WO2008099449A1 - Heat insulating structure, heater, heating system, substrate processing apparatus and process for manufacturing semiconductor device - Google Patents

Heat insulating structure, heater, heating system, substrate processing apparatus and process for manufacturing semiconductor device Download PDF

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Publication number
WO2008099449A1
WO2008099449A1 PCT/JP2007/052335 JP2007052335W WO2008099449A1 WO 2008099449 A1 WO2008099449 A1 WO 2008099449A1 JP 2007052335 W JP2007052335 W JP 2007052335W WO 2008099449 A1 WO2008099449 A1 WO 2008099449A1
Authority
WO
WIPO (PCT)
Prior art keywords
side wall
heat insulating
insulating structure
cooling gas
heater
Prior art date
Application number
PCT/JP2007/052335
Other languages
French (fr)
Japanese (ja)
Inventor
Ken Kojima
Shinobu Sugiura
Original Assignee
Hitachi Kokusai Electric Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc. filed Critical Hitachi Kokusai Electric Inc.
Priority to PCT/JP2007/052335 priority Critical patent/WO2008099449A1/en
Priority to KR1020087001047A priority patent/KR100932965B1/en
Priority to JP2007553401A priority patent/JP5089401B2/en
Priority to CN2007800007193A priority patent/CN101395705B/en
Priority to TW096105963A priority patent/TWI328831B/en
Publication of WO2008099449A1 publication Critical patent/WO2008099449A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Abstract

Uniform rapid cooling of the whole of heat insulating structure and process tube is realized. The heat insulating structure is one for use in a vertically stationed heater, having a side wall part formed into cylindrical configuration, the side wall part structured so as to have multiple layers inside and outside, which heat insulating structure comprises a cooling gas supply port disposed in a superior area of a side wall outer layer laid in an outer side of the multiple layers of the side wall part; a cooling gas pathway interposed between the side wall outer layer and a side wall inner layer laid in an inner side of the multiple layers of the side wall part; a space provided inside the side wall inner layer; and multiple blowout holes disposed in a portion of the side wall inner layer inferior to the cooling gas supply port so as to blow out cooling gas from the cooling gas pathway into the space.
PCT/JP2007/052335 2007-02-09 2007-02-09 Heat insulating structure, heater, heating system, substrate processing apparatus and process for manufacturing semiconductor device WO2008099449A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/JP2007/052335 WO2008099449A1 (en) 2007-02-09 2007-02-09 Heat insulating structure, heater, heating system, substrate processing apparatus and process for manufacturing semiconductor device
KR1020087001047A KR100932965B1 (en) 2007-02-09 2007-02-09 Method of manufacturing insulation structures, heating devices, heating systems, substrate processing devices and semiconductor devices
JP2007553401A JP5089401B2 (en) 2007-02-09 2007-02-09 Thermal insulation structure, heating apparatus, heating system, substrate processing apparatus, and semiconductor device manufacturing method
CN2007800007193A CN101395705B (en) 2007-02-09 2007-02-09 Heat insulating structure, heater, substrate processing apparatus and process for manufacturing semiconductor device
TW096105963A TWI328831B (en) 2007-02-09 2007-02-16 Heat insulation structure, heating device, heating system, substrate processing apparatus, and manufacturing method for a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/052335 WO2008099449A1 (en) 2007-02-09 2007-02-09 Heat insulating structure, heater, heating system, substrate processing apparatus and process for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
WO2008099449A1 true WO2008099449A1 (en) 2008-08-21

Family

ID=39689710

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/052335 WO2008099449A1 (en) 2007-02-09 2007-02-09 Heat insulating structure, heater, heating system, substrate processing apparatus and process for manufacturing semiconductor device

Country Status (5)

Country Link
JP (1) JP5089401B2 (en)
KR (1) KR100932965B1 (en)
CN (1) CN101395705B (en)
TW (1) TWI328831B (en)
WO (1) WO2008099449A1 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056287A (en) * 2008-08-28 2010-03-11 Tokyo Ohka Kogyo Co Ltd Thermal processing apparatus
WO2011098295A1 (en) * 2010-02-15 2011-08-18 Leybold Optics Gmbh Device for thermally treating substrates
JP2012009484A (en) * 2010-06-22 2012-01-12 Hitachi Kokusai Electric Inc Heating apparatus
JP2012033871A (en) * 2010-07-09 2012-02-16 Hitachi Kokusai Electric Inc Substrate processing apparatus, method of manufacturing semiconductor device and heating apparatus
JP2012080080A (en) * 2010-09-07 2012-04-19 Tokyo Electron Ltd Vertical heat treatment apparatus and control method therefor
JP2014209569A (en) * 2013-03-25 2014-11-06 株式会社日立国際電気 Heat insulated structure and semiconductor device manufacturing method
WO2015141792A1 (en) * 2014-03-20 2015-09-24 株式会社日立国際電気 Substrate treatment device, ceiling part, and method for manufacturing semiconductor device
WO2018105113A1 (en) * 2016-12-09 2018-06-14 株式会社日立国際電気 Substrate processing device, cooling unit, and heat insulating structure
US11043402B2 (en) 2017-09-12 2021-06-22 Kokusai Electric Corporation Cooling unit, heat insulating structure, and substrate processing apparatus
CN115540341A (en) * 2022-03-12 2022-12-30 无锡恒业电热电器有限公司 High-temperature high-pressure air energy storage electric heater
CN117116814A (en) * 2023-10-23 2023-11-24 芯恺半导体设备(徐州)有限责任公司 Substrate processing apparatus

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5504793B2 (en) * 2009-09-26 2014-05-28 東京エレクトロン株式会社 Heat treatment apparatus and cooling method
KR101375742B1 (en) * 2012-12-18 2014-03-19 주식회사 유진테크 Apparatus for processing substrate
CN106756879A (en) * 2015-11-23 2017-05-31 中国科学院沈阳科学仪器股份有限公司 A kind of vacuum dry pump nitrogen heater under the harsh process environments of semiconductor
JP6735686B2 (en) * 2017-01-20 2020-08-05 東京エレクトロン株式会社 Substrate processing apparatus and substrate cooling method
JP6752851B2 (en) * 2017-09-12 2020-09-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Manufacturing methods for cooling units, substrate processing equipment, and semiconductor equipment
JP7023147B2 (en) * 2018-03-13 2022-02-21 東京エレクトロン株式会社 Insulation structure and vertical heat treatment equipment
CN110736345B (en) * 2018-07-18 2021-01-29 北京北方华创微电子装备有限公司 Process chamber and heat treatment furnace for SiC high-temperature oxidation process
JP7055075B2 (en) * 2018-07-20 2022-04-15 東京エレクトロン株式会社 Heat treatment equipment and heat treatment method
JP7262194B2 (en) * 2018-09-18 2023-04-21 東京エレクトロン株式会社 Mounting table and substrate processing device
CN111128785A (en) * 2018-10-30 2020-05-08 北京北方华创微电子装备有限公司 Heat treatment device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04369215A (en) * 1991-06-17 1992-12-22 Riken Corp Vertical-type electric furnace
JP2005183823A (en) * 2003-12-22 2005-07-07 Hitachi Kokusai Electric Inc Substrate processing equipment
JP2005286051A (en) * 2004-03-29 2005-10-13 Hitachi Kokusai Electric Inc Substrate processing equipment

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8801785U1 (en) * 1988-02-11 1988-11-10 Soehlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried, De
JP3184000B2 (en) * 1993-05-10 2001-07-09 株式会社東芝 Method and apparatus for forming thin film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04369215A (en) * 1991-06-17 1992-12-22 Riken Corp Vertical-type electric furnace
JP2005183823A (en) * 2003-12-22 2005-07-07 Hitachi Kokusai Electric Inc Substrate processing equipment
JP2005286051A (en) * 2004-03-29 2005-10-13 Hitachi Kokusai Electric Inc Substrate processing equipment

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056287A (en) * 2008-08-28 2010-03-11 Tokyo Ohka Kogyo Co Ltd Thermal processing apparatus
WO2011098295A1 (en) * 2010-02-15 2011-08-18 Leybold Optics Gmbh Device for thermally treating substrates
JP2012009484A (en) * 2010-06-22 2012-01-12 Hitachi Kokusai Electric Inc Heating apparatus
JP2012033871A (en) * 2010-07-09 2012-02-16 Hitachi Kokusai Electric Inc Substrate processing apparatus, method of manufacturing semiconductor device and heating apparatus
JP2012080080A (en) * 2010-09-07 2012-04-19 Tokyo Electron Ltd Vertical heat treatment apparatus and control method therefor
US9587884B2 (en) 2013-03-25 2017-03-07 Hitachi Kokusai Electric Inc. Insulation structure and method of manufacturing semiconductor device
JP2014209569A (en) * 2013-03-25 2014-11-06 株式会社日立国際電気 Heat insulated structure and semiconductor device manufacturing method
JPWO2015141792A1 (en) * 2014-03-20 2017-04-13 株式会社日立国際電気 Substrate processing apparatus, ceiling portion, and semiconductor device manufacturing method
WO2015141792A1 (en) * 2014-03-20 2015-09-24 株式会社日立国際電気 Substrate treatment device, ceiling part, and method for manufacturing semiconductor device
US10415136B2 (en) 2014-03-20 2019-09-17 Kokusai Electric Corporation Substrate processing apparatus including heating and cooling device, and ceiling part included in the same
WO2018105113A1 (en) * 2016-12-09 2018-06-14 株式会社日立国際電気 Substrate processing device, cooling unit, and heat insulating structure
JPWO2018105113A1 (en) * 2016-12-09 2019-10-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus, cooling unit and heat insulating structure
US11043402B2 (en) 2017-09-12 2021-06-22 Kokusai Electric Corporation Cooling unit, heat insulating structure, and substrate processing apparatus
CN115540341A (en) * 2022-03-12 2022-12-30 无锡恒业电热电器有限公司 High-temperature high-pressure air energy storage electric heater
CN115540341B (en) * 2022-03-12 2023-09-08 无锡恒业电热电器有限公司 High-temperature high-pressure air energy storage electric heater
CN117116814A (en) * 2023-10-23 2023-11-24 芯恺半导体设备(徐州)有限责任公司 Substrate processing apparatus
CN117116814B (en) * 2023-10-23 2024-04-05 芯恺半导体设备(徐州)有限责任公司 Substrate processing apparatus

Also Published As

Publication number Publication date
KR20080091423A (en) 2008-10-13
KR100932965B1 (en) 2009-12-21
CN101395705B (en) 2011-08-10
TWI328831B (en) 2010-08-11
CN101395705A (en) 2009-03-25
JP5089401B2 (en) 2012-12-05
TW200834650A (en) 2008-08-16
JPWO2008099449A1 (en) 2010-05-27

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