TWI320601B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TWI320601B
TWI320601B TW095137685A TW95137685A TWI320601B TW I320601 B TWI320601 B TW I320601B TW 095137685 A TW095137685 A TW 095137685A TW 95137685 A TW95137685 A TW 95137685A TW I320601 B TWI320601 B TW I320601B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
TW095137685A
Other languages
English (en)
Other versions
TW200805650A (en
Inventor
Hatade Kazunari
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200805650A publication Critical patent/TW200805650A/zh
Application granted granted Critical
Publication of TWI320601B publication Critical patent/TWI320601B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW095137685A 2006-07-07 2006-10-13 Semiconductor device TWI320601B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006188339A JP5036234B2 (ja) 2006-07-07 2006-07-07 半導体装置

Publications (2)

Publication Number Publication Date
TW200805650A TW200805650A (en) 2008-01-16
TWI320601B true TWI320601B (en) 2010-02-11

Family

ID=38508623

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137685A TWI320601B (en) 2006-07-07 2006-10-13 Semiconductor device

Country Status (6)

Country Link
US (3) US7745906B2 (zh)
JP (1) JP5036234B2 (zh)
KR (1) KR100816409B1 (zh)
CN (1) CN100550417C (zh)
DE (1) DE102006062077B4 (zh)
TW (1) TWI320601B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192833A (ja) * 2009-02-20 2010-09-02 Panasonic Corp 半導体装置
JP2011049393A (ja) * 2009-08-27 2011-03-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
CN102263127B (zh) * 2010-05-29 2013-06-19 比亚迪股份有限公司 一种mos型功率器件及其制造方法
CN102760759B (zh) * 2011-04-29 2016-02-03 比亚迪股份有限公司 一种半导体功率器件
KR101642618B1 (ko) * 2011-09-28 2016-07-25 도요타 지도샤（주） Igbt 와 그 제조 방법
JP2014212252A (ja) * 2013-04-19 2014-11-13 株式会社東芝 半導体装置
CN104934466B (zh) * 2015-06-01 2017-12-05 南京邮电大学 一种阳极抬高的ligbt器件及制造方法
CN107170816B (zh) * 2017-05-11 2019-08-02 电子科技大学 一种横向绝缘栅双极型晶体管

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPH0783112B2 (ja) * 1985-01-17 1995-09-06 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JP2788269B2 (ja) 1988-02-08 1998-08-20 株式会社東芝 半導体装置およびその製造方法
JPH02312280A (ja) * 1989-05-26 1990-12-27 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ
KR910007160B1 (ko) 1989-07-12 1991-09-18 주식회사 선경인더스트리 방식제조성물
JP2752184B2 (ja) * 1989-09-11 1998-05-18 株式会社東芝 電力用半導体装置
JP3085037B2 (ja) 1993-08-18 2000-09-04 富士電機株式会社 絶縁ゲートバイポーラトランジスタ
JP3022598B2 (ja) 1994-03-04 2000-03-21 シーメンス アクチエンゲゼルシヤフト 高いラッチアップ耐性を備えた炭化ケイ素ベースのｍｉｓ構造
JPH08227999A (ja) * 1994-12-21 1996-09-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法
US5751024A (en) 1995-03-14 1998-05-12 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device
JP3444061B2 (ja) 1995-11-24 2003-09-08 富士電機株式会社 高耐圧横型絶縁ゲートバイポーラトランジスタ
KR100198995B1 (ko) 1996-05-30 1999-07-01 김충환 전력 스위칭 소자
JP3209091B2 (ja) * 1996-05-30 2001-09-17 富士電機株式会社 絶縁ゲートバイポーラトランジスタを備えた半導体装置
EP0860883B1 (en) 1996-09-06 2008-11-12 Mitsubishi Denki Kabushiki Kaisha Transistor and method of manufacturing the same
JPH10150193A (ja) * 1996-09-17 1998-06-02 Toshiba Corp 高耐圧半導体装置
US5869850A (en) * 1996-12-13 1999-02-09 Kabushiki Kaishia Toshiba Lateral insulated gate bipolar transistor
KR100248503B1 (ko) 1997-08-06 2000-03-15 김덕중 래치 업을 방지하는 반도체 전력소자
KR100275756B1 (ko) * 1998-08-27 2000-12-15 김덕중 트렌치 절연 게이트 바이폴라 트랜지스터
JP2000286416A (ja) * 1999-03-30 2000-10-13 Mitsubishi Electric Corp マルチチャネル絶縁ゲート型バイポーラトランジスタ
TW434900B (en) 1999-08-24 2001-05-16 Anpec Electronics Corp Insulated gate bipolar transistor with controllable latch
US6191453B1 (en) * 1999-12-13 2001-02-20 Philips Electronics North America Corporation Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology
JP2002270844A (ja) 2001-03-07 2002-09-20 Toshiba Corp 半導体装置及びその製造方法
TWI256724B (en) 2003-08-06 2006-06-11 Sanyo Electric Co Semiconductor device
KR100533687B1 (ko) 2004-02-23 2005-12-05 재단법인서울대학교산학협력재단 이중 게이트 트랜지스터

Also Published As

Publication number Publication date
US20080006906A1 (en) 2008-01-10
US8008746B2 (en) 2011-08-30
KR100816409B1 (ko) 2008-03-25
DE102006062077A1 (de) 2008-01-17
KR20070074504A (ko) 2007-07-12
DE102006062077B4 (de) 2013-11-28
US7745906B2 (en) 2010-06-29
TW200805650A (en) 2008-01-16
US7902634B2 (en) 2011-03-08
CN100550417C (zh) 2009-10-14
US20110127575A1 (en) 2011-06-02
CN101101923A (zh) 2008-01-09
US20100219447A1 (en) 2010-09-02
JP2008016731A (ja) 2008-01-24
JP5036234B2 (ja) 2012-09-26

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