TWI315447B - Positive resist composition for use in thin film implantation and process for forming resist pattern - Google Patents

Positive resist composition for use in thin film implantation and process for forming resist pattern

Info

Publication number
TWI315447B
TWI315447B TW095103163A TW95103163A TWI315447B TW I315447 B TWI315447 B TW I315447B TW 095103163 A TW095103163 A TW 095103163A TW 95103163 A TW95103163 A TW 95103163A TW I315447 B TWI315447 B TW I315447B
Authority
TW
Taiwan
Prior art keywords
thin film
resist pattern
resist composition
film implantation
positive resist
Prior art date
Application number
TW095103163A
Other languages
English (en)
Other versions
TW200643618A (en
Inventor
Takako Suzuki
Ken Tanaka
Koji Yonemura
Shoichi Fujita
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200643618A publication Critical patent/TW200643618A/zh
Application granted granted Critical
Publication of TWI315447B publication Critical patent/TWI315447B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW095103163A 2005-02-02 2006-01-26 Positive resist composition for use in thin film implantation and process for forming resist pattern TWI315447B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005026265A JP4387957B2 (ja) 2005-02-02 2005-02-02 薄膜インプランテーションプロセス用ポジ型レジスト組成物およびレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200643618A TW200643618A (en) 2006-12-16
TWI315447B true TWI315447B (en) 2009-10-01

Family

ID=36777239

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095103163A TWI315447B (en) 2005-02-02 2006-01-26 Positive resist composition for use in thin film implantation and process for forming resist pattern

Country Status (6)

Country Link
US (1) US7910281B2 (zh)
JP (1) JP4387957B2 (zh)
KR (1) KR100890543B1 (zh)
CN (1) CN101198906B (zh)
TW (1) TWI315447B (zh)
WO (1) WO2006082855A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4905811B2 (ja) * 2006-08-24 2012-03-28 Ｊｓｒ株式会社 イオンインプランテーション方法及びそれに用いる感放射線性樹脂組成物
JP5377597B2 (ja) * 2011-08-22 2013-12-25 富士フイルム株式会社 レジストパターン形成方法、ナノインプリント用モールドの製造方法、及びフォトマスクの製造方法
JP7076207B2 (ja) * 2017-12-28 2022-05-27 東京応化工業株式会社 レジストパターン形成方法
CN109164685B (zh) * 2018-09-26 2022-06-28 珠海雅天科技有限公司 一种euv光刻胶及其制备方法与应用

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688628A (en) * 1993-11-11 1997-11-18 Nippon Zeon Co., Ltd. Resist composition
JPH0822965A (ja) 1994-07-05 1996-01-23 Kawasaki Steel Corp フォトレジストマスクおよび半導体装置の不純物領域形成方法
JP2942167B2 (ja) * 1994-09-02 1999-08-30 和光純薬工業株式会社 レジスト材料及びこれを用いたパターン形成方法
US5558971A (en) * 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
JP3661721B2 (ja) 1996-10-15 2005-06-22 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JPH10120629A (ja) 1996-10-21 1998-05-12 Mitsubishi Gas Chem Co Inc フェニルエステル化合物及びそれを含むフェリ誘電性液晶組成物
KR20000001331A (ko) 1998-06-10 2000-01-15 김영환 반도체 장치 제조방법
JP4013367B2 (ja) 1998-11-10 2007-11-28 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3785846B2 (ja) * 1999-02-05 2006-06-14 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP3771739B2 (ja) * 1999-03-18 2006-04-26 東京応化工業株式会社 ポジ型レジスト組成物
JP4132374B2 (ja) 1999-03-25 2008-08-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 感放射線性樹脂組成物
JP4602496B2 (ja) 1999-05-24 2010-12-22 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ポリビニルフェノール類のアセタール化物及び／又はカーボネート化物の製造方法及び感放射線性樹脂組成物
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2002341538A (ja) 2001-05-11 2002-11-27 Fuji Photo Film Co Ltd 電子線またはｘ線用ポジ型レジスト組成物
JP3894001B2 (ja) 2001-09-06 2007-03-14 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP3738420B2 (ja) * 2001-11-16 2006-01-25 東京応化工業株式会社 ポジ型ホトレジスト組成物および傾斜インプランテーションプロセス用薄膜レジストパターンの形成方法
JP2004054209A (ja) 2002-05-27 2004-02-19 Jsr Corp パターン形成方法および感放射線性樹脂組成物
JP4306314B2 (ja) 2003-04-18 2009-07-29 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4533756B2 (ja) 2005-01-07 2010-09-01 富士フイルム株式会社 イオン注入工程用ポジ型レジスト組成物及びそれを用いたイオン注入方法

Also Published As

Publication number Publication date
CN101198906A (zh) 2008-06-11
KR100890543B1 (ko) 2009-03-27
US20090029291A1 (en) 2009-01-29
JP4387957B2 (ja) 2009-12-24
WO2006082855A1 (ja) 2006-08-10
US7910281B2 (en) 2011-03-22
CN101198906B (zh) 2011-08-24
KR20070093457A (ko) 2007-09-18
JP2006215163A (ja) 2006-08-17
TW200643618A (en) 2006-12-16

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