TWI317763B - Very long cylindrical sputtering target and method for manufacturing - Google Patents

Very long cylindrical sputtering target and method for manufacturing

Info

Publication number
TWI317763B
TWI317763B TW095136573A TW95136573A TWI317763B TW I317763 B TWI317763 B TW I317763B TW 095136573 A TW095136573 A TW 095136573A TW 95136573 A TW95136573 A TW 95136573A TW I317763 B TWI317763 B TW I317763B
Authority
TW
Taiwan
Prior art keywords
manufacturing
sputtering target
long cylindrical
cylindrical sputtering
long
Prior art date
Application number
TW095136573A
Other languages
English (en)
Other versions
TW200714730A (en
Inventor
R Simpson Wayne
A Scatena Ryan
r stevenson Thomas
F Guerrero Jaime
Original Assignee
Thermal Conductive Bonding Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thermal Conductive Bonding Inc filed Critical Thermal Conductive Bonding Inc
Publication of TW200714730A publication Critical patent/TW200714730A/zh
Application granted granted Critical
Publication of TWI317763B publication Critical patent/TWI317763B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW095136573A 2005-10-03 2006-10-02 Very long cylindrical sputtering target and method for manufacturing TWI317763B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72341305P 2005-10-03 2005-10-03

Publications (2)

Publication Number Publication Date
TW200714730A TW200714730A (en) 2007-04-16
TWI317763B true TWI317763B (en) 2009-12-01

Family

ID=37906771

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136573A TWI317763B (en) 2005-10-03 2006-10-02 Very long cylindrical sputtering target and method for manufacturing

Country Status (5)

Country Link
US (1) US20070074969A1 (zh)
EP (1) EP1960565A4 (zh)
KR (1) KR101456718B1 (zh)
TW (1) TWI317763B (zh)
WO (1) WO2007041425A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103403217A (zh) * 2011-03-03 2013-11-20 应用材料公司 用于形成圆筒状标靶组件的方法及装置
TWI474929B (zh) * 2012-02-08 2015-03-01 Thintech Materials Technology Co Ltd 接合式管狀濺鍍靶材及其製作方法

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US20070074970A1 (en) * 2005-09-20 2007-04-05 Cp Technologies, Inc. Device and method of manufacturing sputtering targets
US20070062804A1 (en) * 2005-09-20 2007-03-22 Cp Technologies, Inc. Device and method of manufacturing sputtering targets
US20070062803A1 (en) * 2005-09-20 2007-03-22 Cp Technologies, Inc. Device and method of manufacturing sputtering targets
US7922066B2 (en) * 2005-09-21 2011-04-12 Soleras, LTd. Method of manufacturing a rotary sputtering target using a mold
US20070134500A1 (en) * 2005-12-14 2007-06-14 Klaus Hartig Sputtering targets and methods for depositing film containing tin and niobium
DE102006009749A1 (de) * 2006-03-02 2007-09-06 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH Targetanordnung
US20080105542A1 (en) * 2006-11-08 2008-05-08 Purdy Clifford C System and method of manufacturing sputtering targets
US20080296352A1 (en) * 2007-05-30 2008-12-04 Akihiro Hosokawa Bonding method for cylindrical target
US8500972B2 (en) * 2008-04-14 2013-08-06 Angstrom Sciences, Inc. Cylindrical magnetron
JP5387118B2 (ja) 2008-06-10 2014-01-15 東ソー株式会社 円筒形スパッタリングターゲット及びその製造方法
JP5482020B2 (ja) * 2008-09-25 2014-04-23 東ソー株式会社 円筒形スパッタリングターゲット及びその製造方法
EP2384374B1 (de) 2009-01-30 2014-03-26 Praxair S.T. Technology, Inc. Rohrtarget
US8115095B2 (en) * 2009-02-20 2012-02-14 Miasole Protective layer for large-scale production of thin-film solar cells
US8110738B2 (en) 2009-02-20 2012-02-07 Miasole Protective layer for large-scale production of thin-film solar cells
US20100236920A1 (en) * 2009-03-20 2010-09-23 Applied Materials, Inc. Deposition apparatus with high temperature rotatable target and method of operating thereof
WO2010106432A2 (en) * 2009-03-20 2010-09-23 Applied Materials, Inc. Deposition apparatus with high temperature rotatable target and method of operating thereof
US7897020B2 (en) * 2009-04-13 2011-03-01 Miasole Method for alkali doping of thin film photovoltaic materials
US7785921B1 (en) 2009-04-13 2010-08-31 Miasole Barrier for doped molybdenum targets
US8134069B2 (en) 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
US9284639B2 (en) * 2009-07-30 2016-03-15 Apollo Precision Kunming Yuanhong Limited Method for alkali doping of thin film photovoltaic materials
US20110067998A1 (en) * 2009-09-20 2011-03-24 Miasole Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing
US8709335B1 (en) 2009-10-20 2014-04-29 Hanergy Holding Group Ltd. Method of making a CIG target by cold spraying
US8709548B1 (en) 2009-10-20 2014-04-29 Hanergy Holding Group Ltd. Method of making a CIG target by spray forming
KR101137912B1 (ko) * 2009-11-18 2012-05-03 삼성코닝정밀소재 주식회사 원통형 스퍼터링 타겟
US20110162696A1 (en) * 2010-01-05 2011-07-07 Miasole Photovoltaic materials with controllable zinc and sodium content and method of making thereof
CN102260847A (zh) * 2010-05-27 2011-11-30 苏州晶纯新材料有限公司 一种低熔点金属旋转靶材及生产技术
CN101892458A (zh) * 2010-06-26 2010-11-24 韶关市欧莱高新材料有限公司 筒状旋转靶材帮定材料中含导电导热弹簧
US9334563B2 (en) 2010-07-12 2016-05-10 Materion Corporation Direct cooled rotary sputtering target
RU2013103041A (ru) 2010-07-12 2014-08-20 Мэтиреон Эдвансд Мэтириэлз Текнолоджиз Энд Сервисез Инк. Узел соединения опорной трубки с вращающейся мишенью
KR101225844B1 (ko) * 2010-07-13 2013-01-23 플란제 에스이 스퍼터링용 로터리 타겟의 접합 조성물 및 이를 이용한 로터리 타겟의 접합방법
KR101266200B1 (ko) * 2010-07-13 2013-05-21 플란제 에스이 엔캡 방식의 스퍼터링용 로터리 타겟
