JP2007088416A - Conveyance tray for semiconductor wafer and semiconductor wafer conveyance system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a conveyance tray for a semiconductor wafer which can convey stably the semiconductor wafer in which an MEMS device is cast. <P>SOLUTION: The conveyance tray for the semiconductor wafer includes a base 2c of disk-like profile where the wafer is laid, and an outer wall portion 2b formed in a recess profile in order to fix the semiconductor wafer. The inner periphery of this outer wall portion 2b is provided along the profile of the semiconductor wafer, and shall be designed so that it may be fixed, when the semiconductor wafer is laid. In addition, the base 2c has a front surface provided corresponding to the outer diameter of the semiconductor wafer, and placing the semiconductor wafer, and a rear surface for performing a vacuum adsorption on the occasion of the conveyance. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a transport tray for semiconductor wafers, and more particularly to a transport tray for semiconductor wafers and a semiconductor wafer transport system for transporting a semiconductor wafer in which a microstructure such as MEMS (Micro Electro Mechanical Systems) is molded.

  In recent years, MEMS, which is a device in which various functions such as mechanical, electronic, optical, chemical, etc., are integrated, particularly using semiconductor microfabrication technology, has attracted attention. As MEMS technology that has been put into practical use, MEMS devices have been mounted on acceleration sensors, pressure sensors, air flow sensors, and the like, which are microsensors, for example, as various sensors for automobiles and medical use. In addition, by adopting this MEMS technology in the ink jet printer head, it is possible to increase the number of nozzles for ejecting ink and to eject ink accurately, thereby improving the image quality and increasing the printing speed. Furthermore, a micromirror array used in a reflective projector is also known as a general MEMS device.

  In the future, various sensors and actuators using MEMS technology will be developed, which will be applied to optical communication and mobile devices, computer peripherals, bioanalysis and portable power supplies. Is expected to be. In the Technical Survey Report No. 3 (issued by the Industrial Technology Division, Industrial Technology and Environment Bureau, Ministry of Economy, Trade and Industry, published on March 28, 2003), there are various MEMS technologies on the agenda of the state of technology and issues related to MEMS. It has been introduced.

On the other hand, since the MEMS device is a fine structure, means for transporting it is also important. Especially when a MEMS device having a movable part is molded on the wafer, the movable part is exposed because it is in front of the package, so that it is sufficient even during transport so as not to affect the desired device characteristics. You need to be careful.
Technical Survey Report No. 3 (issued by the Ministry of Economy, Trade and Industry, Industrial Technology and Environment Bureau, Technical Research Office, Manufacturing Industry Bureau, Industrial Machinery Division, March 28, 2003)

  In general, when a semiconductor wafer is transported, a method of sucking and transporting the semiconductor wafer by vacuum suction is used. However, the method may be difficult to adopt in the structure of the MEMS device.

  For example, when a through region for forming a movable part is provided in a MEMS device molded on a semiconductor wafer, there is a possibility that vacuum suction cannot be performed by the through region. In addition, in a MEMS device having a thin film membrane structure, when the membrane structure serving as a movable part is vacuum-adsorbed, the thin-film part is formed when the thin film membrane structure serving as the movable part is adsorbed by vacuum adsorption and the adsorption force is strong. May be destroyed.

  Therefore, particularly in the case of a MEMS device, when a semiconductor wafer is transferred by vacuum suction, it is desirable to stably transfer the wafer using a transfer tray for transferring the semiconductor wafer.

  The present invention has been made in order to solve the above-described problem, and is capable of stably transporting a semiconductor wafer on which a MEMS device is molded, a semiconductor wafer transport tray, a semiconductor wafer, and the semiconductor wafer transport tray. It is an object to provide a semiconductor wafer transfer system comprising:

  A semiconductor wafer transfer system according to the present invention includes a semiconductor wafer and a transfer tray for a semiconductor wafer on which the semiconductor wafer is placed. The semiconductor wafer has a central region where at least one microstructure having a movable part is molded and an outer peripheral region where a microstructure provided so as to surround the central region is not molded. The semiconductor wafer transfer tray is provided according to the outer diameter of the semiconductor wafer, and has a front surface on which the semiconductor wafer is placed, a base portion having a back surface for vacuum suction when the semiconductor wafer is transferred, and a front surface side on which the semiconductor wafer is placed. And a misalignment prevention mechanism for preventing misalignment of the semiconductor wafer. The base portion is provided corresponding to the outer peripheral region of the semiconductor wafer, and when the semiconductor wafer is transported, a through portion for vacuum-sucking the semiconductor wafer together with the base portion, and a surface side of the base portion facing the central region of the semiconductor wafer And a counterbore region having a predetermined depth formed in a concave shape facing the movable portion of the microstructure of the semiconductor wafer by counterbore processing.

  Preferably, the semiconductor wafer has a hole. It further has a holding projection that is provided on the surface side of the base and fits into a hole that constitutes the misalignment prevention mechanism.

In particular, the hole is provided in the outer peripheral region.
In particular, the semiconductor wafer has a plurality of holes. The base further includes a plurality of holding projections provided corresponding to the plurality of holes, respectively.

In particular, the shape cross sections of the hole and the holding projection are formed in a polygonal shape.
In particular, a semiconductor wafer has a through region that becomes a movable region of a microstructure having a movable portion, and the hole of the semiconductor wafer is molded together with the through region.

  Preferably, the base portion is designed to be smaller than the semiconductor wafer and larger than the central region where the microstructure is molded.

  Preferably, the semiconductor wafer transfer tray is vacuum-sucked along the shape of a vacuum suction guide for performing vacuum suction. A guide penetrating portion is further provided on the back side of the base portion and forms a path between the vacuum suction guide and the penetrating portion.

  Preferably, the apparatus further includes an outer wall portion that is connected to the base portion and constitutes a displacement prevention mechanism provided along the at least a partial region of the outer peripheral end portion of the semiconductor wafer on the surface on which the semiconductor wafer is placed.

  In particular, the semiconductor wafer has an orientation flat or notch region. The outer wall portion is provided corresponding to at least a part of the orientation flat of the semiconductor wafer or the outer peripheral end portion of the notch region.

  A transport tray for a semiconductor wafer according to the present invention is a transport tray for a semiconductor wafer on which a semiconductor wafer on which at least one microstructure having a movable portion is formed is placed. In addition to being bonded to a glass substrate provided on the substrate, the substrate is conveyed through the glass substrate. The transport tray for semiconductor wafer is provided with a base portion on which a porous layer is provided on the front surface on which a semiconductor wafer is placed via a glass substrate, and the back surface is vacuum-sucked during transport. The base has a through hole that reaches the porous layer. The semiconductor wafer is vacuum-adsorbed together with the base through the porous layer. The porous layer is nanocrystalline silicon.

  Preferably, the semiconductor wafer transfer tray is provided with a shift preventing mechanism for preventing the shift of the semiconductor wafer on the surface side on which the semiconductor wafer is placed.

  Preferably, the semiconductor wafer and the glass substrate have a hole portion, and the base portion has a holding projection portion that fits into the hole portion constituting the deviation prevention mechanism.

  In particular, the semiconductor wafer and the glass substrate have a plurality of holes. The base has a plurality of holding projections provided corresponding to the plurality of holes, respectively.

In particular, the shape cross sections of the hole and the holding projection are formed in a polygonal shape.
Preferably, an outer wall portion that is connected to the base portion and that constitutes a displacement prevention mechanism provided along at least a partial region of the outer peripheral end portion of the semiconductor wafer and the glass substrate on a surface on which the semiconductor wafer is placed via the glass substrate is further provided. Prepare.

  In particular, semiconductor wafers and glass substrates have an orientation flat or notch region. The outer wall portion is provided corresponding to at least a part of the orientation flat of the semiconductor wafer or the outer peripheral end portion of the notch region.

  In the semiconductor wafer transfer tray and the semiconductor wafer transfer system according to the present invention, the shift prevention mechanism for preventing the shift of the semiconductor wafer is provided on the front surface side on which the semiconductor wafer is placed, and the base portion on which the back side is vacuum-sucked during transfer is provided. In addition, since the base portion has a penetrating region, the semiconductor wafer can be stably conveyed while preventing the deviation of the semiconductor wafer.

  Moreover, the transport tray for a semiconductor wafer according to the present invention vacuum-sucks the glass substrate bonded to the semiconductor wafer via the porous layer. With this configuration, even when the semiconductor wafer has a through region, the semiconductor wafer can be stably adsorbed while preventing the semiconductor wafer from shifting.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

(Related technology for explaining the first embodiment)
FIG. 1 is a diagram illustrating an inspection apparatus 30 according to the present invention.

  Referring to FIG. 1, an inspection apparatus 30 according to the present invention includes a rotor unit 33 having a transfer arm 32 for transferring a semiconductor wafer (hereinafter simply referred to as a wafer) as an object to be inspected, an inspection unit 36, and a wafer holding unit. The mechanism 35 is a main part. In this case, the transfer arm 32 disposed in the rotor unit 33 is formed by an articulated link mechanism that can rotate in the horizontal direction and move in the vertical direction, and accommodates a plurality of wafers (see FIG. The wafer taken out from the inside is transported to a wafer holding mechanism 35 together with a semiconductor wafer transport tray, which will be described later, and the wafer inspected by the inspection unit 36 is transported again to the cassette.

  The wafer taken out from the cassette by the transfer arm 32 is placed on a semiconductor wafer transfer tray (hereinafter also simply referred to as a tray), which will be described later, and transferred to the chuck 34 of the wafer holding mechanism 35 together with the tray. The wafer holding mechanism 35 maintains this state and transports it to the inspection unit 36. Then, the inspection unit 36 detects the position of the wafer transported by the position detection camera 38 or the like of the alignment device 37. Alignment is executed based on the detected position information, and position adjustment for bringing a probe needle, which will be described later, into contact with a desired test pad of a device molded on the wafer is performed.

FIG. 2 is a schematic configuration diagram illustrating the inspection unit 36.
Referring to FIG. 2, probe card 50 with probe needle 51 attached is connected to test head 55.

  The test head 55 is a self-supporting columnar body equipped with electrical equipment (not shown) such as an inspection power source applied to the wafer, an electrode pad pattern output unit, and an input unit for taking the output of the electrode pad into the measurement unit. Is formed.

  The wafer holding mechanism 35 includes a vacuum pump 18 that is a suction unit connected to the chuck 34 via a flexible pipe 17.

  The vacuum pump 18 causes the wafer and the semiconductor wafer transfer tray to be vacuum-sucked by the chuck 34, and the state is maintained and inspected.

  FIG. 3 is a diagram illustrating a semiconductor wafer transport tray related to the description of the first embodiment of the present invention.

  FIG. 3A is a view of the semiconductor wafer transfer tray 2 as viewed from above, which is relevant for explaining the first embodiment of the present invention.

  Referring to FIG. 3A, the semiconductor wafer transport tray 2 is formed according to the outer diameter of the wafer so as to cover the wafer 1 and is formed in a shape capable of holding the semiconductor wafer. In this example, as an example, the semiconductor wafer transfer tray 2 is formed in the same disk shape as a wafer having an outer diameter larger than that corresponding to the outer diameter of the wafer.

  FIG. 3B is a cross-sectional view seen from the side when the semiconductor wafer transfer tray 2 related to explaining the first embodiment of the present invention is cut.

  As shown in FIG. 3B, a disk-shaped base portion 2c on which the wafer is placed is connected to the base portion 2c so as to have a concave shape for the purpose of fixing the semiconductor wafer. An outer wall 2b is provided. The inner peripheral surface of the outer wall portion 2b is provided along the shape of the semiconductor wafer and is designed to be held when the semiconductor wafer is placed. The base portion 2c has a surface on which the semiconductor wafer is placed, which is provided according to the outer diameter of the semiconductor wafer, and a back surface for vacuum suction during transportation.

In addition, this semiconductor wafer transfer tray is made of quartz (crystal), polyimide resin, PEEK, cerazole or other engineering plastic, ceramic (for example, alumina (Al ₂ O ₃ ), ticker aluminum (AlN), zirconium oxide (ZrO ₂ ). Zinc oxide (ZnO) and boron nitride (BN, PBN)), quartz, silicon, aluminum, stainless steel, and the like can be used. In particular, silicon, aluminum, or stainless steel has a relatively high thermal conductivity, so it is possible to perform high-precision inspection while suppressing the influence on the semiconductor wafer via silicon, aluminum, or stainless steel during inspection. It is.

  FIG. 4 is a diagram for explaining a case where the wafer is transferred to the wafer holding mechanism 35 by the transfer arm 32.

  FIG. 4A shows a case where the wafer described in FIG. 3 and the tray on which the wafer is placed are placed on the transfer arm 32.

FIG. 4B is a view of the state of being placed on the transfer arm 32 as viewed from above.
As shown in FIG. 4B, the tray 2 is placed on the arms 32a and 32b formed in a Y shape.

  In this example, a case where the wafer 1 is placed on the tray 2 when placing on the transfer arm 32 will be described as an example.

  For example, the semiconductor wafer transfer tray 2 is taken out from a cassette (not shown) storing a semiconductor wafer transfer tray (not shown) by using another transfer arm (not shown), and is first placed on the arms 32a and 32b. Is done.

  Then, alignment adjustment is performed using an alignment device or the like so that wafers taken out from a cassette (not shown) containing a plurality of wafers can be accommodated in the tray 2 using another transfer arm, and then placed on the tray 2. Shall be placed. There are various alignment devices such as a method for performing alignment adjustment by image processing using a camera image and a method for performing alignment adjustment by using a laser. However, since this is a general technique, detailed description thereof will be repeated. Absent.

  Then, the wafer 1 is transferred to the chuck 34 of the wafer holding mechanism 35 as described above with the wafer 1 placed on the tray 2.

FIG. 5 is a diagram for explaining a part of the wafer holding mechanism 35.
As shown in FIG. 5, a Y stage slidably guided by a Y direction guide rail 43 disposed along the Y direction, and a direction orthogonal to the Y direction provided on the Y stage, that is, the X direction. The X stage is slidably guided by an X direction guide rail 42 provided along the X direction, and the chuck 34 is mounted on the X stage so as to be movable up and down (Z direction) and rotatable. In this case, as will be described later, the chuck 34 is formed in a hollow shape having a small hole for suction, and a vacuum pump 18 serving as a suction means is connected to a hollow portion of the chuck 34 via a flexible pipe 17. ing.

