KR20080091423A - Heat insulation structure, heating device, heating system, substrate processing apparatus, and manufacturing method for a semiconductor device - Google Patents

Abstract

Uniform rapid cooling of the whole of heat insulating structure and process tube is realized. The heat insulating structure is one for use in a vertically stationed heater, having a side wall part formed into cylindrical configuration, the side wall part structured so as to have multiple layers inside and outside, which heat insulating structure comprises a cooling gas supply port disposed in a superior area of a side wall outer layer laid in an outer side of the multiple layers of the side wall part; a cooling gas pathway interposed between the side wall outer layer and a side wall inner layer laid in an inner side of the multiple layers of the side wall part; a space provided inside the side wall inner layer; and multiple blowout holes disposed in a portion of the side wall inner layer inferior to the cooling gas supply port so as to blow out cooling gas from the cooling gas pathway into the space.

Description

Heat insulation structure, heating device, heating system, heating system, substrate processing apparatus, and manufacturing method for a semiconductor device

TECHNICAL FIELD This invention relates to the manufacturing method of a heat insulation structure, a heating apparatus, a heating system, a substrate processing apparatus, and a semiconductor device.

Specifically, the present invention relates to a quenching technique.

The present invention relates to, for example, what is effective for use in a heat treatment apparatus such as a CVD apparatus, a diffusion apparatus, an oxidizing apparatus, and an annealing apparatus, which is used in a method for manufacturing a semiconductor integrated circuit device (hereinafter referred to as IC). will be.

In the method of manufacturing an IC, a CVD film such as silicon nitride (Si ₃ N ₄ ), silicon oxide, and polysilicon is formed on a semiconductor wafer (hereinafter referred to as a wafer) for making an integrated circuit including a semiconductor device. Vertical hot wall pressure reducing CVD apparatuses are widely used.

A batch vertical hotwall type pressure reducing CVD apparatus (hereinafter referred to as a CVD apparatus) includes a process tube installed vertically by consisting of an inner tube into which a wafer is carried in and an outer tube surrounding the inner tube; A gas supply pipe for supplying the deposition gas as a process gas to the process chamber formed by the process tube, an exhaust pipe for evacuating the process chamber, a heater unit attached to the outside of the process tube to heat the process chamber, and a furnace for the process chamber A seal cap which opens and closes the opening and closing, and a boat which is vertically provided on the seal cap, hold a plurality of wafers.

The film forming gas is supplied from the gas supply pipe to the processing chamber in a state in which a plurality of wafers are loaded from the furnace port at the lower end of the processing chamber while the wafers are aligned and held vertically by the boat, and the furnace ports are blocked by the seal cap. At the same time, the process chamber is heated by the heater unit, whereby a CVD film is deposited on the wafer.

Conventionally, as such a CVD apparatus, a cooling air passage for circulating cooling air in a space between a heater unit and a process tube is formed so as to surround the process tube as a whole, and the cooling is opposed to the vicinity of the furnace port of the process tube. An air supply duct is connected to the lower end of the air passage. (Patent Document 1; Japanese Patent Laid-Open No. 2005-183823)

However, in the CVD apparatus in which the air supply duct is connected to the lower end of the cooling air passage, the cooling air introduced into the cooling air passage from the air supply duct raises the cooling air passage while absorbing the heat of the heater unit and the process tube. In the upper portion of the cooling effect is not sufficiently achieved.

As a result, since the temperature gradient between the upper and lower process tubes becomes sharp, the time until the temperature of the process tube reaches the desired value becomes long.

In addition, when the temperature gradient between the upper and lower process tubes becomes sharp, the difference between the temperature history of the wafer held at the top of the boat and the temperature history of the wafer held at the bottom of the boat becomes large, so that the film quality of the processed wafer held at the top of the boat is increased. And film quality of the processed wafer held at the bottom of the boat.

SUMMARY OF THE INVENTION An object of the present invention is to solve such a problem, and to provide a heat insulating structure, a heating device, a heating system, a substrate processing apparatus, and a manufacturing method of a semiconductor device capable of uniformly quenching the heat insulating structure or the entire process tube. have.

Typical examples of the means for solving the above problems are as follows.

In the heat insulation structure used for the vertically installed heating apparatus,

It has a side wall part formed in the cylindrical shape, The said side wall part is formed in internal and external multiple layer structure,

A cooling gas supply port provided at an upper portion of the sidewall outer layer disposed outside the plurality of layers of the sidewall portion;

A cooling gas passage provided between the side wall inner layer and the side wall outer layer disposed inside of the plurality of layers of the side wall portion;

A space provided inside the sidewall inner layer,

A plurality of blowout holes provided below the cooling gas supply port of the sidewall inner layer so that cooling gas is blown out of the cooling gas passage into the space;

Insulation structure having.

1 is a partial cutaway front view of a CVD apparatus according to one embodiment of the present invention.

2 is a front sectional view showing a main portion.

3 is a cross-sectional view of the dog.

4: shows the principal part of the heat insulation structure which is one Embodiment of this invention, (a) is an expanded view seen from the inside, (b) is a planar cross section along the bb line of (a), (c) is (a) Side cross-sectional view along the cc line of.

FIG. 5: shows the part of the same nozzle, (a) is lateral sectional drawing, (b) is sectional sectional drawing along the b-b line of (a).

6 is a developed view showing the arrangement of the nozzle.

It is a schematic diagram explaining the heat transfer rate by shock collision classification.

[Description of the code]

1 wafer (substrate) 2 ore body

3: waiting room 10: CVD apparatus (substrate processing apparatus)

11: process tube 12: outer tube

13: inner tube 14: treatment chamber

15: old ball 16: manifold

17: exhaust path 18: exhaust pipe

19: exhaust device 20: pressure sensor

21 pressure controller 22 gas introduction pipe

23: gas supply device 24: gas flow controller

25: seal cap 26: boat elevator

27: motor 28: drive controller

29: motor 30: rotating shaft

31: boat 32, 33: single plate

34: holding member 35: holding member

36: heat insulation cap portion 37: lower sub heater unit

40: heater unit 41: case

42: heat insulation structure 43: side wall portion

44 side wall outer layer 45 side wall inner layer

46: interval 47: cooling gas passage

48 partition wall 49 cooling gas passage space

50: insulation block 51: main body

51a: protrusion

52: Yeongbuungbu, Cheolbu

53: joiner part, main part

54: mounting hole 55: pussy

56: heating element 57: annular portion

58: power supply 59: connection

60: insertion hole 61: feed terminal

62: conductor wire 63: heating element structure device

64: temperature controller 65: thermocouple

71: duct 72: cooling gas inlet

73: supply pipe 74: cooling gas supply port

75: inner space (space) 76: support hole (æ�� 持 孔)

76a: concave surface 77: nozzle (insulating member)

77a: iron surface 78: blowout

79: notch part 80: ceiling wall part

81: exhaust hole 82: exhaust duct

90: cooling air (cooling gas)

EMBODIMENT OF THE INVENTION Hereinafter, one Embodiment of this invention is described based on drawing.

In this embodiment, as shown to FIG. 1 and FIG. 2, the substrate processing apparatus which concerns on this invention is a CVD apparatus (batch-type vertical hotwall type pressure reduction CVD apparatus) which performs a film-forming process in the IC manufacturing method ( 10).

The CVD apparatus 10 shown in FIG. 1 and FIG. 2 has a vertical process tube 11 which is vertically arranged and supported so that the center line is vertical, and the process tube 11 is an outer tube arranged concentrically with each other. 12) and an inner tube (13).

The outer tube 12 is made of quartz (SiO ₂ ), and is integrally formed into a cylindrical shape in which an upper end is closed and an lower end is opened.

The inner tube 13 is formed in the cylindrical shape which opened the upper and lower ends. The hollow part of the inner tube 13 forms the process chamber 14 into which the boat mentioned later is carried in, and the lower opening of the inner tube 13 comprises the furnace port 15 for entering and leaving a boat.

As will be described later, the boat is configured to hold a plurality of wafers in a long aligned state. Therefore, the inner diameter of the inner tube 13 is set to be larger than the maximum outer diameter (for example, 300 mm in diameter) of the wafer to be handled.

The lower end portion between the outer tube 12 and the inner tube 13 is hermetically sealed by a manifold 16 constructed in a cylindrical shape. In order to replace the outer tube 12 and the inner tube 13, the manifold 16 is detachably attached to the outer tube 12 and the inner tube 13, respectively.

By the manifold 16 being supported by the housing 2 of the CVD apparatus, the process tube 11 is in a vertically installed state.

By the space | interval of the outer tube 12 and the inner tube 13, the exhaust path 17 is comprised by the circular ring shape which cross-sectional shape is constant width.

As shown in FIG. 1, one end of the exhaust pipe 18 is connected to an upper portion of the side wall of the manifold 16, and the exhaust pipe 18 is in a state passing through the lowermost end of the exhaust path 17.

An exhaust device 19 controlled by the pressure controller 21 is connected to the other end of the exhaust pipe 18, and a pressure sensor 20 is connected in the middle of the exhaust pipe 18.

The pressure controller 21 is configured to feedback control the exhaust device 19 based on the measurement result from the pressure sensor 20.

Below the manifold 16, the gas introduction pipe 22 is arranged to communicate with the furnace port 15 of the inner tube 13. The gas introduction pipe 22 is provided with a source gas supply device and an inert gas supply device (hereinafter, 23 is connected to a gas supply device. The gas supply device 23 is configured to be controlled by the gas flow controller 24.

The gas introduced into the furnace port 15 from the gas introduction pipe 22 flows through the process chamber 14 of the inner tube 13 and is exhausted by the exhaust pipe 18 through the exhaust path 17.

In the manifold 16, the seal cap 25 which closes the lower end opening is in contact with the lower side in the vertical direction. The seal cap 25 is constructed in a disk shape substantially the same as the outer diameter of the manifold 16, and is configured to be elevated in the vertical direction by a boat elevator 26 provided in the waiting room 3 of the housing 2.

The boat elevator 26 is comprised by the feed screw shaft apparatus of a motor drive, bellows, etc., and the motor 27 of the boat elevator 26 is comprised so that it may be controlled by the drive controller 28. FIG.

The rotating shaft 30 is arrange | positioned on the center line of the seal cap 25, and is rotatably supported, and the rotating shaft 30 is comprised so that rotation drive may be carried out by the motor 29 controlled by the drive controller 28. As shown in FIG.

The boat 31 is vertically supported by the upper end of the rotating shaft 30.

The boat 31 is provided with a pair of end plates 32 and 33 up and down, and three holding members 34 vertically interposed therebetween, and three holding members ( 34, a plurality of holding tools 35 are dug at equal intervals in the longitudinal direction. In the three holding members 34, the holding tools 35, 35, and 35 which are dug at the same stage are opened to face each other.

In the boat 31, the wafer 1 is inserted between the holding holes 35 of the same stage of the three holding members 34, so that the plurality of wafers 1 are horizontally aligned with each other. It is supposed to be aligned.

The heat insulation cap part 36 is arrange | positioned between the boat 31 and the rotating shaft 30. As shown in FIG.

The rotating shaft 30 is comprised so that the lower end of the boat 31 may be separated by the suitable distance from the position of the furnace port 15 by supporting the boat 31 in the state which lifted the seal cap 25 from the upper surface. The heat insulating cap 36 is configured to insulate the vicinity of the furnace port 15.

On the outer side of the process tube 11, the heater unit 40 as a vertically provided heating apparatus is arranged concentrically and is installed in the state supported by the housing 2.

The heater unit 40 is provided with the case 41. The case 41 is made of stainless steel (SUS) to be closed at the top and formed into a cylindrical shape, preferably a cylindrical shape, of the lower opening. The inner diameter and the full length of the case 41 are set larger than the outer diameter and the full length of the outer tube 12.

In the case 41, the heat insulation structure 42 which is one Embodiment of this invention is provided.

The heat insulation structure 42 which concerns on this embodiment is formed in cylindrical shape, Preferably cylindrical shape, The side wall part 43 of this cylindrical body is formed in the double layer structure inside and outside. That is, the heat insulation structure 42 is equipped with the side wall outer layer 44 arrange | positioned at the outer side of the side wall part 43, and the side wall inner layer 45 arrange | positioned at the inner side of the side wall part 43. As shown in FIG.

As shown in FIG. 3, the outer diameter of the side wall outer layer 44 which is a cylindrical body is set smaller than the inner diameter of the case 41. As shown in FIG. A gap 46 is formed between each outer circumference between the outer circumferential surface of the side wall outer layer 44 and the inner circumferential surface of the case 41.

The inner diameter of the side wall outer layer 44 is set to be larger than the outer diameter of the side wall inner layer 45 which is a cylindrical body, and the cooling gas passage is formed between the inner circumferential surface of the side wall outer layer 44 and the outer circumferential surface of the side wall inner layer 45. 47 is formed.

On the inner circumferential surface of the side wall outer layer 44, a plurality of partition walls 48 (12 in FIG. 3) are arranged at equal intervals along the circumferential direction of the side wall outer layer 44 so as to reach from the upper end to the lower end. Each partition wall 48 protrudes in the radially inner side of the side wall outer layer 44, and the front end surface is in contact with the outer peripheral surface of the side wall inner layer 45. As shown in FIG. Accordingly, the cooling gas passage 47 is divided into a plurality of spaces (12 spaces in FIG. 3) by the plurality of partition walls 48, and each of the cooling gas passages 47 forms a cooling gas passage space 49. The horizontal flow path cross-sectional area of the plurality of cooling gas passage spaces 49 is formed larger than the cross-sectional areas of the plurality of partition walls 48 in the horizontal direction, respectively.

The side wall inner layer 45 is constructed as one cylindrical body by stacking a plurality of insulating blocks 50 in the vertical direction.

The heat insulating block 50 is formed in a donut shape as a short hollow cylindrical shape. The insulating block 50 is preferably made of a fibrous or spherical alumina, silica or the like. For example, a heat insulating material which also functions as an insulating material is used, and is integrally formed by a vacuum form method.

On the inner circumferential side of the lower end of the heat insulating block 50, the engaging male portion (convex portion) 52 is formed in a state in which a part of the inner circumference of the heat insulating block 50 is cut into a circular ring shape. Moreover, on the outer periphery side of the upper end part of the heat insulation block 50, the joiner part (the recessed part) 53 is formed in the state which a part of outer periphery of the heat insulation block 50 was cut out in circular ring shape.

On the inner periphery side of the upper end part of the heat insulation block 50, the protrusion part 51a which protrudes in an inner direction is formed.

The coupling male portion 52 of one insulating block 50 and the coupler portion 53 of the other insulating block 50 are joined by overlapping up and down. Accordingly, between the protrusions 51a of the upper and lower insulating blocks 50 which are adjacent to each other, the mounting holes 54 for attaching the heating element are formed so that the inner circumferential surface of the side wall inner layer 45 is cut into a circular ring shape. , A certain depth is formed to a certain height. The mounting holes 54 correspond to each of the insulating blocks 50 one by one, and have one closed circular shape.

As shown in FIG.4 (b), the clasp-shaped holding | gripping tool 55 is attached to the inner peripheral surface of the mounting opening 54 at equal intervals in the circumferential direction. The position of the heat generating body 56 is determined and hold | maintained by this some holding | gripping tool 55. As shown in FIG.

The mounting hole 54 is formed so that its width becomes gradually narrower as the width of the up-down direction approaches the outer diameter direction (direction opposite to the center of the cylinder) of the cylindrical side wall inner layer 45, that is, the globule 54a. have.

That is, the taper surfaces 54b and 54c are formed in the side walls of the protrusion part 51a located above and below the mounting opening 54, ie, a pair of side walls, and both taper surfaces 54b and The distance between the 54c is smaller as it approaches the mechanism 54a of the mounting opening 54.

The heat generating element 56 may be any material as long as it is a heat generating material. Preferably, a resistive heat generating material such as a Fe—Cr—Al alloy or MOSi ₂ and SiC is preferably used.

As shown in Fig. 4A, the heat generating element 56 is formed in a flat plate shape having a rectangular cross section, and has an upper wave portion 56a, an upper gap 56c, and a lower wave portion 56b. Lower space | intervals 56d are alternately formed, respectively, and are wavy. These are integrally formed by press working, laser cutting, or the like.

The heat generating body 56 is provided in an annular shape, ie, circular ring shape, along the inner circumference of the heat insulation block 50.

The outer ring-shaped outer diameter formed by the heating element 56 is slightly smaller than the inner diameter (diameter of the inner circumferential surface) of the mounting opening 54. Moreover, the inner diameter of the circular ring shape which the heat generating body 56 forms is slightly larger than the inner diameter of the protrusion part 51a.

On the other hand, the heat generating body 56 is arrange | positioned so that the length side of the cross section of the mounting opening 54 and the heat generating body 56 may become parallel.

By the above structure, the annular part 57 of the heat generating body 56 which has a circular ring shape is formed.

The annular part 57 of the heat generating body 56 is provided for every mounting hole 54 of the heat insulation block 50.

That is, the annular part 57 is provided in isolation | separation from the annular part 57 of the other heat generating body 56 which adjoins up and down by the protrusion part 51a.

As shown in Fig. 4 (a) and (b), the plurality of holding tools 55 and 55 are disposed so as to extend from the lower end of the upper gap 56c to the upper end of the lower gap 56d, respectively. The predetermined length is inserted into the insulating block 50 from the sphere 54. Thus, the heat generating body 56 is hold | maintained in the state separated from the inner peripheral surface of the mounting opening 54.

As shown in Figs. 3 and 4, a pair of feed sections 58, 58 are bent toward the radially outward at right angles to the circumferential direction of the circular ring shape at both ends of the annular portion 57, respectively. Formed.

At the distal end of the pair of feed sections 58 and 58, the extending direction of the feed sections 58 and 58 and the pair of connecting sections 59 and 59 are opposite to each other. Are bent at right angles, respectively.

A pair of insertion openings 60 and 60 are formed in the heat insulation block 50 corresponding to the pair of power supply units 58 and 58, respectively. Both insertion holes 60 and 60 are formed so as to reach over the outer peripheral surface of the heat insulation block 50 in the radial direction from the inner peripheral surface of the mounting hole 54.

Both feed portions 58 and 58 are inserted into both insertion holes 60 and 60, respectively.

The power supply terminal 61 is welded to one of the connecting portions 59 and 59 of the upper pair, and the upper end of the conducting wire 62 is welded to the other connecting portion 59. It is. The lower end part of the conducting wire 62 is connected to the one connecting part 59 of the immediately lower end adjacent.

As shown in FIG. 1, the heat generator 56 is connected to the heat generator drive device 63, and the heat generator drive device 63 is configured to be controlled by the temperature controller 64.

In the side wall part of the heater unit 40, the thermocouple 65 which measures the temperature of the process chamber 14 is arrange | positioned at intervals in the vertical direction, and is inserted in the radial direction, respectively. Each thermocouple 65 transmits a measurement result to the temperature controller 64, respectively.

The temperature controller 64 is configured to feedback control the heating element drive device 63 by the measurement temperature from the thermocouple 65.

In addition, the temperature controller 64 constitutes one control zone with the plurality of heating elements 56 as one control range, and the control zone constitutes a plurality of control zones, for example, four control zones. Is connected.

As shown in FIG. 2, the duct 71 is annularly piped to the upper portion of the case 41, that is, the outer peripheral surface of the upper end. A cooling gas inlet 72 for supplying cooling gas is opened on the outer circumferential surface of the duct 71, and an air supply pipe 73 for supplying cooling gas is connected to the cooling gas inlet 72.

In the position which opposes the duct 71 of the side wall outer layer 44, the plurality of cooling gas supply ports 74 are arrange | positioned equally in the circumferential direction, and are provided. The plurality of cooling gas supply ports 74 are disposed at positions facing the cooling gas passage 47 so as to avoid the plurality of partition walls 48.

That is, the plurality of cooling gas supply ports 74 are disposed so as to correspond to each of the plurality of cooling gas passage spaces 49 of the cooling gas passage 47, and each of them is in communication with each other.

A space (hereinafter referred to as an inner space) 75 for installing the process tube 11 is formed inside the side wall inner layer 45.

The side wall inner layer 45 is provided with plural support holes 76 (see FIG. 5) which are opened in the circumference at a lower position than the cooling gas supply port 74. In each of the supporting holes 76, cylindrical nozzles 77 are respectively inserted as insulating members separate from the material of the side wall inner layer 45.

As shown in FIG. 5, the blowout hole 78 which blows out the cooling gas from the cooling gas passage 47 to the inner space 75 is formed by the hollow portion of the nozzle 77.

On the other hand, in the support hole 76, the recessed surface 76a is provided in the single-phase at the outer peripheral surface side of the side wall inner layer 45. Moreover, the convex surface 77a is provided in the nozzle 77 so that it may fit to the concave surface 76a. That is, the movement prevention part is provided so that the nozzle 77 may fit to the support hole 76 reliably. This prevents the nozzle 77 from moving toward the inner space 75 side as the cooling gas flows.

Preferably, if the nozzle 77 is formed of a ceramic material having a higher content of alumina components than the material of the sidewall inner layer 45, the nozzle 77 may be excellent in durability.

More preferably, the nozzle 77 may be excellent in durability if it is made of a material having a higher density than the material of the side wall inner layer 45.

Further, preferably, the nozzle 77 may be excellent in durability if it is made of a material having high hardness.

Further, preferably, the nozzle 77 may be made of a material having a higher curvature strength than the material of the side wall inner layer 45, and may be excellent in durability.

As shown in FIG. 5, Preferably, the nozzle 77 should just be arrange | positioned at the protrusion part 51a of the heat insulation block 50, respectively.

The notch part 79 is formed in the protrusion part 51a in the position which the blowout hole 78 of the nozzle 77 opposes. The cutout portion 79 is formed in a tapered shape such that the opening area gradually widens from the cooling gas passage space 49 side toward the inner space 75 side.

6 is a developed view of the thermal insulation structure 42.

As shown in FIG. 6, the nozzle 77 which forms the blowout hole 78 is arrange | positioned in the thermal form with respect to the cooling gas passage space 49, and is provided in multiple rows. The nozzles 77 are arranged in a columnar manner to each of the partition walls 48 and 48 on both sides of the cooling gas passage space 49 from the circumferential center.

The nozzles 77 are provided in two rows with respect to the cooling gas passage space 49.

The opening cross-sectional area of the blowout hole 78 of the plurality of nozzles 77 is formed in the same size.

The plurality of nozzles 77 are respectively provided at positions facing the cooling gas passages 47 so as to avoid the positions at which the partition walls 48 are provided.

The plurality of nozzles 77 are arranged so that the cooling gas blown out of the blowout holes 78 is blown out of the heating element 56.

The nozzle 77 is most arrange | positioned in the cooling gas passage space 49 of a pair of feeding part 58, 58 among the some cooling gas passage space 49 provided equally in the circumferential direction.

As shown in FIG.2 and FIG.6, in this embodiment, the upper end side of a heater unit is divided into five control zones U, CU, C, CL, L as a some control zone over the lower end side.

The blowout holes 78 of the plurality of nozzles 77 provided in the lowest control zone of the plurality of control zones than the total opening area of the blowout holes 78 of the plurality of nozzles 77 provided in the control zone at the top of the plurality of control zones. ), The total opening area is large.

In this embodiment, the total opening area of the blowout hole 78 provided in the lowest control zone L is set larger than the control zone U of the uppermost stage.

In the case where a plurality of control zones are provided in four or more stages, control of four or more stages is greater than the total opening area of the blowout holes 78 of the plurality of nozzles 77 provided in the two-stage control zone from the top of the four or more control zones. The total opening area of the multiple nozzle 77 blowout hole 78 provided in 2 control zones from the lowest end of a zone is set large.

In this embodiment, the total opening of the blowout hole 78 provided in the 4th stage control zone CL and the 5th stage control zone L rather than the 1st stage control zone U and the 2nd stage control zone CU. The area is set large.

The collision fractionation amount of the blowout holes 78 of the nozzles 77 provided in the plurality of control respecting lowermost control zones is smaller than the collision fractionation amount of the blowout holes 78 of the nozzles 77 provided in the uppermost control zones among the plurality of control zones. It is set large.

In this embodiment, the collision fractionation amount of the blowout hole 78 provided in the lowest control zone L is set larger than the control zone U of the uppermost stage.

When a plurality of control zones are provided in four or more stages, the control zone of four or more stages is larger than the collision fractionation amount of the blowout hole 78 of the nozzle 77 provided in the two-stage control zone from the uppermost stage among the four or more control zones. The collision fractionation amount of the blowout hole 78 of the nozzle 77 provided in the 2nd control zone from the lowest end among them is set large.

In the present embodiment, the ejection hole of the nozzle 77 provided in the fourth-stage control zone CL and the fifth-stage control zone L than the first-stage control zone U and the second-stage control zone CU. The collision classification amount of (78) is set large.

As shown in FIG. 2 and FIG. 6, the blowout hole 78 has a region in which the product wafer is located, at least from the same height as the top of the region AR in which the product wafer is mounted on the boat 31. It is installed to the bottom of AR).

As shown to FIG. 1 and FIG. 2, the ceiling wall part 80 as a ceiling part is covered by the upper end side of the heat insulation structure 42 side wall part 43 so that the inner space 75 may be closed.

An exhaust hole 81 is formed in the ceiling wall portion 80 as a part of an exhaust path for exhausting the atmosphere of the inner space 75, and a lower end, which is an upstream side end of the exhaust hole 81, is passed into the inner space 75. Doing.

The downstream side end of the exhaust hole 81 is connected to the exhaust duct 82.

The film formation step in the IC manufacturing method by the CVD apparatus according to the above configuration will be described.

As shown in FIG. 1, when a predetermined number of wafers 1 are loaded into the boat 31, the boat 31 holding the wafer 1 group has a seal cap 25 in the boat elevator 26. As it rises by, it is boat-loaded into the process chamber 14 of the inner tube 13.

The seal cap 25 which reached the upper limit is in the state which sealed the inside of the process tube 11 by pressure-contacting the manifold 16. As shown in FIG. The boat 31 is supported in the processing chamber 14 while being supported by the seal cap 25.

Subsequently, the inside of the process tube 11 is exhausted by the exhaust pipe 18.

In addition, by controlling the sequence by the temperature controller 64, the inside of the process tube 11 is heated to the target temperature by the side wall heating element 56.

The error between the actual rise temperature inside the process tube 11 and the sequence control target temperature of the temperature controller 64 is corrected by feedback control based on the measurement result of the thermocouple 65.

In addition, the boat 31 is rotated by the motor 29.

When the internal pressure and the temperature of the process tube 11 and the rotation of the boat 31 are generally uniformly stabilized, the raw material gas is introduced into the process chamber 14 of the process tube 11 by the gas supply device 23 by the gas supply device 23. It is introduced from (22).

The source gas introduced by the gas introduction pipe 22 flows through the process chamber 14 of the inner tube 13 and is exhausted by the exhaust pipe 18 through the exhaust path 17.

When the processing chamber 14 is distributed, a CVD film is formed on the wafer 1 by the thermal CVD reaction by contacting the wafer 1 heated to a predetermined processing temperature.

When the predetermined processing time has elapsed, after the introduction of the processing gas is stopped, a purge gas such as nitrogen gas is introduced into the process tube 11 from the gas introduction pipe 22.

At the same time, cooling air 90 as cooling gas is supplied from the air supply pipe 73 to the cooling gas inlet 72. The supplied cooling air 90 diffuses in the annular duct 71 as a whole and flows into the plurality of cooling gas passage spaces 49 of the cooling gas passage 47 from the plurality of cooling gas supply ports 74.

The cooling air 90 flowing into each cooling gas passage space 49 flows down each cooling gas passage space 49, and blows out 78 of the nozzle 77 disposed in each cooling gas passage space 49. Are taken out into the inner space 75, respectively.

The cooling air 90 blown out from the blowout hole 78 into the inner space 75 is exhausted by the exhaust hole 81 and the exhaust duct 82.

Since the whole heater unit 40 is forcibly cooled by the flow of the cooling air 90 mentioned above, the heat insulation structure 42 cools rapidly with a process tube 11 at a large rate (speed).

On the other hand, since the inner space 75 is isolated from the processing chamber 14, the cooling air 90 can be used as the cooling gas.

However, in order to further enhance the cooling effect or to prevent corrosion of the heating element under high temperature due to impurities in the air, an inert gas such as nitrogen gas may be used as the cooling gas.

When the temperature of the processing chamber 14 falls to a predetermined temperature, the boat 31 supported by the seal cap 25 is lowered by the boat elevator 26 to be unloaded from the processing chamber 14.

Subsequently, by repeating the above operation, the film formation process on the wafer 1 is performed by the CVD apparatus 10.

On the other hand, since the temperatures of the outer tube 12 and the heater unit 40 do not need to be maintained at or above the processing temperature, and are preferably lowered below the processing temperature, in the above-mentioned film forming step, the cooling air 90 The outer tube 12 and the heater unit 40 are forcibly cooled by passing through the inner space 75.

By cooling, for example, it is possible to maintain the temperature in the case where the silicon nitride film NH ₄ CI attaching the outer tube 12 so it is possible to prevent the 150 ℃.

By the way, the heat insulation structure 42 is easy to heat up an upper end side rather than a lower end side by action | action of heat retention, etc. normally. Therefore, for example, when the cooling air 90 is supplied to the lower end portion of the cooling gas passage 47, the cooling air 90 absorbs the heat of the heat insulating structure 42 and opens the cooling gas passage 47. Since it rises, the desired cooling effect is not obtained in the upper part of the heat insulation structure 42, and as a result, the cooling effect is not fully made in the upper part of the process tube 11. As shown in FIG.

In the present embodiment, since the cooling air 90 is supplied in a fresh state cooled to the upper end of the cooling gas passage 47, the cooling air 90 can cool the upper end side with the largest temperature rise. have.

Then, since each cooling gas passage space 49 of the cooling gas passage 47 descends while absorbing the heat of the heat insulation structure 42, the cooling air 90 heats up gradually and gradually cools down as it descends. The effect is small.

However, since the heat quantity accumulated as the heat insulation structure 42 approaches the lower end side is small, since the cooling effect of the cooling air 90 is small, it can cool rather uniformly throughout the heat insulation structure 42 whole.

Moreover, the cooling air 90 which flowed down each cooling gas passage space 49 of the cooling gas passage 47 while cooling the heat insulation structure 42 is the nozzle 77 arrange | positioned in each cooling gas passage space 49. The outer tube 12, i.e., the process tube 11, is taken out from the blowout hole 78 in the radial direction and collides with the surface of the outer tube 12 of the process tube 11 in a state of collision classification (see Fig. 7). ) Can be cooled uniformly throughout.

Here, the heat transfer rate due to the collision classification will be described with reference to FIG. 7.

The heat transfer rate h by the collision classification in the room temperature and the atmosphere is expressed by the following equation (1).

In formula (1),? Is a thermal conductivity of air. d is the diameter of the blowout hole 78. Nu is the Nuselt number.

Therefore, the heat transfer rate h depends on the Nusselt number Nu.

The Nusselt number Nu has a relationship as shown in the following equation (2) in the case of the relationship between the diameter d of the blowout hole and the distance L from the blowout hole to the outer tube 12.

In Equation (2), Re is Reynolds number and Pr is Prandtl number. Prandtle number Pr is a physical property value of air at room temperature, and Prandtle number Pr is 0.71.

Reynolds number Re can be represented by the following equation (3).

는 실온에서의 공기의 동점계수(動粘係數)이다.In equation (3), U is the classification flow rate from the blowout hole.

Is the kinematic coefficient of air at room temperature.

From the Reynolds number Re of equation (3), the heat transfer rate h becomes proportional to the square root of the fractional flow rate U from the blowout hole.

The flow velocity U can be calculated from the pressure difference of the trajectory of the jet, and the larger the pressure difference between the side (upstream side) where the ejection hole is taken out and the side (downstream side) taken out, the larger the flow velocity U becomes.

Therefore, the optimal number of blowout holes can be estimated by considering the distribution of the optimum heat transfer rate h.

In the present embodiment, the cooling gas flows into the cooling gas passage space 49 from the cooling gas supply port 74 provided at the upper sidewall, and then the cooling gas passage space 49 is directed downward. Flows. Since the number of the upper blowout holes 78 is small, the cooling gas passage space 49 is sufficiently larger than the total opening area of the upper blowout holes 78, so that the flow of the cooling gas toward the lower side is easy to be maintained, and the cooling The pressure of the lower side is larger than the upper side of the gas passage space 49. Therefore, the collision fractionation amount of the cooling gas taken out from the one blowout hole 78 below the cooling gas passage space 49 can be enlarged.

According to the above embodiment, the following effects can be obtained.

(1) By introducing a cooling gas in the uppermost part of the heat insulating structure in which the cooling gas in the most cooled state is most likely to retain heat, heat exchange can be performed effectively.

(2) By flowing a cooling gas from the upper end of a heat insulation structure, compared with flowing a cooling gas from the lower end part of a heat insulation structure, the flow path of a cooling gas can be lengthened and heat exchange with an heat insulation structure can be carried out effectively.

(3) Heat dissipation is intense at the cooling gas introduction port through which the cooling gas is introduced into the heater unit. In particular, when the cooling gas flows to cool the process tube while the wafer is being processed in the processing chamber, the temperature is lowered locally, which adversely affects the wafer processing state. In addition, in the case where the cooling gas inlet is provided under the heater unit, in addition to heat dissipation by the cooling gas inlet, the heat insulating cylinder is provided between the boat and the seal cap so as to prevent the influence of the opening or the furnace port of the heater unit at the lower end of the heater unit. Although the heat dissipation countermeasure which installs a heat insulation board is generally implemented, it is not enough and heat dissipation. Therefore, in order to make up for the heat dissipated, a state in which excessive power is supplied to the heating element disposed under the heater unit, that is, an overload condition frequently occurs, and thus it is easy to disconnect.

In this embodiment, since the cooling gas inlet which flows cooling gas to a heater unit is arrange | positioned at the upper end part, the upper part of the heat insulation structure which is easy to hold | maintain heat can be cooled effectively, Furthermore, the overload state of the heat generating body arrange | positioned underneath Can be solved.

(4) By partitioning the plurality of cooling gas passage spaces by the partitioning wall through the cooling gas passage, the heat insulation structure can be cooled evenly along the circumference.

(5) By making the cross-sectional area of the cooling gas passage space larger than the cross-sectional area of the partition wall partitioning the cooling gas passage, heat exchange with the heat insulating structure can be performed more effectively.

(6) If the blowout rate is changed, the thermal conductivity becomes non-uniform due to the collision classification when the cooling gas blown out of the blowout hole collides with the process tube depending on the bore size of the blowout hole. By making it the same, it becomes easy to control cooling efficiency, and it can cool effectively, without requiring complicated control.

(7) By making the diameters of the plurality of blowout holes the same, the plurality of blowout holes can be easily processed, and the distance between the blowout holes and the process tube is made constant, so that the optimal distribution of heat transfer rate and the optimal number of blowout holes can be obtained. It becomes easy to set up.

(8) The product wafer region can be effectively cooled by providing the blowout holes at least at the same height as the uppermost end of the region where the product wafer is placed on the boat, and from the lowermost end of the region where the product wafer is located.

(9) By providing the blowout hole below the cooling gas supply port, it is possible to more uniformly control the amount and speed of cooling gas blowout from the blowout hole.

(10) When the sizes of the blowout holes are different from each other, the flow rate of the cooling gas blown out of the blowout holes changes, and the cooling balance of the entire process tube is broken, but the blowout holes are constituted by nozzles separate from the heat insulating structure. As compared with the case where the blowout hole is formed in a portion where the heat insulating structure tends to collapse due to the blowout effect of the cooling gas, it is possible to prevent the flow path, the aperture, and the like from changing.

(11) By making the ceramic nozzle the same surface as the heating element mounting opening of the heat insulating structure, the heating element is deformed due to thermal expansion of the heating element, and buffering with the ceramic nozzle can prevent the heating element from further deforming or disconnecting. .

(12) The coolant gas blown out from the blowout hole speeds up the collision fractionation rate when it collides with the process tube as compared to the upper part, so that the coolant gas is effectively cooled down by the coolant gas heated by passing through the coolant gas passage. Can be cooled.

(13) By arranging two rows of blowout holes on the partition wall side rather than the center of the cooling gas passage space, the flow of the cooling gas can be increased around the partition wall that is hard to cool, and the periphery of the partition wall can be efficiently cooled. have.

Preferably, the blowout holes may be provided one row at least in the vicinity of each partition wall.

(14) By arranging multiple rows of blowout holes in one cooling gas passage space, the blowout holes can be provided more extensively, and the inside of the process chamber and the process tube can be cooled more uniformly.

(15) By keeping the distance from the blowout hole and the process tube constant, and making the diameter of the blowout hole the same size, it is possible to easily adjust the heat transfer rate due to the collision classification.

It goes without saying that the present invention is not limited to the above embodiment, and various modifications can be made without departing from the gist of the invention.

For example, the method of flowing the cooling gas may be a method of forcibly evacuating (suction) the exhaust gas from the exhaust hole of the heat insulating structure by means of an exhaust device (blower, etc.). It may be a (indentation) method.

In the above embodiment, the CVD apparatus has been described, but the present invention can be applied to an overall substrate processing apparatus such as an oxidizing, diffusing apparatus or an annealing apparatus.

The substrate to be processed is not limited to a wafer, and may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

The typical thing of the invention disclosed in this application is as follows.

(1) As a heat insulation structure used for the heating apparatus installed vertically,

It has a side wall portion formed in a cylindrical shape, the side wall portion is formed in a multi-layer structure inside and outside,

A cooling gas supply port provided at an upper portion of the sidewall outer layer disposed outside the plurality of layers of the sidewall portion;

A cooling gas passage provided between the side wall inner layer and the side wall outer layer disposed inside of the plurality of layers of the side wall portion;

A space provided inside the sidewall inner layer,

And a plurality of blowout holes provided below the cooling gas supply port of the sidewall inner layer so as to blow out the cooling gas from the cooling gas passage to the space.

(2) The heat insulation of said (1) in which the some partition wall is provided along the circumferential direction between the said side wall outer layer and the said side wall inner layer, and the said cooling gas path is divided into several by the said some partition wall. Structure.

(3) A plurality of partition walls are provided along the circumferential direction between the side wall outer layer and the side wall inner layer, and the cooling gas passage is partitioned into a plurality of cooling gas passage spaces by the plurality of partition walls, The cross-sectional area of each of the plurality of cooling gas passage spaces is formed larger than the cross-sectional area of each of the partition walls.

(4) The heat dissipation structure according to (2), wherein the blowout hole is provided in a plurality of rows in each of the plurality of cooling gas passage spaces in which the cooling gas passage is partitioned from the partition wall.

(5) A plurality of partition walls are provided along the circumferential direction between the side wall outer layer and the side wall inner layer, and the cooling gas passage is partitioned into a plurality of cooling gas passage spaces by the plurality of partition walls, The said blow-out hole is a heat insulation structure of said (1) provided in the columnar form by deviating from the circumferential center of the said cooling gas passage space to the side of both partition walls which form the said cooling gas passage space, respectively.

(6) The heat insulating structure according to (2), wherein the blowout holes are provided in two rows with respect to the plurality of cooling gas passage spaces in which the cooling gas passages are partitioned from the partition wall.

(7) The heat insulation structure of said (1) in which opening cross-sectional areas of the plurality of blowout holes are each formed in the same size.

(8) The heat insulation structure of said (2) and (3) by which the said partition wall is arrange | positioned equally in the circumferential direction.

(9) The heat insulation structure according to the above (2), wherein the plurality of blowout holes are provided in plural in positions facing the cooling gas passages, respectively, to avoid the position where the partition wall is provided.

(10) The heat insulating structure of (2), wherein the gas supply port is provided at a position opposite to the cooling gas passage so as to avoid a position at which the partition wall is installed.

(11) A plurality of heating elements each having an annular annular portion and a pair of feeders provided at an end portion of the annular portion along the inner circumference of the sidewall inner layer are provided in the vertical direction, and the power feeding portion adjacent to the plurality of heat generating elements is disposed. The heat insulation structure of said (2) arrange | positioned so that the control zone formed by mutually connecting may be provided in the up-down direction, and the cooling gas blown out by the said blowing hole may be taken out of the said heat generating body.

(12) The total opening area of the plurality of blowout holes provided in the lowermost control zone of the plurality of control zones is set larger than the total opening area of the plurality of blowout holes provided in the control zone at the top of the plurality of control zones. The heat insulation structure of said (11).

(13) It has two or more stages of the said plurality of control zones, and is two steps from the lowermost stage of the said plurality of control zones than the total opening area of the said several blowout hole provided in the control zone of the 2nd stage from the top of the said plurality of control zones. The heat insulation structure of said (11) in which the total opening area of the said some blowout hole provided in the control zone of this is set large.

(11) The collision classification amount of the blowout holes provided in the lowest control zone among the plurality of control zones is set larger than the collision classification amount of the blowout holes provided in the control zone at the top of the plurality of control zones (11). ) Insulation structure.

(15) Two-stage control of the plurality of control zones from the lowermost of the plurality of control zones than the collision classification amount of the blowout holes provided in the two-stage control zones from the top of the plurality of control zones; The heat insulation structure of said (11) in which the collision fraction of the said blowout hole provided in the zone is set large.

(16) The heat insulation structure according to (1), wherein the blowout hole is formed by a hollow portion of an insulating member that is separate from the side wall inner layer, and the insulating member is supported by the side wall portion.

(17) The heat insulation structure according to (1), wherein the blowout hole is formed by a cylindrical insulating member that is separate from the sidewall inner layer, and the insulating member is supported by a circular support hole.

(18) The heat insulation structure of said (16) which has a movement prevention part so that the said insulating member does not move to the said space side.

(19) The heat insulating structure according to the above (16), (17) and (18), wherein the insulating member is formed of a material having a higher density than the material of the side wall portion.

(20) The heat insulating structure according to the above (16), (17) and (18), wherein the insulating member is formed of a material having a hardness higher than that of the side wall portion.

(21) The heat insulating structure according to the above (16), (17) and (18), wherein the insulating member is formed of a material having a higher curvature strength than that of the side wall portion.

(22) The heat insulating structure according to the above (16), (17) and (18), wherein the insulating member is formed of a ceramic material having a higher content of alumina components than the material of the side wall portion.

(23) The side wall inner layer has a plurality of mounting holes formed in a cylindrical shape for accommodating a heating element on an inner circumferential surface in the vertical direction, and the plurality of heating elements are provided to be accommodated in the plurality of mounting holes, respectively. The heat insulation structure of said (11) arrange | positioned at the inner side protrusion part which forms the said several mounting opening.

(24) Said inner side projection part cuts out the location where the said insulating member is arrange | positioned to the same surface as the bottom face of the said mounting hole, and the said insulating member is arrange | positioned from the outer peripheral surface of the said side wall inner layer to the same surface as the bottom face of the said side wall inner layer mounting hole (23) ) Insulation structure.

(25) The heat insulation structure of said (1) in which the said cooling gas supply port is provided in multiple numbers equally in the circumferential direction.

(26) The heat insulation structure according to (1), wherein a ceiling portion is provided on an upper end side of the side wall portion, and an exhaust hole for exhausting the cooling gas from the space is provided in the ceiling portion.

(27) The heat insulation structure according to (25), having an annular duct for supplying the cooling gas to the cooling gas supply port, and having a cooling gas inlet for supplying a cooling gas to the duct.

(28) A heating apparatus comprising the heat insulating structure of (1).

(29) A heating system comprising an exhaust device connected to the exhaust hole of the heating device of (28) and provided downstream of the exhaust hole.

(30) A substrate processing apparatus comprising the heating device of (28) above and a processing chamber for processing a substrate inside the heating device.

(31) A substrate processing apparatus comprising the heating device system of (29) and a processing chamber for processing a substrate inside the heating device.

(32) A method of manufacturing a semiconductor device processed using the substrate processing apparatus of (30), wherein the heating element of the heating device heats the substrate, and the exhaust device cools the inside of the heating device. The manufacturing method of a semiconductor device.

According to the present invention, the heat insulating structure or the entire process tube can be quenched uniformly.

Claims (32)

In the heat insulation structure used for the vertically installed heating apparatus, It has a side wall portion formed in a cylindrical shape, the side wall portion is formed in a plurality of internal and external structures, A cooling gas supply port provided at an upper side of the side wall outer layer disposed outside the plurality of layers of the side wall portion; A cooling gas passage provided between the side wall inner layer and the side wall outer layer disposed inside of the plurality of layers of the side wall portion; A space provided inside the sidewall inner layer, A plurality of blowout holes provided below the cooling gas supply port of the sidewall inner layer so that cooling gas is blown out of the cooling gas passage into the space; Insulation structure comprising a. A plurality of partition walls are provided along the circumferential direction between the side wall outer layer and the side wall inner layer, and the cooling gas passage is divided into a plurality of partition walls by the plurality of partition walls. Insulation structure. A plurality of partition walls are provided along the circumferential direction between the side wall outer layer and the side wall inner layer, and the cooling gas passage is partitioned into a plurality of cooling gas passage spaces by the plurality of partition walls. The cross-sectional area of each of the plurality of cooling gas passage spaces is larger than the cross-sectional area of each of the partition walls. The heat insulating structure according to claim 2, wherein the blowout hole is provided in a plurality of rows in each of the plurality of cooling gas passage spaces in which the cooling gas passage is partitioned by the partition wall. A plurality of partition walls are provided along the circumferential direction between the side wall outer layer and the side wall inner layer, and the cooling gas passage is partitioned into a plurality of cooling gas passage spaces by the plurality of partition walls. And the blowout holes are arranged in a row shape toward the partition walls on both sides forming the cooling gas passage space from the center of the circumferential direction of the cooling gas passage space. The heat insulating structure according to claim 2, wherein the blowout holes are provided in two rows with respect to the plurality of cooling gas passage spaces in which the cooling gas passages are partitioned by the partition wall. The heat insulating structure according to claim 1, wherein the opening end areas of the plurality of blowout holes are formed in the same size, respectively. The heat insulating structure according to claim 2, wherein a plurality of partition walls are arranged evenly in the circumferential direction. 3. The heat insulation structure according to claim 2, wherein the plurality of blowout holes are provided in a plurality of positions respectively opposed to the cooling gas passages to avoid positions where the partition walls are provided. The heat insulating structure according to claim 2, wherein the gas supply port is provided at a position facing the cooling gas passage so as to avoid a position at which the partition wall is installed. 3. The heat generating element according to claim 2, wherein a plurality of heat generating elements each having an annular annular portion along an inner circumference of the inner wall of the side wall and a pair of feeders provided at an end portion of the annular portion are provided in the vertical direction. A plurality of control zones are formed so that adjacent feeders are connected to each other in the vertical direction, and the cooling gas blown out by the blowout holes is arranged to be blown out of the heating element. 12. The total opening area of the plurality of blowout holes provided in the control zone at the lowermost end of the plurality of control zones than the total opening area of the plurality of blowout holes provided in the control zone at the top of the plurality of control zones. It is largely set, The heat insulation structure characterized by the above-mentioned. 12. The lowermost of the plurality of control zones according to claim 11, wherein the plurality of control zones have four or more stages, and are smaller than the total opening area of the plurality of blowout holes provided in the two-stage control zones from the top of the plurality of control zones. The total opening area of the plurality of blowout holes provided in the two-stage control zone is set to be large. 12. The collision classification amount of the blowout holes provided in the lowest control zone among the plurality of control zones is set larger than the collision classification amount of the blowout holes provided in the control zone at the top of the plurality of control zones. Insulation structure of claim 11. 12. The method according to claim 11, wherein the plurality of control zones have four or more stages, and two of the plurality of control zones are located at the lowermost end of the plurality of control zones than the collision classification amount of the blowout holes provided in the two-stage control zones. The heat insulation structure characterized in that the collision fraction amount of the blowout hole provided in the control zone of a stage is set large. The heat insulating structure according to claim 1, wherein the blowout hole is formed by a hollow portion of an insulating member separate from the side wall inner layer, and the insulating member is supported by the side wall portion. The heat insulating structure according to claim 1, wherein the blowout hole is formed by a cylindrical insulating member that is separate from the sidewall inner layer, and the insulating member is supported by a circular support hole. The heat insulating structure according to claim 16, wherein the insulating member has a movement preventing portion so as not to move toward the space side. 17. The heat insulating structure according to claim 16, wherein said insulating member is formed of a material having a higher density than a material of said side wall portion. The heat insulating structure according to claim 16, wherein said insulating member is formed of a material having a hardness higher than that of said side wall portion. The heat insulating structure according to claim 16, wherein said insulating member is formed of a material having a higher curvature strength than that of said side wall portion. The heat insulating structure according to claim 16, wherein the insulating member is made of a ceramic material having a content of alumina component higher than that of the side wall portion. The method according to claim 11, wherein the side wall inner layer has a plurality of mounting holes formed in a cylindrical shape for accommodating the heating element on the inner circumferential direction in the vertical direction, and the plurality of heating elements are provided to be accommodated in the plurality of mounting holes, respectively. The insulating member of the structure is arrange | positioned at the inner side protrusion part which forms said several mounting opening. The said inner protrusion part cuts out the location where the said insulating member is arrange | positioned to the same surface as the bottom surface of the said mounting opening, and the said insulating member is arrange | positioned from the outer peripheral surface of the said side wall inner layer to the same surface as the bottom surface of the said side wall inner layer mounting opening. Insulation structure characterized by the above-mentioned. The heat insulating structure according to claim 1, wherein the cooling gas supply ports are provided in plural in the circumferential direction. The heat insulating structure according to claim 1, wherein a ceiling part is provided on an upper end side of the side wall portion, and the ceiling part is provided with exhaust holes for exhausting the cooling gas from the space. The heat insulating structure according to Claim 25, further comprising an annular duct for supplying the cooling gas to the cooling gas supply port, and a cooling gas inlet for supplying cooling gas to the duct. The heat insulation structure of Claim 1 was provided. The heating apparatus characterized by the above-mentioned. A heating system is provided, which is connected to the exhaust hole of the heating device according to claim 28 and is provided downstream of the exhaust hole. The substrate processing apparatus provided with the heating apparatus of Claim 28, and the process chamber which processes a board | substrate in the said heating apparatus. The substrate processing apparatus provided with the heating apparatus system of Claim 29, and the process chamber which processes a board | substrate in the said heating apparatus. 31. A method of manufacturing a semiconductor device which processes using the substrate processing apparatus according to claim 30, wherein the heating element of the heating device heats the substrate, and the exhaust device cools the inside of the heating device. A manufacturing method of a semiconductor device.

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