TWI346982B - Advanced low dielectric constant organosilicon plasma chemical vapor deposition films - Google Patents

Advanced low dielectric constant organosilicon plasma chemical vapor deposition films

Info

Publication number
TWI346982B
TWI346982B TW095104778A TW95104778A TWI346982B TW I346982 B TWI346982 B TW I346982B TW 095104778 A TW095104778 A TW 095104778A TW 95104778 A TW95104778 A TW 95104778A TW I346982 B TWI346982 B TW I346982B
Authority
TW
Taiwan
Prior art keywords
vapor deposition
dielectric constant
chemical vapor
low dielectric
plasma chemical
Prior art date
Application number
TW095104778A
Other languages
English (en)
Chinese (zh)
Other versions
TW200633060A (en
Inventor
Son V Nguyen
Sarah L Lane
Jia Lee
Kensaku Ida
Takeshi Nogami
Darryl D Restaino
Original Assignee
Ibm
Sony Corp
Sony Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Sony Corp, Sony Electronics Inc filed Critical Ibm
Publication of TW200633060A publication Critical patent/TW200633060A/zh
Application granted granted Critical
Publication of TWI346982B publication Critical patent/TWI346982B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6539—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
TW095104778A 2005-02-16 2006-02-13 Advanced low dielectric constant organosilicon plasma chemical vapor deposition films TWI346982B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/906,370 US7202564B2 (en) 2005-02-16 2005-02-16 Advanced low dielectric constant organosilicon plasma chemical vapor deposition films

Publications (2)

Publication Number Publication Date
TW200633060A TW200633060A (en) 2006-09-16
TWI346982B true TWI346982B (en) 2011-08-11

Family

ID=36816220

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095104778A TWI346982B (en) 2005-02-16 2006-02-13 Advanced low dielectric constant organosilicon plasma chemical vapor deposition films

Country Status (7)

Country Link
US (2) US7202564B2 (https=)
EP (1) EP1849183A4 (https=)
JP (1) JP5466365B2 (https=)
KR (1) KR100998809B1 (https=)
CN (1) CN100533681C (https=)
TW (1) TWI346982B (https=)
WO (1) WO2006088881A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI684654B (zh) * 2015-04-28 2020-02-11 日商三井金屬鑛業股份有限公司 表面處理銅箔及其製造方法、印刷配線板用覆銅層合板、以及印刷配線板

