TWI346253B - Antireflection film composition, patterning process and substrate using the same - Google Patents

Antireflection film composition, patterning process and substrate using the same

Info

Publication number
TWI346253B
TWI346253B TW095146913A TW95146913A TWI346253B TW I346253 B TWI346253 B TW I346253B TW 095146913 A TW095146913 A TW 095146913A TW 95146913 A TW95146913 A TW 95146913A TW I346253 B TWI346253 B TW I346253B
Authority
TW
Taiwan
Prior art keywords
substrate
same
antireflection film
patterning process
film composition
Prior art date
Application number
TW095146913A
Other languages
English (en)
Other versions
TW200736839A (en
Inventor
Motoaki Iwabuchi
Tsutomu Ogihara
Takeshi Asano
Takafumi Ueda
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200736839A publication Critical patent/TW200736839A/zh
Application granted granted Critical
Publication of TWI346253B publication Critical patent/TWI346253B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW095146913A 2005-12-14 2006-12-14 Antireflection film composition, patterning process and substrate using the same TWI346253B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005360202A JP4553835B2 (ja) 2005-12-14 2005-12-14 反射防止膜材料、及びこれを用いたパターン形成方法、基板

Publications (2)

Publication Number Publication Date
TW200736839A TW200736839A (en) 2007-10-01
TWI346253B true TWI346253B (en) 2011-08-01

Family

ID=37897314

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095146913A TWI346253B (en) 2005-12-14 2006-12-14 Antireflection film composition, patterning process and substrate using the same

Country Status (6)

Country Link
US (1) US20070134916A1 (zh)
EP (1) EP1798599B1 (zh)
JP (1) JP4553835B2 (zh)
KR (1) KR101319233B1 (zh)
DE (1) DE602006002095D1 (zh)
TW (1) TWI346253B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10195816B2 (en) 2014-12-01 2019-02-05 Industrial Technology Research Institute Metal/polymer composite material and method for fabricating the same
US10463500B2 (en) 2014-11-07 2019-11-05 Industrial Technology Research Institute Medical composite material, method for fabricating the same and applications thereof

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JP5653880B2 (ja) 2011-10-11 2015-01-14 信越化学工業株式会社 レジスト下層膜形成材料及びパターン形成方法
JP5882776B2 (ja) 2012-02-14 2016-03-09 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
JP5739360B2 (ja) * 2012-02-14 2015-06-24 信越化学工業株式会社 ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法
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JP5794243B2 (ja) 2013-02-18 2015-10-14 信越化学工業株式会社 パターン形成方法
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TWI592760B (zh) * 2014-12-30 2017-07-21 羅門哈斯電子材料韓國有限公司 與經外塗佈之光致抗蝕劑一起使用之塗層組合物
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TWI755564B (zh) 2017-09-06 2022-02-21 德商馬克專利公司 含有旋轉塗佈無機氧化物的組合物、製造電子裝置之方法以及在矽基板上塗佈硬遮罩組合物之方法
KR102053921B1 (ko) * 2019-03-13 2019-12-09 영창케미칼 주식회사 반도체 제조 공정에 있어서 식각 패턴 신규 형성 방법
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Publication number Priority date Publication date Assignee Title
US10463500B2 (en) 2014-11-07 2019-11-05 Industrial Technology Research Institute Medical composite material, method for fabricating the same and applications thereof
US10195816B2 (en) 2014-12-01 2019-02-05 Industrial Technology Research Institute Metal/polymer composite material and method for fabricating the same

Also Published As

Publication number Publication date
US20070134916A1 (en) 2007-06-14
JP4553835B2 (ja) 2010-09-29
DE602006002095D1 (de) 2008-09-18
KR20070063440A (ko) 2007-06-19
JP2007163846A (ja) 2007-06-28
EP1798599A1 (en) 2007-06-20
TW200736839A (en) 2007-10-01
KR101319233B1 (ko) 2013-10-16
EP1798599B1 (en) 2008-08-06

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