FIG. 6 is a diagram illustrating a case where the tray 2 is adsorbed by the vacuum pump 18.
Referring to FIG. 6, the chuck 34 has a plurality of suction holes 3 on which the tray 2 is placed. Then, by operating the vacuum pump 18, the inside of the hollow portion of the chuck 34 becomes negative pressure, and the tray 2 can be sucked and held. Since the tray 2 holds the wafer 1, it can be stably adsorbed in this state.

  Here, a triaxial acceleration sensor, which is a MEMS device molded on the wafer 1, will be described as an example.

FIG. 7 is a view of the triaxial acceleration sensor as viewed from the top surface of the device.
As shown in FIG. 7, the chip TP formed on the wafer 1 has a plurality of pads PD arranged around it. Metal wiring is provided to transmit an electrical signal to or from the pad. And in the center part, the four heavy cone AR which forms a clover type | mold is arrange | positioned.

FIG. 8 is a schematic diagram of a three-axis acceleration sensor.
Referring to FIG. 8, this three-axis acceleration sensor is of a piezoresistive type, and a piezoresistive element as a detection element is provided as a diffused resistor. This piezoresistive acceleration sensor can use an inexpensive IC process and is advantageous in downsizing and cost reduction because the sensitivity does not decrease even if the resistance element as a detection element is formed small.

  As a specific configuration, the central heavy cone AR is supported by four beams BM. The beam BM is formed so as to be orthogonal to each other in the X-axis and Y-axis directions, and includes four piezoresistive elements per axis. Four piezoresistive elements for detecting the Z-axis direction are arranged beside the piezoresistive elements for detecting the X-axis direction. The top surface shape of the heavy cone AR forms a crowbar shape and is connected to the beam BM at the center. By adopting this crowbar type structure, the heavy cone AR can be enlarged and the beam length can be increased at the same time, so that a highly sensitive acceleration sensor can be realized even if it is small. In addition, the peripheral part of the weight body AR is a through region, and the lower region of the beam BM is a hollow region. The weight body AR and the beam BM are movable by the through region and the cavity region. That is, a part of the penetration region and the cavity region is a movable region of the weight body AR and the beam BM.

  It is assumed that the height h2 of the weight body AR is designed to be lower than the height h1 of the support structure (semiconductor substrate) for the weight body connected to the beam BM.

  The principle of operation of this piezoresistive three-axis acceleration sensor is that when the heavy cone receives acceleration (inertial force), the beam BM is deformed and acceleration is caused by a change in the resistance value of the piezoresistive element formed on the surface. It is a mechanism to detect. And this sensor output is set to the structure taken out from the output of the Wheatstone bridge mentioned later incorporated in each 3 axis | shaft independently.

  FIG. 9 is a conceptual diagram for explaining the deformation of the heavy cone and the beam when the acceleration in each axial direction is received.

  As shown in FIG. 9, the piezoresistive element has a property (piezoresistive effect) in which its resistance value changes according to applied strain. In the case of tensile strain, the resistance value increases, and in the case of compressive strain, The resistance value decreases. In this example, X-axis direction detecting piezoresistive elements Rx1 to Rx4, Y-axis direction detecting piezoresistive elements Ry1 to Ry4, and Z-axis direction detecting piezoresistive elements Rz1 to Rz4 are shown as examples.

FIG. 10 is a circuit configuration diagram of a Wheatstone bridge provided for each axis.
FIG. 10A is a circuit configuration diagram of the Wheatstone bridge in the X (Y) axis. The output voltages of the X axis and the Y axis are Vxout and Vyout, respectively.

  FIG. 10B is a circuit configuration diagram of the Wheatstone bridge in the Z axis. The output voltage of the Z axis is Vzout.

  As described above, the resistance values of the four piezoresistive elements on each axis change due to the applied strain. Based on this change, each piezoresistive element outputs, for example, an output of a circuit formed by a Wheatstone bridge on the X axis and Y axis. The acceleration component of each axis is detected as an independently separated output voltage. Note that the above-described metal wiring as shown in FIG. 7 is connected so as to configure the above circuit, and the output voltage for each axis is detected from a predetermined pad.

  In addition, since this triaxial acceleration sensor can detect the DC component of acceleration, it can also be used as an inclination angle sensor for detecting gravitational acceleration.

  In the configuration of the present embodiment, when vacuum suction is performed in the wafer holding mechanism 35, the tray is sucked and transported by the small suction holes of the chuck 34. That is, in the wafer on which the above-described acceleration sensor is formed, since the through region is provided as described with reference to FIG. 8, the wafer cannot be directly transferred by vacuum suction by the vacuum pump 18.

  However, in the description of the first embodiment of the present invention on which the semiconductor wafer is placed, the tray 2 is used, and the tray 2 is penetrated by adsorbing the tray 2 using the small holes for suction of the chuck 34. Since there is no portion, vacuum suction is possible, and the wafer 1 can be stably suctioned without requiring a special apparatus, and for example, a desired inspection can be easily performed in the inspection portion. In this example, the case where the semiconductor wafer is chucked and transported to the inspection unit 36 of the inspection apparatus 30 has been described. However, the present invention is not limited to the inspection apparatus. For example, the semiconductor wafer is chucked to another apparatus by vacuum suction. Then, it is possible to easily and stably chuck and transport using the semiconductor wafer transport tray according to the first embodiment of the present invention.

(Embodiment 1)
FIG. 11 is a diagram illustrating a semiconductor wafer transfer tray 2 # according to the first embodiment of the present invention.

  Referring to FIG. 11, semiconductor wafer transfer tray 2 # is different from semiconductor wafer transfer tray 2 in that a through portion is provided in a predetermined region. Since the other points are the same, detailed description thereof will not be repeated.

  FIG. 12 is a diagram for explaining a plurality of chips TP molded on a general semiconductor wafer 1.

  Referring to FIG. 12, here, for example, a case where a plurality of MEMS devices of a triaxial acceleration sensor are formed in a chip shape is shown. The wafer 1 has a formation region where a microstructure MEMS device having a movable part is formed, and a peripheral region where nothing is formed or a so-called TEG (Test Element Group) pattern for testing a semiconductor device is provided. The configuration is common. Here, a case where a plurality of MEMS device chips TP are provided in the central region excluding the outer peripheral region of the wafer 1 is shown. The outer peripheral region of the wafer 1 is often used as a peripheral region because it is greatly affected by variations in characteristics of MEMS devices. Therefore, in such a case, that is, in the outer peripheral region of the wafer, no through region is provided in the case of molding the MEMS device. Therefore, when it is already known that there is no through area in a certain area of the wafer, it is possible to suck the predetermined area of the wafer by direct vacuum suction.

  In the first embodiment of the present invention, for example, a through portion 4 is provided in a semiconductor wafer transfer tray 2 # corresponding to a predetermined region portion of a wafer in which no through region is provided.

  Accordingly, the vacuum pump 18 can directly vacuum-suck the semiconductor wafer 1 through the suction small holes 3 and the through portions 4.

  Therefore, the tray 2 related to the description of the first embodiment has a configuration in which only the tray 2 is vacuum-sucked, but in this example, since the wafer 1 is also vacuum-sucked, the tray 2 is more fixed. Therefore, it becomes possible to adsorb in a more stable state.

  Note that, here, as an example, a case has been described in which it is found that there is no penetration region in the outer peripheral region of the wafer, and the semiconductor wafer is directly vacuum-sucked by providing a penetration portion in the outer peripheral region. In the case where it is known that there is no through region in the predetermined region (including the formation region), a through part is provided in the other predetermined region portion, and the semiconductor wafer is directly attached according to the same method as described above. Of course, vacuum adsorption is also possible.

(Modification 1 of Embodiment 1)
FIG. 13 is a diagram illustrating a semiconductor wafer transfer tray 2 # a according to the first modification of the first embodiment of the present invention. Here, when the through-hole 4 is provided in the semiconductor wafer transfer tray 2 # a at a position corresponding to a predetermined area where it is known that there is no through-area, it does not correspond to the position of the suction small hole 3 Examples are given. In such a case, the guide through portion 5 is formed in the semiconductor wafer transfer tray 2 to form a path between the position of the suction small hole 3 and the through portion 4 on the back surface side of the tray 2 # a. It is also possible to mold it.

(Modification 2 of Embodiment 1)
In the first embodiment described above, the case where the semiconductor wafer transfer tray having the same disk shape as the wafer having an outer diameter larger than that corresponding to the outer diameter of the wafer has been described. Specifically, a tray configured with a disk-shaped base portion 2c on which a wafer is placed and an outer wall portion 2b provided along the shape of the semiconductor wafer on the inner peripheral surface has been described. In the second modification of the first embodiment, a tray having another shape will be described.

  FIG. 14 is a diagram illustrating a semiconductor wafer transfer tray according to the second modification of the first embodiment of the present invention.

  FIG. 14A is an example of a semiconductor wafer transfer tray according to the second modification of the first embodiment of the present invention. It is the figure which looked at the conveyance tray 20 for semiconductor wafers from the upper part according to the modification 2 of Embodiment 1 of this invention.

  As shown in FIG. 14A, the semiconductor wafer transfer tray 20 includes a base portion 20 a on which the wafer is placed and an outer wall portion provided along at least a partial region of the outer peripheral end portion of the semiconductor wafer 1. 20b. Here, the outer wall portion 20b is not a configuration in which the outer wall portion 2b is provided along the outer peripheral surface of the wafer corresponding to the entire outer peripheral end portion of the semiconductor wafer 1 as compared with the outer wall portion 2b of FIG. This is a configuration provided along the outer peripheral surface of the wafer corresponding to a partial region of the outer peripheral end. Here, two outer wall portions 20b are provided, are provided so as to be opposed to each other via the base portion 20a, and are formed in a shape capable of holding the wafer. Here, it is assumed that the base portion 20a is provided in accordance with the outer diameter of the semiconductor wafer and is formed in a disk-like shape on which the entire wafer surface can be placed.

  FIG. 14B is an example of another semiconductor wafer transport tray according to the second modification of the first embodiment of the present invention. It is the figure which looked at another conveyance tray 20 # for semiconductor wafers according to the modification 2 of Embodiment 1 of this invention from the upper part.

  As shown in FIG. 14B, the semiconductor wafer transfer tray 20 # has a base portion 20a on which the wafer is placed and an outer wall provided along at least a partial region of the outer peripheral end portion of the semiconductor wafer 1. Part 20c. Here, the outer wall portion 20c is not configured to have two outer wall portions opposed to each other as compared with the outer wall portion 20b of FIG. 14A, and the outer wall end portion of the wafer is surrounded by the four outer wall portions 20c. And is formed in a shape capable of holding the wafer. Here, four outer wall portions 20c are shown, but the present invention is not limited to this, and a plurality of outer wall portions may be provided so as to surround the outer peripheral end portion of the wafer along at least one region of the outer peripheral end portion. It is.

  Note that the heavier the semiconductor wafer transfer tray, the more likely it is that the transfer arm will bend and the transfer accuracy will deteriorate, but the outer wall will be partly used to hold the wafer as in this configuration. By limiting the weight, it is possible to reduce the weight of the transport tray for semiconductor wafers and improve the transport accuracy. On the other hand, various ideas for reducing the weight can be considered, but it is possible to design the shape of the transport tray for the semiconductor wafer in view of an increase in processing procedures and an increase in cost.

(Modification 3 of Embodiment 1)
In the first embodiment, the case where the wafer has a circular shape has been described. However, the present invention is not limited to this, and there is a so-called orientation flat (also simply referred to as an orientation flat) or notch type wafer. In the case of a notch type wafer, a part of the wafer is provided with a V-shaped cut (notch) region (notch region).

  FIG. 15 is a diagram illustrating a semiconductor wafer transfer tray corresponding to an orientation flat type wafer.

  In FIG. 15A, an outer wall portion is provided along the outer peripheral surface of the wafer corresponding to the entire region of the outer peripheral end portion of the semiconductor wafer 1 #, and the semiconductor wafer can be held on this. A transport tray 21 is formed.

  The semiconductor wafer transfer tray 21a shown in FIG. 15B is provided with an outer wall portion along the outer peripheral surface of the wafer corresponding to a partial region, not the entire region of the outer peripheral end portion of the semiconductor wafer 1 #. . Further, an outer wall portion 21b is further provided corresponding to a part of a cutting region (orientation flat region) which is a feature of the orientation flat type wafer. The same applies to a notch wafer.

  The outer wall portion 21b is surrounded by the outer wall portion because the length from the center point of the wafer to the inner peripheral portion of the outer wall portion 21b is formed to be shorter than the maximum radial length of the outer peripheral end portion of the wafer. It is also possible to prevent the wafer from rotating in the region.

(Modification 4 of Embodiment 1)
In the fourth modification of the first embodiment, a method for holding the semiconductor wafer transfer tray more stably by vacuum suction will be described.

  FIG. 16 is a diagram illustrating a semiconductor wafer transport tray 21 # corresponding to an orientation flat type wafer according to the fourth modification of the first embodiment of the present invention. Here, the semiconductor wafer transfer tray corresponding to the orientation flat type wafer described in FIG. 15A has been described as an example. However, the present invention is not limited to this, and for example, a tray corresponding to a normal circular wafer. The same applies to.

  Referring to FIG. 16 (a), for example, a plurality of suction holes 3 are provided in a circular shape around the center point O and symmetrically with the center point O on the back surface of the semiconductor wafer transfer tray 21 #. It shall be. Then, in order to widen the suction area to be vacuum-sucked corresponding to the suction small holes 3, a recess 5 # is provided on the back surface of the tray. It is assumed that a plurality of the recessed portions 5 # are provided corresponding to the small holes 3 for suction along the direction of the center point O of the tray.

  FIG. 16B is a view of semiconductor wafer transfer tray 21 # corresponding to the orientation flat type wafer according to the fourth modification of the first embodiment of the present invention as viewed from the side.

  The semiconductor wafer transfer tray 21 # of this example is provided with a recess 5 # on the back surface of the tray in order to expand the suction area corresponding to the suction small holes 3. And this recessed part 5 # shall be provided symmetrically about the center point O. FIG.

  Then, vacuum suction is executed by the vacuum pump through the recess 5 #. At this time, the suction force is applied uniformly around the center point O, so the tray is fixed around the center point O. Thus, the rotation of the tray can also be suppressed.

(Related technology for explaining the second embodiment)
In the first embodiment described above, the semiconductor wafer transfer tray that is fixed by providing the outer wall portion so as to surround the semiconductor wafer has been described.

  In the second embodiment, a case where a semiconductor wafer is fixed by another method will be described.

