TWI342607B - Audio power amplifier package - Google Patents

Audio power amplifier package Download PDF

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Publication number
TWI342607B
TWI342607B TW096149785A TW96149785A TWI342607B TW I342607 B TWI342607 B TW I342607B TW 096149785 A TW096149785 A TW 096149785A TW 96149785 A TW96149785 A TW 96149785A TW I342607 B TWI342607 B TW I342607B
Authority
TW
Taiwan
Prior art keywords
power
pin
signal
pad
power source
Prior art date
Application number
TW096149785A
Other languages
English (en)
Other versions
TW200917439A (en
Inventor
Kuo Hung Wu
Poyu Li
Original Assignee
Himax Analogic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Himax Analogic Inc filed Critical Himax Analogic Inc
Publication of TW200917439A publication Critical patent/TW200917439A/zh
Application granted granted Critical
Publication of TWI342607B publication Critical patent/TWI342607B/zh

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Wire Bonding (AREA)

Description

1342607 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種封裝結構’且特別是有關於一種 音頻功率放大器（audio power amplifier)之封裝妹構。 【先前技術】 就現今的電子產品而言，其一般的封裝結構中會包括 半導體晶片（chip)以及與半導體晶片作電性連接的載體 (carrier)。目前，半導體晶片與載體連接的技術主要分為三 種，分別為銲線接合製程（wire_b〇n(iing process)、覆晶製程 (flip-chip process)以及捲帶式自動接合製程 (tape-amomated-bonding process，TAB)。倘若封裝結構中 的載體係為一導線架（lead frame)的話，則大多使用銲線接 合製程，藉以於導線架上進行半導體晶片與接腳（丨ead)的連 接製程。 對於一般藉由銲線接合製程所製作的音頻功率放大器 (audio power amplifier)而言，為了符合在設計音頻功率放 大器時封裝結構以及晶粒（die)所需的尺寸大小，音頻功率 放大器中的開關電路及其他電路（如：運算放大器以及能帶 間隙參考電路等）’必須同時經由音頻功率放大器封裝結構 其中之一接腳來接收供應電源，所以需要較大電源來進行 切換的開關電路通常會產生一些干擾和電源雜訊，而嚴重 影響需要純淨電源的運算放大器以及能帶間隙參考電路。 因此封裝結構中輝線接合及佈線（layout)的部分必須進行 5 調整，藉以解決干擾和電源雜訊的問題。 【發明内容】 因此本發明的目的疋在提供一種音頻功率放大器的 裝結構’藉以解決—般在音頻功率放大器封裝結構中所存 在的干擾和電源雜訊問冑，改善音頻功率放大器的效能。 依照本發明一實施例，提出一種音頻功率放大器封裝 結構。此音頻功率放大器封裝結構包含一非信號接腳、二 第非L號ip塾、一第二非信號銲替以及複數條辉線。第 -非信號銲墊以及第二非信號銲墊均位於一基板上。銲線 則分別連接非信號接腳於第一非信號銲墊以及第二非信號 在导塾0 依照本發明另-實施例，提出一種音頻功率放大器封 裝結構。此音頻功率放大器封裝結構包含—基板、複數個 銲墊、複數個接腳以及複數條銲線。上述銲墊係位於基板 上，並包含一第一非信號銲墊以及一第二非信號銲墊。上 述接腳係包含一非信號接腳。上述鲜線則分別連接非信號 接腳於第一非信號銲墊以及第二非信號銲墊。 根據本發明上述實施例可知，應用此音頻功率放大器 «結構可n般在音頻功率放大器封裝結構中所存在 的干擾和電源雜訊問題，且音頻功率放大器中的其他電路 (如：運算放大器以及能帶間隙參考電路等）可因此具有較佳 的電源抑制比（power supply rejecti〇n ratio，PSRR)。此外， 也可藉此改善音頻功率放大器的總諧波失真附加雜訊（total 1342607 harmonic distortion plus noise，THD+N)。 【實施方式】 本發明的實施例係揭露一種音頻功率放大器的封裝結 構，其包括一非信號接腳（lead)、兩非信號銲塾（pacj)以及複 數條銲線（bonding wire)。上述銲線係將非信號接腳分別連 接於兩非信號銲墊，使得信號可各別自非信號接腳經由銲 線傳送至兩非信號銲墊。如此一來，在音頻功率放大器的 操作過程中便可避免干擾和電源雜訊的問題發生。 第1圖係繪示依照本發明實施例之一種音頻功率放大 器封裝結構的俯視示意圖。此音頻功率放大器封裝結構^⑽ 包括一晶片110、複數個接腳120以及複數條銲線13〇，其 中晶片110更包括一基板112以及複數個銲墊1Μ。銲墊 U4係位於基板n2上，並藉由銲線13〇電性連接於接腳 12〇。此外，上述銲墊114包括一第一非信號銲墊u4a以 及一第二非信號銲墊114b，其中第一非信號銲墊ιΐ4&以及 第二非信號銲墊114b兩者在本實施例中均為電源銲墊。上 述接腳120則包括一非信號接腳122，其中非信號接腳 在本實施例中係為一電源接腳。 上述銲線130中的一部份係用以藉由銲線接合製程 (wire-bonding process)，將非信號接腳丨22分別連接於第一 非信號銲塾114a以及第二非信號料⑽：亦即，電源接 腳係藉由鋒，線130 A別電性連接於電源銲墊。如此一來， 第一非信號銲墊ma(如：電源料）便可自非信號接腳 7 1342607 122(如：電源接腳）經由相對應之銲線130之至少其中之一 者接收用來供應電源給音頻功率放大器中運算放大器及 能帶間隙參考電路等電路的第—電源（如：純淨電源）；第二 非信號銲墊U4b(如：電料墊）也可同時自非信號接腳122 經由相對應之_線13G之至少其中之—者，接收用來供應 電源給音頻功率放大器中開關電路的第二電源（如：切換電 源）。因此，不同用途的電源可如上述所言各別傳送至相對 應的銲墊，藉以避免當供應電源傳送至晶片丨丨〇時發生干 擾和電源雜訊的問題。 此外，上述的實施例中係使用電源銲墊/接腳作為例子 來說明，而在另一實施例中亦可使用接地（gr〇und)銲墊/接 腳，藉以取代上述的電源銲墊/接腳。亦即，上述「非信號 所指的是供應電源或接地的功能。 根據本發明上述實施例可知，應用此音頻功率放大器 封裝結構可解決一般在音頻功率放大器封裝結構中所存在 的干擾和電源雜訊問題，且音頻功率放大器中的其他電路 (如：運算放大器以及能帶間隙參考電路等）可因此具有較佳 的電源抑制比（power supply rejecti〇n rati〇，psRR)。此外， 也可藉此改善音頻功率放大器的總諧波失真附加雜訊(咖 harmonic distortion plus noise，THD+N)。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何所屬技術領域中具有通常知識者，在不脫= 本發明之精神和範圍内，當可作各種之更動與潤飾，因此 本發明之保護範圍當視後附之申請專利範圍所界定者 8 1342607 準〇 【圖式簡單說明】 第1圖係繪示依照本發明實施例之一種音頻功率放大 器封裝結構的俯視示意圖。 【主要元件符號說明】 100 :音頻功率放大器封裝結構 110 :晶片 112 :基板 114 :銲墊 114a :第一非信號銲墊 114b :第二非信號銲墊 120 :接腳 122 :非信號接腳 130 :銲線 9

Claims (1)

1342607 2010年12月30日修正替換頁 十、申請專利範圍： ，包含： 1· 一種音頻功率放大器封裝結構 一非信號接腳； 一第一非信號銲墊’位於—基板上； 一第二非信號銲墊，位於該基板上；以及 複數條銲線，分別連接該非信號接腳於該第一非信號 銲墊以及該第二非信號銲墊； 其中該第一非信號銲墊係用以接收自該非信號接腳經 由邊些銲線之至少其中之—者所傳送之—第—電源，該第 一非k號銲墊係用以接收自該非信號接腳經由該些銲線之 至少其中之一者所傳送之一第二電源，且該第二電源係大 於該第一電源。 2.如申請專利範圍第1項所述之音頻功率放大器封裝 結構’其中該非信號接腳係為一電源接腳。 3· —種音頻功率放大器封裝結構，包含： 一基板； 複數個h塾，位於該基板上，該些銲塾包含一第一電 源銲墊以及一第二電源銲墊，該第一電源銲墊係用以接收 一第一電源，該第二電源銲墊係用以接收大於該第一電源 之一第二電源； 複數個接腳，該些接腳包含一非信號接腳；以及 複數條銲線，分別連接該非信號接腳於該第一電源銲 10 1342607
2〇丨〇年丨2月3〇日修正替換頁
=該第二電源鲜塾，其中該第一電源鲜塾係用以接收 自該非k號接腳經㈣些銲線之至少其中之—者所傳送之 該第一電源’該第二電源桿墊剌以接收自該非信號接聊 經由該些銲線之至少其中之—者所傳送之該第二電源。 4.如申請專利範圍第3項所述之音頻功率放大器封裝 結構，其中該非信號接腳係為一電源接腳。 5· —種音頻功率放大器封裝結構，包含： 一電源接腳； 第電源鲜塾，經由複數條銲線之至少其中之一者 連接該電源接腳，以接收自該電源接腳所傳送之〆第一電 源；以及 一第二電源銲塾’經由該些銲線之至少其中之/者連 接该電源接腳，以接收自該電源接腳所傳送之/第二電 源’且該第二電源係大於該第一電源。 1342607 年丨邛卜日修正替換頁 2010年12月30日修正替換頁
丫 §
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