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7288292B2 (en) * 2003-03-18 2007-10-30 International Business Machines Corporation Ultra low k (ULK) SiCOH film and method
US7622400B1 (en) 2004-05-18 2009-11-24 Novellus Systems, Inc. Method for improving mechanical properties of low dielectric constant materials
US7202564B2 (en) * 2005-02-16 2007-04-10 International Business Machines Corporation Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
US7622378B2 (en) 2005-11-09 2009-11-24 Tokyo Electron Limited Multi-step system and method for curing a dielectric film
US8956457B2 (en) * 2006-09-08 2015-02-17 Tokyo Electron Limited Thermal processing system for curing dielectric films
US7670924B2 (en) * 2007-01-29 2010-03-02 Applied Materials, Inc. Air gap integration scheme
US7615482B2 (en) * 2007-03-23 2009-11-10 International Business Machines Corporation Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength
JP5165914B2 (ja) * 2007-03-30 2013-03-21 三井化学株式会社 多孔質シリカフィルム及びその製造方法
US20090075491A1 (en) * 2007-09-13 2009-03-19 Tokyo Electron Limited Method for curing a dielectric film
US7977256B2 (en) 2008-03-06 2011-07-12 Tokyo Electron Limited Method for removing a pore-generating material from an uncured low-k dielectric film
US20090226694A1 (en) * 2008-03-06 2009-09-10 Tokyo Electron Limited POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING
US7858533B2 (en) * 2008-03-06 2010-12-28 Tokyo Electron Limited Method for curing a porous low dielectric constant dielectric film
US20090226695A1 (en) * 2008-03-06 2009-09-10 Tokyo Electron Limited Method for treating a dielectric film with infrared radiation
US8298965B2 (en) * 2008-09-03 2012-10-30 American Air Liquide, Inc. Volatile precursors for deposition of C-linked SiCOH dielectrics
US8895942B2 (en) * 2008-09-16 2014-11-25 Tokyo Electron Limited Dielectric treatment module using scanning IR radiation source
US20100065758A1 (en) * 2008-09-16 2010-03-18 Tokyo Electron Limited Dielectric material treatment system and method of operating
US8557712B1 (en) * 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
PT2251454E (pt) 2009-05-13 2014-10-01 Sio2 Medical Products Inc Revestimento e inspeção de vaso
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
WO2011043337A1 (ja) * 2009-10-05 2011-04-14 国立大学法人東北大学 低誘電率絶縁膜およびその形成方法
JP5164079B2 (ja) * 2009-10-21 2013-03-13 国立大学法人東北大学 低誘電率絶縁膜の形成方法
JP5164078B2 (ja) * 2009-10-05 2013-03-13 国立大学法人東北大学 低誘電率絶縁膜
JP5692085B2 (ja) * 2009-11-11 2015-04-01 日本電気株式会社 抵抗変化素子、半導体装置、および抵抗変化素子の形成方法
US8247332B2 (en) 2009-12-04 2012-08-21 Novellus Systems, Inc. Hardmask materials
JP2013520030A (ja) 2010-02-17 2013-05-30 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ＳｉＣＯＨＬＯＷ−Ｋ膜の蒸着方法
US8349746B2 (en) * 2010-02-23 2013-01-08 Applied Materials, Inc. Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure
US8242460B2 (en) * 2010-03-29 2012-08-14 Tokyo Electron Limited Ultraviolet treatment apparatus
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
US8637412B2 (en) * 2011-08-19 2014-01-28 International Business Machines Corporation Process to form an adhesion layer and multiphase ultra-low k dielectric material using PECVD
CA2855353C (en) 2011-11-11 2021-01-19 Sio2 Medical Products, Inc. Passivation, ph protective or lubricity coating for pharmaceutical package, coating process and apparatus
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
JP5788350B2 (ja) 2012-03-23 2015-09-30 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
EP2846755A1 (en) 2012-05-09 2015-03-18 SiO2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US20150297800A1 (en) 2012-07-03 2015-10-22 Sio2 Medical Products, Inc. SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS
US9664626B2 (en) 2012-11-01 2017-05-30 Sio2 Medical Products, Inc. Coating inspection method
WO2014078666A1 (en) 2012-11-16 2014-05-22 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
AU2013352436B2 (en) 2012-11-30 2018-10-25 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition on medical syringes, cartridges, and the like
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
US9337068B2 (en) 2012-12-18 2016-05-10 Lam Research Corporation Oxygen-containing ceramic hard masks and associated wet-cleans
US9662450B2 (en) 2013-03-01 2017-05-30 Sio2 Medical Products, Inc. Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus
CN105392916B (zh) 2013-03-11 2019-03-08 Sio2医药产品公司 涂布包装材料
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
EP2971227B1 (en) 2013-03-15 2017-11-15 Si02 Medical Products, Inc. Coating method.
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US20150228788A1 (en) * 2014-02-13 2015-08-13 United Microelectronics Corp. Stress memorization process and semiconductor structure including contact etch stop layer
US9209017B2 (en) 2014-03-26 2015-12-08 International Business Machines Corporation Advanced ultra low k SiCOH dielectrics prepared by built-in engineered pore size and bonding structured with cyclic organosilicon precursors
WO2015148471A1 (en) 2014-03-28 2015-10-01 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
KR102786617B1 (ko) 2015-08-18 2025-03-26 에스아이오2 메디컬 프로덕츠, 엘엘씨 산소 전달률이 낮은, 의약품 및 다른 제품의 포장용기
US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
US9847221B1 (en) 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
KR102392815B1 (ko) 2017-08-02 2022-05-02 삼성전자주식회사 초저유전막의 제조 방법 및 이에 의해 제조된 초저유전막
US12087692B2 (en) * 2017-09-28 2024-09-10 Taiwan Semiconductor Manufacturing Co., Ltd. Hardened interlayer dielectric layer
CN109119339B (zh) * 2018-08-26 2022-02-08 合肥安德科铭半导体科技有限公司 一种低介电常数的SiCO间隔层材料及其制备方法和应用
CN111484618A (zh) * 2019-01-28 2020-08-04 海加控股有限公司 低温等离子电场辅助合成有机硅化合物的方法和装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260369A (ja) * 1996-03-25 1997-10-03 Toshiba Corp 絶縁膜の形成方法
US6147009A (en) * 1998-06-29 2000-11-14 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
AU2814000A (en) * 1999-02-26 2000-09-14 Trikon Holdings Limited A method of processing a polymer layer
US6312793B1 (en) * 1999-05-26 2001-11-06 International Business Machines Corporation Multiphase low dielectric constant material
US6841256B2 (en) * 1999-06-07 2005-01-11 Honeywell International Inc. Low dielectric constant polyorganosilicon materials generated from polycarbosilanes
JP3615979B2 (ja) * 2000-01-18 2005-02-02 株式会社ルネサステクノロジ 半導体装置及びその製造方法
WO2002043119A2 (en) * 2000-10-25 2002-05-30 International Business Machines Corporation An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same
US6790789B2 (en) * 2000-10-25 2004-09-14 International Business Machines Corporation Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
US6756323B2 (en) * 2001-01-25 2004-06-29 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device
US6441491B1 (en) * 2000-10-25 2002-08-27 International Business Machines Corporation Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same
US6768200B2 (en) * 2000-10-25 2004-07-27 International Business Machines Corporation Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device
US7074489B2 (en) * 2001-05-23 2006-07-11 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
US20030087043A1 (en) 2001-11-08 2003-05-08 International Business Machines Corporation Low k dielectric film deposition process
EP1504138A2 (en) * 2002-05-08 2005-02-09 Applied Materials, Inc. Method for using low dielectric constant film by electron beam
US7307343B2 (en) * 2002-05-30 2007-12-11 Air Products And Chemicals, Inc. Low dielectric materials and methods for making same
US6770570B2 (en) * 2002-11-15 2004-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a semiconductor device with a substantially uniform density low-k dielectric layer
US7250370B2 (en) * 2003-09-19 2007-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties
US20050140029A1 (en) * 2003-12-31 2005-06-30 Lih-Ping Li Heterogeneous low k dielectric
US7030468B2 (en) * 2004-01-16 2006-04-18 International Business Machines Corporation Low k and ultra low k SiCOH dielectric films and methods to form the same
US7009280B2 (en) * 2004-04-28 2006-03-07 International Business Machines Corporation Low-k interlevel dielectric layer (ILD)
US7223691B2 (en) * 2004-10-14 2007-05-29 International Business Machines Corporation Method of forming low resistance and reliable via in inter-level dielectric interconnect
US7357977B2 (en) * 2005-01-13 2008-04-15 International Business Machines Corporation Ultralow dielectric constant layer with controlled biaxial stress
US7202564B2 (en) * 2005-02-16 2007-04-10 International Business Machines Corporation Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
US7253105B2 (en) * 2005-02-22 2007-08-07 International Business Machines Corporation Reliable BEOL integration process with direct CMP of porous SiCOH dielectric

