TWI323041B - - Google Patents
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- Publication number
- TWI323041B TWI323041B TW093117111A TW93117111A TWI323041B TW I323041 B TWI323041 B TW I323041B TW 093117111 A TW093117111 A TW 093117111A TW 93117111 A TW93117111 A TW 93117111A TW I323041 B TWI323041 B TW I323041B
- Authority
- TW
- Taiwan
- Prior art keywords
- bonding
- metal layer
- layer
- semiconductor
- convex portion
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims description 211
- 239000002184 metal Substances 0.000 claims description 211
- 239000004065 semiconductor Substances 0.000 claims description 153
- 239000000758 substrate Substances 0.000 claims description 50
- 239000013078 crystal Substances 0.000 claims description 40
- 239000010931 gold Substances 0.000 claims description 23
- 238000009792 diffusion process Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 239000009874 shenqi Substances 0.000 claims 1
- 238000005253 cladding Methods 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 244000166124 Eucalyptus globulus Species 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 210000003195 fascia Anatomy 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003201005A JP4114566B2 (ja) | 2003-07-24 | 2003-07-24 | 半導体貼り合わせ結合体及びその製造方法、並びに発光素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200505060A TW200505060A (en) | 2005-02-01 |
| TWI323041B true TWI323041B (ja) | 2010-04-01 |
Family
ID=34100470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093117111A TW200505060A (en) | 2003-07-24 | 2004-06-15 | Semiconductor-pasted bonding body and its manufacturing method, light-emitting device and its manufacturing method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4114566B2 (ja) |
| TW (1) | TW200505060A (ja) |
| WO (1) | WO2005010957A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709204A (zh) * | 2012-05-30 | 2012-10-03 | 杭州士兰明芯科技有限公司 | 一种led芯片的键合方法 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5041653B2 (ja) * | 2004-04-21 | 2012-10-03 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
| JP4933130B2 (ja) * | 2006-02-16 | 2012-05-16 | 昭和電工株式会社 | ＧａＮ系半導体発光素子およびその製造方法 |
| JP5123573B2 (ja) * | 2007-06-13 | 2013-01-23 | ローム株式会社 | 半導体発光素子およびその製造方法 |
| JP2010192701A (ja) * | 2009-02-18 | 2010-09-02 | Showa Denko Kk | 発光ダイオード、発光ダイオードランプ及び発光ダイオードの製造方法 |
| JP6058897B2 (ja) * | 2012-02-21 | 2017-01-11 | スタンレー電気株式会社 | 半導体素子の製造方法 |
| US9887155B2 (en) | 2012-09-28 | 2018-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple metal layer semiconductor device and low temperature stacking method of fabricating the same |
| JP5396526B2 (ja) * | 2012-10-23 | 2014-01-22 | ローム株式会社 | 半導体発光素子 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06314644A (ja) * | 1993-04-30 | 1994-11-08 | Canon Inc | シリコン基板、シリコン基板のアライメント方法及びそれを適用した記録再生装置 |
| JPH11186120A (ja) * | 1997-12-24 | 1999-07-09 | Canon Inc | 同種あるいは異種材料基板間の密着接合法 |
| JP2002185080A (ja) * | 2000-12-15 | 2002-06-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
2003
- 2003-07-24 JP JP2003201005A patent/JP4114566B2/ja not_active Expired - Fee Related
-
2004
- 2004-06-15 TW TW093117111A patent/TW200505060A/zh not_active IP Right Cessation
- 2004-07-08 WO PCT/JP2004/009721 patent/WO2005010957A1/ja active Application Filing
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709204A (zh) * | 2012-05-30 | 2012-10-03 | 杭州士兰明芯科技有限公司 | 一种led芯片的键合方法 |
| CN102709204B (zh) * | 2012-05-30 | 2015-01-21 | 杭州士兰明芯科技有限公司 | 一种led芯片的键合方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200505060A (en) | 2005-02-01 |
| JP4114566B2 (ja) | 2008-07-09 |
| WO2005010957A1 (ja) | 2005-02-03 |
| JP2005044887A (ja) | 2005-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |