IL196472A0 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- IL196472A0 IL196472A0 IL196472A IL19647209A IL196472A0 IL 196472 A0 IL196472 A0 IL 196472A0 IL 196472 A IL196472 A IL 196472A IL 19647209 A IL19647209 A IL 19647209A IL 196472 A0 IL196472 A0 IL 196472A0
- Authority
- IL
- Israel
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/041—Making n- or p-doped regions
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
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- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- H01L29/42312—Gate electrodes for field effect devices
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- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- H01L29/772—Field effect transistors
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006192440 | 2006-07-13 | ||
PCT/JP2007/063926 WO2008007748A1 (en) | 2006-07-13 | 2007-07-12 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
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IL196472A0 true IL196472A0 (en) | 2009-09-22 |
Family
ID=38923304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL196472A IL196472A0 (en) | 2006-07-13 | 2009-01-13 | Semiconductor device |
Country Status (8)
Country | Link |
---|---|
US (1) | US8362567B2 (en) |
EP (4) | EP2237314A3 (en) |
JP (4) | JPWO2008007748A1 (en) |
KR (1) | KR101377348B1 (en) |
CN (1) | CN101490823B (en) |
IL (1) | IL196472A0 (en) |
TW (2) | TWI445134B (en) |
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Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009253043A (en) * | 2008-04-07 | 2009-10-29 | Advanced Lcd Technologies Development Center Co Ltd | Method for simulation by simulator for obtaining electric characteristics of thin-film transistor disposed in crystallized region and physical analysis model for calculating and extracting coulomb scattering central density included in channel region of thin-film transistor disposed in crystallized region |
JP5299752B2 (en) * | 2008-04-28 | 2013-09-25 | 国立大学法人東北大学 | Semiconductor device |
JP5769160B2 (en) | 2008-10-30 | 2015-08-26 | 国立大学法人東北大学 | Contact forming method, semiconductor device manufacturing method, and semiconductor device |
JP5835790B2 (en) * | 2011-01-26 | 2015-12-24 | 国立大学法人東北大学 | Semiconductor device |
JPWO2013073671A1 (en) * | 2011-11-17 | 2015-04-02 | 国立大学法人東北大学 | Semiconductor device and manufacturing method thereof |
JPWO2013150571A1 (en) * | 2012-04-06 | 2015-12-14 | 国立大学法人東北大学 | Semiconductor device |
US9224734B2 (en) | 2013-09-13 | 2015-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS devices with reduced leakage and methods of forming the same |
US9209304B2 (en) * | 2014-02-13 | 2015-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | N/P MOS FinFET performance enhancement by specific orientation surface |
JP6126648B2 (en) * | 2015-06-26 | 2017-05-10 | 田中貴金属工業株式会社 | Platinum alloy target |
JP6375316B2 (en) * | 2016-01-06 | 2018-08-15 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | Semiconductor device manufacturing method and semiconductor device |
US10115728B1 (en) * | 2017-04-27 | 2018-10-30 | International Business Machines Corporation | Laser spike annealing for solid phase epitaxy and low contact resistance in an SRAM with a shared PFET and NFET trench |
CN111033721B (en) * | 2017-11-14 | 2023-10-20 | 瑞萨电子株式会社 | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers |
US10686050B2 (en) * | 2018-09-26 | 2020-06-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device and a semiconductor device |
TW202335051A (en) * | 2022-02-22 | 2023-09-01 | 美商應用材料股份有限公司 | Silicides, alloys and intermetallics to minimize resistance |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04372166A (en) | 1991-06-21 | 1992-12-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH0878685A (en) * | 1994-09-02 | 1996-03-22 | Fujitsu Ltd | Soi-mosfet and its manufacture |
