TWI317160B - - Google Patents

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Publication number
TWI317160B
TWI317160B TW095136418A TW95136418A TWI317160B TW I317160 B TWI317160 B TW I317160B TW 095136418 A TW095136418 A TW 095136418A TW 95136418 A TW95136418 A TW 95136418A TW I317160 B TWI317160 B TW I317160B
Authority
TW
Taiwan
Prior art keywords
film
substrate processing
processing method
substrate
etched
Prior art date
Application number
TW095136418A
Other languages
English (en)
Chinese (zh)
Other versions
TW200721381A (en
Inventor
Yasushi Fujii
Takayuki Toshima
Takehiko Orii
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200721381A publication Critical patent/TW200721381A/zh
Application granted granted Critical
Publication of TWI317160B publication Critical patent/TWI317160B/zh

Links

Classifications

    • H10P95/08—
    • H10P50/00—
    • H10P50/283—
    • H10P50/287—
    • H10P50/613—
    • H10P70/234—
    • H10P72/0414—
    • H10P72/0458—
    • H10P72/0468—
    • H10P95/00—
    • H10W20/076—
    • H10W20/081—
    • H10W20/085—
    • H10W20/096—
    • H10P14/6922—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW095136418A 2005-09-29 2006-09-29 Substrate processing method, control program and computer-readable storage medium TW200721381A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005285432 2005-09-29

Publications (2)

Publication Number Publication Date
TW200721381A TW200721381A (en) 2007-06-01
TWI317160B true TWI317160B (enExample) 2009-11-11

Family

ID=37678444

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136418A TW200721381A (en) 2005-09-29 2006-09-29 Substrate processing method, control program and computer-readable storage medium

Country Status (6)

Country Link
US (1) US7482281B2 (enExample)
EP (1) EP1770765B1 (enExample)
KR (1) KR101049491B1 (enExample)
CN (1) CN100517603C (enExample)
SG (1) SG131052A1 (enExample)
TW (1) TW200721381A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5019741B2 (ja) * 2005-11-30 2012-09-05 東京エレクトロン株式会社 半導体装置の製造方法および基板処理システム
KR100723889B1 (ko) 2006-06-30 2007-05-31 주식회사 하이닉스반도체 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자
JP2009065000A (ja) 2007-09-07 2009-03-26 Tokyo Electron Ltd 基板の処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
US8282984B2 (en) * 2007-12-03 2012-10-09 Tokyo Electron Limited Processing condition inspection and optimization method of damage recovery process, damage recovering system and storage medium
JP5342811B2 (ja) * 2008-06-09 2013-11-13 東京エレクトロン株式会社 半導体装置の製造方法
US8753933B2 (en) * 2008-11-19 2014-06-17 Micron Technology, Inc. Methods for forming a conductive material, methods for selectively forming a conductive material, methods for forming platinum, and methods for forming conductive structures
KR20110125651A (ko) 2009-03-10 2011-11-21 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 저 유전상수 실릴화를 위한 시클릭 아미노 화합물
JP5381388B2 (ja) * 2009-06-23 2014-01-08 東京エレクトロン株式会社 液処理装置
US20110076623A1 (en) * 2009-09-29 2011-03-31 Tokyo Electron Limited Method for reworking silicon-containing arc layers on a substrate
US7981699B2 (en) * 2009-10-22 2011-07-19 Lam Research Corporation Method for tunably repairing low-k dielectric damage
JP5424848B2 (ja) 2009-12-15 2014-02-26 株式会社東芝 半導体基板の表面処理装置及び方法
JP5782279B2 (ja) * 2011-01-20 2015-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
WO2012176060A1 (en) 2011-06-23 2012-12-27 Dynamic Micro Systems Semiconductor cleaner systems and methods
JP5917861B2 (ja) 2011-08-30 2016-05-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
US8859430B2 (en) * 2012-06-22 2014-10-14 Tokyo Electron Limited Sidewall protection of low-K material during etching and ashing
TWI581331B (zh) * 2012-07-13 2017-05-01 應用材料股份有限公司 降低多孔低ｋ膜的介電常數之方法
JP6754257B2 (ja) * 2016-09-26 2020-09-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
KR102093152B1 (ko) 2017-10-17 2020-03-25 삼성전기주식회사 엔벨로프 트래킹 전류 바이어스 회로 및 파워 증폭 장치
US12410523B1 (en) * 2024-03-29 2025-09-09 Applied Materials, Inc. Integrated low k recovery and ALD metal deposition process for advanced technology node

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05205989A (ja) * 1992-01-28 1993-08-13 Hitachi Ltd リソグラフィ法及び半導体装置の製造方法
US6270948B1 (en) * 1996-08-22 2001-08-07 Kabushiki Kaisha Toshiba Method of forming pattern
JP3403373B2 (ja) * 2000-05-26 2003-05-06 松下電器産業株式会社 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
WO2003016599A1 (en) * 2001-08-09 2003-02-27 Asahi Kasei Kabushiki Kaisha Organic semiconductor element
JP4678665B2 (ja) 2001-11-15 2011-04-27 東京エレクトロン株式会社 基板処理方法および基板処理装置
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
JP4334844B2 (ja) 2002-06-26 2009-09-30 東京エレクトロン株式会社 デバイス用溝構造体の製造方法
KR100564565B1 (ko) * 2002-11-14 2006-03-28 삼성전자주식회사 실리콘을 함유하는 폴리머 및 이를 포함하는 네가티브형레지스트 조성물과 이들을 이용한 반도체 소자의 패턴형성 방법
JP2004214388A (ja) 2002-12-27 2004-07-29 Tokyo Electron Ltd 基板処理方法
US7709371B2 (en) 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
US7179758B2 (en) 2003-09-03 2007-02-20 International Business Machines Corporation Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
CN100568457C (zh) * 2003-10-02 2009-12-09 株式会社半导体能源研究所 半导体装置的制造方法

Also Published As

Publication number Publication date
CN100517603C (zh) 2009-07-22
CN1953145A (zh) 2007-04-25
US20070077768A1 (en) 2007-04-05
KR20070036670A (ko) 2007-04-03
US7482281B2 (en) 2009-01-27
EP1770765B1 (en) 2013-03-27
EP1770765A2 (en) 2007-04-04
SG131052A1 (en) 2007-04-26
KR101049491B1 (ko) 2011-07-15
EP1770765A3 (en) 2010-11-10
TW200721381A (en) 2007-06-01

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