-15 株式会社東芝 光半導体装置
CN102376844A (zh) 2010-08-16 2012-03-14 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法
TWI409976B (zh) * 2010-08-25 2013-09-21 Advanced Optoelectronic Tech 發光二極體封裝結構及其製造方法
TWI407536B (zh) * 2010-12-10 2013-09-01 國立成功大學 半導體元件之散熱座的製作方法
CN102931329B (zh) * 2011-08-08 2015-01-07 展晶科技(深圳)有限公司 发光二极管封装结构
RU2617880C2 (ru) 2012-02-10 2017-04-28 Конинклейке Филипс Н.В. Прессованная линза, формирующая led-модуль масштаба интегральной схемы, и способ ее изготовления
JP5995579B2 (ja) * 2012-07-24 2016-09-21 シチズンホールディングス株式会社 半導体発光装置及びその製造方法
KR20140094752A (ko) 2013-01-22 2014-07-31 삼성전자주식회사 전자소자 패키지 및 이에 사용되는 패키지 기판
JP5837006B2 (ja) * 2013-07-16 2015-12-24 株式会社東芝 光半導体装置の製造方法
JP6349904B2 (ja) * 2014-04-18 2018-07-04 日亜化学工業株式会社 半導体発光装置およびその製造方法
JP6432343B2 (ja) * 2014-12-26 2018-12-05 日亜化学工業株式会社 発光装置の製造方法
FR3063090B1 (fr) * 2017-02-17 2022-04-01 Commissariat Energie Atomique Systeme de passage pour pietons
JP7053249B2 (ja) * 2017-12-22 2022-04-12 スタンレー電気株式会社 半導体発光装置
KR102340970B1 (ko) * 2019-12-13 2021-12-20 한국광기술원 라이다 장치 및 그의 동작방법
JP2022120339A (ja) * 2021-02-05 2022-08-18 スタンレー電気株式会社 基板構造体、発光装置及び基板構造体の製造方法

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JPS54156167A (en) * 1978-05-31 1979-12-08 Matsushita Electric Industrial Co Ltd Method of producing double side printed circuit board
EP0228694A3 (en) * 1985-12-30 1989-10-04 E.I. Du Pont De Nemours And Company Process using combination of laser etching and another etchant in formation of conductive through-holes in a dielectric layer
JPS63246894A (ja) * 1987-04-01 1988-10-13 シャープ株式会社 フレキシブルスル−ホ−ル基板の製造方法
JP2992165B2 (ja) * 1992-06-22 1999-12-20 松下電工株式会社 配線板の製造方法
JP3007833B2 (ja) * 1995-12-12 2000-02-07 富士通株式会社 半導体装置及びその製造方法及びリードフレーム及びその製造方法
JP3183643B2 (ja) * 1998-06-17 2001-07-09 株式会社カツラヤマテクノロジー 凹みプリント配線板の製造方法
JP3945037B2 (ja) * 1998-09-04 2007-07-18 松下電器産業株式会社 光電変換素子及びその製造方法
JP5092191B2 (ja) * 2001-09-26 2012-12-05 イビデン株式会社 Ｉｃチップ実装用基板
JP4211256B2 (ja) * 2001-12-28 2009-01-21 セイコーエプソン株式会社 半導体集積回路、半導体集積回路の製造方法、電気光学装置、電子機器
JP2005079329A (ja) * 2003-08-29 2005-03-24 Stanley Electric Co Ltd 表面実装型発光ダイオード
JP4163228B2 (ja) * 2004-03-17 2008-10-08 ジャパンゴアテックス株式会社 発光体用回路基板の製造方法、発光体用回路基板前駆体および発光体用回路基板、並びに発光体
JP4609441B2 (ja) * 2007-02-23 2011-01-12 パナソニック電工株式会社 Ｌｅｄ表示装置の製造方法

Also Published As

Publication number Publication date
TW200905907A (en) 2009-02-01
JP2009027166A (ja) 2009-02-05
JP2012074724A (ja) 2012-04-12
US20090022198A1 (en) 2009-01-22

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