  FIG. 17 is a diagram for explaining a semiconductor wafer 10 related in explaining the second embodiment of the present invention.

  Referring to FIG. 17, a semiconductor wafer 10 related to the description of the second embodiment of the present invention has a hole 11. Here, two holes 11 are provided as an example. Although the orientation flat type wafer is shown here as the shape of the semiconductor wafer 10, it can be similarly applied to a normal disk-shaped wafer. Further, as described above, generally, a wafer generally has a configuration in which a microstructure MEMS device having a movable portion is formed and a peripheral region in which nothing is formed. For example, it is conceivable that the outer peripheral region of the wafer is used as the peripheral region because, for example, when a MEMS device is molded, the influence of characteristic variation is large. Therefore, when the hole 11 is provided, the peripheral region can be effectively used by providing the hole 11 in the outer peripheral region of the wafer where the MEMS device is difficult to be molded.

  FIG. 18 is a diagram illustrating a semiconductor wafer transfer tray related to the description of the second embodiment of the present invention. Here, the figure which looked at the conveyance tray 26 for semiconductor wafers from the side surface direction is shown.

  Referring to FIG. 18, the semiconductor wafer transfer tray 26 includes a protrusion 100 and a base 25. The semiconductor wafer 10 is placed on the surface side of the base portion 25. At that time, the protrusion 100 provided on the surface of the base portion 25 penetrates the hole portion 11 provided in the semiconductor wafer 10 to fix the semiconductor wafer 10 and the base portion 25.

  Along with this, the tray is vacuum-sucked through the suction small holes 3 by the vacuum pump 18 described above, whereby the tray can be stably held, and the semiconductor wafer can be sucked in a stable state.

  In addition, although the hole 11 mentioned above can be drilled here, it is also possible to make it in the process process of a device.

  FIG. 19 is a diagram for explaining an outline of a process when the triaxial acceleration sensor described in FIGS. 7 and 8 is molded.

  First, as shown in FIG. 19A, here, an SOI wafer (SOI Wafer) having an SOI layer 300 (SOI), a buried oxide film 301 (BOX), and an Si substrate 302 (Si-Sub) is shown. It is. Then, a circuit pattern of the sensor is formed by a photolithography process. In general, a photoresist is dropped onto the wafer surface, and ultraviolet light is irradiated to the photoresist through a mask to perform exposure development. Etching is then performed, and a circuit pattern is formed by repeating steps such as resist stripping. In FIG. 19B, after forming an insulating film 305 on the SOI layer, a piezoresistor 306 is formed by ion implantation and patterning of the insulating film. Then, an aluminum wiring 304 is formed and the surface is protected with a passivation film 303 (SiN). Here, in FIG. 19C, the upper side of the gap portion between the weight of the SOI layer and the beam and the fixed frame portion is etched up to the BOX layer by Si Deep RIE technology. Next, in FIG. 19 (d), the structure is released by etching the substrate side from the back surface to the BOX layer by the Si Deep RIE technique, and finally etching the BOX layer from the back surface of the gap portion and the lower part of the Si substrate. The case is shown.

  According to the above process, the weight body, the beam, and the fixed frame portion shown in FIG. 8 are molded.

  Using this Si Deep RIE technology, in the peripheral region where nothing is formed on the semiconductor wafer, it is possible to mold the hole 11 together with the above-described weight body, beam, and fixed frame by etching from the front and back surfaces. is there. Specifically, in the photolithography process, the same shape as the hole 11 is created on the mask, and in the photolithography process, the same shape as the hole 11 is baked on the resist attached to the substrate to develop the resist. After that, the hole 11 can be formed with high accuracy by etching the substrate from the front surface and the back surface by the Si Deep RIE technique. As a result, there is no need to provide a special device or a special process for providing a hole, and the hole 11 can be easily formed because the hole 11 is also formed at the same time as the acceleration sensor is formed. It is. Moreover, it is possible to form the hole 11 with high accuracy by Si Deep RIE technology, which is advantageous in terms of cost.

  Here, the case where the penetrating hole portion 11 and the protruding portion 100 are fitted is described as an example, but the case where the penetrating hole portion 11 is not penetrating may be used. For example, the same effect can be expected if the non-through hole 11 and the protrusion 100 are fitted. Moreover, as for the shape of the hole of the hole 11 and the shape of the protrusion 100, the circular hole 11 and the protrusion 100 can be formed as an example. The shape can also be a polygon.

  FIG. 20 is a diagram for explaining another semiconductor wafer 10 # related in explaining the second embodiment of the present invention.

  Referring to FIG. 20, another semiconductor wafer 10 # related to the description of the second embodiment of the present invention has a hole 11 #. Here, two holes 11 # are provided as an example. Unlike the hole 11 described with reference to FIG. 17, the hole 11 # is molded with a triangular cross-sectional shape as an example of a polygonal shape. Further, it is assumed that the protrusion is molded with a triangular cross-sectional shape so as to be fitted to the hole 11 #. As a result, when the protrusion and the hole are fitted to each other, the polygonal corner portion is caught as compared with the circular shape, so that the rotation in the relationship between the semiconductor wafer 10 and the base portion 25 can be further suppressed. it can.

  Note that the size of the base portion 25 can be made smaller than the size of the semiconductor wafer. Specifically, it is possible to design such that the area is smaller than the area of the semiconductor wafer, for example, larger than the area where the microstructure is formed. Thereby, alignment adjustment of the semiconductor wafer can be easily executed using a notch or a so-called orientation flat of the semiconductor wafer.

  In the above description, the case where the holes 11 and 11 # are provided in the outer peripheral region excluding the central region where the device is molded has been described. However, the positions of the holes 11 and 11 # are formed in arbitrary regions. It is also possible to obtain the same effect as described above by providing corresponding protrusions. It is also possible to design so that a hole and a corresponding protrusion are provided using a part of the region where the device is molded.

(Embodiment 2)
FIG. 21 is a diagram illustrating a semiconductor wafer transfer tray 27 according to the second embodiment of the present invention.

  Referring to FIG. 21, semiconductor wafer transfer tray 27 is different from semiconductor wafer transfer tray 26 in that base portion 25 is replaced with base portion 25 #. The base portion 25 # is different from the base portion 25 in that a penetration portion is provided in a predetermined region. Since the other points are the same, detailed description thereof will not be repeated.

  As described above, when it is known that a predetermined area of the wafer does not have a penetrating area in advance, the predetermined area of the wafer can be sucked by vacuum suction.

  In the second embodiment of the present invention, for example, the through portion 4 is provided in the semiconductor wafer transfer tray 27 corresponding to a predetermined region portion of the wafer in which no through region is provided.

  Accordingly, the vacuum pump 18 can directly vacuum-suck the semiconductor wafer 1 # via the suction small hole 3 and the through portion 4.

  Therefore, it can be held more stably than the related art for explaining the second embodiment, and can be adsorbed in a more stable state.

  Note that, here, as an example, a case has been described in which when there is no through region in the outer peripheral region of the wafer, a semiconductor wafer is directly vacuum-sucked by providing a through region in the outer peripheral region. In the case where it is known that there is no through region in the predetermined region (including the formation region), a through region is provided in the other predetermined region portion, and the semiconductor wafer is directly attached according to the same method as described above. Of course, vacuum adsorption is also possible.

(Modification 1 of Embodiment 2)
FIG. 22 is a diagram illustrating a semiconductor wafer transfer tray 28 according to the first modification of the second embodiment of the present invention. Here, an example of the case where the through hole 4 is provided in the semiconductor wafer transfer tray 28 at a position corresponding to a predetermined area where it is known that there is no through area does not correspond to the position of the suction small hole 3. Is listed. In such a case, the guide penetrating portion 5 is formed in the semiconductor wafer transfer tray 28 so as to form a path between the position of the suction small hole 3 and the penetrating portion 4 on the back surface side of the base portion 25 # a. It is also possible to mold so as to form.

  In the above embodiment, the MEMS device of the triaxial acceleration sensor has been mainly described. However, the present invention is not limited to this, and the present invention can be applied to a MEMS device that does not have a through region, for example.

For example, a microstructure having a thin film movable portion having a membrane structure will be described.
FIG. 23 is a diagram illustrating a case where a membrane structure is used for the irradiation window of the electron beam irradiator.

  As shown in FIG. 23, a part of an irradiation window 80 through which an electron beam EB is emitted from the vacuum tube 81 to the atmosphere is shown. As shown in the enlarged cross-sectional structure, a thin film membrane is shown. Structure is adopted. In FIG. 23, a membrane is formed on a single material and only one membrane structure is shown. However, when a multilayer film structure is formed with a plurality of materials, or a plurality of membrane structures are arranged in an array. It is also possible to use an arranged irradiation window.

  When a semiconductor wafer on which a MEMS device having such a thin film membrane is molded is vacuum-sucked, the thin film may be sucked beyond the movable region of the thin film due to the suction force, and cracks may occur.

  Therefore, as in the embodiment of the present invention, by providing a tray so that the thin film portion is not directly sucked by vacuum, the tray can be stably held and the semiconductor wafer can be transported safely.

  In the above-described second embodiment, the description has been given of the semiconductor wafer transfer tray in which the holding protrusion and the hole are fitted and the wafer can be stably transferred. However, the present invention is not limited to this, and the first embodiment described above. For example, by combining the method described in the modification and a configuration in which an outer wall portion is provided along the outer peripheral surface of the wafer, the wafer can be transported more stably.

(Embodiment 3)
In the first and second embodiments described above, the configuration in which the semiconductor wafer and the surface of the semiconductor wafer transfer tray are placed in close contact over the entire region has been described. Depending on the structure, it is necessary to devise further.

  FIG. 24 is a schematic diagram of a triaxial acceleration sensor different from the triaxial acceleration sensor described in FIG.

  Referring to FIG. 24, the triaxial acceleration sensor shown here has a weight body in which the height h2 of the weight body AR is connected to the beam BM as compared with the triaxial acceleration sensor described in FIG. The difference is that the AR support structure (semiconductor substrate) is designed to have the same height as the height h1. The other parts are the same. In the case of the three-axis acceleration sensor having the structure, since the height of the support structure of the weight body AR and the height of the weight body AR that is a movable part are designed to be approximately the same height, it is placed on the semiconductor wafer transfer tray. In such a case, there is a possibility that the weight body AR serving as the movable portion may be close to or in contact with the semiconductor wafer transfer tray. For example, the inspection apparatus 30 inspects the weight AR placed on the semiconductor wafer transfer tray. In this case, there is a possibility that the movable part does not move normally and a desired inspection cannot be performed.

  FIG. 25 is a diagram illustrating a semiconductor wafer transfer tray 2 # p according to the third embodiment of the present invention.

  Referring to FIG. 25A, the semiconductor wafer transfer tray 2 # p is formed on the surface portion of the base portion on which the semiconductor wafer is placed, as compared with the semiconductor wafer transfer tray 2 # described in FIG. On the other hand, it is different in that it is molded into a shape (counterbore region) that has been counterbored. Since the other points are the same as those described with reference to FIG. 11, detailed description thereof will not be repeated.

  Referring again to FIG. 25A, in this example, when the chip TP is provided in the central region or the like in the semiconductor wafer as described in FIG. 12, the surface of the tray 2 # p facing the chip TP is A counterbore area having a predetermined depth formed in a concave shape is formed, and the counterbore area is not formed on the outer peripheral area where the chip TP is not provided, that is, on the surface of the tray 2 # p facing the peripheral area. That is, a counterbore area is formed on the surface of the tray 2 # p facing the area inside the peripheral area.

  With this configuration, as shown in FIG. 25 (b), for example, the weight AR, which is a movable part of the three-axis acceleration sensor, has a predetermined gap between the counterbore processing on the semiconductor wafer transfer tray 2 # p. Since it is provided, contact with the surface of the semiconductor wafer transfer tray 2 # p can be avoided. Therefore, a desired inspection can be performed also in the inspection apparatus 30 described above.

  Even in this configuration, the semiconductor wafer can be stably provided by directly vacuum-sucking the semiconductor wafer by providing a through-hole in the semiconductor wafer transfer tray 2 # p in a region facing the outer peripheral region where the through-region of the semiconductor wafer is not provided. It is possible to suck the wafer.

(Modification 1 of Embodiment 3)
FIG. 26 is a diagram illustrating a semiconductor wafer transport tray 2 # q according to the first modification of the third embodiment of the present invention.

  Referring to FIG. 26 (a), here, semiconductor wafer transfer tray 2 # q is sometimes subjected to counterboring processing according to a predetermined pattern on the surface portion of the base portion on which the semiconductor wafer is placed. It is shown. In the configuration of the semiconductor wafer transport tray 2 # p described above with reference to FIG. 25A, the entire surface where the chip TP is provided, for example, the central region is opposed to the surface portion of the base portion on which the semiconductor wafer is placed. Although it was a structure in which the entire part was counterbored, this structure is a structure in which the surface part of the base part facing the movable part in the region where the chip TP is provided is counterbored. is there.

  With this configuration, when the MEMS device is a triaxial acceleration sensor, the surface portion of the base portion facing the weight body AR is subjected to counterboring as shown in FIG. As a result, the support structure portion of the weight body AR is in a state of being close to or in contact with the surface portion of the base portion. Therefore, as compared with the configuration of FIG. 25, the semiconductor wafer can be transported while suppressing the deflection of the semiconductor wafer according to its own weight.

Other points are the same as in FIG.
(Modification 2 of Embodiment 3)
In the above-described third embodiment and its modification, the semiconductor wafer transfer tray has been described with respect to the configuration in which the counterbore processing is performed using the semiconductor wafer transfer tray described in the first embodiment, but the present invention is not limited thereto. Of course, it is possible to adopt a configuration in which the counterbore processing is performed using the semiconductor wafer transfer tray described in the second embodiment.

  FIG. 27 is a diagram illustrating a semiconductor wafer transport tray 26 # according to the second modification of the third embodiment of the present invention.

  Referring to FIG. 27, a semiconductor wafer transfer tray 26 # is constituted by a protrusion 100 and a base portion 25p. Although not shown, the semiconductor wafer 10 described with reference to FIG. 17 is placed on the base portion 25p as an example. At that time, the protrusion 100 provided on the surface of the base portion 25p passes through the hole portion 11 provided in the semiconductor wafer 10, and the semiconductor wafer 10 and the base portion 25p are fixed as described above.