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI684654B (zh) * 2015-04-28 2020-02-11 日商三井金屬鑛業股份有限公司 表面處理銅箔及其製造方法、印刷配線板用覆銅層合板、以及印刷配線板

Also Published As

Publication number Publication date
CN101124664A (zh) 2008-02-13
EP1849183A4 (en) 2010-09-01
KR20070104591A (ko) 2007-10-26
CN100533681C (zh) 2009-08-26
EP1849183A2 (en) 2007-10-31
JP2008530821A (ja) 2008-08-07
KR100998809B1 (ko) 2010-12-06
WO2006088881A3 (en) 2007-01-18
US7494938B2 (en) 2009-02-24
WO2006088881A2 (en) 2006-08-24
US7202564B2 (en) 2007-04-10
US20060183345A1 (en) 2006-08-17
JP5466365B2 (ja) 2014-04-09
TW200633060A (en) 2006-09-16
US20070128882A1 (en) 2007-06-07

Similar Documents

Publication Publication Date Title
TWI346982B (en) Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
TWI341009B (en) Chemical vapor deposition
TWI369413B (en) Cyclic chemical vapor deposition of metal-silicon containing films
EP2274961A4 (en) PLASMA-ASSISTED STEAM PHASE CHEMICAL DEPOSITION OF BARRIER COATINGS
GB2458776B (en) Chemical vapour deposition process
GB0523339D0 (en) Chemical vapour deposition and precursors therefor
TWI371502B (en) Method and apparatus for plasma enhanced chemical vapor deposition
GB2437693B (en) Chemical vapor deposition reactor having multiple inlets
GB2419896B (en) Chemical vapor deposition reactor
IL181394A0 (en) Atmospheric pressure chemical vapor deposition
TWI346716B (en) Chemical vapor deposition device
IL217795A0 (en) Chemical vapor deposited silicon carbide articles
WO2011006035A3 (en) Bis-ketoiminate copper precursors for deposition of copper-containing films
EP1599488A4 (en) CHEMICAL VAPOR DEPOSITS FOR THE DEPOSITION OF TANTALUM-BOUND MATERIALS
EP1852522A4 (en) FILM REMOVED BY VAPOR EVAPORATION BY A PLASMA-ASSISTED STEAM CHEMICAL DEPOSITION PROCESS
TWI350006B (en) Plasma enhanced thin film deposition method
GB2467671B (en) Plasma deposition apparatus
GB2432590B (en) Chemical vapour deposition apparatus
TWI365921B (en) Chemical vapor deposition apparatus
GB0502446D0 (en) Improved precursors for chemical vapour deposition
GB0306027D0 (en) Precursors for chemical vapour deposition
GB0603745D0 (en) Plasma chemical vapour deposition apparatus
GB0325752D0 (en) Precursors for chemical vapour deposition
GB0321409D0 (en) Precursors for chemical vapour deposition
GB0512392D0 (en) Precursors for chemical vapour depositions

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent