TWI342074B - - Google Patents
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- Publication number
- TWI342074B TWI342074B TW093117110A TW93117110A TWI342074B TW I342074 B TWI342074 B TW I342074B TW 093117110 A TW093117110 A TW 093117110A TW 93117110 A TW93117110 A TW 93117110A TW I342074 B TWI342074 B TW I342074B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal layer
- layer
- light
- emitting element
- reflective
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims description 266
- 239000002184 metal Substances 0.000 claims description 266
- 239000000758 substrate Substances 0.000 claims description 63
- 238000009792 diffusion process Methods 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 14
- 238000000605 extraction Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 335
- 239000013078 crystal Substances 0.000 description 31
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 238000005253 cladding Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000005275 alloying Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003200443A JP3951300B2 (ja) | 2003-07-23 | 2003-07-23 | 発光素子及び発光素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200511610A TW200511610A (en) | 2005-03-16 |
| TWI342074B true TWI342074B (ja) | 2011-05-11 |
Family
ID=34074474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093117110A TW200511610A (en) | 2003-07-23 | 2004-06-15 | Light-emitting component, and production method for light-emitting component |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3951300B2 (ja) |
| TW (1) | TW200511610A (ja) |
| WO (1) | WO2005008793A1 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060131327A (ko) * | 2005-06-16 | 2006-12-20 | 엘지전자 주식회사 | 발광 다이오드의 제조 방법 |
| JP2007103689A (ja) * | 2005-10-05 | 2007-04-19 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
| US8283683B2 (en) | 2006-11-07 | 2012-10-09 | Opto Tech Corporation | Chip-bonding light emitting diode chip |
| TWI324403B (en) * | 2006-11-07 | 2010-05-01 | Opto Tech Corp | Light emitting diode and method manufacturing the same |
| TWI370555B (en) * | 2006-12-29 | 2012-08-11 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
| JP5416363B2 (ja) * | 2008-05-01 | 2014-02-12 | 日立金属株式会社 | 半導体発光素子及びその製造方法 |
| TWI395349B (zh) * | 2009-10-20 | 2013-05-01 | Just Innovation Corp | 發光二極體晶片及其製造方法 |
| TWI405358B (zh) * | 2010-03-16 | 2013-08-11 | Just Innovation Corp | 發光二極體晶片及其製作方法 |
| KR101710359B1 (ko) * | 2010-08-20 | 2017-02-27 | 엘지이노텍 주식회사 | 발광소자 |
| JP6376430B2 (ja) * | 2013-09-04 | 2018-08-22 | 大日本印刷株式会社 | タッチパネルセンサおよびタッチ位置検出機能付き表示装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49107475A (ja) * | 1973-02-15 | 1974-10-12 | ||
| JPH084095B2 (ja) * | 1985-03-26 | 1996-01-17 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP2000294837A (ja) * | 1999-04-05 | 2000-10-20 | Stanley Electric Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
| JP4050444B2 (ja) * | 2000-05-30 | 2008-02-20 | 信越半導体株式会社 | 発光素子及びその製造方法 |
| JP4024994B2 (ja) * | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
-
2003
- 2003-07-23 JP JP2003200443A patent/JP3951300B2/ja not_active Expired - Fee Related
-
2004
- 2004-06-15 TW TW093117110A patent/TW200511610A/zh not_active IP Right Cessation
- 2004-07-08 WO PCT/JP2004/009722 patent/WO2005008793A1/ja active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005008793A1 (ja) | 2005-01-27 |
| JP2005044849A (ja) | 2005-02-17 |
| TW200511610A (en) | 2005-03-16 |
| JP3951300B2 (ja) | 2007-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |