JP2012129485A - 半導体素子の放熱体の製造方法 - Google Patents
半導体素子の放熱体の製造方法 Download PDFInfo
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Abstract
【解決手段】少なくとも仮基板100の表面を覆うように導電層104を形成するステップと、少なくとも一つの金属バンプを介して、一つの半導体チップ130を前記導電層に接合するステップと、前記半導体チップと前記導電層の間の隙間を充満するように金属基板140を前記導電層上に形成するステップと、前記仮基板を除去するステップと、を含む半導体素子の放熱体の製造方法である。
【選択図】図8
Description
102:表面
104:導電層
106:金属バンプ
108:金属バンプ
108a:バンプ
108b:バンプ
110:金属バンプ
110a:バンプ
110b:バンプ
112:金属バンプ
114:金属バンプ
116:金属バンプ
116a:バンプ
116b:バンプ
116c:バンプ
118:半導体チップ
120:基板
122:発光エピタキシャル構造
124:金属接着層
126:第1電極
128:第2電極
130:半導体チップ
132:基板
134:発光エピタキシャル構造
136:第1電極
138:第2電極
140:金属基板
142:反射層
144:透明保護層
Claims (12)
- 半導体素子の放熱体の製造方法であって、少なくとも
仮基板の表面を覆うように導電層を形成するステップと、
少なくとも一つの金属バンプを介して、一つの半導体チップを前記導電層に接合するステップと、
前記半導体チップと前記導電層の間の隙間を充満するように金属基板を前記導電層上に形成するステップと、
前記仮基板を除去するステップと
を含む半導体素子の放熱体の製造方法。 - 前記半導体チップは半導体光電素子であり、
前記金属基板を前記導電層上に形成するステップと前記仮基板を除去するステップの間に、さらに、
前記金属基板上に反射層を形成するステップと、
前記反射層上に透明保護層を形成するステップと
を含む請求項1に記載の半導体素子の放熱体の製造方法。 - 前記反射層を形成するステップにおいて、電気メッキまたは無電メッキが用いられる請求項2に記載の半導体素子の放熱体の製造方法。
- 前記導電層は、金、アルミ、銀、プラチナを含む金属層、またはITOを含む透明導電層を含む請求項1から3の何れか1項に記載の半導体素子の放熱体の製造方法。
- 前記半導体チップの底部に金属接着層が設けられる請求項1から4の何れか1項に記載の半導体素子の放熱体の製造方法。
- 前記少なくとも一つの金属バンプを介して、一つの半導体チップを前記導電層に接合するステップにおいて、超音波熱圧着が用いられる請求項1から5の何れか1項に記載の半導体素子の放熱体の製造方法。
- 前記少なくとも一つの金属バンプを介して、一つの半導体チップを前記導電層に接合するステップにおいて、超音波をかけながら押圧をかけて行われる請求項1から5の何れか1項に記載の半導体素子の放熱体の製造方法。
- 前記少なくとも一つの金属バンプを介して、一つの半導体チップを前記導電層に接合するステップにおいて、熱圧着が用いられる請求項1から5の何れか1項に記載の半導体素子の放熱体の製造方法。
- 前記少なくとも一つの金属バンプを介して、一つの半導体チップを前記導電層に接合するステップは、
前記金属バンプと前記半導体チップを接合するステップと、
前記金属バンプと前記半導体チップを接合してから、前記金属バンプを前記導電層上に接合するステップと
を含む請求項1から8の何れか1項に記載の半導体素子の放熱体の製造方法。 - 前記少なくとも一つの金属バンプを介して、一つの半導体チップを前記導電層に接合するステップは、
前記金属バンプを前記導電層上に接合するステップと、
前記金属バンプを前記導電層上に接合してから、前記半導体チップを前記金属バンプ上に接合するステップと
を含む請求項1から8の何れか1項に記載の半導体素子の放熱体の製造方法。 - 前記金属バンプは第1バンプと第2バンプとを含み、
前記少なくとも一つの金属バンプを介して、一つの半導体チップを前記導電層に接合するステップは、
前記第1バンプと前記第2バンプをそれぞれ前記半導体チップと前記導電層に接合するステップと、
前記第1バンプと前記第2バンプをそれぞれ前記半導体チップと前記導電層に接合すてから、前記第1バンプと前記第2バンプを接合するステップと
を含む請求項1から8の何れか1項に記載の半導体素子の放熱体の製造方法。 - 前記金属基板を前記導電層上に形成するステップにおいて、電気メッキまたは無電メッキが用いられる請求項1から11の何れか1項に記載の半導体素子の放熱体の製造方法。
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TW099143290A TWI407536B (zh) | 2010-12-10 | 2010-12-10 | 半導體元件之散熱座的製作方法 |
TW099143290 | 2010-12-10 |
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JP (1) | JP5134108B2 (ja) |
KR (1) | KR101148028B1 (ja) |
CN (1) | CN102569100A (ja) |
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DE102013112886A1 (de) * | 2013-11-21 | 2015-05-21 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
DE102015002176A1 (de) * | 2015-02-24 | 2016-08-25 | Jenoptik Laser Gmbh | Verfahren zum Herstellen eines Diodenlasers und Diodenlaser |
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JP2008010808A (ja) * | 2006-06-26 | 2008-01-17 | National Cheng Kung Univ | ヒートシンク装置及びその製造方法 |
JP2009027166A (ja) * | 2007-07-19 | 2009-02-05 | Advanced Optoelectronic Technology Inc | 化合物半導体デバイスのパッケージ封入構造及びその作成方法 |
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JP5134108B2 (ja) | 2013-01-30 |
DE102011011718B3 (de) | 2012-02-02 |
US20120149138A1 (en) | 2012-06-14 |
TW201225227A (en) | 2012-06-16 |
TWI407536B (zh) | 2013-09-01 |
KR101148028B1 (ko) | 2012-05-25 |
US8232119B2 (en) | 2012-07-31 |
CN102569100A (zh) | 2012-07-11 |
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