TWI336481B - Multilayer capacitor - Google Patents
Multilayer capacitor Download PDFInfo
- Publication number
- TWI336481B TWI336481B TW095148488A TW95148488A TWI336481B TW I336481 B TWI336481 B TW I336481B TW 095148488 A TW095148488 A TW 095148488A TW 95148488 A TW95148488 A TW 95148488A TW I336481 B TWI336481 B TW I336481B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductor
- conductors
- terminal
- multilayer body
- multilayer
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims description 2266
- 239000004020 conductor Substances 0.000 claims description 6741
- 239000000463 material Substances 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 5
- 230000001568 sexual effect Effects 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 67
- 238000003475 lamination Methods 0.000 description 55
- 230000015572 biosynthetic process Effects 0.000 description 46
- 230000001965 increasing effect Effects 0.000 description 42
- 101000679735 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) 60S ribosomal protein L16-A Proteins 0.000 description 34
- 238000000605 extraction Methods 0.000 description 28
- 238000010030 laminating Methods 0.000 description 27
- 101710154747 60S ribosomal protein L23a Proteins 0.000 description 26
- 230000000694 effects Effects 0.000 description 25
- 101000720426 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) 60S ribosomal protein L23-A Proteins 0.000 description 20
- 101000720428 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) 60S ribosomal protein L23-B Proteins 0.000 description 20
- 101710187785 60S ribosomal protein L1-A Proteins 0.000 description 17
- 101710187786 60S ribosomal protein L1-B Proteins 0.000 description 17
- 230000008859 change Effects 0.000 description 13
- 101001070647 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) 60S ribosomal protein L20-A Proteins 0.000 description 8
- 101001070655 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) 60S ribosomal protein L20-B Proteins 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 101100272667 Xenopus laevis ripply2.2 gene Proteins 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 241000239226 Scorpiones Species 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- VPWFPZBFBFHIIL-UHFFFAOYSA-L disodium 4-[(4-methyl-2-sulfophenyl)diazenyl]-3-oxidonaphthalene-2-carboxylate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)C1=CC(C)=CC=C1N=NC1=C(O)C(C([O-])=O)=CC2=CC=CC=C12 VPWFPZBFBFHIIL-UHFFFAOYSA-L 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/313,614 US7088569B1 (en) | 2005-12-22 | 2005-12-22 | Multilayer capacitor |
| US11/474,306 US7428135B2 (en) | 2006-06-26 | 2006-06-26 | Multilayer capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200739625A TW200739625A (en) | 2007-10-16 |
| TWI336481B true TWI336481B (en) | 2011-01-21 |
Family
ID=38299890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095148488A TWI336481B (en) | 2005-12-22 | 2006-12-22 | Multilayer capacitor |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP4213744B2 (https=) |
| KR (1) | KR100872006B1 (https=) |
| TW (1) | TWI336481B (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100887124B1 (ko) * | 2007-08-06 | 2009-03-04 | 삼성전기주식회사 | 적층형 칩 커패시터 |
| JP4502007B2 (ja) * | 2007-12-28 | 2010-07-14 | Ｔｄｋ株式会社 | 貫通型積層コンデンサアレイ |
| JP4502006B2 (ja) * | 2007-12-28 | 2010-07-14 | Ｔｄｋ株式会社 | 貫通型積層コンデンサアレイ |
| JP4548492B2 (ja) * | 2008-02-13 | 2010-09-22 | Ｔｄｋ株式会社 | 積層コンデンサアレイ |
| KR100925628B1 (ko) | 2008-03-07 | 2009-11-06 | 삼성전기주식회사 | 적층형 칩 커패시터 |
| JP4957709B2 (ja) | 2008-11-26 | 2012-06-20 | 株式会社村田製作所 | 積層コンデンサ |
| JP5343997B2 (ja) * | 2011-04-22 | 2013-11-13 | Ｔｄｋ株式会社 | 積層コンデンサの実装構造 |
| KR101376925B1 (ko) | 2012-12-10 | 2014-03-20 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 그 제조 방법 |
| KR20140038912A (ko) * | 2013-10-01 | 2014-03-31 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 그 실장 기판 |
| US20180190431A1 (en) * | 2015-08-26 | 2018-07-05 | Tdk Corporation | Electronic device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5849430U (ja) * | 1981-09-28 | 1983-04-04 | 京セラ株式会社 | チツプ状複合電子部品 |
| KR100384112B1 (ko) * | 2000-08-30 | 2003-05-14 | 주식회사 이노칩테크놀로지 | 병렬형 저항-커패시터 복합 칩 및 그 제조 방법 |
| US7054136B2 (en) | 2002-06-06 | 2006-05-30 | Avx Corporation | Controlled ESR low inductance multilayer ceramic capacitor |
| JP4097268B2 (ja) * | 2004-02-26 | 2008-06-11 | Ｔｄｋ株式会社 | 積層コンデンサ |
| JP4086812B2 (ja) | 2004-05-31 | 2008-05-14 | Ｔｄｋ株式会社 | 積層コンデンサ |
| JP3832505B2 (ja) * | 2004-12-24 | 2006-10-11 | 株式会社村田製作所 | 積層コンデンサおよびその実装構造 |
| JP2007043093A (ja) * | 2005-07-05 | 2007-02-15 | Taiyo Yuden Co Ltd | 積層コンデンサ |
-
2006
- 2006-12-21 JP JP2006344989A patent/JP4213744B2/ja active Active
- 2006-12-22 KR KR1020060133173A patent/KR100872006B1/ko active Active
- 2006-12-22 TW TW095148488A patent/TWI336481B/zh active
-
2008
- 2008-07-22 JP JP2008189059A patent/JP4911133B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070066996A (ko) | 2007-06-27 |
| TW200739625A (en) | 2007-10-16 |
| JP4911133B2 (ja) | 2012-04-04 |
| JP2007173838A (ja) | 2007-07-05 |
| JP2009027172A (ja) | 2009-02-05 |
| JP4213744B2 (ja) | 2009-01-21 |
| KR100872006B1 (ko) | 2008-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |