1328831 (1) 九、發明說明 【發明所屬之技術領域】 本發明是關於隔熱構造體、加熱裝置、加熱系統、基 板處理裝置及半導體裝置的製造方法。 詳言之，是關於急冷技術。 本發明是關於一種例如利用在半導體積體電路裝置（ 以下稱爲1C)之製造方法所使用的CVD裝置或擴散裝置、 | 氧化裝置及退火裝置等的熱處理裝置（furnace)相當有效的 技術。 【先前技術】 1C的製造方法當中，爲了在可作成包含半導體元件之 積體電路的半導體晶圓（以下稱爲晶圓）形成氮化矽（Si3N4) 或氧化矽及多晶矽等的CVD膜，廣泛使用一種批次式縱 型熱壁形減壓CVD裝置。 • 批次式縱型熱壁形減壓CVD裝置（以下稱爲CVD裝置 )具備有：由得以搬入晶圓的內管以及包圍內管的外管所 構成，並且設置成縱型的處理管；將作爲處理氣體的成膜 氣體供應至藉由處理管所形成的處理室的氣體供應管：使 處理室真空排氣的排氣管；鋪設在處理管外並加熱處理室 的加熱單元；藉由晶舟升降器而升降，使處理室的爐口開 閉的密封蓋；以及垂直設在密封蓋上並保持複數片晶圓的 晶舟。 接下來，複數片晶圓會在由晶舟朝垂直方向整齊排列 -4- (2) (2)1328831 而被保持的狀態下，從下端的爐口被搬入至處理室（晶舟 承載器），並且在爐口由密封蓋封住的狀態下，成膜氣體 會從氣體供應管被供應至處理室，並且由加熱單元加熱處 理室，而在晶圓上堆積CVD膜。 就以往的這種CVD裝置而言，有一種是以完全包圍 處理管的方式形成可使冷卻空氣在加熱單元與處理管之間 的空間流通的冷卻空氣通路，並且在與處理管之爐口附近 相對向的冷卻空氣通路下端部連接有供氣管的CVD裝置 。例如，參照專利文獻1。 專利文獻1:日本特開2005-183823號公報 【發明內容】 〔發明所欲解決之課題〕 然而，在有供氣管連接於冷卻空氣通路之下端部的 CVD裝置當中，從供氣管被導入至冷卻空氣通路的冷卻空 氣會一面吸收加熱單元及處理管的熱，一面在冷卻空氣通 路中逐漸上升，因此在處理管的上部無法充分發揮冷卻效 果。 該結果，處理管上下間的溫度梯度會變得很陡，因此 ，處理管的溫度到達預期値爲止的時間就會變長。 又，一旦處理管上下間的溫度梯度變陡，被保持在晶 舟上部的晶圓的溫度履歷與被保持在晶舟下部的晶圓的溫 度履歷的差就會變大，因此，被保持在晶舟上部的處理完 畢晶圓之膜質、與被保持在晶舟下部的處理完畢晶圓之膜 -5- (3) 1328831 質就會產生差異。 本發明之目的是爲了解決這種問題點，並提供一種可 使隔熱構造體或處理管整體均一地急冷的隔熱構造體 '加 熱裝置、加熱系統、基板處理裝置及半導體裝置的製造方 法。 〔用以解決課題之手段〕 φ 用以解決前述課題的手段當中代表性者如以下所述。 一種隔熱構造體，是使用於縱向設置的加熱裝置的隔 熱構造體，其特徵爲： . 具有形成圓筒形狀的側壁部，該側壁部是形成內外複 數層構造， 並且具有： 設在配置於該側壁部之複數層當中之外側的側壁外層 之上部的冷卻氣體供應口； • 設在配置於前述側壁部之複數層當中之內側的側壁內 層與前述側壁外層之間的冷卻氣體通路； 設在前述側壁內層之內側的空間；以及 爲了從前述冷卻氣體通路將冷卻氣體吹出至前述空間 ，而設在前述側壁內層之比前述冷卻氣體供應口更爲下方 的複數個吹出孔。 〔發明效果〕 根據前述手段，可將最冷狀態的冷卻氣體供應至最容 -6- (4) 易充滿熱的隔熱構造體上部，因此可使隔熱構造體整體均 一地冷卻。 【實施方式】 以下，根據圖面來說明本發明之一實施形態。 本實施形態當中，如第1圖及第2圖所示，本發明之 基板處理裝置是構成1C之製造方法當中用來實施成膜步 驟的CVD裝置（批次式縱型熱壁形減壓CVD裝置）10。 第1圖及第2圖所示的CVD裝置10具備：使中心線 形成垂直而縱向配置並受到支持的縱型處理管11，處理管 11是由彼此配置成同心圓的外管12及內管13所構成》 外管12是使用石英（Si 02)，並且一體形成上端封閉， 下端開口的圓筒形狀。 內管13是形成上下兩端開口的圓筒形狀。內管13的 筒中空部是形成可搬入後述晶舟的處理室14，內管13的 下端開口是構成爲使晶舟出入的爐口 1 5。 如後文所述，晶舟是將複數片晶圓以長長地整齊排列 的狀態加以保持而構成。因此，內管13的內徑是設定爲 大於所要處理的晶圓的最大外徑（例如直徑300mm)。 外管12與內管13之間的下端部是由構成大致圓筒形 狀的歧管16密封成氣密狀態。爲了進行外管12及內管13 的更換等，歧管16是分別在外管12及內管13安裝成可 自由安裝/拆卸的狀態。 由於歧管16是被支持在CVD裝置的框體2，因此處 (5) 1328831 理管11是形成被垂直固定的狀態。 藉由外管12與內管13的間隙，排氣路17是構成橫 剖面形狀爲一定寬度的圓形環狀。 如第1圖所示，在歧管16之側壁的上部連接有排氣 管18的一端，排氣管18是形成通到排氣路17之最下端 ' 部的狀態。 在排氣管18的另一端連接有由壓力控制器21所控制 | 的排氣裝置19，在排氣管18的中途連接有壓力感測器20 〇 壓力控制器2 1是根據來自壓力感測器20之測定結果 對排氣裝置1 9進行反饋控制而構成。 在歧管16的下方有氣體導入管22配設成通到內管13 的爐口 15,在氣體導入管22連接有原料氣體供應裝置及 惰性氣體供應裝置（以下稱爲氣體供應裝置）23。氣體供應 裝置2 3是由氣體流量控制器24所控制而構成。 從氣體導入管22被導入至爐口 15的氣體會在內管13 的處理室14內流通，然後通過排氣路17而由排氣管18 排出。 在歧管16有爲使下端開口封閉的密封蓋25從垂直方 向下側與其相接。密封蓋25是構成與歧管16之外徑大致 同等的圓盤形狀，並藉由設在框體2之待機室3的晶舟升 降器26朝垂直方向升降而構成。 晶舟升降器26是由電動機驅動的進給螺桿軸裝置及 波紋管等所構成，晶舟升降器26的電動機27是由驅動控1328831 (1) Description of the Invention [Technical Field] The present invention relates to a heat insulating structure, a heating device, a heating system, a substrate processing device, and a method of manufacturing a semiconductor device. In more detail, it is about quenching technology. The present invention relates to a technique which is effective for a heat treatment apparatus such as a CVD apparatus or a diffusion apparatus, an oxidation apparatus, and an annealing apparatus used in a method of manufacturing a semiconductor integrated circuit device (hereinafter referred to as 1C). [Prior Art] In the manufacturing method of 1C, in order to form a CVD film of tantalum nitride (Si3N4), tantalum oxide, or polysilicon in a semiconductor wafer (hereinafter referred to as a wafer) in which an integrated circuit including a semiconductor element can be formed, A batch type vertical hot wall type decompression CVD apparatus was used. • A batch type vertical hot wall type decompression CVD apparatus (hereinafter referred to as a CVD apparatus) includes: an inner tube that can be carried into the wafer and an outer tube that surrounds the inner tube, and is provided as a vertical processing tube; a gas supply tube that supplies a film forming gas as a processing gas to a processing chamber formed by a processing tube: an exhaust pipe that evacuates the processing chamber; a heating unit that is disposed outside the processing tube and heats the processing chamber; A sealing cover for lifting and lowering the crystal boat lifter to open and close the furnace opening of the processing chamber; and a boat boat vertically disposed on the sealing cover and holding a plurality of wafers. Next, a plurality of wafers are carried into the processing chamber (the boat carrier) from the lower end of the furnace in a state in which the wafer boat is aligned in the vertical direction by -4- (2) (2) 1328831. And in a state where the furnace mouth is sealed by the sealing cover, the film forming gas is supplied from the gas supply pipe to the processing chamber, and the processing chamber is heated by the heating unit to deposit a CVD film on the wafer. In the conventional CVD apparatus, there is a cooling air passage which allows cooling air to flow in a space between the heating unit and the processing tube so as to completely surround the processing tube, and is adjacent to the furnace opening of the processing tube. A CVD device for connecting the gas supply pipe to the lower end portion of the opposite cooling air passage. For example, refer to Patent Document 1. [Problem to be Solved by the Invention] However, in the CVD apparatus having the gas supply pipe connected to the lower end portion of the cooling air passage, the gas supply pipe is introduced to the cooling. The cooling air in the air passage absorbs the heat of the heating unit and the processing tube while gradually rising in the cooling air passage, so that the cooling effect cannot be sufficiently exerted on the upper portion of the processing tube. As a result, the temperature gradient between the upper and lower sides of the processing tube becomes steep, and therefore, the time until the temperature of the processing tube reaches the expected enthalpy becomes long. Further, when the temperature gradient between the upper and lower sides of the processing tube becomes steep, the difference between the temperature history of the wafer held on the upper portion of the wafer boat and the temperature history of the wafer held in the lower portion of the wafer boat becomes large, and therefore, There is a difference between the film quality of the processed wafer on the upper part of the wafer boat and the film -5-(3) 1328831 of the processed wafer held in the lower part of the boat. An object of the present invention is to solve such a problem and to provide a heat insulating structure, a heating device, a heating system, a substrate processing device, and a semiconductor device, which can uniformly cool the heat insulating structure or the entire processing tube. [Means for Solving the Problem] φ Representatives of the means for solving the above problems are as follows. A heat insulating structure is a heat insulating structure for a heating device disposed in a longitudinal direction, and has a side wall portion formed in a cylindrical shape, the side wall portion being formed into an inner and outer plurality of layers, and having: a cooling gas supply port on an outer portion of the outer side wall of the outer side of the plurality of layers of the side wall portion; a cooling gas passage between the inner side wall of the inner side of the plurality of layers disposed on the side wall portion and the outer layer of the side wall; a space provided inside the inner wall of the side wall; and a plurality of blowing holes provided in the inner wall of the side wall below the cooling gas supply port in order to blow the cooling gas from the cooling gas passage to the space. [Effect of the Invention] According to the above means, the cooling gas in the coldest state can be supplied to the uppermost portion of the heat-insulating structure which is most -6-(4), so that the entire heat-insulating structure can be uniformly cooled. [Embodiment] Hereinafter, an embodiment of the present invention will be described based on the drawings. In the present embodiment, as shown in Figs. 1 and 2, the substrate processing apparatus of the present invention is a CVD apparatus (batch type vertical hot wall type decompression CVD) for performing a film forming step in the manufacturing method of 1C. Device) 10. The CVD apparatus 10 shown in Figs. 1 and 2 includes a vertical processing tube 11 in which a center line is formed vertically and vertically and supported, and the processing tube 11 is an outer tube 12 and an inner tube which are arranged concentrically with each other. Structure 13: The outer tube 12 is made of quartz (Si 02), and has a cylindrical shape in which the upper end is closed and the lower end is open. The inner tube 13 has a cylindrical shape in which the upper and lower ends are opened. The hollow portion of the inner tube 13 is formed into a processing chamber 14 into which a wafer boat to be described later is formed, and the lower end opening of the inner tube 13 is a furnace opening 15 which is configured to allow the boat to enter and exit. As will be described later, the wafer boat is constructed by holding a plurality of wafers in a state of being long and neatly arranged. Therefore, the inner diameter of the inner tube 13 is set to be larger than the maximum outer diameter of the wafer to be processed (e.g., 300 mm in diameter). The lower end portion between the outer tube 12 and the inner tube 13 is sealed in an airtight state by a manifold 16 which is formed in a substantially cylindrical shape. In order to replace the outer tube 12 and the inner tube 13, the manifold 16 is attached to the outer tube 12 and the inner tube 13 so as to be freely attachable/detachable. Since the manifold 16 is supported by the frame 2 of the CVD apparatus, the (11) 1328831 management tube 11 is formed in a state of being vertically fixed. The exhaust passage 17 is a circular ring shape having a constant cross-sectional shape by a gap between the outer tube 12 and the inner tube 13. As shown in Fig. 1, one end of the exhaust pipe 18 is connected to the upper portion of the side wall of the manifold 16, and the exhaust pipe 18 is formed to pass to the lowermost end portion of the exhaust passage 17. An exhaust device 19 controlled by a pressure controller 21 is connected to the other end of the exhaust pipe 18, and a pressure sensor 20 is connected in the middle of the exhaust pipe 18. The pressure controller 2 1 is based on pressure sensing. The measurement result of the device 20 is configured by feedback control of the exhaust device 19. A gas introduction pipe 22 is disposed below the manifold 16 to be connected to the furnace port 15 of the inner pipe 13, and a raw material gas supply device and an inert gas supply device (hereinafter referred to as a gas supply device) 23 are connected to the gas introduction pipe 22. The gas supply device 23 is constituted by the gas flow controller 24. The gas introduced into the furnace port 15 from the gas introduction pipe 22 flows through the processing chamber 14 of the inner pipe 13, and is then discharged through the exhaust pipe 18 through the exhaust pipe 17. The manifold 16 has a sealing cover 25 for closing the lower end opening to be in contact with it from the vertical side to the lower side. The seal cover 25 is formed in a disk shape substantially equal to the outer diameter of the manifold 16, and is configured to be vertically moved up and down by the boat lifter 26 provided in the standby chamber 3 of the casing 2. The boat lifter 26 is composed of a feed screw shaft device driven by an electric motor, a bellows, etc., and the motor 27 of the boat lifter 26 is driven by a drive.
(S -8- (6) (6)1328831 制器28控制而構成》 密封蓋25的中心線上配置有旋轉軸30，並且被支持 成可自由旋轉的狀態，旋轉軸30是藉由受驅動控制器28 所控制的電動機29驅動旋轉而構成。 在旋轉軸30的上端有晶舟31支持成垂直狀態。 晶舟31在上下具備一對端板32、33;以及垂直架設 在這些之間的三根保持構件34，在三根保持構件34上朝 長邊方向以等間隔刻設有多數個保持溝35。在三根保持構 件34當中，被刻設在同一段的保持溝35、35、35彼此是 相對向而開口。 晶舟31是藉由將晶圓1插入三根保持構件34之同一 段的保持溝3 5間，使複數片晶圓1整齊排列成水平並且 彼此使中心對齊的狀態而加以保持。 在晶舟31與旋轉軸30之間配置有隔熱帽蓋部36。 旋轉軸30是藉由將晶舟31支持成從密封蓋25的上 面舉起的狀態，使晶舟31的下端僅以適當的距離從爐口 15的位置分開而構成。隔熱帽蓋部36是使爐口 15的附近 隔熱。 在處理管11的外側有縱向配置之作爲加熱裝置的加 熱單元40配置成同心圓狀態’並且以被支持在框體2的 狀態設置。 加熱單元40具備殼體41。殼體41是使用不鏽鋼 (SUS)，並且形成上端封閉，下端開口的筒形狀，較佳爲 圓筒形狀。殼體41的內徑及全長是被設定爲大於外管12 -9- (7) (7)1328831 的外徑及全長。 在殼體41內設置有本發明之一實施形態的隔熱構造 體42。 本實施形態的隔熱構造體42是形成筒形狀，較佳爲 圓筒形狀，其圓筒體的側壁部43是形成內外兩層的複數 層構造。亦即，隔熱構造體42具備：配置在側壁部43當 中之外側的側壁外層44 ;以及配置在側壁部當中之內側的 側壁內層4 5。 如第3圖所示，圓筒體的側壁外層44的外徑是被設 定爲小於殼體41的內徑，在側壁外層44的外周面與殻體 4 1的內周面之間沿著各自的全周形成有間隙46。 側壁外層44的內徑是被設定爲大於圓筒體的側壁內 層45的外徑，藉由側壁外層44的內周面與側壁內層45 的外周面之間所形成的間隙，形成有冷卻氣體通路47。 在側壁外層44的內周面有複數個（第3圖當中爲12 條）區隔壁48從上端到下端沿著側壁外層44的圓周方向 以等間隔配置。各區隔壁48是朝側壁外層44的徑向內側 突出，其前端面是與側壁內層45的外周面相接。因此， 冷卻氣體通路47是由複數個區隔壁48區隔成複數個（第3 圖當中有12個部位的空間），藉此分別形成冷卻氣體通路 空間49。複數個冷卻氣體通路空間49之水平方向的流路 剖面積分別形成爲大於各個複數個區隔壁48之水平方向 的剖面積。 側壁內層45是藉由朝垂直方向堆疊複數個隔熱塊50 -10- (8) 1328831 而構成一個圓筒體》 隔熱塊50是以大致甜甜圈狀形成短的中空圓筒形狀 。隔熱塊50較佳爲使用纖維狀或球狀的氧化鋁或二氧化 矽等材料。例如是使用也可作爲絕緣材（insulating _ material)的隔熱材，並藉由真空成型法的成形模一體成形 〇 在隔熱塊50之下端部的內周側有結合雄部（凸部）52 P 形成將隔熱塊50之內周的一部分切缺成圓形環狀的狀態 。又’在隔熱塊50之上端部的外周側有結合雌部（凹部）53 形成將隔熱塊50之外周的一部分切缺成圓形環狀的狀態 〇 在隔熱塊50之上端部的內周側形成有朝內側方向突 出的突出部51a。 一個隔熱塊50的結合雄部52與另一個隔熱塊50的 結合雌部53可藉由上下重疊而結合。因此，在相鄰的上 # 下隔熱塊50的突出部51a間會形成一定深度、一定高度 ，必使安裝發熱體用的安裝溝（凹部）54形成將側壁內層45 之內周面切缺成圓形環狀的狀態。安裝溝54是相對於各 個隔熱塊50 —個個地對應，形成一個封閉的圓形。 如第4圖（b)所示，在安裝溝54的內周面有複數個彎 曲鋸齒形狀的保持具55朝圓周方向以大致等間隔安裝。 藉由此複數個保持具55可使發熱體56定位並且受到支持 〇 安裝溝54是使其上下方向的寬度隨著越接近圓筒形 -11 - (9) (9)1328831 狀之側壁內層45的外徑方向（與圓筒之中心相反的方向）， 亦即溝槽底5 4a，就越爲狹窄而形成。 亦即，在位於安裝溝54之上下的突出部51a的側壁 彼此，也就是一對側壁形成有斜面54b、54c，兩斜面54b 、54c間的距離是越靠近安裝溝54的溝槽底54a就越小。 發熱體5 6只要是發熱材料，則可爲任何材料，但較 佳爲使用Fe-Cr-Al合金或是MOSi2及SiC等的電阻發熱 材料。 發熱體56是如第4圖（a)所示，形成剖面爲長方形的 平板狀，上側波部5 6a與上側間隙5 6c以及下側波部5 6b 與下側間隙5 6 d是分別交互形成而成爲波形。這些是藉由 沖壓加工或雷射切斷加工等而一體成形。 發熱體56是沿著隔熱塊50的內周設成環狀，也就是 圓形環狀。 發熱體56所形成的圓形環狀的外徑是比安裝溝54之 內徑（內周面的直徑）只小一些。又，發熱體56所形成的圓 形環狀的內徑是比突出部51a之內徑只大一些。 此外，發熱體56是以安裝溝54與發熱體56之剖面 的長邊形成平行狀態的方式配置。 藉由以上的構成，便形成成爲圓形環狀的發熱體56 的環狀部57。 發熱體56的環狀部57是設在每一個隔熱塊50的安 裝溝54。 亦即’環狀部57是藉由突出部51a，與上下相鄰的另 -12- (10) 1328831 —個發熱體56的環狀部57隔離而設置。 如第4圖（a)(b)所示，複數個保持具55、55是從上側 間隙56c的下端跨越到下側間隙56d的上端而分別配置， . 並且從安裝溝54僅以預定長度插入隔熱塊50內。如此， 發熱體56會被保持在從安裝溝54的內周面分開的狀態。 如第3圖及第4圖所示，在環狀部57的兩端有一對 供電部58、58，與圓形環狀的圓周方向爲直角地朝半徑方 • 向外分別彎曲而形成。 在一對供電部58、58的前端部有一對連接部59、59 以彼此朝反方向的方式，與供電部58、58之延伸方向爲 直角地分別彎曲而形成。 在對應於一對供電部58、58的隔熱塊50分別形成有 —對插入溝60、60。兩插入溝60、60是從安裝溝54內周 面朝半徑方向形成至隔熱塊50的外周面。 兩供電部58、58是分別插入在兩插入溝60' 60。 ® 在上段的一對連接部59、59當中的一個連接部59焊 接有供電端子61，在另一個連接部59焊接有橋接線62的 上端部。橋接線62的下端部是與相鄰的正下段的一個連 接部59連接。 如第1圖所示，發熱體56是與發熱體驅動裝置63連 接’發熱體驅動裝置63是由溫度控制器64控制而構成。 在加熱單元40的側壁部有用來計測處理室1 4之溫度 的熱電耦65於上下方向保持間隔配置有複數條，並且分 別朝徑向插入。各熱電耦65會分別將計測結果傳送到溫 -13- (11) (11)(S -8- (6) (6) 1328331 The controller 28 is controlled by the control. The rotary shaft 30 is disposed on the center line of the seal cover 25, and is supported in a freely rotatable state. The rotary shaft 30 is controlled by the drive. The motor 29 controlled by the motor 28 is driven to rotate. The wafer boat 31 is supported in a vertical state at the upper end of the rotating shaft 30. The boat 31 has a pair of end plates 32, 33 on the upper and lower sides, and three vertically disposed between the two. In the holding member 34, a plurality of holding grooves 35 are formed at equal intervals in the longitudinal direction on the three holding members 34. Among the three holding members 34, the holding grooves 35, 35, 35 which are engraved in the same stage are opposed to each other. The wafer boat 31 is held by inserting the wafer 1 between the holding grooves 35 of the same section of the three holding members 34, and arranging the plurality of wafers 1 in a horizontal arrangement and centering each other. A heat insulating cap portion 36 is disposed between the wafer boat 31 and the rotating shaft 30. The rotating shaft 30 is supported by the wafer boat 31 so as to be lifted from the upper surface of the sealing cover 25, so that the lower end of the boat 31 is only The appropriate distance is formed by separating the position of the furnace opening 15. The heat cap portion 36 heats the vicinity of the furnace opening 15. The heating unit 40, which is disposed in the longitudinal direction of the processing tube 11, as a heating means, is disposed in a concentric state and is provided in a state of being supported by the casing 2. The heating unit 40 is provided with a casing 41. The casing 41 is made of stainless steel (SUS) and has a cylindrical shape in which the upper end is closed and the lower end is open, and preferably has a cylindrical shape. The inner diameter and the overall length of the casing 41 are set to be larger than the outer diameter. The outer diameter and the total length of the tube 12 -9- (7) (7) 1328331. The heat insulating structure 42 of one embodiment of the present invention is provided in the casing 41. The heat insulating structure 42 of the present embodiment is formed into a cylinder. The shape is preferably a cylindrical shape, and the side wall portion 43 of the cylindrical body is a plurality of layers forming the inner and outer layers. That is, the heat insulating structure 42 includes a side wall outer layer 44 disposed on the outer side of the side wall portion 43; And a side wall inner layer 45 disposed inside the side wall portion. As shown in Fig. 3, the outer diameter of the side wall outer layer 44 of the cylindrical body is set to be smaller than the inner diameter of the casing 41 at the outer periphery of the side wall outer layer 44. The surface and the inner peripheral surface of the casing 41 are along their respective full circumferences There is a gap 46. The inner diameter of the side wall outer layer 44 is set to be larger than the outer diameter of the side wall inner layer 45 of the cylindrical body, formed by the inner peripheral surface of the side wall outer layer 44 and the outer peripheral surface of the side wall inner layer 45. The gap is formed with a cooling gas passage 47. The inner peripheral surface of the side wall outer layer 44 has a plurality of (12 in the third drawing) partition walls 48 which are disposed at equal intervals along the circumferential direction of the side wall outer layer 44 from the upper end to the lower end. The partition wall 48 projects toward the radially inner side of the side wall outer layer 44, and the front end surface thereof is in contact with the outer peripheral surface of the side wall inner layer 45. Therefore, the cooling gas passage 47 is divided into a plurality of partition walls 48 (the third) There are 12 spaces in the figure), thereby forming cooling gas passage spaces 49, respectively. The cross-sectional areas of the flow paths in the horizontal direction of the plurality of cooling gas passage spaces 49 are formed to be larger than the cross-sectional areas in the horizontal direction of the plurality of partition walls 48, respectively. The side wall inner layer 45 is formed by stacking a plurality of heat insulating blocks 50 -10- (8) 1328831 in a vertical direction to form a cylindrical body. The heat insulating block 50 is formed in a short hollow cylindrical shape in a substantially donut shape. The heat insulating block 50 is preferably made of a material such as fibrous or spherical alumina or cerium oxide. For example, it is used as a heat insulating material which can also be used as an insulating material, and is integrally formed by a forming die of a vacuum forming method. The inner peripheral side of the lower end portion of the heat insulating block 50 has a joint male portion (convex portion). 52 P forms a state in which a part of the inner circumference of the heat insulating block 50 is cut into a circular ring shape. Further, a female portion (concave portion) 53 is formed on the outer peripheral side of the upper end portion of the heat insulating block 50 to form a state in which a part of the outer periphery of the heat insulating block 50 is cut into a circular ring shape at the upper end portion of the heat insulating block 50. A protruding portion 51a that protrudes in the inward direction is formed on the inner peripheral side. The combined male portion 52 of one insulating block 50 and the female portion 53 of the other insulating block 50 can be joined by overlapping one another. Therefore, a certain depth and a certain height are formed between the protruding portions 51a of the adjacent upper heat insulating block 50, and the mounting groove (recessed portion) 54 for mounting the heating element must be formed to cut the inner peripheral surface of the side wall inner layer 45. It lacks a circular ring shape. The mounting grooves 54 are formed one by one with respect to the respective heat insulating blocks 50 to form a closed circular shape. As shown in Fig. 4(b), a plurality of holders 55 having a meandering zigzag shape on the inner circumferential surface of the mounting groove 54 are attached at substantially equal intervals in the circumferential direction. By means of the plurality of holders 55, the heating element 56 can be positioned and supported. The mounting groove 54 is such that the width in the up and down direction is closer to the cylindrical -11 - (9) (9) 1328831 side wall inner layer The outer diameter direction of 45 (the direction opposite to the center of the cylinder), that is, the groove bottom portion 5 4a, is formed to be narrower. That is, the side walls of the protruding portion 51a located above the mounting groove 54 are formed with inclined faces 54b, 54c, that is, the distance between the inclined faces 54b, 54c is closer to the groove bottom 54a of the mounting groove 54. The smaller. The heating element 56 may be any material as long as it is a heat generating material, but it is preferably a Fe-Cr-Al alloy or a resistance heating material such as MOSi2 or SiC. The heating element 56 has a flat plate shape having a rectangular cross section as shown in Fig. 4(a), and the upper wave portion 56a and the upper side gap 56c, and the lower side wave portion 596b and the lower side gap 615d are formed alternately. And become a waveform. These are integrally formed by press working, laser cutting, and the like. The heating element 56 is formed in a ring shape along the inner circumference of the heat insulating block 50, that is, a circular ring shape. The outer diameter of the circular ring formed by the heating element 56 is smaller than the inner diameter (the diameter of the inner circumferential surface) of the mounting groove 54. Further, the inner diameter of the circular ring formed by the heating element 56 is larger than the inner diameter of the protruding portion 51a. Further, the heating element 56 is disposed such that the mounting groove 54 and the long side of the cross section of the heating element 56 are formed in parallel. According to the above configuration, the annular portion 57 which is the circular heat generating body 56 is formed. The annular portion 57 of the heating element 56 is provided in the mounting groove 54 of each of the heat insulating blocks 50. That is, the annular portion 57 is provided by the protruding portion 51a and is separated from the annular portion 57 of the heating element 56 of the other -12-(10) 1328831 adjacent to the upper and lower sides. As shown in Fig. 4 (a) and (b), the plurality of holders 55 and 55 are respectively disposed from the lower end of the upper side gap 56c to the upper end of the lower side gap 56d, and are inserted only from the mounting groove 54 by a predetermined length. Inside the insulating block 50. In this manner, the heating element 56 is held in a state of being separated from the inner circumferential surface of the mounting groove 54. As shown in Figs. 3 and 4, a pair of power supply portions 58, 58 are formed at both ends of the annular portion 57, and are formed by bending outwardly at a right angle to the circumferential direction of the circular ring shape. A pair of connecting portions 59, 59 are formed at the front end portions of the pair of power feeding portions 58, 58 so as to be opposite to each other so as to be opposite to each other, and the extending directions of the feeding portions 58 and 58 are bent at right angles. The pair of insertion grooves 60 and 60 are formed in the heat insulating block 50 corresponding to the pair of power supply portions 58, 58, respectively. The two insertion grooves 60, 60 are formed in the radial direction from the inner circumferential surface of the attachment groove 54 to the outer circumferential surface of the heat insulating block 50. The two power supply portions 58, 58 are inserted into the two insertion grooves 60' 60, respectively. ® one of the pair of connecting portions 59, 59 of the upper stage is welded with the power supply terminal 61, and the other connecting portion 59 is welded with the upper end portion of the bridge wire 62. The lower end portion of the bridge wire 62 is connected to a connecting portion 59 of the adjacent lower portion. As shown in Fig. 1, the heating element 56 is connected to the heating element driving device 63. The heating element driving device 63 is controlled by the temperature controller 64. In the side wall portion of the heating unit 40, a thermocouple 65 for measuring the temperature of the processing chamber 14 is disposed at a plurality of intervals in the vertical direction, and is inserted in the radial direction. Each thermocouple 65 will transmit the measurement result to the temperature -13- (11) (11)
1328831 度控制器64。 溫度控制器64是藉由來自熱電耦65的計測 發熱體驅動裝置63進行反饋控制。 並且，溫度控制器64是將複數個發熱體56 控制範圍而構成一個控制區，並將該控制區以構 控制區，例如四個控制區的方式連接》 如第2圖所示，在殼體41的上部，也就是 面有導管71配置成環狀。在導管71的外周面開 冷卻氣體的冷卻氣體導入口 72，在冷卻氣體導入 接有供應冷卻氣體的供氣管73。 在側壁外層44之與導管71相對向的位置有 卻氣體供應口 74朝圓周方向均等地配置。複數個 體供應口 74是爲了避開複數個區隔壁48，而分別 與冷卻氣體通路47相對向的位置。 亦即，複數個冷卻氣體供應口 74是配置成分 卻氣體通路47的複數個冷卻氣體通路空間49相對 且各自連通。 在側壁內層45的內側形成有用來設置處理管 間（以下稱爲內側空間）75。 在側壁內層45，比冷卻氣體供應口 74更下方 設有複數個於圓柱狀開孔的支持孔76(參照第5圖: 支持孔76分別插入有作爲與側壁內層45之材料爲 體的絕緣材料的圓筒形狀之噴嘴77。 如第5圖所示，由噴嘴77的中空部，形成有 L度，對 爲一個 :複數個 .端外周 :有供應 ]72連 :數個冷 冷卻氣 配置在 別與冷 應，並 1 1的空 的位置 >。在各 不同個 從冷卻 -14- (12) (12)1328831 氣體通路47將冷卻氣體吹出至內側空間75的吹出孔78。 此外，在支持孔76於側壁內層45的外周面側設有階 梯狀的凹面76a。又，在噴嘴77設有與凹面76a嵌合的凸 面77a。亦即，爲了使噴嘴77確實嵌入支持孔76，設有 移動防止部。藉此，可避免噴嘴77隨著冷卻氣體的流動 而朝內側空間7 5側移動。 較佳爲’噴嘴77若由氧化鋁成分的含有率比側壁內 層45之材料還要高的陶瓷材所形成，則耐久性佳。 再者，較佳爲’噴嘴77若是具有比側壁內層45之材 料還高密度的材料，則耐久性佳。 再者’較佳爲，噴嘴77若是具有高硬度的材料，則 耐久性佳。 再者’較佳爲，噴嘴77若是具有比側壁內層45之材 料還高彎曲強度的材料，則耐久性佳。 如第5圖所示，較佳爲，噴嘴77最好分別配置在隔 熱塊50的突出部51a。 在突出部51a於噴嘴77之吹出孔78相對向的位置形 成有切口部79。切口部79是從冷卻氣體通路空間49側朝 向內側空間7 5側逐漸使開口面積變大而形成倒角形狀。 第6圖是隔熱構造體42的展開圖。 如第6圖所示，形成吹出孔78的噴嘴77是相對於冷 卻氣體通路空間49配置成列狀，並且各設有複數列。噴 嘴77是分別比冷卻氣體通路空間49之圓周方向中央偏向 於雙方之區隔壁48、48之側而設成列狀。 -15- (13) (13)1328831 噴嘴77是相對於冷卻氣體通路空間49設有2列。 複數條噴嘴77之吹出孔78的開口剖面積是以大致相 同的尺寸形成。 複數條噴嘴77是爲了避開設有區隔壁48的位置’而 分別設在與冷·探1氣體通路· 47相對·向的位° 又，複數條噴嘴77是以從吹出孔78吹出的冷卻氣體 會避開發熱體56而吹出的方式配置。 _嘴77是在於圓周方向大致均等地設置的複數個冷 卻氣體通路空間4 9當中的—對供電部5 8、5 8附近的冷卻 氣體通路空間49配置最多。 如第2圖及第6圖所示，本實施形態當中，複數個控 制區是將加熱單元的上端側朝向下端側分割成五個控制區 U、CU、c、CL、L。 設在複數個控制區當中最下段之控制區的複數個噴嘴 77之吹出孔78的總開口面積是被設定爲大於設在複數個 控制區當中最上段之控制區的複數個噴嘴77之吹出孔78 的總開口面積。 本實施形態當中，設在最下段之控制區L的吹出孔 78的總開口面積是被設定爲大於最上段的控制區U。 在設有四段以上之複數個控制區的情況下，設在四段 以上之控制區當中從最下段起兩段之控制區的複數個噴嘴 77之吹出孔78的總開口面積是被設定爲大於設在四段以 上之控制區當中從最上段起兩段之控制區的複數個噴嘴77 之吹出孔78的總開口面積。 (s -16- (14) 1328831 本實施形態當中，設在第四段之控制區CL及第五段 之控制區L的吹出孔78的總開口面積是被設定爲大於第 一段的控制區U及第二段的控制區CU。 設在複數個控制區當中最下段之控制區的噴嘴77之 吹出孔78的衝突噴流量是被設定爲大於設在複數個控制 區當中最上段之控制區的噴嘴77之吹出孔78的衝突噴流 量。 • 本實施形態當中，設在最下段之控制區L的吹出孔 78的衝突噴流量是被設定爲大於最上段的控制區u。 在設有四段以上之複數個控制區的情況下，設在四段 . 以上之控制區當中從最下段起兩段之控制區的噴嘴77之 吹出孔78的衝突噴流量是被設定爲大於設在四段以上之 控制區當中從最上段起兩段之控制區的噴嘴77之吹出孔 78的衝突噴流量。 本實施形態當中，設在第四段之控制區CL及第五段 • 之控制區L的噴嘴77之吹出孔78的衝突噴流量是被設定 爲大於第一段的控制區U及第二段的控制區CU。 如第2圖及第6圖所示，吹出孔78是至少從有會被 載置於晶舟3 1的產品晶圓之區域AR的最上段大致相同的 高度，設至有產品晶圓之區域AR的最下段。 如第1圖及第2圖所示，在隔熱構造體42之側壁部 43的上端側有作爲天頂部的天頂壁部80以封閉內側空間 75的方式覆蓋。 在天頂壁部80形成有作爲將內側空間75的氣體排出 17- (15) 1328831 的排氣路徑之一部分的排氣孔8 1 ’排氣孔8 1之上游側端 的下端是通到內側空間75。 排氣孔8 1的下游側端是與排氣導管82連接。 以下說明利用前述構成之CVD裝置的1C之製造方法 中的成膜步驟。 如第1圖所示，當預先指定之片數的晶圓1被裝塡在 晶舟31時，保持有晶圓1群的晶舟31會因爲密封蓋25 • 藉由晶舟升降器26上升，而逐漸被搬入（晶舟裝載）內管 1 3的處理室14。 達到上限的密封蓋25會壓接於歧管16，而形成將處 理管1 1之內部密封的狀態。晶舟3 1是以由密封蓋25支 持的狀態被存放在處理室14。 接下來，處理管11的內部可藉由排氣管18而排氣。 又，溫度控制器64會進行程序控制，並藉由側壁發 熱體56將處理管11的內部加熱至目標溫度。 • 處理管11之內部的實際上升溫度與溫度控制器64之 程序控制的目標溫度的誤差可藉由根據熱電耦65之計測 結果的反饋控制而獲得補正。 又，晶舟31可藉由電動機29而旋轉。 當處理管11的內壓及溫度、晶舟31的旋轉整體形成 —定的穩定狀態時，在處理管11的處理室14會有原料氣 體由氣體供應裝置23從氣體導入管22被導入。 由氣體導入管22導入的原料氣體會在內管13的處理 室14內流通，並且通過排氣路17而由排氣管18排出。 -18- (16) 1328831 在處理室14流通時，原料氣體因爲與被加熱至預 處理溫度之晶圓1接觸所產生的熱CVD反應，在晶圓 會形成CVD膜。 經過預定的處理時間時，在處理氣體的導入停止之 ’氮氣等的純化氣體會從氣體導入管22被導入處理管 的內部。 同時，作爲冷卻氣體的冷卻空氣90會從供氣管73 B 供應至冷卻氣體導入口 72。所供應的冷卻空氣90會在 狀的導管71內整體地擴散，並且從複數個冷卻氣體供 口 74流入冷卻氣體通路47的複數個冷卻氣體通路空間 〇 流入各冷卻氣體通路空間49的冷卻空氣90會在各 卻氣體通路空間49流下，並且從配置在各冷卻氣體通 空間49的噴嘴77的吹出孔78分別吹出至內側空間75 從吹出孔78吹出至內側空間75的冷卻空氣90會 # 排氣孔8 1及排氣導管8 2排氣。 藉由以上的冷卻空氣90之流動’加熱單元40全體 被迫冷卻，因此隔熱構造體42會與處理管11 一同以大 速率（速度）急速冷卻。 此外，內側空間75是與處理室14隔離’因此可使 冷卻空氣90作爲冷卻氣體。 然而，爲了更爲提高冷卻效果、或是爲了防止由於 氣內之雜質而導致發熱體在高溫下的腐餓’'亦胃& 等的惰性氣體作爲冷卻氣體。 定 後 11 被 環 應 4 9 冷 路 由 會 的 用 空 氣 -19- (17) (17)1328831 當處理室14的溫度下降到預定溫度時，由密封蓋25 支持的晶舟31會因爲晶舟升降器26而下降，因此會從處 理室14被搬出（晶舟卸載）。 之後藉由反覆前述作用，逐步藉由CVD裝置10實施 對於晶圓1的成膜處理。 此外，外管12及加熱單元40的溫度不僅不需要維持 在處理溫度以上，下降至未滿處理溫度反而較好，因此前 述成膜步驟當中，由於冷卻空氣90會在內側空間75流通 ，而可迫使外管1 2及加熱單元40冷卻。 藉由此冷卻，例如，若是氮化矽膜，可將外管1 2的 溫度維持在可防止NH4C1之附著的150°C左右。 又，通常隔熱構造體42容易因爲熱體流等的作用， 使上端側的熱變得比下側端還要高。因此，例如，在冷卻 空氣90被供應至冷卻氣體通路47之下端部的情況下，冷 卻空氣90會一面吸收隔熱構造體42的熱，一面在冷卻氣 體通路47逐漸上升，因此在隔熱構造體42的上部無法獲 得所希望的冷卻效果，結果在處理管11的上部便無法充 分發揮冷卻效果。 本實施形態當中，由於冷卻空氣90是以經過冷卻的 新鮮狀態被供應至冷卻氣體通路47的上端部，因此可藉 由冷卻後的冷卻空氣90使溫度上升最大的上端部側冷卻 〇 接下來會—面吸收隔熱構造體42的熱，一面在冷卻 氣體通路47的各冷卻氣體通路空間49下降，因此冷卻空 -20- (18) (18)1328831 氣90會慢慢熱上升，而且冷卻效果會隨著下降而慢慢變 小〇 然而，隔熱構造體42越靠近下端側’所蓄積的熱量 就越少，因此冷卻空氣90的冷卻效果少’反而可使隔熱 構造體42整體均一地冷卻。 又，在冷卻氣體通路47之各冷卻氣體通路空間49 — 面使隔熱構造體42冷卻一面流下的冷卻空氣90’會從配 置在各冷卻氣體通路空間49的噴嘴77的吹出孔78朝向 徑向內側吹出，然後以衝突噴流（參照第7圖）的狀態吹拂 在處理管11之外管12的表面，因此可使外管12，也就是 處理管11整體均一地冷卻。 在此，參照第7圖來說明利用衝突噴流的熱傳達率。 在室溫及大氣中利用衝突噴流的熱傳導率h可用以下 式子（1)來表示。 h = Nu · λ/d …（1) 式子（1)中，λ是空氣的熱傳導率。D是吹出孔78的 口徑。Nu是努塞爾特數。 因此’熱傳導率h會因爲努塞爾特數Nu而變化。 努塞爾特數Nu在吹出孔的口徑d、從吹出孔到外管 12的距離L的關係的情況下，會是如以下式子（2)的關係 -21 - (19) 13288311328831 degrees controller 64. The temperature controller 64 is feedback-controlled by the heating element driving unit 63 from the thermocouple 65. Moreover, the temperature controller 64 controls the range of the plurality of heating elements 56 to form a control area, and connects the control area in a configuration control area, for example, four control areas, as shown in FIG. 2, in the housing. The upper portion of 41, that is, the surface of the tube 71 is arranged in a ring shape. A cooling gas introduction port 72 for cooling gas is opened on the outer peripheral surface of the duct 71, and an air supply pipe 73 for supplying a cooling gas is introduced into the cooling gas. At the position of the side wall outer layer 44 opposed to the duct 71, the gas supply port 74 is equally disposed in the circumferential direction. The plurality of individual supply ports 74 are positions facing the cooling gas passages 47 in order to avoid the plurality of partition walls 48. That is, a plurality of cooling gas supply ports 74 are disposed, but a plurality of cooling gas passage spaces 49 of the gas passages 47 are opposed to each other and communicate with each other. A processing chamber (hereinafter referred to as an inner space) 75 is formed inside the side wall inner layer 45. In the side wall inner layer 45, a plurality of support holes 76 for the cylindrical opening are provided below the cooling gas supply port 74 (refer to FIG. 5: the support holes 76 are respectively inserted as the material of the inner layer 45 of the side wall. A cylindrical nozzle 71 of an insulating material. As shown in Fig. 5, the hollow portion of the nozzle 77 is formed with an L degree, and the pair is one: a plurality of ends. The outer circumference: there is a supply] 72 connection: several cold cooling gas It is disposed at an empty position other than the cold, and 1 1 . The cooling gas is blown out to the blowing hole 78 of the inner space 75 in each of the different cooling--14- (12) (12) 1320831 gas passages 47. The support hole 76 is provided with a stepped concave surface 76a on the outer peripheral surface side of the side wall inner layer 45. Further, the nozzle 77 is provided with a convex surface 77a fitted to the concave surface 76a. That is, in order to allow the nozzle 77 to be surely fitted into the support hole 76. The movement preventing portion is provided, whereby the nozzle 77 can be prevented from moving toward the inner space 75 side with the flow of the cooling gas. Preferably, the material of the nozzle 77 is larger than the material of the side wall 45. If it is formed of a high ceramic material, it is excellent in durability. If the nozzle 77 has a material having a higher density than the material of the side wall inner layer 45, the durability is good. Further, it is preferable that the nozzle 77 has a high hardness and is excellent in durability. If the nozzle 77 has a material having a higher bending strength than the material of the side wall inner layer 45, the durability is good. As shown in Fig. 5, preferably, the nozzles 77 are preferably disposed on the protruding portions 51a of the heat insulating block 50, respectively. A notch portion 79 is formed at a position where the protruding portion 51a faces the blowing hole 78 of the nozzle 77. The notch portion 79 gradually increases the opening area from the side of the cooling gas passage space 49 toward the side of the inner space 75 to form a chamfered shape. Fig. 6 is a development view of the heat insulating structure 42. As shown in Fig. 6, the nozzles 77 forming the blowing holes 78 are arranged in a row with respect to the cooling gas passage space 49, and are provided in a plurality of rows. Each of the partition walls 48 and 48 is biased toward the center of the circumferential direction of the cooling gas passage space 49, and is arranged in a row. -15- (13) (13) 1328331 The nozzle 77 is provided with respect to the cooling gas passage space 49. There are 2 columns. The blowing of a plurality of nozzles 77 The opening cross-sectional area of 78 is formed in substantially the same size. The plurality of nozzles 77 are provided at positions opposite to the cold probe 1 gas passage 47 in order to avoid the position where the partition wall 48 is provided. The nozzles 77 are disposed such that the cooling gas blown from the blowing holes 78 is blown away from the development of the hot body 56. The nozzles 77 are provided in a plurality of cooling gas passage spaces 49 which are disposed substantially uniformly in the circumferential direction. The cooling gas passage space 49 in the vicinity of the portions 5 8 and 5 8 is disposed at the most. As shown in Figs. 2 and 6 , in the present embodiment, the plurality of control regions divide the upper end side of the heating unit into five at the lower end side. Control area U, CU, c, CL, L. The total opening area of the blowing holes 78 of the plurality of nozzles 77 provided in the control section of the lowermost one of the plurality of control zones is a blowing hole of a plurality of nozzles 77 set to be larger than the control zone of the uppermost section among the plurality of control zones. The total opening area of 78. In the present embodiment, the total opening area of the blowing holes 78 provided in the lowermost control zone L is set to be larger than the uppermost control zone U. In the case where a plurality of control zones of four or more stages are provided, the total opening area of the plurality of nozzles 77 of the control zones provided in the control zones of the four sections from the lowermost section is set to The total opening area of the plurality of nozzles 77 of the plurality of nozzles 77 in the control zone of the two sections from the uppermost section among the control zones of four or more sections. (s -16- (14) 1328831 In the present embodiment, the total opening area of the blowing holes 78 provided in the control zone CL of the fourth stage and the control zone L of the fifth stage is set to be larger than the control section of the first section. U and the second section of the control zone CU. The conflicting jet flow of the blowing hole 78 of the nozzle 77 provided in the lowermost control zone among the plurality of control zones is set to be larger than the control zone provided in the uppermost section among the plurality of control zones In the present embodiment, the collision flow rate of the blow hole 78 provided in the lowermost control zone L is set to be larger than the uppermost control zone u. In the case of a plurality of control zones above the segment, the collision flow rate of the blowing holes 78 of the nozzles 77 of the control zone from the lowermost section is set to be larger than the four segments. In the above control zone, the collision flow rate of the blow hole 78 of the nozzle 77 of the control zone of the two sections from the uppermost section is provided in the fourth section of the control zone CL and the fifth section of the control zone L. The conflicting jet flow rate of the blow hole 78 of the nozzle 77 is It is set to be larger than the control zone U of the first segment and the control zone CU of the second segment. As shown in FIGS. 2 and 6, the blowout hole 78 is at least from a product wafer that is to be placed on the wafer boat 31. The height of the uppermost portion of the region AR is substantially the same as that of the region AR of the product wafer. As shown in Figs. 1 and 2, the upper end side of the side wall portion 43 of the heat insulating structure 42 is provided. The zenith wall portion 80 of the top of the sky is covered so as to close the inner space 75. The zenith wall portion 80 is formed with a vent hole 8 1 ' as a part of the exhaust path for discharging the gas of the inner space 75 17-(15) 1328831 The lower end of the upstream side end of the vent hole 8 1 is opened to the inner space 75. The downstream side end of the vent hole 8 1 is connected to the exhaust duct 82. Hereinafter, the manufacturing method of the 1C manufacturing method using the CVD apparatus of the above configuration will be described. Membrane step As shown in Fig. 1, when a predetermined number of wafers 1 are mounted on the wafer boat 31, the wafer boat 31 holding the wafer group 1 will be lifted by the crystal boat by the sealing cover 25 The device 26 is raised and gradually moved into the processing chamber 14 of the inner tube 13 of the boat (the boat is loaded). The cover 25 is crimped to the manifold 16 to form a state in which the inside of the process tube 11 is sealed. The boat 31 is stored in the process chamber 14 in a state supported by the seal cover 25. Next, the process tube 11 is processed. The inside can be exhausted by the exhaust pipe 18. Further, the temperature controller 64 performs program control, and the inside of the processing tube 11 is heated to the target temperature by the side wall heating body 56. • The actual rise inside the processing tube 11 The error of the programmed target temperature of the temperature and temperature controller 64 can be corrected by feedback control based on the measurement result of the thermocouple 65. Also, the boat 31 can be rotated by the motor 29. When the internal pressure and temperature of the processing tube 11 and the rotation of the wafer boat 31 are all in a stable state, the raw material gas is introduced from the gas introduction pipe 22 by the gas supply device 23 in the processing chamber 14 of the processing tube 11. The material gas introduced from the gas introduction pipe 22 flows through the processing chamber 14 of the inner tube 13, and is discharged through the exhaust pipe 18 through the exhaust passage 17. -18- (16) 1328831 When the processing chamber 14 is circulated, a CVD film is formed on the wafer due to thermal CVD reaction of the material gas due to contact with the wafer 1 heated to the pretreatment temperature. When the predetermined processing time has elapsed, the purge gas such as nitrogen gas is introduced into the processing tube from the gas introduction pipe 22 when the introduction of the process gas is stopped. At the same time, the cooling air 90 as a cooling gas is supplied from the air supply pipe 73 B to the cooling gas introduction port 72. The supplied cooling air 90 is integrally diffused in the duct 71, and flows from the plurality of cooling gas supply ports 74 into the plurality of cooling gas passage spaces of the cooling gas passage 47, and the cooling air 90 flowing into the respective cooling gas passage spaces 49. The cooling air 90 that is blown out from the blowing holes 78 of the nozzles 77 arranged in the respective cooling gas passages 49 to the inner space 75 and blown out from the blowing holes 78 to the inner space 75 will be exhausted in each of the gas passage spaces 49. The orifice 8 1 and the exhaust conduit 8 2 are vented. By the flow of the above cooling air 90, the entire heating unit 40 is forced to cool, so that the heat insulating structure 42 is rapidly cooled at a large rate (speed) together with the processing tube 11. In addition, the inner space 75 is isolated from the processing chamber 14 so that the cooling air 90 can be used as a cooling gas. However, in order to further improve the cooling effect, or to prevent the heat generating body from being rotted at a high temperature due to impurities in the gas, an inert gas such as a stomach and the like is used as a cooling gas. After the fixed 11 is ringed, the air used for the cold routing will be 19- (17) (17) 13283831. When the temperature of the processing chamber 14 drops to a predetermined temperature, the boat 31 supported by the sealing cover 25 will rise and fall because of the boat. The device 26 is lowered, so that it is carried out from the processing chamber 14 (the boat is unloaded). Thereafter, the film formation process for the wafer 1 is gradually performed by the CVD apparatus 10 by repeating the above-described effects. In addition, the temperature of the outer tube 12 and the heating unit 40 need not be maintained at a temperature higher than the processing temperature, but it is preferable to fall to the under-treatment temperature. Therefore, in the film forming step, since the cooling air 90 is circulated in the inner space 75, The outer tube 12 and the heating unit 40 are forced to cool. By cooling thereby, for example, if the tantalum nitride film is used, the temperature of the outer tube 12 can be maintained at about 150 ° C which can prevent the adhesion of NH4C1. Further, in general, the heat insulating structure 42 is likely to have higher heat on the upper end side than the lower end side due to the action of the hot body flow or the like. Therefore, for example, when the cooling air 90 is supplied to the lower end portion of the cooling gas passage 47, the cooling air 90 absorbs the heat of the heat insulating structure 42 and gradually rises in the cooling gas passage 47, so that the heat insulating structure is formed. The desired upper cooling effect cannot be obtained in the upper portion of the body 42, and as a result, the cooling effect cannot be sufficiently exhibited in the upper portion of the treatment tube 11. In the present embodiment, since the cooling air 90 is supplied to the upper end portion of the cooling gas passage 47 in a fresh state of being cooled, the upper end portion side where the temperature rises most can be cooled by the cooled cooling air 90. The heat of the surface absorbing heat insulating structure 42 is lowered in each of the cooling gas passage spaces 49 of the cooling gas passage 47, so that the cooling air -20-(18)(18)1328831 gas 90 is slowly heated up, and the cooling effect is obtained. However, as the heat insulating structure 42 is closer to the lower end side, the amount of heat accumulated is smaller, so that the cooling air 90 has less cooling effect. On the contrary, the heat insulating structure 42 can be uniformly formed as a whole. cool down. Further, the cooling air 90' flowing down from the cooling gas passage space 49 of the cooling gas passage 47 while cooling the heat insulating structure 42 is directed from the blowing hole 78 of the nozzle 77 disposed in each cooling gas passage space 49 toward the radial direction. The inner side is blown out, and then the surface of the tube 12 outside the processing tube 11 is blown in a state of a collision jet (refer to Fig. 7), so that the outer tube 12, that is, the processing tube 11, can be uniformly cooled as a whole. Here, the heat transfer rate using the collision jet will be described with reference to FIG. The thermal conductivity h using the conflict jet at room temperature and in the atmosphere can be expressed by the following formula (1). h = Nu · λ/d (1) In the formula (1), λ is the thermal conductivity of air. D is the diameter of the blowout hole 78. Nu is the Nusselt number. Therefore, the thermal conductivity h changes due to the Nusselt number Nu. In the case where the Nusselt number Nu has a relationship between the diameter d of the blow-out hole and the distance L from the blow-out hole to the outer tube 12, it is a relationship of the following formula (2) -21 - (19) 1328831
