TWI309447B - - Google Patents

Description

1309447 • IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a carrier tray for a semiconductor wafer, and particularly relates to a carrier, such as a MEMS (Micro Electro Mechanical)

Systems · Micromotor Systems) Semiconductor wafers for semiconductor wafer handling • Pallets. - [Prior Art] In recent years, MEMS, which is a device that integrates various functions such as mechatronics and photochemistry, such as semiconductor microfabrication technology, has attracted attention. As a conventional MEMS technology, for example, various sensors for automobiles and medical applications have been gradually equipped with MEMS devices as acceleration sensors, pressure sensors, and air flow sensors of micro sensors. Further, when the MEMS technology is used for the ink jet printer head, the number of nozzles for ejecting ink and the correct ink ejection can be achieved, and the quality of the enamel can be improved and the printing speed can be increased. In addition, a micro-reflex _ & mirror array used in a reflective projector is also known as a MEMS device. In the future, through the development of various sensors and actuators using MEMS technology, it is expected to expand the application of optical communication, mobile applications, and the application of computer peripherals. Bioanalytical and portable power applications. In the third issue of the technical investigation report (Sakamoto Ministry of Economy, Trade and Industry, Industrial Technology, Industrial Technology, Industrial Technology, Manufacturing Industry Bureau, Industrial Machinery Division, March 28, 2003), the status quo and issues related to MEMS technology were discussed. Introduce various MEMs technologies. On the other hand, MEMS devices are becoming more and more important because of their fine structure. In particular, in the state in which the movable molding is performed on the wafer, it is in a state of being = movable portion or the like before being packaged, and in order to prevent the occurrence of the desired bag characteristics, the handling is carried out. There is also a need to pay sufficient attention to it. [Non-Patent Document 1] Technical Investigation Report No. 3 (Sumamoto Ministry of Economy, Trade and Industry, Industrial Technology and Environment Bureau, Technical Laboratory, No. 8, Industrial Machinery Division, Industrial Bureau, Issued March 28, 2003) [Invented Problem to be Solved] Generally, when a semiconductor wafer is transported, it is usually transported by vacuum adsorption of a semiconductor wafer, but in the structure of a thin (10) device, it is difficult to adopt this method. For example, in the case where the semiconductor wafer is formed in the semiconductor wafer, a through region for forming the movable portion is provided, and there is a possibility that the through region cannot be absorbed by the through region. Further, in the leg-rigid device having a membrane-structured membrane structure, vacuum adsorption becomes a diaphragm structure of the movable portion, and since the membrane structure of the movable portion is required by vacuum adsorption adsorption, when the adsorption force is strong, the film portion is partially The possibility of destruction. Therefore, particularly in the case of the thin (10) device, it is preferable to carry the semiconductor wafer by vacuum transfer, and it is preferable to carry it stably by the transport tray for transporting the semiconductor wafer. The present invention has been made to solve the above problems, and an object of the invention is to provide a transfer tray for a semiconductor wafer which can stably convey a semiconductor wafer on which the device (10) is formed. [Description of the Invention] Patent application No. 1125I4.doc 93⁄4^3⁄4130304 ------ Wen 4 replacement page (January 98) W month, Japanese repair (more) is replacing the semiconductor crystal of the present invention A semiconductor wafer in which at least one of the microstructures having a movable portion is formed, and includes a substrate, which is provided with a semiconductor chip on the surface side on which the semiconductor wafer is placed. The offset prevention mechanism for the offset is a true X·adsorber on the back side of the conveyance. The base portion has a through portion provided in a peripheral region of the microstructure of the unmolded semiconductor wafer. The semiconductor wafer is vacuum-adsorbed together with the base portion via the through portion. Preferably, the semiconductor wafer has a hole portion. Further, the holding projection portion is provided on the surface side of the base portion to constitute an offset preventing mechanism and is fitted to the hole portion. In particular, the hole portion is provided in a region where the microstructure is not formed. In particular, semiconductor wafers have a plurality of holes. The base portion further includes a plurality of retaining projections which are respectively provided corresponding to the plurality of holes. In particular, the shape cross section of the hole portion and the holding projection portion has a polygonal shape. Preferably, the surface side of the base portion has a pit region of a specific depth which is disposed opposite to a region on the inner side of the peripheral region of the semiconductor wafer in which the microstructure is not formed, and is formed into a concave shape by column pit processing. In particular, the pit region formed on the surface side of the base portion is provided in a region facing the movable portion in which the minute structure is formed in the semiconductor wafer. In particular, at least one semiconductor structure is formed with a minute structure having a movable portion which is a beton region which is a movable region, and the hole portion is simultaneously molded by the step of forming a through region. 1125141-980115.doc 1309447: The semiconductor wafer is transported on the semiconductor wafer and larger than the area where the four small structures are formed. It is preferable that the half (four) wafer transfer tray is vacuum-adsorbed along the shape of the vacuum suction guide for performing vacuum suction. The back surface of the base has a recess corresponding to the vacuum suction guide to expand the suction area which is vacuum-adsorbed between the direct adsorption guide and the back surface. Preferably, the step further includes an outer wall portion that is coupled to the base portion to form an offset preventing mechanism provided on at least a portion of the outer peripheral end portion of the semiconductor wafer on the surface on which the conductor wafer is placed. In particular, a pit region having a specific depth on the surface side of the base portion is provided to face a region further inside than a peripheral region of the semiconductor wafer in which the microstructure is not formed, and is formed into a concave shape by column pit processing. In particular, the pillar region formed on the surface side of the base portion is provided in a region facing the movable portion in which the minute structure is formed in the semiconductor wafer. In particular, the semiconductor wafer has an orientation flat (notch) region; the outer wall σ卩 is provided corresponding to at least a portion of the outer circumferential end portion of the semiconductor wafer or the outer peripheral portion of the notched region. A semiconductor wafer transfer tray is mounted on a semiconductor wafer in which at least one microstructure having a movable portion is formed; and a semiconductor wafer is bonded to a glass substrate provided between the transfer tray and the semiconductor wafer. The glass substrate is transported. The semiconductor wafer transfer tray includes a base portion 'which is attached to the semiconductor wafer on which the glass substrate is placed. 112514.doc 13 053⁄43⁄43⁄430304 Patent Application Factory ^-------- - Chinese manual replacement page (January 98) 汾年/月相修 (more) is replacing page ' ϊ ϊ ΐ -i*A» -ir* one - J has a grading layer, on the back side of the handling The bottom enthalpy has a through hole that reaches the porous layer. The semiconductor wafer is vacuum-adsorbed together with the base portion via the porous layer. Preferably, the semiconductor wafer transfer tray is placed on the semiconductor wafer. surface It is preferable to provide an offset preventing mechanism for preventing the offset of the semiconductor wafer. Preferably, the semiconductor wafer and the glass substrate have a hole portion, and the base portion has a holding protrusion portion which constitutes an offset preventing mechanism and is fitted to the hole portion. The hole portion is provided in a region where the microstructure is not formed. In particular, the semiconductor wafer and the glass substrate have a plurality of holes, and the base portion has a plurality of holding protrusions, which are respectively provided corresponding to the plurality of holes. The shape of the hole portion and the holding projection is formed into a polygonal shape. In particular, at least one semiconductor structure is formed with a minute structure having a movable portion that is a through region of the movable region, and the hole portion is formed by the step of forming the through region. Was formed.

Preferably, the transfer tray for the semiconductor wafer is smaller than the semiconductor wafer and the glass substrate and larger than the region where the microstructure is formed. Preferably, the outer wall portion is further connected to the base portion, and the offset preventing mechanism is provided on at least a part of the outer peripheral end portion of the semiconductor wafer and the glass substrate on the surface on which the semiconductor wafer is placed on the glass substrate. By. In particular, the semiconductor wafer & glass substrate has an orientation + face or a notch region. The outer wall portion is provided corresponding to at least a portion of the outer circumferential end portion of the orientation flat or the notched region of the semiconductor wafer. 1125141-980115.doc -10· 1309447 Dare to make a porous layer of nanocrystalline crystal eve. The effect of the invention is that the transfer tray for a semiconductor wafer according to the invention includes a base portion on which a surface side of the semiconductor wafer is placed, and an offset preventing mechanism for preventing a bias of the semiconductor wafer is provided. The side is vacuum absorbed

Round: Since the bottom portion has a through region, the surface can be stably transported while preventing the offset of the semiconductor crystal. Further, the semiconductor wafer transfer tray of the present invention is a glass substrate which is bonded to a semiconductor wafer via a porous layer. According to this configuration, in the case where the semiconductor region is located in the semiconductor wafer, it is possible to stably adsorb the semiconductor wafer while preventing the offset of the semiconductor wafer. [Embodiment] > The following is a detailed description of the present invention with reference to the drawings. In the drawings, the same symbol is attached to the same or equivalent parts.

Without repeating its description. υ (Embodiment 1) Fig. 1 is an explanatory view of an inspection apparatus 3 of the embodiment of the present invention. Referring to Fig. 1, the main part of the inspection apparatus 3 of the embodiment i of the present invention is a rotor portion 33 having a transfer arm 32 that carries a semiconductor wafer (hereinafter, simply referred to as a wafer) as a test object, and inspection. The portion 36 and the wafer holding mechanism are configured to be opened, and the transfer arm 3 2 that is not attached to the rotor portion 3 is formed by a multi-joint linkage mechanism that can be rotated in the flat direction and can be moved in the vertical direction. The wafer can be transported simultaneously with a wafer for transporting a plurality of wafers (not shown) and a semiconductor wafer transport tray to be described later.

】12514.doc 11 · 1309447 The wafer holding mechanism 35 is loaded, and the wafer that has been inspected by the inspection unit 36 is reloaded into the ® box. The wafer taken out by the transfer arm 32 by the IE cassette is placed on a suction tray 34 (hereinafter simply referred to as a tray), which will be described later, and transported to the chuck 34 of the wafer holding mechanism 35 at the same time as the tray. The wafer holding mechanism 35 maintains this state and transports it to the inspection unit 36. On the other hand, in the inspection unit 36, the position detecting camera 38 of the dream aligning device 37 detects the position of the wafer to be transported. Alignment is performed based on the detected position information to perform position adjustment or the like for contacting a probe to be described later to a desired test pad of the device formed on the wafer. FIG. 2 is a schematic configuration diagram of the inspection unit 36. Referring to Fig. 2, the probe card 5 to which the probe 51 is attached is connected to the test head 55. The test head 55 is used to mount the pattern output portion of the inspection power source and the electrode electrode applied to the wafer or to output the electrode It is formed by a separate columnar body of an electric device (not shown) such as an input port for the measuring unit. The 曰s round holding mechanism 35 is a vacuum pump 1 $ as an adsorption mechanism that is connected to the suction cup 34 through a flexible conduit 丨7. The vacuum pump 18 can vacuum-adsorb the wafer and the semiconductor wafer transfer tray by the vacuum pump 18 to maintain the state to perform inspection. Fig. 3 is an explanatory view showing a transport tray for a semiconductor wafer according to Embodiment 1 of the present invention. Fig. 3 (a) is a view of the transport tray 2 for a semiconductor wafer according to the first embodiment of the present invention as seen from the upper portion. 112514.doc 1309447 Refer to Figure 3 (a) to cover the wafer! In this manner, the carrier tray 2 for a semiconductor wafer is placed in accordance with the outer diameter of the wafer, and formed into a shape capable of maintaining a semiconductor wafer. In this example, as an example, a wafer transfer tray 2 is formed in a disk shape similar to the wafer having an outer diameter larger than the outer diameter of the wafer. Fig. 3(b) In the embodiment of the invention, the semiconductor wafer transfer tray 2 is cut away from the cross-sectional view as seen in the lateral direction. As shown in Fig. 3(b), the base portion 2c having the inverted shape of the wafer is placed, and It is connected to the base portion 2 (the recessed open y-shaped outer wall portion 2b is formed for the purpose of fixing the semiconductor wafer. Further, the inner peripheral surface of the wall portion 2b is disposed along the shape of the semiconductor wafer' and is designed to be The semiconductor wafer can be held while the semiconductor wafer is placed. Further, the base portion 2e/f is provided corresponding to the outer diameter of the semiconductor wafer, and has a surface on which the semiconductor wafer is placed and a back surface for vacuum suction during transportation. Moreover, the semiconductor wafer transfer tray can use engineering plastics such as quartz or polyimine resin, P dirty, ceramic sol, and ceramics (for example, alumina (Al 2 〇 3), aluminum nitride (8) N), Cerium oxide (Zr〇2), zinc oxide, boron nitride (BN, PBN), quartz, germanium, and Stainless steel, etc. Especially in enamel, aluminum or stainless steel, because of the high thermal conductivity, it is possible to check the precision of the semiconductor wafer by @, 铭, or not. FIG. 4(4) shows that the wafer illustrated in FIG. 3 and the tray on which the wafer is placed are placed on the transfer arm 32 by 112514.doc -13· 1309447. Fig. 4(b) is a view seen from above in the state of being placed on the transport arm 32. As shown in Fig. 4(b), the tray 2 is placed on the 32a and 32b formed on the U shape. In this example, the case where the wafer 1 is placed on the tray 2 when the transfer arm 32 is placed is described as an example. For example, a storage tray for storing a semiconductor wafer (not shown) is used. (not shown), the semiconductor wafer transfer tray 2 is taken out by another transfer arm (not shown) and first placed on the arms 32a & 32b. In order to use a plurality of transfer arms, a plurality of wafers are accommodated. The wafer taken out of the box (not shown) is stored in the tray 2, and alignment is performed by using an alignment device or the like. After being adjusted, it is placed on the tray 2. Further, as an alignment device, there are various methods such as a method of performing alignment adjustment by image processing using a camera image, and a method of performing alignment adjustment by using a laser, but In the state where the wafer i is placed on the tray 2, as described above, it is transported to the chuck 34 of the wafer holding mechanism 35. Fig. 5 is a wafer An illustration of a portion of the holding mechanism 35. As shown in Fig. 5, the wafer holding mechanism 35 is slidably guided by a Y-direction guide rail 43 disposed along the γ direction, and is orthogonal to The direction in which the Υσ2Υ direction is set, that is, the X-direction guide rail U provided in the χ direction is slidably guided, and the X-stage is mounted so as to be movable up and down (Ζ direction) and to rotate the suction cup 34. In this case, as will be described later, the suction cup 34 is opened to have a hollow shape having a small hole for suction, and a vacuum pump i8 as an adsorption mechanism is connected to the hollow portion of the suction cup via a flexible line 17 of 112514.doc • 14 - 1309447. . Fig. 6 is an explanatory view showing a state in which the tray 2 is sucked by the vacuum pump 18. Referring to Fig. 6, the suction cup 34 has a plurality of suction apertures 3 on which the tray 2 is placed. By the activation of the vacuum pump 18, the inside of the hollow portion of the suction cup can be negatively pressurized and the tray 2 can be adsorbed and held. The tray 2 can be stably adsorbed in this state while holding the wafer. Here, as an example, the molding will be described. The three-axis acceleration sensor of the MEMS device is used in the wafer 1. Fig. 7 is a diagram of the three-axis acceleration sensor as seen from the device. As shown in Fig. 7, a plurality of wafers τρ formed on the wafer 1 are arranged.塾PD. In order to transmit an electrical signal to the pad or to transmit an electrical signal, metal wiring is placed. In the center, four heavy cones forming a Crowe type are arranged. Fig. 8 is a 3-axis acceleration sensor. Referring to Fig. 8, the 3-axis acceleration sensor is of a piezoresistive type, and has a piezoresistive element as a detecting element as a diffusion resistor. This piezoresistive type acceleration sensor can utilize an inexpensive 1C process. Even if a small resistive element as a detecting element is formed, the sensitivity is not lowered, so that it is advantageous for miniaturization and low cost. As a specific configuration, the central heavy cone is eight feet and presents four beams.构造Supported structure: The beam-and-beam system has four piezoresistive elements per one axis so that the two axes of X and γ are orthogonal to each other. Four piezoresistive elements for detecting the x-axis direction are arranged in X. The side surface of the piezoresistive element for the axial direction detection. The upper shape of the heavy cone AR is formed into a Cropa type, and is connected to the beam BM at the central portion H2514.doc 1309447. When this structure is used, the weight can be increased. Cone AR, while extending the length of the beam, can realize high-sensitivity acceleration sensor even if it is small. The peripheral part of the heavy cone AR is the through area, and the lower side of the beam BM is the hollow area. In the region and the void region, the heavy cone AR and the beam BM are in a movable state. That is, one of the through region and the void region becomes a movable region of the heavy cone AR and the beam bm. Moreover, the height of the heavy cone AR of the rice The h2 system is designed to be lower than the height hi of the support structure (semiconductor substrate) of the heavy cone connected to the beam b 。. The action principle of the piezoresistive 3-axis acceleration sensor is based on the acceleration of the heavy cone (inertia When the force), the beam BM will change And detecting the acceleration mechanism by the change in the resistance value of the piezoresistive element formed on the surface thereof, and setting the output of the inductor to be taken out from the output of the Wheatstone bridge described later by the three axes independently. Fig. 9 is a conceptual diagram illustrating the deformation of the heavy cone and the beam in the case of the acceleration in the direction of each axis. As shown in Fig. 9, the piezoresistive element has a resistance value which varies depending on the applied j. The nature (piezoelectric resistance effect), the resistance value will increase in the tensile strain, and the resistance value will be in the case of compressive strain. In this example, the electric resistance component Rx4 is detected in the X-axis direction, The piezoresistive elements Ryl to Ry4 for detecting the Y-axis direction and the piezoresistive elements Rz1 to Rz4 for detecting the z-axis direction are referred to as Table 7T as an example. Fig. 0 is a circuit diagram of a Wheatstone bridge provided for each axis. 112514.doc -16- 1309447 Figure is the output voltage of the X-axis and γ-axis of the Whist (four) bridge of the x (7) axis, assuming Vxol^v 分别 as the circuit structure of the Wheatstone bridge of the z-axis of Figure 10 (8) Figure. n Output voltage, assumed to be Vzout. The z-axis of the Hummer is as described above, and the strain applied by the resistance of the four piezoresistive elements of each axis changes, and according to this change, for example, the shirt ^^

The f-resistance element detects the acceleration component of the output shaft of the circuit formed by the Wheatstone bridge as the output of the independently separated output. "Output: constituting the above-mentioned circuit, (4) connecting as shown in Figure 7, etc., and the specific pad can detect the metal wiring wiring for the output voltage of each axis. JT double W 7 The DC component can also be used as a tilt angle sensor for detecting gravitational acceleration. In the embodiment of the present embodiment, in the wafer holding mechanism 35

At the time of adsorption, the suction hole of the tray (four) suction cup 34 performs adsorption.

In the wafer in which the above-described acceleration sensor is formed, as described in S, since the rose has a through region, the wafer cannot be directly transported by the vacuum i 1 8 . In the tray 2 of the first embodiment of the present invention in which the semiconductor wafer is placed, when the tray 2 is sucked by the suction hole of the suction cup 34, the vacuum can be applied in the tray and the Beton portion. The adsorption does not require a special adsorption of the wafer 1, and for example, the desired inspection can be easily performed at the inspection unit σ described above. Further, in the present embodiment, the case where the semiconductor wafer is transported by the inspection unit 36 of the inspection apparatus 30 is described in the case of 112514.doc 17 1309447, but it is not particularly limited to the inspection apparatus, for example, by vacuum adsorption of the semiconductor. In the case where the wafer is transported to another device, the transfer tray for the semiconductor wafer according to the first embodiment of the present invention can be easily and stably adsorbed and transported. (Variation 1 of the first embodiment) FIG. 11 is an explanatory view of the transport tray 2# for a semiconductor wafer according to the first modification of the first embodiment of the present invention. Referring to Fig. 11, the semiconductor wafer transfer tray 2# differs from the semiconductor wafer transfer tray 2 in that a through portion is provided in a specific region, and the other points are the same. Therefore, detailed description thereof will not be repeated. Fig. 12 is an explanatory view showing a plurality of wafers τρ formed on a general semiconductor wafer j. Here, Fig. 12, for example, shows a case where a device of a three-axis acceleration sensor forms a plurality of wafers. In the wafer, a so-called TEG (TeSt Element Gr〇up; test element) having a formation region of a MEMS device in which a micro structure having a movable portion is formed, and a member in which no member is formed or a semiconductor device is provided is generally used. Group) The composition of the surrounding area of the pattern. Here, the case where the wafer τρ of a plurality of MEMS devices is provided in the central region other than the outer peripheral region of the wafer i is shown. Since the peripheral region of the crystal is greatly affected by the characteristic error of the SMEMS device, it is often used as a peripheral region. Therefore, in such a case, that is, outside the wafer, the through region of the case where the crucible (10) device is formed is not provided. Thus, by listening to the fact that there is no through region in a particular area of the wafer, the specific 112514.doc 1309447 region of the wafer can be directly absorbed by vacuum adsorption. In the first modification of the embodiment of the present invention, for example, the through portion 4 is provided in the dry conductor wafer transport tray 2 # corresponding to the specific region portion of the wafer in which the through region is not provided. At the same time, the true m can adsorb the semiconductor wafer 1 through the suction hole 3 and through the core. Therefore, the tray 2# of the above-mentioned embodiment is configured to take the configuration of the 1st empty adsorption tray 2#, but this example can also be used because of the configuration of the eighth and the wafer 1. Has a fixed effect. Therefore, adsorption. In the case of a more stable state, it is described that, as an example, when it is understood that there is no through region in the outer peripheral region of the wafer, the through portion is provided in the outer peripheral region, and the semiconductor wafer is directly adsorbed. It is not limited to this. When it is missing, it is also known that there is no through-region 2 in other specific regions (including formation regions); and == other portions of the specific region are provided at 35 portions according to the same I-mode = vacuum-adsorbing semiconductor wafers. Fig. 13 is an explanatory view showing a deformation of the embodiment of the present invention 71, a transport tray 2 for a ten-conductor wafer. Here, the transfer and the Liuju correspond to the position of the specific region having no through-region, and when the penetration portion 4 is provided in the semiconductor wafer transfer tray 2 # a, it does not correspond to the position of the suction small hole 3 An example of the situation. In this case, the path between the position of the suction small hole 3 and the penetration portion 4 is formed on the back side of the tray 2, so that the guide through portion $ can be formed in the semiconductor wafer transfer tray 2. (Modification 2 of Embodiment 1) 112514.doc -19- 1309447 In the above-described first embodiment, 'the description relates to a disk shape similar to the wafer corresponding to the outer diameter of the wafer. In the case of a carrier tray for a semiconductor wafer having a shape, specifically, the base portion 2c having a disk-shaped shape in which the wafer is placed and the outer peripheral portion 2b provided along the shape of the semiconductor wafer on the inner peripheral surface are described. In the case of the trays of the first embodiment, the trays of the other shapes are described. FIG. 14 is a description of the carrier tray for semiconductor wafers according to the second modification of the first embodiment of the present invention. Fig. 14 (a) is a view showing an example of a transport tray for a semiconductor wafer according to a second modification of the first embodiment of the present invention. The transport tray 2 for a semiconductor wafer according to a second modification of the embodiment of the present invention. 〇The picture seen from the top. As shown in Figure 14 (a), the semiconductor The circular transport tray 2 is composed of a base portion 20a that mounts the wafer and an outer wall portion 20b that is provided along at least one of the outer peripheral end portions of the semiconductor wafer worker. Here, the outer wall portion 2b b is a configuration in which an outer wall portion is provided along the outer peripheral surface of the wafer corresponding to the entire outer peripheral end portion of the semiconductor wafer 1 as compared with the outer wall portion 2b of FIG. 3, and a portion corresponding to the outer peripheral end portion is employed. The region is disposed along the outer peripheral surface of the wafer. Here, two outer wall portions 2〇b are provided, which are disposed to face each other with the base portion 20a interposed therebetween, thereby forming a wafer to be held there. Further, here, the base portion 20a is provided in accordance with the outer diameter of the semiconductor wafer and forms a disk-like shape in which the entire wafer can be placed. Fig. 14(b) shows the implementation of the present invention. Example of a transfer tray for a semiconductor wafer according to a modification of the second aspect of the invention. FIG. 1 is a modification of the embodiment I of the present invention. 112514.doc 1309447 The transport tray for a semiconductor wafer of the second embodiment is used. As shown in Fig. 14 (b), the carrier tray for semiconductor wafers The base portion 20a of the wafer and the outer wall portion 20c are provided along at least one of the outer peripheral ends of the semiconductor wafer i. Here, the outer wall portion 2〇c and the outer wall portion 20b of Fig. 14(a) In contrast, instead of arranging two mutually opposite outer wall portions, a configuration in which the outer peripheral end portions of the wafer are surrounded by the four outer wall portions 2〇c is formed to form a wafer in which the wafer can be held. Here, although the four outer wall portions 2〇c are shown, the present invention is not limited thereto, and the outer peripheral end portion of the wafer may be surrounded by a plurality of outer wall portions along at least one of the outer peripheral end portions. Moreover, the heavier the weight of the transport tray for a semiconductor wafer, the more likely it is to have a deterioration in handling accuracy, but

It is preferable to design the shape of the transport tray for a semiconductor wafer. (Modification 3 of Embodiment 1) The reason why the arm is bent, etc., as shown in this configuration, is to protect

Figure 15 corresponds to the orientation of the plane type. Although the description of the wafer shape is circular, there is also a so-called orientation plane (orientation called U) or a gap-type wafer storage wafer. Partially set) area (notched area). Handling tray for semiconductor wafers for flat wafers 112514.doc 1309447 Illustration of the disk. In (4) and (4), the semiconductor wafer transfer tray 21 is formed so as to be able to maintain a crystal shape along the outer periphery of the wafer in accordance with the outer peripheral end region of the semiconductor wafer 1#. The semiconductor wafer transfer tray 2u shown in the figure is a pair of conductor wafers 1#, an end portion-partial region instead of the entire region, and an outer wall portion is provided along the outer peripheral surface of the wafer. Further, an outer wall portion 21b is additionally provided in a portion corresponding to the cut region (orientation plane region) of the feature of the oriented flat type wafer. Also, the same applies to the notched type wafer. Further, since the length of the inner peripheral portion of the wall portion 21b from the center point of the wafer to the outer wall portion 21 is shorter than the maximum length of the outer peripheral end portion of the wafer, the wafer can be prevented from being surrounded by the outer wall portion. The rotation inside. (Modification 4 of Embodiment 1) It is explained in this embodiment mode! In the fourth modification, the method of transporting the tray for the semiconductor wafer is more stably maintained by vacuum suction. Fig. 16 is an explanatory view of a transfer tray 2丨 for a semiconductor wafer of an oriented flat type aa round according to a fourth modification of the first embodiment of the present invention. In addition, although the conveyance tray for the semiconductor wafer of the oriented planar type wafer described in FIG. 15 (a) is described here as an example, it is not limited to this, for example, it can apply similarly to the normal. A wafer tray of round shapes. Referring to Fig. 16 (a), on the back surface of the semiconductor wafer transfer tray 21 #, for example, a plurality of circular suction holes 3 are provided symmetrically around the center point 〇 around the center point 。. On the other hand, the concave surface 5# corresponding to the suction face L 3 112514.doc -22- 1309447 is used to enlarge the adsorption area of the vacuum adsorption. The recess 5# is along the center point of the tray. The direction is set corresponding to a plurality of suction apertures 3. Fig. 16(b) is a view showing the transfer tray 21 for the semiconductor wafer of the orientation flat type wafer corresponding to the modification 4 of the embodiment of the present invention, as seen from the side direction. In the semiconductor wafer transfer tray 21# of this example, a recess 5# is provided on the back surface of the tray corresponding to the suction small hole 3 to enlarge the suction area. However, this recess 5# is symmetrically disposed around the center point 0. In this way, vacuum suction can be performed by the vacuum pump via the recess 5#. In this case, the suction force can be equally applied centering on the center point 0. Therefore, the center can be fixed as a center, and the rotation of the tray can be suppressed. (Embodiment 2) In the above-described first embodiment, a transfer tray for a semiconductor wafer which is fixed by providing an outer wall portion around a semiconductor wafer will be described. In the present embodiment 2, a description will be given of a case where the semiconductor wafer is fixed in another manner. Fig. 17 is an explanatory view showing a semiconductor wafer cassette of the embodiment 2 of the present invention. Referring to Fig. 17, a semiconductor wafer 1 of the embodiment 2 of the present invention has a hole portion 11. Here, two hole portions 11 are provided as an example. Further, although the shape of the semiconductor wafer 10 is shown as an oriented planar wafer, the same can be applied to a normal disk-shaped wafer. Further, as described above, in general, the wafer is generally formed by forming a region of a 112514.doc -23· 1309447 MEMS device having a microstructure having a movable portion and a peripheral region having no member formed. For example, since the peripheral region of the wafer has a large influence on the characteristic error, for example, in the case of molding a MEMS device, it can be considered as a peripheral region. Therefore, when the hole portion i is provided, when the hole portion U is provided in the outer peripheral region of the wafer which is difficult to mold by the MEMS device, the peripheral region can be utilized more effectively. Fig. 18 is an explanatory view showing a transport tray Φ for a semiconductor wafer according to Embodiment 2 of the present invention. Here, the semiconductor wafer transfer tray 26 is shown in the side direction. Referring to Fig. 18, the semiconductor wafer transfer tray 26 is composed of a projection 1 and a base portion 25. The semiconductor wafer 10 is placed on the surface side of the base portion 25. On the other hand, the projections 1 provided on the surface of the base portion 25 can pass through the hole portion η of the semiconductor wafer λ to fix the semiconductor wafer 1 to the base portion 25. At the same time, when the vacuum pump 18 is vacuum-adsorbed through the suction hole 3, it can be stably held, and the semiconductor crystal is adsorbed in a stable state. Here, the hole portion 11 may be formed by a drill, but it may be formed in the process of the device. Fig. 19 is a schematic explanatory view showing a process of molding the three-axis acceleration sensor illustrated in Figs. 7 and 8. As shown in FIG. 19(a), first, here, there is shown a s〇I layer 300 (SOI), a buried oxide film 301 (BOX), and a Si substrate 302 (Si-Sub) 112514.doc • 24· 1309447 s〇I wafer (S0I Wafer). Instead, the circuit pattern of the inductor is formed by the photolithography step. In addition, the anti-money agent is dropped on the surface of the wafer, and exposed to ultraviolet light by a mask to expose it to exposure and development. On the other hand, steps such as etching and resist stripping are repeatedly performed to form a circuit pattern. In Fig. 19(b), after forming the insulating film 3?5 on the s?I layer, patterning is performed by ion implantation and patterning of the insulating film to form the piezoresistor 306, and then aluminum wiring 3?4 is formed. The case where the surface is protected by the passivation film 3〇3 (SiN) f is shown in Fig. 19(4), which is followed by the Si Deep RIE technique to remove the gap between the heavy cone of the layer and the beam and the fixed frame portion. The situation up to the BOX layer. Secondly, in Figure 19 (4), it means to borrow

Sl Deep RIE technology is the case where the structure is released by the process of the above process, and the heavy cone shown in FIG. 8 can be formed by the process of releasing the structure from the gap portion of the Si substrate on the back side of the substrate and the lower portion of the beam to the BOX layer. Body and beam and fixed frame. The Si deep RIE technique can also be used to form the hole portion η at the same time as the peripheral region of the semiconductor wafer where no member is formed, by the surface and back etching, and the crucible and the fixing frame portion. Specifically, in the photolithography step, the shape formed in the mask and the shape of the hole portion in the photolithography step is sintered in the photolithography step to the anti-contact agent attached to the substrate. After the development of the residual agent, the hole portion 即可 can be formed with high precision by the surface and back surface _ substrate by the Si Deep RIE technique. Because b does not need to set a special device or set a special part for the hole part, the hole part 112514.doc -25- 1309447 11 can be formed at the same time as the acceleration sensor is formed. The hole portion 11 is formed in the ground. Moreover, since the shape of the hole portion of the south precision can be formed by the Si Deep rie technique, it is also advantageous in terms of cost.

Here, the case where the hole portion 嵌合 and the protrusion portion 1〇〇 that are fitted and penetrated is described as an example, but the case where the hole portion 不 is not penetrated may be used. For example, when the hole portion 11 and the protrusion portion 100 which are not penetrated are fitted, the same effect can be expected. Further, the shape of the hole of the hole portion 11 and the shape of the protrusion portion 100 may be formed by forming the circular hole portion 11 and the protrusion portion 100 as an example. For example, the shape of the hole portion 11 and the protrusion portion 100 may be formed. Angled. Fig. 20 is an explanatory view of another semiconductor wafer i # of the embodiment 2 of the present invention. Referring to Fig. 2A, another semiconductor wafer i# of the embodiment 2 of the present invention has a hole portion 11#° where two hole portions 11# are provided as an example. ^ The hole portion is different from the hole portion u described in Fig. 17, and is formed in a shape of a triangle... in the shape of a plurality (four). The m-shaped section is formed into a projection to fit the hole portion u#. Because &, when the starting part and the hole part, compared with the shape of the circular circle, the part can generate a fastening force, so that the rotation/step suppression semiconductor wafer (4) of the relationship of the part 25 can be pushed. The size may also be smaller than the size of the semiconductor wafer 1 is larger than the area where the microstructure is formed = the area, for example, the area of the (four) wafer or the area of the wafer. Therefore, semi-guide alignment adjustment can be utilized. In the above, although the case where the hole portion 11A11# is provided in the outer peripheral region other than the central portion of the molding device, the description will be made regarding the hole portion 11A11#. The position of the 11# and the position of the 11# can also be formed in any area, and the same effect as described above can be obtained by setting the corresponding large lifting portion. Further, it is also possible to design the hole portion and the corresponding projection portion in a portion of the region in which the device is formed. (Modification of the embodiment 2) FIG. 21 is an explanatory view of the semiconductor wafer transfer tray 27 according to the modification 1 of the embodiment 2 of the present invention. Referring to FIG. 21, the semiconductor wafer transfer tray 27 and the semiconductor are used. The wafer transfer tray 26 differs in that the base portion 25 is replaced by the base portion 25 #. The base portion 25 # base portion 25 differs in that a through portion is provided in the special region. The detailed description is not repeated. As described above, 'in the case where there is no penetration region® in a specific region of the wafer in advance', the specific region of the wafer can be attracted by vacuum adsorption. In the first modification of the second embodiment, for example, the penetration portion 4 is provided in the semiconductor wafer transfer tray 27 in accordance with the specific region portion of the wafer in which the Beton region is not provided. Meanwhile, the vacuum pump 18 can pass through the suction small hole. 3 and the through portion 4 directly vacuum-adsorbs the semiconductor wafer 1#. Therefore, it can be held more stably than the above-described embodiment 2, and can be adsorbed in a more stable state. Here, as an example, Understand the crystal Outside 112512.doc -27 - 1309447 When there is no through-region in the area, a through-region is provided in the outer peripheral region, and the semiconductor wafer is directly absorbed by the semiconductor. However, the present invention is not limited thereto, and it is of course possible to understand other specific regions (including In the formation region), when there is no through region, the through-region is provided in the other special region, and the semiconductor wafer is vacuum-adsorbed. FIG. 22 is a modification of the embodiment 2 of the present invention. 2 8 $约,ΒΒ ΕΙ . , ^ ^ 图. Here, the series corresponds to the position of the specific region without the through-region, when the penetration portion 4 is provided in the semiconductor wafer transport tray 28, so that it is not attracted In the case where the position of the small hole 3 corresponds, in this case, since the path between the position of the suction small hole 3 and the penetration portion 4 is formed on the back side of the base portion 25#3, it can be molded into The semiconductor wafer transfer tray 28 is formed with the guide through portion 5. In the above embodiment, the S-device for the three-axis acceleration sensor is mainly described, but the present invention is not limited thereto, and for example, the same can be applied. A MEMS device having a through-region is provided. Here, for example, a minute structure relating to a movable portion of a film having a diaphragm structure will be described. Fig. 23 is an explanatory view showing a case where a diaphragm structure is used in an irradiation window of an electron beam illuminator. As shown, a portion of the illumination window 80 that emits an electron beam from the atmosphere by the vacuum tube 81 is shown, as shown in the enlarged cross-sectional configuration, using a membrane diaphragm structure. Further, in Fig. 23, although the diaphragm is formed of a single material, Only one diaphragm structure is illustrated, but it is also possible to form a multilayer film structure from a plurality of materials, or an irradiation window in which a plurality of barrier structures 112532.doc -28-1309447 are arrayed. In the case of a semiconductor wafer in which a MEMs device having a membrane structure of such a film is adsorbed and formed, the adsorption force may cause the film to be adsorbed to a movable region of the thin crucible to cause cracks. Therefore, as in the embodiment of the present invention, when the tray is provided in such a manner that the film portion is not directly vacuum-adsorbed, it can be stably held, and the semiconductor wafer can be safely handled. In the above-described second embodiment, the case of the semiconductor wafer transfer tray in which the wafer can be stably conveyed while the projection portion and the hole portion are fitted is described. However, the present invention is not limited thereto, and the above-described embodiment may be combined. In the manner described in the ninth and its modifications, for example, the configuration in which the outer wall portion is provided along the outer circumferential surface of the wafer is employed, whereby the wafer can be conveyed more stably. (Embodiment 3) In the above-described Embodiments 1 and 2, the case where the surface of the semiconductor wafer and the semiconductor wafer transfer tray are placed in close contact with each other in substantially the entire area is described. The need for the construction of semiconductor wafer MEMS devices is necessary for further planning. Fig. 24 is a schematic view showing a three-axis acceleration sensor different from the three-axis acceleration sensor illustrated in Fig. 8. Referring to Fig. 24, the difference between the three-axis acceleration sensor and the three-axis acceleration sensor illustrated in Fig. 8 is that the height h2 of the heavy cone is designed as a heavy cone connected to the beam BM. The height of the support structure (semiconductor substrate) of the body AR is the same height level. The other parts are the same. In the case of the 3-axis acceleration sensor of the structure, the height of the support of the heavy cone AR is H25l4.doc -29- 1309447 偁ie and the height of the movable part is used as the movable part of the high-end household /#, ^ - the plant muscle degree is designed to be In the case of the semiconductor carrier, the heavy-duty AR# as the movable part is used for the transportation of the semiconductor wafer carrier tray. In the state τ of the tray, in the above-mentioned inspection = the inspection device 30 of the semiconductor crystal squid, it is possible that the movable portion cannot be properly loaded, and the desired inspection cannot be performed.

Figure 25 is an explanatory view of a semiconductor #P of Embodiment 3 of the present invention. Referring to Fig. 25 (4), the semiconductor wafer transfer tray 2#p is different from the semiconductor wafer transfer tray 2# described in Fig. n in that it is formed as a base portion on which the semiconductor wafer is placed. The surface portion is subjected to the shape of the pit processing (column pit area). #他点点 is the same as that illustrated in Figure u, so the detailed description is not repeated.

Referring to Fig. 25(a), in this example, as shown in Fig. 12, in the case where the wafer is provided in the central region or the like, the wafer is formed on the surface of the tray 2#p facing thereto. The pit region of a specific depth of the concave shape is formed so as not to form a pit region on the surface of the tray 2#p which is not provided with the outer peripheral region of the wafer TP, that is, the peripheral region. In other words, the column region 0 is formed on the surface of the tray 2#p which is located further inward than the peripheral region. As shown in FIG. 25(b), as an example, the weight of the movable portion of the 3-axis acceleration sensor is as shown in FIG. Since the body AR is provided with a specific space gap by performing the pit processing on the semiconductor wafer transfer tray 2 #p, 112514.doc -30- 1309447, it is possible to avoid contact with the semiconductor wafer transfer tray 2#p. surface. Therefore, a desired inspection can be performed in the above-described inspection apparatus 30. In the case where the semiconductor wafer transfer tray 2 #p is provided with a penetration portion and is directly vacuum-adsorbed to the semiconductor wafer in the region of the peripheral region of the through-region where the semiconductor wafer is not provided, the semiconductor wafer can be stably adsorbed. Semiconductor wafers. (Variation 1 of Embodiment 3) FIG. 26 is an explanatory view of a transport tray 2#q for a semiconductor wafer according to a modification 1 of the third embodiment of the present invention. Referring to Fig. 26 (a), the semiconductor wafer transfer tray 2 #q is used to perform the pit processing in accordance with the specific pattern on the surface portion of the base portion on which the semiconductor wafer is placed. In the configuration of the semiconductor wafer transfer tray 2#p described in FIG. 25(a), the surface portion of the base portion on which the semiconductor wafer is placed is applied to the entire region where the wafer τρ is provided, for example, the central portion. In the entire portion, the column processing is performed. However, in the region where the wafer TP is provided, the surface portion of the base portion facing the movable portion is subjected to column processing. With this configuration, in the case where the MEMS device is a 3-axis acceleration sensor, as shown in Fig. 26 (b), the pit portion processing can be applied to the surface portion of the base portion facing the heavy cone AR. Therefore, in the portion of the supporting structure of the heavy cone AR, it is in a state of being close to or in contact with the surface portion of the base portion. Therefore, compared with the configuration of the figure, it is possible to suppress the semiconductor wafer from being bent by the self-weight of the semiconductor wafer and transport it. The other points are the same as in Fig. 25. 112514.doc • 31 - 1309447 (Modification 2 of Embodiment 3) In the above-described Embodiment 3 and its modifications, the description will be made regarding the use of the plow state 1 in the transport tray for semiconductor wafers. For the semiconductor wafer, the transport tray is configured by column pit processing. However, the present invention is not limited thereto, and it is of course possible to adopt a configuration in which the column for the semiconductor wafer described in Embodiment 2 is subjected to column pit processing. Fig. 27 is an explanatory view of the Φ transport tray 26# for the semiconductor wafer according to the second modification of the third embodiment of the present invention. Referring to Fig. 27, the semiconductor wafer transfer tray 26 is composed of a projection 1b and a base portion 25p. The semiconductor wafer 10 described with reference to Fig. π is placed on the base portion 25p as an example, and is not shown. In this case, the protrusion 1 provided on the surface of the base portion 25p penetrates through the hole portion 11 of the semiconductor wafer 10, and as described above, the semiconductor wafer 1 and the base portion 25p are fixed. The surface portion on which the base portion 25p of the semiconductor wafer is placed is subjected to column pit processing in accordance with a specific pattern. Specifically, as described in Fig. 26 (b), the surface portion of the base portion facing the eight-foot heavy cone is subjected to column processing. Therefore, in the portion of the supporting structure of the heavy cone AR, it is in a state of being close to or in contact with the surface portion of the base portion. Therefore, as described above, it is possible to suppress the semiconductor wafer from being bent by the self-weight of the semiconductor wafer and transport it. Further, as shown in Fig. 21 and Fig. 22, a configuration in which the semiconductor wafer 1 is directly vacuum-adsorbed by a vacuum pump to the through portion 4 of the base portion 2 is used. Further, the configuration in which the guide penetration portion 5 has formed a path between the 112514.doc -32 and .1309447 between the penetration portion 4 and the passage portion 4 is not shown. At the same time, when the vacuum system 18 vacuum-adsorbs the transfer tray for the semiconductor wafer through the suction small hole 3, it can be stably held, and the semiconductor wafer is adsorbed in a stable state.