  And the case where the counterbore process was given to the surface part of the base part 25p in which a semiconductor wafer is mounted according to a predetermined pattern is shown. Specifically, as described in FIG. 26B, the surface portion of the base portion facing the weight body AR is subjected to counterboring. Thereby, the support structure portion of the weight body AR is in a state of being close to or in contact with the surface portion of the base portion. Therefore, as described above, the semiconductor wafer can be transported while suppressing the deflection of the semiconductor wafer according to its own weight.

  Further, as described with reference to FIGS. 21 and 22, a case is shown in which the through portion 4 is provided in the base portion 25p and the semiconductor wafer 1 is directly vacuum-sucked by a vacuum pump. Moreover, the structure which provided the guide penetration part 5 so that the path | route between the penetration parts 4 may be formed is shown.

  Along with this, the semiconductor wafer transfer tray is stably held by vacuum suction through the suction small holes 3 by the vacuum pump 18 described above, and the semiconductor wafer can be sucked in a stable state.

  The semiconductor wafer transfer tray described in the above embodiment can be formed by machining such as a drill for processing the penetrating portion or the like, but can also be formed using the process steps of the device. It is.

  FIG. 28 is a diagram for explaining the outline of the process for molding the semiconductor wafer transfer tray described in FIG.

  Here, a process for processing the back side of the semiconductor wafer transfer tray is shown.

  Specifically, referring to FIG. 28A, etching is performed while protecting the Si substrate (Si-Sub) with two masks in order to process the back side of the tray. Specifically, the base portion 25p is covered with a mask MSK1 for forming the penetrating portion 4 and a mask MSK2 for forming the guide penetrating portion.

  Next, referring to FIG. 28 (b), here, dry etching is performed on the region of the base portion 25p, which is an Si substrate not covered with the mask MSK1 and the mask MSK2, and the penetrating portion 4 is formed. The Then, the mask MSK1 is removed.

Next, referring to FIG. 28 (c), here, a guide through portion is formed by performing dry etching on the region of the base portion 25p, which is a Si substrate not covered with the mask MSK2. Become. As an example of these two masks, a normal photoresist can be used for the mask MSK1. Further, as the mask MSK2, in addition to a permanent resist such as polyimide, a hard mask such as SiO ₂ , SiN, or Ti can be used.

  Then, referring to FIG. 28D, the Si substrate is thermally oxidized to cover the entire base portion 25p with a silicon oxide film. Then, a processing process is performed on the surface of the base portion 25p.

  Referring to FIG. 28E, the silicon oxide film is etched by wet etching while being protected by a resist mask (not shown) except for the region where the counterbore region is formed.

  Next, referring to FIG. 28 (f), using the silicon oxide film as a mask, the base portion 25p, which is a Si substrate, is wet-etched using a so-called TMAH aqueous solution, and the surface of the base portion 25p facing the movable portion. The counterbore area is molded.

  Then, referring to FIG. 28G, it becomes possible to mold the base portion 25p of the semiconductor wafer transfer tray described in FIG. 27 by peeling the silicon oxide film with hydrofluoric acid.

  Then, it is possible to mold the semiconductor wafer transfer tray 26 # by providing the protruding portion 100 with the base portion 25p.

  By molding the transfer tray for semiconductor wafers by this process, it is possible to improve the processing accuracy and to easily mold the tray.

(Embodiment 4)
The semiconductor wafer according to the fourth embodiment of the present invention has a structure in which a glass substrate is bonded, unlike the semiconductor wafer described in the first to third embodiments. In a device provided with many through holes such as the acceleration sensor described above, a glass substrate or the like may be bonded to maintain the strength of the device. Therefore, in the fourth embodiment, a semiconductor wafer transfer tray for transferring a semiconductor wafer having a structure in which a glass substrate is bonded will be described.

  FIG. 29 is a diagram illustrating a semiconductor wafer transfer tray according to the fourth embodiment of the present invention.

  Referring to FIG. 29, first, glass substrate 1a is sandwiched between semiconductor wafer 1 and semiconductor wafer transfer tray 2r, and semiconductor wafer 1 and glass substrate 1a are joined. The glass substrate 1a to be bonded here has the same shape and the same size as the semiconductor wafer 1. Therefore, for example, when the shape of the semiconductor wafer is circular, the same shape is used for the glass substrate, and when the shape of the semiconductor wafer is orientation flat or notch type, Are also used in the same shape.

  The semiconductor wafer transport tray 2r according to the fourth embodiment of the present invention has a configuration in which a porous layer to be described later is further provided on the surface side of the base portion as compared with the semiconductor wafer transport tray 2 described in FIG. It differs in that it has a configuration in which a through portion 4 # is provided between a certain point and the porous layer from the back side of the base portion. And it becomes possible to vacuum-suck the glass substrate 1a through this porous layer.

  For example, in the MEMS device of the three-axis acceleration sensor molded on the semiconductor wafer 1 described above, a through region is provided, and in the region where the MEMS device is molded, the semiconductor wafer 1 is directly vacuum-sucked by the through region. However, in the present specification in which a glass substrate is bonded, vacuum suction is possible through the glass substrate, and it is considered that the problem of conveyance is solved. However, the glass substrate is usually very thin, and when the wafer is directly placed on the mounting table and sucked through the glass substrate, the glass substrate and the wafer are moved along the pattern of the suction holes on the mounting table. There is a problem that the device is deformed and an accurate test of the device cannot be obtained. However, by performing vacuum suction through a tray having a porous layer, the difference in suction force depending on the pattern of the small holes for suction is made uniform.

Here, the generation of the porous layer will be described.
FIG. 30 is a diagram illustrating the generation of the porous layer NCS.

  In order to form a porous nanocrystalline silicon layer that is the porous layer NCS on the one surface side of the substrate portion 2r that is a single crystal silicon substrate, an anodic oxidation treatment is performed.

  Referring to FIG. 30, in the anodizing process, an outer wall 41 is provided around the surface portion of the substrate portion 2r to be anodized using a sealing material, and an electrolytic solution 45 is injected inside the outer wall. Thus, the surface portion of the processing target is configured to touch the electrolytic solution 45.

  Next, in the electrolytic solution 45, the platinum electrode 44 is disposed so as to face the surface of the substrate portion 2r. Further, the energizing electrode 42 is attached to the back side of the substrate portion 2r, and the lead wire connected to the energizing electrode 42 is connected to the plus side of the current source 200, and the platinum electrode 44 is connected to the minus side of the current source 200. . With the energizing electrode 42 as an anode and the platinum electrode 44 as a cathode, a current having a predetermined current density is passed from the current source 200 between the energizing electrode 42 and the platinum electrode 44 for a predetermined energizing time.

  By such anodizing treatment, a thermal insulation layer NCS having a substantially constant thickness is formed inside the outer wall 41 at the surface portion of the substrate portion 2r. Moreover, as the electrolytic solution 45 used for the anodizing treatment, for example, a mixed solution (HF / ethanol solution) in which a 55 wt% hydrogen fluoride aqueous solution and ethanol are mixed at a ratio of 1: 1 is used. As the sealing material, for example, a sealing material made of a fluororesin can be used.

  According to this method, a porous nanocrystalline silicon layer can be formed on the surface side of the substrate portion 2r.

  By vacuum-adsorbing the glass substrate 1a through the porous nanosilicon layer, the glass substrate in contact with the porous layer is uniformly chucked. That is, vacuum suction is not performed on one point of the glass substrate, but vacuum suction is performed on the entire surface in contact with the porous layer of the glass substrate. Unintentional displacement does not occur with respect to the glass substrate and the semiconductor wafer due to the difference in the depending adsorption force. Therefore, individual microstructures formed on the semiconductor wafer are not affected by unintended displacement, and a stable and highly reliable test result can be obtained over the entire surface of the semiconductor wafer.

