TWI311782B - - Google Patents

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Publication number
TWI311782B
TWI311782B TW093118870A TW93118870A TWI311782B TW I311782 B TWI311782 B TW I311782B TW 093118870 A TW093118870 A TW 093118870A TW 93118870 A TW93118870 A TW 93118870A TW I311782 B TWI311782 B TW I311782B
Authority
TW
Taiwan
Prior art keywords
frequency
high frequency
mhz
lower electrode
plasma
Prior art date
Application number
TW093118870A
Other languages
English (en)
Chinese (zh)
Other versions
TW200507104A (en
Inventor
Tsutomu Satoyoshi
Original Assignee
Tokyo Electron Limite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limite filed Critical Tokyo Electron Limite
Publication of TW200507104A publication Critical patent/TW200507104A/zh
Application granted granted Critical
Publication of TWI311782B publication Critical patent/TWI311782B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
TW093118870A 2003-08-01 2004-06-28 Plasma etching method and plasma treatment apparatus TW200507104A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003285125A JP3905870B2 (ja) 2003-08-01 2003-08-01 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW200507104A TW200507104A (en) 2005-02-16
TWI311782B true TWI311782B (https=) 2009-07-01

Family

ID=34364864

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093118870A TW200507104A (en) 2003-08-01 2004-06-28 Plasma etching method and plasma treatment apparatus

Country Status (4)

Country Link
JP (1) JP3905870B2 (https=)
KR (1) KR100702726B1 (https=)
CN (1) CN100477104C (https=)
TW (1) TW200507104A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466161B (zh) * 2011-05-23 2014-12-21 南亞科技股份有限公司 用以製備高寬深比結構之電漿蝕刻方法及堆疊式電容器之製備方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7879185B2 (en) * 2003-12-18 2011-02-01 Applied Materials, Inc. Dual frequency RF match
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4515950B2 (ja) * 2005-03-31 2010-08-04 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法およびコンピュータ記憶媒体
CN100367829C (zh) * 2005-12-08 2008-02-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体激励方法
JP5031252B2 (ja) * 2006-03-30 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置
CN101207034B (zh) * 2006-12-20 2010-05-19 北京北方微电子基地设备工艺研究中心有限责任公司 腔室上盖及包含该上盖的反应腔室
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
US9536711B2 (en) * 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
US8450635B2 (en) * 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
JP4905304B2 (ja) * 2007-09-10 2012-03-28 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP5474291B2 (ja) 2007-11-05 2014-04-16 株式会社アルバック アッシング装置
JP5319150B2 (ja) * 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
CN102438389B (zh) 2010-09-29 2013-06-05 中微半导体设备(上海)有限公司 单一匹配网络、其构建方法和该匹配网络射频功率源系统
CN102694525B (zh) * 2011-03-23 2015-12-02 北京北方微电子基地设备工艺研究中心有限责任公司 双频滤波装置及其处理方法和半导体设备
CN103187943B (zh) * 2011-12-28 2017-02-08 中微半导体设备(上海)有限公司 一种用于静电吸盘的射频滤波器
JP6785101B2 (ja) * 2016-09-09 2020-11-18 東京エレクトロン株式会社 プラズマエッチング方法
US10410836B2 (en) * 2017-02-22 2019-09-10 Lam Research Corporation Systems and methods for tuning to reduce reflected power in multiple states
US10991591B2 (en) * 2018-01-29 2021-04-27 Ulvac, Inc. Reactive ion etching apparatus
KR102223875B1 (ko) * 2019-10-30 2021-03-05 주식회사 뉴파워 프라즈마 다중 주파수를 사용하는 건식 식각 장비를 위한 고주파 전원 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466161B (zh) * 2011-05-23 2014-12-21 南亞科技股份有限公司 用以製備高寬深比結構之電漿蝕刻方法及堆疊式電容器之製備方法

Also Published As

Publication number Publication date
TW200507104A (en) 2005-02-16
JP3905870B2 (ja) 2007-04-18
KR20050016012A (ko) 2005-02-21
CN1581445A (zh) 2005-02-16
KR100702726B1 (ko) 2007-04-03
JP2005056997A (ja) 2005-03-03
CN100477104C (zh) 2009-04-08

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