Further, in the transfer tray for a semiconductor wafer described in the above embodiment, the addition of X to the through portion or the like may be performed by machining using a drill. However, it may be molded by a process of the apparatus. Fig. 28 is a schematic explanatory view showing a process of molding the transfer tray for a semiconductor wafer described in Fig. 27. Here, the process for processing the back side of the transfer tray for semiconductor wafers is shown. Specifically, referring to Fig. 28(a)' as the back side of the processing tray, etching is performed on the 8] substrate (Si-Sub) by two masks. Specifically, the base portion 25p is covered by the mask MSK1 for forming the through portion 4 and the mask MSK2 for forming the guide through portion. Next, referring to Fig. 28 (b), the region of the base portion 251 of the Si substrate which is not covered by the mask MSK1 and the mask MSK2 is subjected to dry etching to form the through portion 4. And remove the mask MSK1. Next, referring to Fig. 28(c), the region of the base portion 25p of the Si substrate not covered by the mask MSK2 is subjected to dry etching to form a guiding through portion. As an example of these two masks, a conventional light anti-money agent can be used for the mask MSK1. Further, as the mask MSK2, a hard mask such as SiO 2 , SiN or Ti may be used in addition to the permanent anti-reagent such as polyimide. On the other hand, referring to Fig. 28 (d), the Si substrate was thermally oxidized to cover the entire base portion 25p with a film of ruthenium oxidized '· U25l4.doc - 33 - 1309447 . On the other hand, the processing of the surface of the base portion 25p is performed next. Referring to Fig. 28(e), the tantalum oxide film is etched by wet etching using an anti-contact agent mask protection (not shown) other than the region where the pillar region is formed. Next, referring to Fig. 28 (f), the base portion 25 of the Si substrate is wet-etched by a so-called TMAH aqueous solution using a tantalum oxide film as a mask, and a pillar region is formed on the surface of the base portion 25p facing the movable portion. On the other hand, the base portion 25p of the transfer tray for a semiconductor wafer described in Fig. 27 can be formed by peeling off the tantalum oxide film with hydrofluoric acid with reference to Fig. 28(g)'. On the other hand, when the protrusion portion 1 is provided next to the base portion 25p, the semiconductor wafer transfer tray 26# can be formed. When the transfer tray for a semiconductor wafer is molded by this process, the processing accuracy can be improved and the tray can be easily formed. (Embodiment 4) The semiconductor wafer of Embodiment 4 of the present invention has a structure in which a semiconductor wafer is bonded to the semiconductor wafer described in the above Embodiments 1 to 3. In the device in which a large number of through holes are provided, such as the above-described acceleration sensor, it is necessary to bond the glass substrate or the like in order to maintain the strength of the device. In the fourth embodiment, the semiconductor wafer carrying tray having the semiconductor wafer bonded to the glass substrate is transported. Fig. 29 is an explanatory view showing a transport tray for a semiconductor wafer according to Embodiment 4 of the present invention.参,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, With the broken glass substrate la. Further, the glass substrate to be bonded here is "having the same shape and the same size as the semiconductor wafer 1. Therefore, for example, in the case of a semiconductor wafer, the shape of the glass substrate is the same, and the shape of the glass substrate is also the same shape. In the case where the shape of the circle is an orientation flat or a notch type, the same shape is used for the corresponding glass substrate. The semiconductor wafer transfer tray 2r of the embodiment 4 of the present invention and the semiconductor wafer transfer tray 2 of FIG. The difference is that the structure of the porous layer described later is further provided on the surface side of the base portion, and the configuration of the through portion 4 is provided between the back surface side of the base portion and the porous layer. The glass substrate u can be vacuum-adsorbed through the porous layer. In the MEMS device formed of the three-axis acceleration sensor of the semiconductor wafer 1 described above, a through region is provided, and it is difficult to borrow in the region where the MEMs device is formed. The point where the through-region directly vacuum-adsorbs the semiconductor wafer 1 has been described as 'but in the specification of the bonded glass substrate, it is considered to be true due to the glass substrate. Empty adsorption, and can solve the problem of handling. However, the glass substrate usually uses very thin glass. If the wafer is directly placed on the mounting table and adsorbed through the glass substrate, the glass substrate and the wafer will follow the mounting table. The upper suction is deformed by the pattern of the small holes, and there is a problem that the correct test of the device cannot be obtained. However, when the vacuum adsorption is performed through the tray having the porous layer, the pattern depending on the suction small holes can be made. The difference in the adsorption force is kept uniform. The generation of the porous layer is explained. Fig. 30 is an explanatory diagram of the generation of the porous layer NCS. 112514.doc -35· 1309447 For the substrate portion 2 of the single crystal substrate: On one of the surface sides, a porous nanocrystalline crystal layer of a porous layer NCS is formed and anodized. According to FIG. 30, when anodizing is performed, an anodizing of 2r is performed by using a sealing material as a substrate portion. An outer wall 41 is disposed around the surface of the object to be treated, and the electrolyte 45 is injected into the outer surface of the outer wall to contact the electrolyte 45 at the portion of the surface of the object to be treated. In the case of 45, the recording electrode 44 is disposed so as to face the surface of the substrate portion, and the current-carrying electrode 42 is attached to the back surface side of the substrate portion 2r, and the wire connected to the current-carrying electrode 42 is connected to the positive side of the current source, and will be turned over. The electrode 44 is connected to the negative side of the current source 2A. The electrode 42 for energization is used as the anode, and the platinum electrode 44 is used as the cathode. The electric current of the specific electrical conductivity is passed from the current source to the electrode 42 and the platinum electrode. Between 44, a specific energization time is continued. By this kind of anodizing treatment, a heat insulating layer NCS having a thickness substantially constant can be formed inside the outer wall 41 of the surface of the substrate portion. Further, as an electrolytic solution used for anodizing treatment 45. For example, a mixed liquid (HF/ethanol solution) in which 1:1 wt% of hydrogen fluoride water and a mixture of ethanol and ethanol are mixed in a ratio of 1 to 1. As the sealing material, for example, a sealing material composed of a fluorine-containing resin can be used. According to this embodiment, a porous nanocrystalline crystal layer can be formed on the surface side of the substrate portion 2r. When the glass substrate 1 a is vacuum-adsorbed through the porous nanocrystal crystallization layer, the glass substrate in contact with the porous layer can be uniformly sucked. That is, 'vacuum adsorption is applied to the contact between the substrate and the matte layer, and the vacuum adsorption is not applied to the substrate of the glass substrate 112514.doc -36· 1309447. Therefore, it will be small due to the attraction on the suction cup. The difference in the adsorption force of the pattern of holes causes unintentional displacement of the glass substrate and the semiconductor wafer. Therefore, the respective minute structures formed on the semiconductor wafer are not affected by the unintentional displacement, so that stable and highly reliable test results can be obtained in the semiconductor wafer. _. Although a MEMS device having a three-axis acceleration sensor having a through-region is exemplified here, the same can be applied to other MEMS devices. In the configuration described in the fourth embodiment, the outer wall portion may be provided as described in the first embodiment, and the semiconductor wafer may be conveyed more stably. The hole may be provided as described in the embodiment 2. The semiconductor wafer and the semiconductor wafer transfer tray are transported by the projections and the projections. Further, in this case, it is necessary to provide a hole portion similar to that of the semiconductor wafer in the glass substrate, and to be fitted to the protrusion portion provided on the side of the semiconductor wafer (4) (4). They are for illustrative purposes only and should not be considered to have (iv) m. The scope of the present invention is defined by the scope of the invention, and is not intended to BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view showing an inspection apparatus 3 of an embodiment 1 of the present invention. FIG. 2 is a schematic configuration diagram of the inspection unit 36. Figures 3 (4) and (b) are embodiments of the present invention! Handling of semiconductor wafers 1125i4.doc •37· 1309447 Description of the tray. 4(a) and 4(b) are explanatory views of the conveyance arm 32 being conveyed to the wafer holding mechanism μ shape. FIG. 5 is an explanatory diagram of a portion of the wafer holding mechanism 35. Fig. 6 is an explanatory view showing a state in which the tray 2 is sucked by the vacuum pump 18. Figure 7 is a diagram of the 3-axis acceleration sensor as seen from the device above. Figure 8 is a schematic view of a 3-axis acceleration sensor.

Fig. 9 is a conceptual view showing the deformation of a heavy pyramidal beam which is subjected to the respective axial directions and %. 1. Figures 10(4) and (b) show the circuit configuration of the Wheatstone bridge for each axis. Fig. 11 is an explanatory view showing a transport tray 2# for a semiconductor wafer according to a first modification of the first embodiment of the present invention. Fig. 12 is an explanatory view of a plurality of wafers Tp formed on the main conductor of the same day. Fig. 1 is an explanatory view of another semiconductor wafer carrying tray 2#a according to the first modification of the first embodiment of the present invention. Fig. 14 (3) and (b) are explanatory views of a transport tray for a semiconductor wafer according to a second modification of the first embodiment of the present invention. Fig. 15 (a) and (b) are explanatory views of a transfer tray for a semiconductor wafer corresponding to an oriented planar wafer. Fig. 6 (a) and (b) are explanatory views of a transport tray for a semiconductor wafer which is rounded in a plane in a modified example 4 of the first embodiment of the present invention. Fig. 17 is a view showing a semiconductor wafer 1 according to the embodiment 2 of the present invention. H2514.doc 08- 1309447 Fig. 1 is an explanatory view of a transfer tray for a semiconductor wafer according to an embodiment 2 of the present invention. 19(a) to (d) are schematic explanatory views showing a process of molding the three-axis acceleration sensor described with reference to Figs. 7 and 8. Figure 20 is an illustration of another embodiment of the semiconductor wafer 1 of the embodiment of the present invention. Fig. 21 is an explanatory view showing a transfer tray 27 for a semiconductor wafer according to a first modification of the second embodiment of the present invention. Fig. 2 is an explanatory view of another semiconductor wafer carrying tray 28 according to the first modification of the second embodiment of the present invention. Fig. 23 is an explanatory view showing a case where a diaphragm structure is used in an irradiation window of an electron beam illuminator. Fig. 24 is a schematic diagram showing another three-axis acceleration sensor different from the three-axis acceleration sensor illustrated in Fig. 8. Figs. 25(a) and (b) are explanatory views of the transport tray 2 #p of the semiconductor wafer according to the third embodiment of the present invention. (b) is an explanatory view of the semiconductor wafer transfer tray 2 #q according to the first modification of the third embodiment of the present invention. Fig. 27 is an explanatory view showing a transfer tray 26 # for a semiconductor wafer according to a second modification of the third embodiment of the present invention. Fig. 28 (a) to (h) are schematic explanatory views showing the process of molding the carrier tray for a semiconductor wafer described with reference to Fig. 27. Fig. 29 is an explanatory view of a transfer tray for a semiconductor wafer of the fourth embodiment of the present invention, 112514.doc - 39 - 1309447. Fig. 30 is an explanatory view showing the generation of the porous layer NCS.