Nu = a · Re1/2 · Pr2/5 …（2) 式子（2)中，Re是雷諾値，Rr是普朗特數。普朗特數 Pr是在是溫下的空氣的物性値，普朗特數Pr = 0.71。 雷諾値Re可用以下式子（3)來表示》 雷諾値：Re = U · L/v…（3) 式子（3)中，U是來自吹出孔的噴流的流速，v是在室 溫下的空氣的動黏滯係數。 從式子（3)的雷諾値Re，熱傳導率h是與來自吹出孔 的噴流之流速U的平方根成正比。 ' 流速U可從噴流之軌道的壓力差來計算，吹出孔的吹 出側（上游側）與所要吹出之側（下游側）之間的壓力差越大 ，流速U就越大。 # 因此，藉由考慮最適當的熱傳導率h的分布，可推測 最適當的吹出孔的數量。 本實施形態當中，冷卻氣體是從設在側壁上部的冷卻 氣體供應口 74流入冷卻氣體通路空間49，然後冷卻氣體 會朝向下側在冷卻氣體通路空間49流動。由於上側的吹 出孔78的數量減少，因此冷卻氣體通路空間49會變得遠 比上側吹出孔78的總開口面積還要大，朝向下側的冷卻 氣體的流體較容易維持，下側的壓力會變得比冷卻氣體通 路空間49的上側還要大。因此，可使從冷卻氣體通路空 -22- (20) (20)1328831 間49下側的一個吹出孔78吹出的冷卻氣體的衝突噴流量 增加。 根據前述實施形態，可獲得以下效果。 (1) 藉由將最冷狀態的冷卻氣體導入最容易充滿熱的隔 熱構造體的上部，可有效進行熱交換。 (2) 藉由使冷卻氣體從隔熱構造體的上端部流動’比起 使冷卻氣體從隔熱構造體的下端部流動，可增加冷卻氣體 的流路，因此可與隔熱構造體有效地進行熱交換。 (3) 在將冷卻氣體導入加熱單元的冷卻氣體導入口的散 熱激烈。尤其，爲了在處理室內正處理晶圓當中’使處理 管冷卻而使冷卻氣體流動時，溫度會局部下降’因此會對 晶圓的處理狀態帶來不良影響。又，將冷卻氣體導入口設 在加熱單元之下部的情況下，除了由於冷卻氣體導入口所 導致的散熱之外，爲了防止位於加熱單元之下端部的加熱 單元的開口部及爐口的影響，一般會實施在晶舟與密封蓋 之間設置隔熱筒或隔熱板的散熱對策，但是儘管如此還是 會散熱》因此，爲了補足此散去的熱，過度將電力供應至 配置於加熱單元下部的發熱體的狀態，也就是過負荷狀態 容易變得頻繁，因而容易斷線。 本實施形態當中，由於是在加熱單元將冷卻氣體流動 的冷卻氣體導入口設在上端部，因此可使最容易充滿熱的 隔熱構造體上部有效冷卻，而且可消除配置在下部的發熱 體的過負荷狀態。 (4) 藉由將冷卻氣體通路以區隔壁區隔成複數個冷卻氣Nu = a · Re1/2 · Pr2/5 (2) In the formula (2), Re is Reynolds and Rr is a Prandtl number. The Prandtl number Pr is the physical property of the air under temperature, and the Prandtl number is Pr = 0.71. Reynolds Re can be expressed by the following formula (3): Reynolds: Re = U · L/v... (3) In the formula (3), U is the flow velocity of the jet from the blowout hole, and v is at room temperature. The dynamic viscosity coefficient of the air. From Reynolds Re of equation (3), the thermal conductivity h is proportional to the square root of the flow velocity U of the jet from the blow-out orifice. The flow velocity U can be calculated from the pressure difference of the jet flow path, and the larger the pressure difference between the blow side (upstream side) of the blow hole and the side to be blown (downstream side), the larger the flow velocity U. # Therefore, by considering the distribution of the most appropriate thermal conductivity h, the optimum number of blow holes can be inferred. In the present embodiment, the cooling gas flows into the cooling gas passage space 49 from the cooling gas supply port 74 provided at the upper portion of the side wall, and then the cooling gas flows toward the lower side in the cooling gas passage space 49. Since the number of the blow holes 78 on the upper side is reduced, the cooling gas passage space 49 becomes much larger than the total opening area of the upper blow hole 78, and the fluid toward the lower side of the cooling gas is more easily maintained, and the pressure on the lower side is higher. It becomes larger than the upper side of the cooling gas passage space 49. Therefore, the collisional flow rate of the cooling gas blown out from one of the blow holes 78 on the lower side of the cooling gas passage space -22 - (20) (20) 13283391 is increased. According to the above embodiment, the following effects can be obtained. (1) The heat exchange can be efficiently performed by introducing the coldest state cooling gas into the upper portion of the heat insulating structure which is most likely to be filled with heat. (2) By flowing the cooling gas from the upper end portion of the heat insulating structure, the flow path of the cooling gas can be increased by flowing the cooling gas from the lower end portion of the heat insulating structure, so that the heat insulating structure can be effectively used. Perform heat exchange. (3) The heat of the cooling gas introduction port that introduces the cooling gas into the heating unit is intense. In particular, in order to cool the processing tube during the processing of the wafer in the processing chamber and to cool the gas, the temperature is locally lowered, which adversely affects the processing state of the wafer. Further, in the case where the cooling gas introduction port is provided in the lower portion of the heating unit, in addition to the heat dissipation due to the cooling gas introduction port, in order to prevent the influence of the opening portion and the furnace opening of the heating unit located at the lower end portion of the heating unit, Generally, heat dissipation measures for providing an insulated tube or a heat insulating plate between the boat and the sealing cover are implemented, but in spite of this, heat is dissipated. Therefore, in order to supplement the dissipated heat, excessive power is supplied to the lower portion of the heating unit. The state of the heating element, that is, the overload state, tends to become frequent, and thus it is easy to disconnect. In the present embodiment, since the cooling gas introduction port through which the cooling gas flows in the heating unit is provided at the upper end portion, the upper portion of the heat insulating structure body which is most likely to be filled with heat can be effectively cooled, and the heat generating body disposed at the lower portion can be eliminated. Overload status. (4) By dividing the cooling gas passage by a partition wall into a plurality of cooling gases
(S -23- (21) (21)1328831 體通路空間，可使隔熱構造體沿著圓周均等地冷卻。 (5 )藉由將冷卻氣體通路空間的剖面積增加爲比區隔冷 卻氣體通路的區隔壁的剖面積還要大，可使其更有效地與 隔熱構造體進行熱交換。 (6) 使吹出速度變化時，依吹出孔口徑的不同，從吹出 孔吹出的冷卻氣體會因爲與處理管衝突時的衝突噴流而導 致熱傳導率不均一，但是藉由使複數個吹出孔的口徑全部 大致相同，可容易控制冷卻效率，且不需要複雜的控制而 可有效地冷卻。 (7) 藉由使複數個吹出孔的口徑全部大致相同，複數個 吹出孔會變得容易加工，而且，藉由使吹出孔與處理管的 距離固定，可容易設定最適當的熱傳導率的分布以及最適 當的吹出孔的數量。 (8) 藉由將吹出孔至少從有會被載置於晶舟的產品晶圓 之區域的最上段大致相同的高度設至有產品晶圓之區域的 最下段，可使產品晶圓區域有效冷卻。 (9) 藉由將吹出孔設在比冷卻氣體供應口更爲下方，可 更爲均等地控制來自吹出孔的冷卻氣體的吹出量及速度。 (10) 當吹出孔的尺寸變成不同尺寸時，從吹出孔吹出 的冷卻氣體的流量會改變，以致整個處理管的冷卻不均衡 ，但是藉由使吹出孔由與隔熱構造體爲不同個體的噴嘴構 成，比起在容易因爲冷卻氣體之吹出的影響而使隔熱構造 體崩壞的部分形成吹出孔的情況，可預防流路及口徑等的 變化。(S -23- (21) (21) 1328331 The body passage space allows the thermal insulation structure to be equally cooled along the circumference. (5) By increasing the sectional area of the cooling gas passage space to the ratio of the cooling gas passage The partition wall of the partition wall is larger, which allows it to exchange heat with the heat insulating structure more effectively. (6) When the blowing speed is changed, the cooling gas blown out from the blowing hole may vary depending on the diameter of the blowing hole. When the collision with the processing tube conflicts, the thermal conductivity is not uniform. However, by making the diameters of the plurality of blowing holes substantially the same, the cooling efficiency can be easily controlled, and the complicated cooling can be performed without requiring complicated control. By making the diameters of the plurality of blowing holes substantially the same, the plurality of blowing holes can be easily processed, and by appropriately fixing the distance between the blowing holes and the processing tube, it is possible to easily set the optimum heat conductivity distribution and the most appropriate. (8) By setting the blow-out hole at least the same height from the uppermost portion of the area where the product wafer will be placed on the wafer boat to the most area of the product wafer In the segment, the product wafer area can be effectively cooled. (9) By setting the blow hole below the cooling gas supply port, the amount and speed of the cooling gas from the blow hole can be more uniformly controlled. When the size of the blow-out hole becomes different, the flow rate of the cooling gas blown out from the blow-out hole is changed, so that the cooling of the entire process tube is uneven, but the blow-out hole is constituted by a nozzle different from the heat-insulating structure. In the case where the blowing hole is formed in a portion where the heat insulating structure is likely to collapse due to the influence of the blowing of the cooling gas, it is possible to prevent a change in the flow path, the diameter, and the like.
(S -24- (22) 1328831 (11) 藉由使陶瓷製的噴嘴與隔熱構造體的發熱體安裝 溝形成同一平面，可防止發熱體由於發熱體之熱膨脹而變 形，並藉由與陶瓷製的噴嘴緩衝，可防止發熱體更進一步 _ 變形或斷線的事故。 (12) 藉由將從吹出孔吹出的冷卻氣體與處理管衝突時 的衝突噴流速度加快，使隔熱構造體的下部比上部快，即 使是由於冷卻氣體通過冷卻氣體通路而變暖的冷卻氣體， P 也可使下部側有效冷卻。 (1 3 )藉由將兩列吹出孔分別從冷卻氣體通路空間的中 心偏向於區隔壁側而配置，可在不容易冷卻的區隔壁周邊 加快冷卻氣體的流動，而可有效地使區隔壁周邊冷卻。 較佳爲，吹出孔至少在各個區隔壁附近各設置一列。 (14)藉由相對於一個冷卻氣體通路空間配置複數列吹 出孔，可將吹出孔設在更大的範圍，而可使處理室內及處 理管更均一地冷卻。 # (15)藉由將吹出孔與處理管的距離保持一定，並且使 吹出孔的口徑爲相同尺寸，可容易地調整由於衝突噴流所 產生的熱傳導率。 此外，本發明並不限定於前述實施形態，當然可在不 脫離其要旨的範圍進行各種變更。 例如，在冷卻氣體流動的方式亦可爲從隔熱構造體的 排氣孔藉由排氣裝置（鼓風爐等）強迫排氣（吸引）的方式， 或是從冷卻氣體導入口藉由供應風扇強迫供應（推入）的方 式。 -25- (23) 1328831 前述實施形態當中，已針對c V D裝置加以說明 是亦可適用於所有氧化及擴散裝置或退火裝置等的基 理裝置。 被處理基板並不限於晶圓，亦可爲光罩或印刷配 板、液晶面板、光碟及磁碟等。 ' 本申請案所揭示的發明當中代表性者如以下所述 (1) 一種隔熱構造體，是使用於縱向設置的加熱裝 B 隔熱構造體，其特徵爲： 具有形成圓筒形狀的側壁部，該側壁部是形成內 數層構造， 並且具有： 設在配置於該側壁部之複數層當中之外側的側壁 '之上部的冷卻氣體供應口； 設在配置於前述側壁部之複數層當中之內側的側 層與前述側壁外層之間的冷卻氣體通路； # 設在前述側壁內層之內側的空間：以及 爲了從前述冷卻氣體通路將冷卻氣體吹出至前述 ，而設在前述側壁內層之比前述冷卻氣體供應口更爲 的複數個吹出孔。 (2) 如前述（1)的隔熱構造體’其中，在前述側壁 與前述側壁內層之間沿著圓周方向設有複數個區隔壁 述冷卻氣體通路是由該複數個區隔壁區隔成複數個。 (3) 如前述（1)的隔熱構造體，其中’在前述側壁 與前述側壁內層之間沿著圓周方向設有複數個區隔壁 ，但 板處 線基 〇 置的 外複 外層 壁內 空間 下方 外層 ，前 外層 ，前 -26- (24) 1328831 述冷卻氣體通路是由該複數個區隔壁區隔成複數個 體通路空間，該複數個冷卻氣體通路空間的各個剖 形成爲大於前述各個區隔壁的剖面積。 (4) 如前述（2)的隔熱構造體，其中，前述吹出 前述冷卻氣體通路由前述區隔壁所區隔的複數個冷 通路空間分別各設有複數列。 (5) 如前述（1)的隔熱構造體，其中，在前述側 • 與前述側壁內層之間沿著圓周方向設有複數個區隔 述冷卻氣體通路是由該複數個區隔壁區隔成複數個 體通路空間，前述吹出孔是從前述冷卻氣體通路空 _ 周方向中央，分別偏向於形成該冷卻氣體通路空間 區隔壁之側而設置成列狀。 (6) 如前述（2)的隔熱構造體’其中’前述吹出 相對於前述冷卻氣體通路由前述區隔壁所區隔的複 卻氣體通路空間各設有兩列。 # (7)如前述（1)的隔熱構造體，其中，前述複數 孔的開口剖面積是分別由大致相同的尺寸所形成。 (8) 如前述（2)(3)的隔熱構造體’其中，前述區 在圓周方向大致均等地配置有複數個。 (9) 如前述（2)的隔熱構造體’其中’則述複數 孔是爲了避開設有前述區隔壁的位置’而在與前述 體通路相對向的位置分別設有複數個。 (10) 如前述（2)的隔熱構造體，其中’前述氣體 是爲了避開設有前述區隔壁的位置’而設在與前述 冷卻氣 面積是 孔是在 卻氣體 壁外層 壁，前 冷卻氣 間的圓 的雙方 孔是在 數個冷 個吹出 隔壁是 個吹出 冷卻氣 供應口 冷卻氣 -27- (25) 1328831 體通路相對向的位置。 (1 1)如前述（2)的隔熱構造體，其中，具有沿著前 壁內層之內周的環狀形狀的環狀部；以及設在該環狀 端部的一對供電部的發熱體是朝上下方向設有複數個 述複數個發熱體當中之相鄰的前述供電部彼此連接所 * « 的控制區是朝上下方向設有複數個，並且配置成前述 孔所吹出的冷卻氣體爲避開前述發熱體而吹出。 φ (12)如前述（11)的隔熱構造體，其中，設在前述 個控制區當中最下段之控制區的前述複數個吹出孔的 口面積，是被設定爲大於設在前述複數個控制區當中 段之控制區的前述複數個吹出孔的總開口面積。 (13) 如前述（11)的隔熱構造體，其中，該隔熱構 具有四段以上的前述複數個控制區，設在前述複數個 區當中從最下段起兩段之控制區的前述複數個吹出孔 開口面積，是被設定爲大於設在前述複數個控制區當 # 最上段起兩段之控制區的前述複數個吹出孔的總開口 〇 (14) 如前述（11)的隔熱構造體，其中，設在前述 . 個控制區當中最下段之控制區的前述吹出孔的衝突噴 ，是被設定爲大於設在前述複數個控制區當中最上段 制區的前述吹出孔的衝突噴流量。 (15) 如前述（11)的隔熱構造體，其中，該隔熱構 具有四段以上的前述複數個控制區，設在前述複數個 區當中從最下段起兩段之控制區的前述吹出孔的衝突 述側 部之 ，刖 形成 吹出 複數 總開 最上 造體 控制 的總 中從 面積 複數 流量 之控 造體 控制 噴流 -28- (26) 1328831 量，是被設定爲大於設在前述複數個控制區當中從最上段 起兩段之控制區的前述吹出孔的衝突噴流量。 (16) 如前述（1)的隔熱構造體，其中，前述吹出孔與前 述側壁內層是由不同個體的絕緣構件的中空部所形成，該 絕緣構件是被支持在前述側壁部。 (17) 如前述（1)的隔熱構造體，其中，前述吹出孔與前 述側壁內層是由不同個體的大致圓筒形狀的絕緣構件所形 B 成，該絕緣構件是被支持在大致圓形的支持孔。 (18) 如前述（16)的隔熱構造體，其中，前述絕緣構件 具有使之不會朝前述空間側移動的移動防止部。 (19) 如（16)(17)(18)的隔熱構造體，其中，前述絕緣構 件是由具有比前述側壁部之材料還高密度的材料所形成。 (20) 如前述（16)(17)(18)的隔熱構造體，其中，前述絕 緣構件是由具有比前述側壁部之材料還高硬度的材料所形 成。 # (21)如前述（16)(17)(18)的隔熱構造體，其中，前述絕 緣構件是由具有比前述側壁部之材料還高彎曲強度的材料 所形成。 (22) 如前述（16)(17)(18)的隔熱構造體，其中，前述絕 緣構件是由氧化鋁成分的含有率比前述側壁部之材料還高 的陶瓷材所形成。 (23) 如前述（1 1)的隔熱構造體，其中，前述側壁內層 在內周面於上下方向具有複數個用來收容發熱體之形成爲 圓筒形狀的安裝溝，該複數個發熱體是被設置成可分別收 -29- (27) (27)1328831 容在前述複數個安裝溝內，前述複數個絕緣構件是配置在 形成前述複數個安裝溝的內側突出部。 (24) 如前述（23)的隔熱構造體，其中，前述內側突出 部是將要配置前述絕緣構件的部位挖空至與前述安裝溝之 底面相同的面，使前述絕緣構件從前述側壁內層外周面配 置至與前述側壁內層安裝溝之底面相同的面。 (25) 如前述（1)的隔熱構造體，其中，前述冷卻氣體供 應口是在圓周方向均等地設有複數個。 (26) 如前述（1)的隔熱構造體，其中，在前述側壁部的 上端側具備有天頂部，在該天頂部設有用來從前述空間排 出前述冷卻氣體的排氣孔。 (27) 如前述（25)的隔熱構造體，其中，在前述冷卻氣 體供應口具有用來供.應前述冷卻氣體的環狀導管，在該導 管具有用來供應冷卻氣體的冷卻氣體導入口。 (28) —種加熱裝置，其特徵爲：具備前述（1)的隔熱構 造體。 (29) —種加熱系統，其特徵爲：具備與前述（28)的加 熱裝置之排氣孔連接，並且設在該排氣孔之下游側的排氣 裝置。 (30) —種基板處理裝置，其特徵爲：具備前述（28)的 加熱裝置；以及在該加熱裝置之內部處理基板的處理室。 (31) —種基板處理裝置，其特徵爲：具備前述（29)的 加熱裝置系統：以及在該加熱裝置之內部處理基板的處理 室。 -30- (28) 1328831 (3 2) —種半導體裝置的製造方法，是使用前述（3 0)的 基板處理裝置進行處理的半導體裝置的製造方法，其特徵 爲：具有由前述加熱裝置的發熱體加熱基板的步驟；以及 . 由前述排氣裝置冷卻前述加熱裝置內的步驟。 【圖式簡單說明】 第1圖是本發明之一實施形態的CVD裝置的一部分 B 切開正面圖。 第2圖是主要部的正面剖面圖。 第3圖是其平面剖面圖。 . 第4圖顯示出本發明之一實施形態的隔熱構造體的主 要部’（a)是從內側觀看的展開圖，（b)是沿著（a)之b-b線 的平面剖面圖，（c)是沿著（a)之c-c線的側窗剖面圖。 第5圖顯示出其噴嘴的部分’（a)是側面剖面圖，（b) 是沿著（a)之b-b線的平面剖面圖。 • 第6圖是噴嘴之配置的展開圖。 第7圖是說明利用衝突噴流之熱傳達率的模式圖。 【主要元件符號說明】 1 :晶圓（基板） 2 :框體 3 :待機室 10: CVD裝置（基板處理裝置） 1 1 :處理管 -31 - (29) (29)1328831 12 :外管 13 :內管 14 :處理室 1 5 :爐口 1 6 :歧管 1 7 :排氣路 1 8 :排氣管 1 9 :排氣裝置 2 0 :壓力感測器 2 1 :壓力控制器 22 :氣體導入管 23 :氣體供應裝置 24 :氣體流量控制器 2 5 :密封蓋 26 :晶舟升降器 27 :電動機 2 8 :驅動控制器 29 :電動機 30 :旋轉軸 3 1 :晶舟 32、33 :端板 34 :保持構件 35 :保持溝 36 :隔熱帽蓋部 -32 (30) (30)1328831 3 7 :下側副加熱單元 40 :加熱單元 41 :殼體 42 :隔熱構造體 43 :側壁部 44 :側壁外層 4 5 :側壁內層 46 :間隙 47 :冷卻氣體通路 4 8 :區隔壁 49 :冷卻氣體通路空間 5 0 :隔熱塊 51 :主體 51a :突出部 52 :結合雄部（凸部） 53 :結合雌部（凹部） 54 :安裝溝 55 :保持具 56 :發熱體 57 :環狀部 5 8 :供電部 59 :連接部 60 :插入溝 61 :供電端子 -33 (31) (31)1328831 62 :橋接線 63 :發熱體驅動裝置 64 :溫度控制器 6 5 :熱電稱 71 :導管 72 :冷卻氣體導入口 73 :供氣管 74 :冷卻氣體供應口 7 5 :內側空間（空間） 76 :支持孔 76a :凹面 77 :噴嘴（絕緣構件） 77a :凸面 7 8 :吹出孔 79 :切口部 8 0 :天頂壁部 8 1 :排氣孔 82 :排氣導管 90 :冷卻空氣（冷卻氣體） -34(S -24- (22) 1328831 (11) By forming the ceramic nozzle and the heating element mounting groove of the heat insulating structure in the same plane, it is possible to prevent the heating element from being deformed by the thermal expansion of the heating element, and by using ceramics The nozzle cushioning prevents the heating element from further _ deformation or disconnection. (12) The collision speed of the collision between the cooling gas blown from the blowing hole and the processing tube is increased to lower the heat insulating structure. Faster than the upper part, even if the cooling gas is warmed by the cooling gas through the cooling gas passage, P can effectively cool the lower side. (1 3) By displacing the two rows of blowing holes from the center of the cooling gas passage space, respectively Arranged on the side of the partition wall, the flow of the cooling gas can be accelerated around the partition wall which is not easily cooled, and the periphery of the partition wall can be effectively cooled. Preferably, the blow-out holes are provided at least in the vicinity of the partition walls of the respective zones. By arranging the plurality of column blowing holes with respect to one cooling gas passage space, the blowing holes can be set to a larger range, and the processing chamber and the processing tube can be more uniformly cooled. # (15) The distance between the blowing hole and the processing tube is kept constant, and the diameter of the blowing hole is the same size, and the thermal conductivity due to the conflict jet can be easily adjusted. Further, the present invention is not limited to the above embodiment, and of course, For example, the method of flowing the cooling gas may be a method of forcibly exhausting (suction) from an exhaust port of the heat insulating structure by an exhaust device (such as a blast furnace), or The cooling gas inlet port is forcibly supplied (pushed) by a supply fan. -25- (23) 1328831 In the above embodiment, the c VD device has been described as being applicable to all oxidation and diffusion devices or annealing devices. The substrate to be processed is not limited to a wafer, and may be a photomask or a printed wiring board, a liquid crystal panel, a compact disc, a magnetic disk, etc. The representative of the invention disclosed in the present application is as follows ( 1) A heat insulating structure, which is a heating device B heat insulating structure for use in a longitudinal direction, and has a side wall portion forming a cylindrical shape, the side wall The inner plurality of layers are formed, and have: a cooling gas supply port provided on an upper portion of the side wall ' disposed on the outer side of the plurality of layers of the side wall portion; and a side layer disposed on the inner side of the plurality of layers disposed on the side wall portion a cooling gas passage between the outer wall of the side wall; a space provided inside the inner layer of the side wall; and a cooling gas supply provided in the inner layer of the side wall to blow the cooling gas from the cooling gas passage to the foregoing (2) The heat insulating structure of the above (1), wherein a plurality of partition walls are provided along the circumferential direction between the side wall and the inner wall of the side wall, and the cooling gas passage is (3) The heat insulating structure according to the above (1), wherein "a plurality of partition walls are provided along the circumferential direction between the side wall and the inner wall of the side wall, but The outer layer of the outer layer of the outer layer of the outer layer of the outer layer of the outer layer of the outer layer, the front outer layer, the front -26- (24) 1328831, the cooling gas passage is divided into a plurality of partitions by the plurality of partition walls Passage space, each of the plurality of cooling gas passage cross-sectional area of space is greater than the cross-sectional area of each partition wall is formed. (4) The heat insulating structure according to the above (2), wherein the plurality of cold passage spaces in which the cooling gas passages are separated by the partition walls are provided in a plurality of rows. (5) The heat insulating structure according to (1) above, wherein the plurality of sections are provided in the circumferential direction between the side surface and the inner side wall layer, and the cooling gas passage is partitioned by the plurality of partition walls The plurality of individual passage spaces are formed in a line shape from the center in the air-to-circumferential direction of the cooling gas passage, and are biased toward the side where the partition wall of the cooling gas passage space region is formed. (6) The heat insulating structure of the above (2) wherein the said blowing is provided in two rows with respect to the cooling gas passage space partitioned by the partition wall with respect to the cooling gas passage. (7) The heat insulating structure according to (1) above, wherein the opening cross-sectional areas of the plurality of holes are each formed by substantially the same size. (8) The heat insulating structure according to (2) or (3) above, wherein the plurality of regions are arranged substantially uniformly in the circumferential direction. (9) In the heat insulating structure of the above (2), the plurality of holes are provided so as to avoid the position where the partition walls are provided, and a plurality of holes are provided at positions facing the body passages. (10) The heat insulating structure according to the above (2), wherein the gas is provided in a position to avoid the position where the partition wall is provided, and the area of the cooling gas is a hole in the outer wall of the gas wall, and the front cooling gas The two sides of the circle are in a position where a plurality of cold blown outlets are blown out of the cooling gas supply port cooling gas -27-(25) 1328831 body passage. (1) The heat insulating