CN104934466B - 一种阳极抬高的ligbt器件及制造方法 - Google Patents
一种阳极抬高的ligbt器件及制造方法 Download PDFInfo
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- CN104934466B CN104934466B CN201510292293.XA CN201510292293A CN104934466B CN 104934466 B CN104934466 B CN 104934466B CN 201510292293 A CN201510292293 A CN 201510292293A CN 104934466 B CN104934466 B CN 104934466B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims abstract description 9
- 230000003139 buffering effect Effects 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510292293.XA CN104934466B (zh) | 2015-06-01 | 2015-06-01 | 一种阳极抬高的ligbt器件及制造方法 |
Applications Claiming Priority (1)
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CN201510292293.XA CN104934466B (zh) | 2015-06-01 | 2015-06-01 | 一种阳极抬高的ligbt器件及制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104934466A CN104934466A (zh) | 2015-09-23 |
CN104934466B true CN104934466B (zh) | 2017-12-05 |
Family
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CN201510292293.XA Expired - Fee Related CN104934466B (zh) | 2015-06-01 | 2015-06-01 | 一种阳极抬高的ligbt器件及制造方法 |
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CN (1) | CN104934466B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106992208B (zh) * | 2016-01-21 | 2023-05-23 | 重庆中科渝芯电子有限公司 | 一种薄硅层soi基横向绝缘栅双极型晶体管及其制造方法 |
CN105977288B (zh) * | 2016-05-11 | 2020-05-22 | 电子科技大学 | 具有超势垒集电极结构的ligbt器件及其制造方法 |
CN110504307B (zh) * | 2019-08-28 | 2023-03-14 | 重庆邮电大学 | 一种具有栅控集电极的sa-ligbt器件 |
CN111326576B (zh) * | 2020-02-14 | 2023-03-14 | 重庆邮电大学 | 一种具有纵向分离阳极的sa-ligbt器件 |
CN117410310A (zh) * | 2022-07-07 | 2024-01-16 | 电子科技大学 | 一种阳极短路横向绝缘栅双极型晶体管及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4636830A (en) * | 1984-06-04 | 1987-01-13 | General Motors Corporation | Insulated gate-controlled thyristor having shorted anode |
CN103413824A (zh) * | 2013-07-17 | 2013-11-27 | 电子科技大学 | 一种rc-ligbt器件及其制作方法 |
CN104637995A (zh) * | 2015-02-12 | 2015-05-20 | 南京邮电大学 | 一种介质隔离与结隔离相结合的ligbt器件及制作方法 |
CN204680673U (zh) * | 2015-06-01 | 2015-09-30 | 南京邮电大学 | 一种阳极抬高的ligbt器件 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5036234B2 (ja) * | 2006-07-07 | 2012-09-26 | 三菱電機株式会社 | 半導体装置 |
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2015
- 2015-06-01 CN CN201510292293.XA patent/CN104934466B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4636830A (en) * | 1984-06-04 | 1987-01-13 | General Motors Corporation | Insulated gate-controlled thyristor having shorted anode |
CN103413824A (zh) * | 2013-07-17 | 2013-11-27 | 电子科技大学 | 一种rc-ligbt器件及其制作方法 |
CN104637995A (zh) * | 2015-02-12 | 2015-05-20 | 南京邮电大学 | 一种介质隔离与结隔离相结合的ligbt器件及制作方法 |
CN204680673U (zh) * | 2015-06-01 | 2015-09-30 | 南京邮电大学 | 一种阳极抬高的ligbt器件 |
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CN104934466A (zh) | 2015-09-23 |
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Application publication date: 20150923 Assignee: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS NANTONG INSTITUTE Co.,Ltd. Assignor: NANJING University OF POSTS AND TELECOMMUNICATIONS Contract record no.: X2019980001260 Denomination of invention: LIGBT device with anode being lifted, and manufacturing method Granted publication date: 20171205 License type: Common License Record date: 20191224 |
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Assignee: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS NANTONG INSTITUTE Co.,Ltd. Assignor: NANJING University OF POSTS AND TELECOMMUNICATIONS Contract record no.: X2019980001260 Date of cancellation: 20220304 |
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