US9169548B1 (en) 2010-10-19 2015-10-27 Apollo Precision Fujian Limited Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof
US7935558B1 (en) 2010-10-19 2011-05-03 Miasole Sodium salt containing CIG targets, methods of making and methods of use thereof
US8048707B1 (en) 2010-10-19 2011-11-01 Miasole Sulfur salt containing CIG targets, methods of making and methods of use thereof
TWI480403B (zh) * 2010-10-26 2015-04-11 Hon Hai Prec Ind Co Ltd 鍍膜裝置
KR101341705B1 (ko) * 2010-11-24 2013-12-16 플란제 에스이 스퍼터링용 로터리 타겟의 접합방법
WO2012145702A2 (en) 2011-04-21 2012-10-26 Soladigm, Inc. Lithium sputter targets
KR20140029456A (ko) * 2011-04-29 2014-03-10 프랙스에어 에스.티. 테크놀로지, 인코포레이티드 원통형 스퍼터 타깃 조립체를 형성하는 방법
KR101988391B1 (ko) 2011-06-27 2019-06-12 솔레라스 리미티드 스퍼터링 타겟
CN109097746A (zh) * 2011-06-30 2018-12-28 唯景公司 溅射靶和溅射方法
JP5813874B2 (ja) * 2011-08-25 2015-11-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スパッタリング装置およびスパッタリング方法
KR101240204B1 (ko) * 2011-12-19 2013-03-07 주식회사 나노신소재 원통형 스퍼터링 타겟의 제조방법
CN102513401A (zh) * 2011-12-21 2012-06-27 济源豫光新材料科技有限公司 一种管状靶材的粘接方法
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
CN102554149A (zh) * 2011-12-26 2012-07-11 昆山全亚冠环保科技有限公司 一种低熔点带有内衬管合金旋转靶材的连铸装置及其工艺
WO2014022288A1 (en) * 2012-08-01 2014-02-06 Materion Advanced Materials Technologies And Services Inc. Direct cooled rotary sputtering target
WO2014120485A1 (en) * 2013-02-01 2014-08-07 Applied Materials, Inc. Doped zinc target
KR101465235B1 (ko) * 2013-04-30 2014-11-25 한순석 스퍼터링용 로터리 타겟 어셈블리의 접합방법
JP5887391B1 (ja) * 2014-08-22 2016-03-16 三井金属鉱業株式会社 スパッタリングターゲット用ターゲット材の製造方法および爪部材
JP6332155B2 (ja) * 2014-08-28 2018-05-30 住友金属鉱山株式会社 円筒形スパッタリングターゲットの製造方法
JP5784849B2 (ja) * 2015-01-21 2015-09-24 三井金属鉱業株式会社 セラミックス円筒形スパッタリングターゲット材およびその製造方法
EP3254296B1 (en) * 2015-02-03 2021-04-14 Cardinal CG Company Sputtering apparatus including gas distribution system
WO2016146732A1 (en) 2015-03-18 2016-09-22 Umicore Lithium-containing transition metal oxide target
JP6341146B2 (ja) * 2015-06-17 2018-06-13 住友金属鉱山株式会社 円筒形スパッタリングターゲットの製造方法
JP6312063B2 (ja) * 2016-03-31 2018-04-18 Ｊｘ金属株式会社 ロウ材の塗布方法
CN109379895A (zh) * 2016-06-16 2019-02-22 应用材料公司 用于在真空沉积工艺中在基板上进行材料沉积的设备、用于在基板上进行溅射沉积的系统和用于制造用于在基板上进行材料沉积的设备的方法
TWI619561B (zh) * 2016-07-28 2018-04-01 Rotating target
KR101956017B1 (ko) * 2018-12-12 2019-03-08 (주)코아엔지니어링 스퍼터링용 로터리 타겟 어셈블리의 인듐 충진장치 및 충진방법
WO2020236396A1 (en) 2019-05-22 2020-11-26 Sci Engineered Materials, Inc. High efficiency rotatable sputter target
CN111304605A (zh) * 2020-03-09 2020-06-19 东莞市欧莱溅射靶材有限公司 一种ito旋转靶绑定方法
CN111408864B (zh) * 2020-04-27 2022-01-11 宁波江丰电子材料股份有限公司 一种旋转靶材的装配方法

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US7922066B2 (en) * 2005-09-21 2011-04-12 Soleras, LTd. Method of manufacturing a rotary sputtering target using a mold

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103403217A (zh) * 2011-03-03 2013-11-20 应用材料公司 用于形成圆筒状标靶组件的方法及装置
CN103403217B (zh) * 2011-03-03 2018-07-20 应用材料公司 用于形成圆筒状标靶组件的方法及装置
TWI474929B (zh) * 2012-02-08 2015-03-01 Thintech Materials Technology Co Ltd 接合式管狀濺鍍靶材及其製作方法

Also Published As

Publication number Publication date
KR20080059281A (ko) 2008-06-26
KR101456718B1 (ko) 2014-10-31
EP1960565A2 (en) 2008-08-27
EP1960565A4 (en) 2010-06-02
WO2007041425A3 (en) 2007-10-25
US20070074969A1 (en) 2007-04-05
WO2007041425A2 (en) 2007-04-12
TW200714730A (en) 2007-04-16

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