JP2749030B2 (en) | 1995-05-31 | 1998-05-13 | 松下電器産業株式会社 | Field effect transistor and method of manufacturing the same |
US6413874B1 (en) * | 1997-12-26 | 2002-07-02 | Canon Kabushiki Kaisha | Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same |
US6476462B2 (en) * | 1999-12-28 | 2002-11-05 | Texas Instruments Incorporated | MOS-type semiconductor device and method for making same |
JP2002026313A (en) * | 2000-07-06 | 2002-01-25 | Hitachi Ltd | Semiconductor integrated circuit device and manufacturing method thereof |
JP4542689B2 (en) * | 2000-09-26 | 2010-09-15 | 株式会社東芝 | Manufacturing method of semiconductor device |
US6884739B2 (en) | 2002-08-15 | 2005-04-26 | Micron Technology Inc. | Lanthanide doped TiOx dielectric films by plasma oxidation |
US20040079997A1 (en) * | 2002-10-24 | 2004-04-29 | Noriyuki Miura | Semiconductor device and metal-oxide-semiconductor field-effect transistor |
JP4376505B2 (en) | 2002-10-30 | 2009-12-02 | 富士通マイクロエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
JP4954437B2 (en) * | 2003-09-12 | 2012-06-13 | 公益財団法人国際科学振興財団 | Manufacturing method of semiconductor device |
JP4694782B2 (en) | 2002-12-02 | 2011-06-08 | 財団法人国際科学振興財団 | Semiconductor device, manufacturing method thereof, and semiconductor surface processing method |
JP5046464B2 (en) * | 2002-12-18 | 2012-10-10 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor memory element |
JP2004281574A (en) * | 2003-03-13 | 2004-10-07 | Seiko Epson Corp | Semiconductor device and its fabricating method |
JP2004356114A (en) | 2003-05-26 | 2004-12-16 | Tadahiro Omi | P-channel power mis field effect transistor and switching circuit |
JP4723797B2 (en) | 2003-06-13 | 2011-07-13 | 財団法人国際科学振興財団 | CMOS transistor |
US6911383B2 (en) * | 2003-06-26 | 2005-06-28 | International Business Machines Corporation | Hybrid planar and finFET CMOS devices |
BE1015721A3 (en) | 2003-10-17 | 2005-07-05 | Imec Inter Uni Micro Electr | METHOD FOR REDUCING THE CONTACT RESISTANCE OF THE CONNECTION AREAS OF A SEMICONDUCTOR DEVICE. |
JP3910971B2 (en) * | 2004-03-26 | 2007-04-25 | 株式会社東芝 | Field effect transistor |
US7179700B2 (en) * | 2004-07-21 | 2007-02-20 | Freescale Semiconductor, Inc. | Semiconductor device with low resistance contacts |
JP2006060045A (en) | 2004-08-20 | 2006-03-02 | Toshiba Corp | Semiconductor device |
JP2006100600A (en) | 2004-09-29 | 2006-04-13 | Toshiba Corp | Semiconductor device and manufacturing method thereof |
US7235433B2 (en) * | 2004-11-01 | 2007-06-26 | Advanced Micro Devices, Inc. | Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device |
JP5170531B2 (en) * | 2005-12-02 | 2013-03-27 | 国立大学法人東北大学 | Semiconductor device |
US7863713B2 (en) | 2005-12-22 | 2011-01-04 | Tohoku University | Semiconductor device |
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2007
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Also Published As
Publication number | Publication date |
---|---|
TWI445134B (en) | 2014-07-11 |
JP2013232666A (en) | 2013-11-14 |
KR20090039758A (en) | 2009-04-22 |
JP5590362B2 (en) | 2014-09-17 |
EP2237314A3 (en) | 2011-03-16 |
US20100059830A1 (en) | 2010-03-11 |
JP5435315B2 (en) | 2014-03-05 |
CN101490823A (en) | 2009-07-22 |
WO2008007748A1 (en) | 2008-01-17 |
JP2013062514A (en) | 2013-04-04 |
EP2442357A3 (en) | 2012-07-11 |
TWI460825B (en) | 2014-11-11 |
US8362567B2 (en) | 2013-01-29 |
JPWO2008007748A1 (en) | 2009-12-10 |
EP2442363A3 (en) | 2012-07-11 |
KR101377348B1 (en) | 2014-03-25 |
JP5316962B2 (en) | 2013-10-16 |
EP2237314A2 (en) | 2010-10-06 |
EP2442357A2 (en) | 2012-04-18 |
TW200826236A (en) | 2008-06-16 |
EP2051292A4 (en) | 2009-11-18 |
EP2442363A2 (en) | 2012-04-18 |
TW201112356A (en) | 2011-04-01 |
EP2051292A1 (en) | 2009-04-22 |
JP2010287897A (en) | 2010-12-24 |
CN101490823B (en) | 2012-03-07 |
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