TWI343601B - - Google Patents

Download PDF

Info

Publication number
TWI343601B
TWI343601B TW95108291A TW95108291A TWI343601B TW I343601 B TWI343601 B TW I343601B TW 95108291 A TW95108291 A TW 95108291A TW 95108291 A TW95108291 A TW 95108291A TW I343601 B TWI343601 B TW I343601B
Authority
TW
Taiwan
Prior art keywords
gas
etching
insulating film
interlayer insulating
hbr
Prior art date
Application number
TW95108291A
Other languages
English (en)
Chinese (zh)
Other versions
TW200735206A (en
Inventor
Toshio Hayashi
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to TW095108291A priority Critical patent/TW200735206A/zh
Publication of TW200735206A publication Critical patent/TW200735206A/zh
Application granted granted Critical
Publication of TWI343601B publication Critical patent/TWI343601B/zh

Links

Landscapes

  • Drying Of Semiconductors (AREA)
TW095108291A 2006-03-10 2006-03-10 Method of dry etching of interlayer insulation film and etching device TW200735206A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095108291A TW200735206A (en) 2006-03-10 2006-03-10 Method of dry etching of interlayer insulation film and etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095108291A TW200735206A (en) 2006-03-10 2006-03-10 Method of dry etching of interlayer insulation film and etching device

Publications (2)

Publication Number Publication Date
TW200735206A TW200735206A (en) 2007-09-16
TWI343601B true TWI343601B (ko) 2011-06-11

Family

ID=45074892

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095108291A TW200735206A (en) 2006-03-10 2006-03-10 Method of dry etching of interlayer insulation film and etching device

Country Status (1)

Country Link
TW (1) TW200735206A (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10607850B2 (en) 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
US11798811B2 (en) 2020-06-26 2023-10-24 American Air Liquide, Inc. Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10607850B2 (en) 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
US11430663B2 (en) 2016-12-30 2022-08-30 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
US11798811B2 (en) 2020-06-26 2023-10-24 American Air Liquide, Inc. Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures

Also Published As

Publication number Publication date
TW200735206A (en) 2007-09-16

Similar Documents

Publication Publication Date Title
JP3155513B2 (ja) 高密度プラズマ中での高アスペクト比フィーチャ用の異方性選択的窒化物エッチング方法
KR101476435B1 (ko) 다중-레이어 레지스트 플라즈마 에치 방법
JP2005050908A (ja) Ｌｓｉデバイスのエッチング方法および装置
JP2002509353A (ja) 有機マスク積層体を用いたパターン層の高温エッチング方法
JP2001223207A (ja) エッチングポリマーを利用した半導体素子の製造方法及び半導体素子
JP2001526461A (ja) 酸化窒化珪素と無機反射防止皮膜をエッチングするための方法
CN1524287A (zh) 用于蚀刻有机低k材料的特殊化学工艺
TWI284370B (en) Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
JP2988455B2 (ja) プラズマエッチング方法
JP5850043B2 (ja) エッチングガスおよびエッチング方法
KR20030051786A (ko) 드라이 에칭 가스 및 드라이 에칭 방법
TW200407998A (en) Method and compositions for hardening photoresist in etching processes
US20090191715A1 (en) Method for etching interlayer dielectric film
JPWO2018037799A1 (ja) プラズマエッチング方法
TWI343601B (ko)
JP4761502B2 (ja) 層間絶縁膜のドライエッチング方法
JPH11111680A (ja) エッチング方法
JP4651956B2 (ja) 層間絶縁膜のドライエッチング方法
JP4067357B2 (ja) エッチング方法
JP4643916B2 (ja) 層間絶縁膜のドライエッチング方法及びその装置
JP4982443B2 (ja) 層間絶縁膜のドライエッチング方法
JP2005079191A (ja) 層間絶縁膜のドライエッチング方法
WO2007105261A1 (ja) 層間絶縁膜のドライエッチング方法
JP4144795B2 (ja) 低誘電率層間絶縁膜のドライエッチング方法
KR100859308B1 (ko) 층간 절연막의 건식 에칭 방법