[Description of main component symbols] 1, 1 #, 10, 10# 2, 2#, 2#a, 2#p, 2 # q, 2r, 20, 21, 25p, 26~28 3 4 , 11 , 11# 17 18 30 32 33 34 35 36 37 50 51 55 80 100 Semiconductor wafer semiconductor wafer transfer tray suction small hole section line Vacuum pump inspection device Transfer arm rotor part suction cup wafer holding mechanism inspection part alignment device probe Card probe test head illumination window protrusion 112514.doc -40-

Claims (1)

13〇23〇3〇4 Patent Application Chinese Application Patent Renewal (January 1998)--___ X. Patent Application: | Back Year/Monthly Repair (More) Original I Semiconductor Wafer With the handling tray, the basin 俜 罟 古 ,, * 八 载 载 载 载 载 载 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体The side is provided with an offset preventing mechanism for preventing the offset of the semiconductor wafer, and is vacuum-adsorbed on the back side when transporting; and the base portion is provided in a peripheral region of the minute structure in which the semiconductor wafer is not formed. The through-wafer portion; the semiconductor wafer is vacuum-absorbed together with the base portion via the through portion. 2. The semiconductor wafer transfer tray according to claim 1, wherein the semiconductor wafer has a hole portion, and further comprising: a holding protrusion portion that is provided on a surface side of the base portion to constitute the offset preventing mechanism Fitted to the aforementioned hole. 3. The transfer tray for a semiconductor wafer according to claim 2, wherein the hole portion is provided in a region where the minute structure is not formed. 4. The semiconductor wafer transfer tray according to claim 2, wherein the semiconductor wafer has a plurality of the hole portions; and the base portion further includes: the plurality of the holding protrusions ' respectively corresponding to the plurality of holes Set by. 5. The carrier wafer for a semiconductor wafer according to claim 2, wherein the hole portion and the shape of the holding protrusion are formed in a polygonal shape. The carrier tray for a semiconductor wafer according to any one of claims 1 to 5, wherein the surface side of the base portion has a pit region of a specific depth, and the pair is opposite to the unformed The peripheral region of the semiconductor wafer of the microstructure is provided on the inner side of the region, and the II pillar is formed into a concave shape. 7. The carrier tray for a semiconductor wafer according to claim 6, wherein the pillar region formed on the surface side of the base portion faces a region in which the movable portion of the microstructure is formed in the semiconductor wafer. be set to. In the transport tray for a semiconductor wafer of the moon-length item 2, at least one of the semiconductor domes having a movable portion having a movable portion that is a through region of the movable region is formed, and the hole portion is formed by the step of forming the through region. Formed. 9. The carrier wafer for semiconductor wafer according to claim 1, wherein the semiconductor (transport) (four) is smaller in size than the pre-material (four) wafer and larger than the region in which the micro-structure is formed. 10. The transfer tray for a semiconductor wafer according to claim 1, wherein the transfer tray for the semiconductor wafer is vacuum-adsorbed along a shape of vacuum suction for performing a true line; and the back surface of the base portion has a corresponding In the case of the vacuum adsorption guide; a recess is formed to enlarge the adsorption area of the vacuum adsorption guide and the front surface. The semiconductor wafer transfer tray of claim 1, wherein the step further comprises an outer wall portion connected to the base portion, and configured to cut the surface of the semiconductor wafer along an outer peripheral end of the semiconductor wafer The aforementioned offset prevention mechanism of at least a portion of the area is provided. The carrier tray for semiconductor wafer according to claim n, wherein the surface side of the base portion 1125I4J-980jJ5.doc 1309447 has a pit region of a specific depth, which is opposite to the semiconductor of the microstructure described below. The peripheral area of the wafer is disposed on the inner side of the area, and is formed into a concave shape by the column pit processing. The carrier wafer for semiconductor wafer according to claim 12, wherein the pillar region formed on the surface side of the base portion is opposed to a region in which the movable portion of the microstructure is formed in the semiconductor wafer And is set. 14. The semiconductor wafer carrying tray according to any one of the preceding claims, wherein the semiconductor wafer has an orientation plane (〇rientati〇n or a notch region; Provided to at least a part of the outer peripheral end portion of the orientation flat surface or the notch region of the semiconductor wafer. 15. A semiconductor wafer transfer tray in which at least one minute structure having a movable portion is formed The semiconductor wafer is bonded to a glass substrate provided between the semiconductor wafer transfer tray and transported through the glass substrate; the semiconductor wafer transfer tray includes a substrate a portion in which a porous layer is provided on the surface side of the semiconductor wafer on which the glass substrate is interposed, and a vacuum layer is adsorbed on the back side of the semiconductor wafer. The base portion has a through hole that reaches the porous layer. The semiconductor wafer is vacuum-adsorbed together with the base portion via the porous layer. 16. The carrier wafer for a semiconductor wafer according to claim 15 In the above-described semiconductor wafer transfer tray, an offset preventing mechanism for preventing the offset of the semiconductor wafer is provided on the surface side of the semiconductor wafer 1125141-980115.doc 1309447. 17. The semiconductor wafer of claim 15 In the transport tray, the semiconductor wafer and the glass substrate have a hole portion; and the base portion has a holding protrusion portion constituting the offset preventing mechanism and is fitted to the hole portion. 18. In the transport tray for a semiconductor wafer, the hole portion is provided in a region where the microstructure is not formed. 19. The semiconductor wafer transfer tray according to claim 17, wherein the semiconductor wafer and the glass substrate have a plurality of the holes The base portion has a plurality of the holding protrusions, which are respectively provided corresponding to the plurality of holes. The semiconductor wafer carrier tray of claim 17, wherein the hole portion and the holding protrusion are provided. The shape of the portion is formed into a polygonal shape. 21. The carrier tray for a semiconductor wafer according to claim 17, wherein the semiconductor B At least one micro-structure having a movable portion that is a through-region of the movable region is formed in a circle, and the hole portion is formed simultaneously by forming a through-region. 22. The semiconductor according to any one of claims 15 to 21 In the wafer transfer tray, the semiconductor wafer transfer tray is smaller than the semiconductor wafer and the glass substrate, and is larger than the region in which the microstructure is formed. 23. The semiconductor wafer transfer tray according to claim 15, wherein further The outer wall portion is connected to the base portion, and the surface of the semiconductor wafer is placed along the surface of the semiconductor wafer and the outer peripheral end portion of the glass substrate of the 1125141-980115.doc 1309447 glass substrate. The aforementioned offset prevention mechanism of a part of the area setting. 24. The semiconductor wafer carrier tray of claim 23, wherein the semiconductor wafer and the glass substrate have an orientation flat or a notched region; and the outer wall portion corresponds to the outer peripheral end of the orientation plane or the notch region of the semiconductor wafer At least part of it is set. 25. The transfer tray for a semiconductor wafer according to claim 15, wherein the porous layer is a nanocrystalline ruthenium. 1125141-980115.doc 1309447 VII. Designated representative map: (1) The representative representative of the case is: (3). (2) A brief description of the component symbols of this representative diagram: 1 Semiconductor wafer 2 Handling tray for semiconductor wafer 2b Outer wall portion 2c Base bottom 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: (none) 112514.doc