JP2009027166A - 化合物半導体デバイスのパッケージ封入構造及びその作成方法 - Google Patents

化合物半導体デバイスのパッケージ封入構造及びその作成方法 Download PDF

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Publication number
JP2009027166A
JP2009027166A JP2008185794A JP2008185794A JP2009027166A JP 2009027166 A JP2009027166 A JP 2009027166A JP 2008185794 A JP2008185794 A JP 2008185794A JP 2008185794 A JP2008185794 A JP 2008185794A JP 2009027166 A JP2009027166 A JP 2009027166A
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Japan
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conductive film
semiconductor device
compound semiconductor
package
encapsulating
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Pending
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JP2008185794A
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English (en)
Japanese (ja)
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JP2009027166A5 (https=
Inventor
Pin Chuan Chen
ピン チュアン チェン
Chao Hsiung Chang
チャオ シーウン チャン
Shen Bo Lin
シェン ボー リン
Lung Hsin Chen
ルン シン チェン
Wen Liang Tseng
ウェン リアン ツェン
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Advanced Optoelectronic Technology Inc
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Advanced Optoelectronic Technology Inc
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Publication of JP2009027166A publication Critical patent/JP2009027166A/ja
Publication of JP2009027166A5 publication Critical patent/JP2009027166A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Photovoltaic Devices (AREA)
JP2008185794A 2007-07-19 2008-07-17 化合物半導体デバイスのパッケージ封入構造及びその作成方法 Pending JP2009027166A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096126300A TWI348229B (en) 2007-07-19 2007-07-19 Packaging structure of chemical compound semiconductor device and fabricating method thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011263461A Division JP2012074724A (ja) 2007-07-19 2011-12-01 薄膜基板、薄膜基板を備えた化合物半導体デバイスのパッケージ封入構造及びその作製方法

Publications (2)

Publication Number Publication Date
JP2009027166A true JP2009027166A (ja) 2009-02-05
JP2009027166A5 JP2009027166A5 (https=) 2009-07-02

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JP2008185794A Pending JP2009027166A (ja) 2007-07-19 2008-07-17 化合物半導体デバイスのパッケージ封入構造及びその作成方法
JP2011263461A Pending JP2012074724A (ja) 2007-07-19 2011-12-01 薄膜基板、薄膜基板を備えた化合物半導体デバイスのパッケージ封入構造及びその作製方法

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JP2011263461A Pending JP2012074724A (ja) 2007-07-19 2011-12-01 薄膜基板、薄膜基板を備えた化合物半導体デバイスのパッケージ封入構造及びその作製方法

Country Status (3)

Country Link
US (1) US20090022198A1 (https=)
JP (2) JP2009027166A (https=)
TW (1) TWI348229B (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010232643A (ja) * 2009-03-05 2010-10-14 Nichia Corp 光半導体装置及びその製造方法
JP2011035187A (ja) * 2009-08-03 2011-02-17 Nichia Corp 発光装置及びその製造方法
JP2011035040A (ja) * 2009-07-30 2011-02-17 Nichia Corp 発光装置及びその製造方法
JP2012129485A (ja) * 2010-12-10 2012-07-05 National Cheng Kung Univ 半導体素子の放熱体の製造方法
JP2013239730A (ja) * 2013-07-16 2013-11-28 Toshiba Corp 光半導体装置
US8981412B2 (en) 2010-06-07 2015-03-17 Kabushiki Kaisha Toshiba Optical semiconductor device and method for manufacturing same
US9627593B2 (en) 2014-12-26 2017-04-18 Nichia Corporation Manufacturing method of light-emitting device
JP2019114638A (ja) * 2017-12-22 2019-07-11 スタンレー電気株式会社 樹脂パッケージ及び半導体発光装置
JP2020509266A (ja) * 2017-02-17 2020-03-26 コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ 発光シグナリングスラブ及びそのようなスラブを使用可能なシステム
KR20210075784A (ko) * 2019-12-13 2021-06-23 한국광기술원 라이다 장치 및 그의 동작방법
JP2022120339A (ja) * 2021-02-05 2022-08-18 スタンレー電気株式会社 基板構造体、発光装置及び基板構造体の製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG106050A1 (en) * 2000-03-13 2004-09-30 Megic Corp Method of manufacture and identification of semiconductor chip marked for identification with internal marking indicia and protection thereof by non-black layer and device produced thereby
JP5440010B2 (ja) 2008-09-09 2014-03-12 日亜化学工業株式会社 光半導体装置及びその製造方法
TWI420695B (zh) * 2008-10-21 2013-12-21 榮創能源科技股份有限公司 化合物半導體元件之封裝模組結構及其製造方法
JP2011060801A (ja) * 2009-09-07 2011-03-24 Nichia Corp 発光装置及びその製造方法
WO2011150597A1 (zh) 2010-06-04 2011-12-08 佛山市国星光电股份有限公司 表面贴装型功率led支架制造方法及其产品
CN102376844A (zh) 2010-08-16 2012-03-14 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法
TWI409976B (zh) * 2010-08-25 2013-09-21 Advanced Optoelectronic Tech 發光二極體封裝結構及其製造方法
CN102931329B (zh) * 2011-08-08 2015-01-07 展晶科技(深圳)有限公司 发光二极管封装结构
RU2617880C2 (ru) 2012-02-10 2017-04-28 Конинклейке Филипс Н.В. Прессованная линза, формирующая led-модуль масштаба интегральной схемы, и способ ее изготовления
JP5995579B2 (ja) * 2012-07-24 2016-09-21 シチズンホールディングス株式会社 半導体発光装置及びその製造方法
KR20140094752A (ko) 2013-01-22 2014-07-31 삼성전자주식회사 전자소자 패키지 및 이에 사용되는 패키지 기판
JP6349904B2 (ja) * 2014-04-18 2018-07-04 日亜化学工業株式会社 半導体発光装置およびその製造方法

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JPH09162348A (ja) * 1995-12-12 1997-06-20 Fujitsu Ltd 半導体装置及びその製造方法及びリードフレーム及びその製造方法
JP2000077822A (ja) * 1998-06-17 2000-03-14 Katsurayama Technol:Kk 凹みプリント配線板およびその製造方法、ならびに電子部品
JP2000082847A (ja) * 1998-09-04 2000-03-21 Matsushita Electronics Industry Corp 光電変換素子及びその製造方法
JP2003101080A (ja) * 2001-09-26 2003-04-04 Ibiden Co Ltd Ｉｃチップ実装用基板
JP2005079329A (ja) * 2003-08-29 2005-03-24 Stanley Electric Co Ltd 表面実装型発光ダイオード
JP2007129273A (ja) * 2007-02-23 2007-05-24 Matsushita Electric Works Ltd Ｌｅｄ表示装置の製造方法

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JPS54156167A (en) * 1978-05-31 1979-12-08 Matsushita Electric Industrial Co Ltd Method of producing double side printed circuit board
EP0228694A3 (en) * 1985-12-30 1989-10-04 E.I. Du Pont De Nemours And Company Process using combination of laser etching and another etchant in formation of conductive through-holes in a dielectric layer
JPS63246894A (ja) * 1987-04-01 1988-10-13 シャープ株式会社 フレキシブルスル−ホ−ル基板の製造方法
JP2992165B2 (ja) * 1992-06-22 1999-12-20 松下電工株式会社 配線板の製造方法
JP4211256B2 (ja) * 2001-12-28 2009-01-21 セイコーエプソン株式会社 半導体集積回路、半導体集積回路の製造方法、電気光学装置、電子機器
JP4163228B2 (ja) * 2004-03-17 2008-10-08 ジャパンゴアテックス株式会社 発光体用回路基板の製造方法、発光体用回路基板前駆体および発光体用回路基板、並びに発光体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162348A (ja) * 1995-12-12 1997-06-20 Fujitsu Ltd 半導体装置及びその製造方法及びリードフレーム及びその製造方法
JP2000077822A (ja) * 1998-06-17 2000-03-14 Katsurayama Technol:Kk 凹みプリント配線板およびその製造方法、ならびに電子部品
JP2000082847A (ja) * 1998-09-04 2000-03-21 Matsushita Electronics Industry Corp 光電変換素子及びその製造方法
JP2003101080A (ja) * 2001-09-26 2003-04-04 Ibiden Co Ltd Ｉｃチップ実装用基板
JP2005079329A (ja) * 2003-08-29 2005-03-24 Stanley Electric Co Ltd 表面実装型発光ダイオード
JP2007129273A (ja) * 2007-02-23 2007-05-24 Matsushita Electric Works Ltd Ｌｅｄ表示装置の製造方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010232643A (ja) * 2009-03-05 2010-10-14 Nichia Corp 光半導体装置及びその製造方法
JP2011035040A (ja) * 2009-07-30 2011-02-17 Nichia Corp 発光装置及びその製造方法
JP2011035187A (ja) * 2009-08-03 2011-02-17 Nichia Corp 発光装置及びその製造方法
US8981412B2 (en) 2010-06-07 2015-03-17 Kabushiki Kaisha Toshiba Optical semiconductor device and method for manufacturing same
JP2012129485A (ja) * 2010-12-10 2012-07-05 National Cheng Kung Univ 半導体素子の放熱体の製造方法
JP2013239730A (ja) * 2013-07-16 2013-11-28 Toshiba Corp 光半導体装置
US9627593B2 (en) 2014-12-26 2017-04-18 Nichia Corporation Manufacturing method of light-emitting device
JP2020509266A (ja) * 2017-02-17 2020-03-26 コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ 発光シグナリングスラブ及びそのようなスラブを使用可能なシステム
JP2023126787A (ja) * 2017-02-17 2023-09-12 コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ 発光シグナリングスラブ及びそのようなスラブを使用可能なシステム
JP7493081B2 (ja) 2017-02-17 2024-05-30 コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ 発光シグナリングスラブ及びそのようなスラブを使用可能なシステム
JP2019114638A (ja) * 2017-12-22 2019-07-11 スタンレー電気株式会社 樹脂パッケージ及び半導体発光装置
JP7053249B2 (ja) 2017-12-22 2022-04-12 スタンレー電気株式会社 半導体発光装置
KR20210075784A (ko) * 2019-12-13 2021-06-23 한국광기술원 라이다 장치 및 그의 동작방법
KR102340970B1 (ko) * 2019-12-13 2021-12-20 한국광기술원 라이다 장치 및 그의 동작방법
JP2022120339A (ja) * 2021-02-05 2022-08-18 スタンレー電気株式会社 基板構造体、発光装置及び基板構造体の製造方法
US12355012B2 (en) 2021-02-05 2025-07-08 Stanley Electric Co., Ltd. Ceramic-insulated multi-metal substrate structure with integrated coating film for high-performance light-emitting devices

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JP2012074724A (ja) 2012-04-12
US20090022198A1 (en) 2009-01-22
TWI348229B (en) 2011-09-01

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