structure according to (2) above, wherein the annular structure having an annular shape along an inner circumference of the inner layer of the front wall; and a pair of power supply portions provided at the annular end portion The heating element is a control unit in which a plurality of the plurality of heating elements are connected to each other, and the plurality of heating elements are connected to each other. * The control area is provided in the vertical direction, and is arranged in the cooling gas blown by the holes. Blowing out to avoid the heat generating body. (1) The heat insulating structure according to the above (11), wherein a port area of the plurality of blowing holes provided in a control region of a lowermost stage among the plurality of control regions is set to be larger than a plurality of controls provided The total opening area of the plurality of blowout holes of the control zone in the middle section of the zone. (13) The heat insulating structure according to the above (11), wherein the heat insulating structure has four or more of the plurality of control regions, and the plural number of the control regions of the plurality of regions from the lowermost segment The opening area of the blowing holes is a total opening 〇 (14) which is set to be larger than the plurality of blowing holes provided in the control areas of the plurality of control areas which are the uppermost sections of the uppermost section, and the heat insulating structure of the above (11) The collision jet of the blowing hole provided in the control zone of the lowermost section among the control zones is set to be larger than the conflicting jet flow of the blowing hole provided in the uppermost zone of the plurality of control zones . (1) The heat insulating structure according to the above (11), wherein the heat insulating structure has four or more of the plurality of control zones, and the blowing of the control zone of the two sections from the lowermost section among the plurality of zones The collision of the holes is described in the side portion, and the amount of the total volume of the upper and lower body is controlled by the control of the total volume of the controlled volume control flow of the -28-(26) 1328831, which is set to be larger than the plurality of The conflicting jet flow rate of the aforementioned blowing holes of the control zones of the two sections from the uppermost section in the control zone. (16) The heat insulating structure according to the above (1), wherein the blowing hole and the side wall inner layer are formed by hollow portions of insulating members of different individuals, and the insulating member is supported by the side wall portion. (17) The heat insulating structure according to (1), wherein the blowing hole and the side wall inner layer are formed of a substantially cylindrical insulating member of a different shape, and the insulating member is supported in a substantially circular shape. Shaped support hole. (18) The heat insulating structure according to the above (16), wherein the insulating member has a movement preventing portion that does not move toward the space side. (19) The heat insulating structure according to (16), wherein the insulating member is formed of a material having a higher density than a material of the side wall portion. (20) The heat insulating structure according to the above (16), wherein the insulating member is made of a material having a higher hardness than a material of the side wall portion. The heat insulating structure according to the above (16), wherein the insulating member is formed of a material having a higher bending strength than a material of the side wall portion. (22) The heat insulating structure according to the above (16), wherein the insulating member is formed of a ceramic material having a higher content of the alumina component than the material of the side wall portion. (23) The heat insulating structure according to the above aspect, wherein the inner wall surface of the side wall has a plurality of mounting grooves formed in a cylindrical shape for accommodating the heat generating body in the vertical direction, and the plurality of heats are generated The body is provided so as to be detachable -29-(27) (27)1328831 is accommodated in the plurality of mounting grooves, and the plurality of insulating members are disposed on the inner protruding portions forming the plurality of mounting grooves. (24) The heat insulating structure according to the above aspect (23), wherein the inner protruding portion is a surface in which the insulating member is to be disposed to be hollowed out to the same surface as the bottom surface of the mounting groove, and the insulating member is formed from the inner side wall of the side wall The outer peripheral surface is disposed to the same surface as the bottom surface of the side wall inner layer mounting groove. (25) The heat insulating structure according to the above (1), wherein the cooling gas supply port is provided in plural in the circumferential direction. (26) The heat insulating structure according to the above aspect (1), wherein the upper end side of the side wall portion is provided with a sky top, and the top of the sky is provided with a vent hole for discharging the cooling gas from the space. (27) The heat insulating structure according to the above (25), wherein the cooling gas supply port has a ring-shaped duct for supplying the cooling gas, and the duct has a cooling gas inlet port for supplying a cooling gas . (28) A heating device comprising the heat insulating structure of the above (1). (29) A heating system comprising: an exhaust device connected to an exhaust hole of the heating device of (28), and provided on a downstream side of the exhaust hole. (30) A substrate processing apparatus comprising: the heating device of the above (28); and a processing chamber for processing the substrate inside the heating device. (31) A substrate processing apparatus comprising: the heating device system of (29); and a processing chamber for processing the substrate inside the heating device. -30- (28) 1328831 (3 2) A method of manufacturing a semiconductor device, which is characterized in that the semiconductor device is processed by the substrate processing device of the above (30), and has a heat generated by the heating device a step of heating the substrate; and a step of cooling the inside of the heating device by the exhaust device. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a front elevational view showing a part of a CVD apparatus according to an embodiment of the present invention. Fig. 2 is a front sectional view of the main part. Figure 3 is a plan sectional view thereof. Fig. 4 is a plan view showing the main portion '(a) of the heat insulating structure according to the embodiment of the present invention as viewed from the inside, and Fig. 4(b) is a plan sectional view taken along line bb of (a), ( c) is a side window cross-sectional view along line cc of (a). Fig. 5 shows a portion of the nozzle '(a) is a side sectional view, and (b) is a plan sectional view taken along line b-b of (a). • Figure 6 is an expanded view of the configuration of the nozzle. Figure 7 is a schematic diagram illustrating the heat transfer rate using conflict jets. [Description of main component symbols] 1 : Wafer (substrate) 2 : Frame 3 : Standby room 10 : CVD device (substrate processing device) 1 1 : Process tube - 31 - (29) (29) 13283831 12 : Outer tube 13 : Inner tube 14 : Processing chamber 1 5 : Furnace port 1 6 : Manifold 1 7 : Exhaust path 1 8 : Exhaust pipe 1 9 : Exhaust device 2 0 : Pressure sensor 2 1 : Pressure controller 22 : Gas introduction pipe 23: Gas supply device 24: Gas flow controller 2 5: Sealing cover 26: Boat lifter 27: Motor 2 8 : Drive controller 29: Motor 30: Rotary shaft 3 1 : Boats 32, 33: End plate 34: holding member 35: holding groove 36: heat insulating cap portion - 32 (30) (30) 13283831 3 7 : lower side sub heating unit 40: heating unit 41: housing 42: heat insulating structure 43: Side wall portion 44: side wall outer layer 4 5: side wall inner layer 46: gap 47: cooling gas passage 4 8 : partition wall 49: cooling gas passage space 50: heat insulating block 51: main body 51a: protruding portion 52: combined male portion ( Convex part 53 : Combined female part (recessed part) 54 : Mounting groove 55 : Holder 56 : Heating element 57 : Annular part 5 8 : Power supply part 59 : Connection part 60 : Inserting groove 61 : Power supply terminal -33 (31) (31)1 328831 62 : Bridge wiring 63 : Heating element driving device 64 : Temperature controller 6 5 : Thermoelectric weighing 71 : Conduit 72 : Cooling gas introduction port 73 : Air supply pipe 74 : Cooling gas supply port 7 5 : Inside space (space) 76 : Support hole 76a: concave surface 77: nozzle (insulating member) 77a: convex surface 7 8 : blowing hole 79: notched portion 80: zenith wall portion 8 1 : vent hole 82: exhaust duct 90: cooling air (cooling gas) - 34