TWI328831B - Heat insulation structure, heating device, heating system, substrate processing apparatus, and manufacturing method for a semiconductor device - Google Patents

Heat insulation structure, heating device, heating system, substrate processing apparatus, and manufacturing method for a semiconductor device Download PDF

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Publication number
TWI328831B
TWI328831B TW096105963A TW96105963A TWI328831B TW I328831 B TWI328831 B TW I328831B TW 096105963 A TW096105963 A TW 096105963A TW 96105963 A TW96105963 A TW 96105963A TW I328831 B TWI328831 B TW I328831B
Authority
TW
Taiwan
Prior art keywords
heat insulating
side wall
cooling gas
insulating structure
structure according
Prior art date
Application number
TW096105963A
Other languages
English (en)
Chinese (zh)
Other versions
TW200834650A (en
Inventor
Ken Kojima
Shinobu Sugiura
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW200834650A publication Critical patent/TW200834650A/zh
Application granted granted Critical
Publication of TWI328831B publication Critical patent/TWI328831B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
TW096105963A 2007-02-09 2007-02-16 Heat insulation structure, heating device, heating system, substrate processing apparatus, and manufacturing method for a semiconductor device TWI328831B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/052335 WO2008099449A1 (ja) 2007-02-09 2007-02-09 断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200834650A TW200834650A (en) 2008-08-16
TWI328831B true TWI328831B (en) 2010-08-11

Family

ID=39689710

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105963A TWI328831B (en) 2007-02-09 2007-02-16 Heat insulation structure, heating device, heating system, substrate processing apparatus, and manufacturing method for a semiconductor device

Country Status (5)

Country Link
JP (1) JP5089401B2 (ja)
KR (1) KR100932965B1 (ja)
CN (1) CN101395705B (ja)
TW (1) TWI328831B (ja)
WO (1) WO2008099449A1 (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5364314B2 (ja) * 2008-08-28 2013-12-11 東京応化工業株式会社 熱処理装置
JP5504793B2 (ja) * 2009-09-26 2014-05-28 東京エレクトロン株式会社 熱処理装置及び冷却方法
DE102010008084A1 (de) * 2010-02-15 2011-08-18 Leybold Optics GmbH, 63755 Vorrichtung zur thermischen Behandlung von Substraten
JP5568387B2 (ja) * 2010-06-22 2014-08-06 株式会社日立国際電気 加熱装置及び基板処理方法並びに基板処理装置
JP5721219B2 (ja) * 2010-07-09 2015-05-20 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び加熱装置
JP2012080080A (ja) * 2010-09-07 2012-04-19 Tokyo Electron Ltd 縦型熱処理装置及びその制御方法
KR101375742B1 (ko) * 2012-12-18 2014-03-19 주식회사 유진테크 기판처리장치
JP6170847B2 (ja) 2013-03-25 2017-07-26 株式会社日立国際電気 断熱構造体、加熱装置、基板処理装置および半導体装置の製造方法
CN105960701B (zh) 2014-03-20 2019-04-05 株式会社国际电气 衬底处理装置、顶棚部及半导体器件的制造方法
CN106756879A (zh) * 2015-11-23 2017-05-31 中国科学院沈阳科学仪器股份有限公司 一种半导体严苛工艺环境下的真空干泵氮气加热装置
WO2018105113A1 (ja) * 2016-12-09 2018-06-14 株式会社日立国際電気 基板処理装置、クーリングユニット及び断熱構造体
JP6735686B2 (ja) * 2017-01-20 2020-08-05 東京エレクトロン株式会社 基板処理装置及び基板の冷却方法
US11043402B2 (en) 2017-09-12 2021-06-22 Kokusai Electric Corporation Cooling unit, heat insulating structure, and substrate processing apparatus
JP6752851B2 (ja) * 2017-09-12 2020-09-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クーリングユニット、基板処理装置、および半導体装置の製造方法
JP7023147B2 (ja) * 2018-03-13 2022-02-21 東京エレクトロン株式会社 断熱構造体及び縦型熱処理装置
CN110736345B (zh) * 2018-07-18 2021-01-29 北京北方华创微电子装备有限公司 用于SiC高温氧化工艺的工艺腔室及热处理炉
JP7055075B2 (ja) * 2018-07-20 2022-04-15 東京エレクトロン株式会社 熱処理装置及び熱処理方法
JP7262194B2 (ja) * 2018-09-18 2023-04-21 東京エレクトロン株式会社 載置台及び基板処理装置
CN111128785A (zh) * 2018-10-30 2020-05-08 北京北方华创微电子装备有限公司 一种热处理装置
CN115540341B (zh) * 2022-03-12 2023-09-08 无锡恒业电热电器有限公司 高温高压空气蓄能电加热器
CN117116814B (zh) * 2023-10-23 2024-04-05 芯恺半导体设备(徐州)有限责任公司 基板处理设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8801785U1 (ja) * 1988-02-11 1988-11-10 Soehlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried, De
JP3108134B2 (ja) * 1991-06-17 2000-11-13 株式会社リケン 縦型電気炉
JP3184000B2 (ja) * 1993-05-10 2001-07-09 株式会社東芝 薄膜の形成方法およびその装置
JP4404620B2 (ja) * 2003-12-22 2010-01-27 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP4495498B2 (ja) * 2004-03-29 2010-07-07 株式会社日立国際電気 基板処理装置および半導体装置の製造方法

Also Published As

Publication number Publication date
CN101395705B (zh) 2011-08-10
WO2008099449A1 (ja) 2008-08-21
CN101395705A (zh) 2009-03-25
TW200834650A (en) 2008-08-16
KR20080091423A (ko) 2008-10-13
KR100932965B1 (ko) 2009-12-21
JP5089401B2 (ja) 2012-12-05
JPWO2008099449A1 (ja) 2010-05-27

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