  Here, the MEMS device of the triaxial acceleration sensor having the penetrating region has been described as an example, but the present invention can be similarly applied to another MEMS device.

  In addition, it is possible to provide a semiconductor wafer more stably by providing an outer wall portion as described in the first embodiment in contrast to the configuration described in the fourth embodiment. As described above, it is also possible to provide a hole and a protrusion and fit the semiconductor wafer and the semiconductor wafer transfer tray to carry them. In this case, the glass substrate also needs to be provided with a hole similar to that of the semiconductor wafer and fitted with a protrusion provided on the semiconductor wafer transfer tray side.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

FIG. 1 is a diagram illustrating an inspection apparatus 30 according to the present invention. 3 is a schematic configuration diagram illustrating an inspection unit 36. FIG. It is a figure explaining the conveyance tray for semiconductor wafers relevant in describing Embodiment 1 of this invention. 6 is a diagram illustrating a case where the wafer is transferred to the wafer holding mechanism 35 by the transfer arm 32. FIG. FIG. 4 is a diagram illustrating a part of a wafer holding mechanism 35. It is a figure explaining the case where the tray 2 is adsorbed by the vacuum pump 18. It is the figure seen from the device upper surface of a 3-axis acceleration sensor. It is the schematic of a 3-axis acceleration sensor. It is a conceptual diagram explaining the deformation | transformation of the heavy cone and beam at the time of receiving the acceleration of each axial direction. It is a circuit block diagram of the Wheatstone bridge provided with respect to each axis. It is a figure explaining the conveyance tray 2 # for semiconductor wafers according to Embodiment 1 of this invention. It is a figure explaining several chip | tip TP shape | molded by the general semiconductor wafer 1. FIG. It is a figure explaining conveyance tray 2 # a for semiconductor wafers according to the modification 1 of Embodiment 1 of this invention. It is a figure explaining the conveyance tray for semiconductor wafers according to the modification 2 of Embodiment 1 of this invention. It is a figure explaining the conveyance tray for semiconductor wafers corresponding to an orientation flat type wafer. It is a figure explaining the conveyance tray for semiconductor wafers corresponding to the orientation flat type | mold wafer according to the modification 4 of Embodiment 1 of this invention. It is a figure explaining the semiconductor wafer 10 relevant in describing Embodiment 2 of this invention. It is a figure explaining the conveyance tray for semiconductor wafers relevant in describing Embodiment 2 of this invention. It is a figure explaining the outline of the process at the time of shape | molding the triaxial acceleration sensor demonstrated in FIG. 7 and FIG. It is a figure explaining other semiconductor wafer 10 # relevant in describing Embodiment 2 of this invention. It is a figure explaining the conveyance tray 27 for semiconductor wafers according to Embodiment 2 of the present invention. It is a figure explaining the conveyance tray 28 for semiconductor wafers according to the modification 1 of Embodiment 2 of this invention. It is a figure explaining the case where the membrane structure is used for the irradiation window of an electron beam irradiator. FIG. 9 is a schematic diagram of a triaxial acceleration sensor different from the triaxial acceleration sensor described in FIG. 8. It is a figure explaining conveyance tray 2 # p for semiconductor wafers according to Embodiment 3 of the present invention. It is a figure explaining conveyance tray 2 # q for semiconductor wafers according to the modification 1 of Embodiment 3 of this invention. It is a figure explaining conveyance tray 26 # for semiconductor wafers according to the modification 2 of Embodiment 3 of this invention. It is a figure explaining the outline of the process which shape | molds the conveyance tray for semiconductor wafers demonstrated in FIG. It is a figure explaining the conveyance tray for semiconductor wafers according to Embodiment 4 of this invention. It is a figure explaining the production | generation of the porous layer NCS.

Explanation of symbols

  1, 1 #, 10, 10 # semiconductor wafer, 2, 2 #, 2 # a, 2 # p, 2 # q, 2r, 20, 21, 25p, 26 to 28 Semiconductor wafer transfer tray, 3 suction small Hole, 4, 11, 11 # Hole, 17 Pipe, 18 Vacuum pump, 30 Inspection device, 32 Transfer arm, 33 Rotor, 34 Chuck, 35 Wafer holding mechanism, 36 Inspection unit, 37 Alignment device, 50 Probe card , 51 probe needle, 55 test head, 80 irradiation window, 100 protrusion.

Claims (25)

A semiconductor wafer transfer tray on which a semiconductor wafer on which at least one microstructure having a movable part is molded is placed,
A misalignment prevention mechanism for preventing misalignment of the semiconductor wafer is provided on the front surface side on which the semiconductor wafer is placed, and includes a base portion on which the back surface side is vacuum-sucked during transportation,
The base has a through portion provided in a peripheral region where the microstructure of the semiconductor wafer is not molded,
The semiconductor wafer transfer tray, wherein the semiconductor wafer is vacuum-sucked together with the base portion through the penetrating portion. The semiconductor wafer has a hole,
2. The semiconductor wafer transfer tray according to claim 1, further comprising a holding projection provided on a surface side of the base portion and fitted into the hole portion constituting the deviation prevention mechanism.   The semiconductor wafer transfer tray according to claim 2, wherein the hole is provided in a region where the microstructure is not molded. The semiconductor wafer has a plurality of the holes,
4. The semiconductor wafer transfer tray according to claim 2, wherein the base portion further includes a plurality of the holding projections provided corresponding to the plurality of holes, respectively. 5.   5. The semiconductor wafer transfer tray according to claim 2, wherein the hole section and the holding protrusion have a polygonal cross section.   The surface side of the base has a counterbore region having a predetermined depth that is provided facing a region inside the peripheral region of the semiconductor wafer where the microstructure is not molded, and is formed in a concave shape by counterbore processing. The conveyance tray for semiconductor wafers as described in any one of Claims 1-5.   7. The semiconductor wafer transfer tray according to claim 6, wherein the counterbore region formed on the surface side of the base portion is provided opposite to a region where the movable portion of the microstructure is formed on the semiconductor wafer.   The semiconductor wafer is formed with at least one microstructure having a movable portion provided with a penetrating region serving as a movable region, and the hole is simultaneously molded by a step of forming the penetrating region. The conveyance tray for semiconductor wafers as described in any one of 2-7.   9. The semiconductor wafer transfer tray according to claim 1, wherein a size of the semiconductor wafer transfer tray is smaller than the semiconductor wafer and larger than a region where the microstructure is formed. The semiconductor wafer transfer tray is vacuum-sucked along the shape of a vacuum suction guide for performing vacuum suction,
The back surface of the base portion has a recess provided corresponding to the vacuum suction guide in order to widen the suction area vacuum-sucked between the vacuum suction guide and the back surface. The transfer tray for semiconductor wafers as described in any one of Claims.   The outer wall part which comprises the said slip prevention mechanism connected with the said base part, and was provided along the at least one part area | region of the outer peripheral edge part of the said semiconductor wafer on the surface which mounts the said semiconductor wafer. Transport tray for semiconductor wafers.   The surface side of the base has a counterbore region having a predetermined depth that is provided facing a region inside the peripheral region of the semiconductor wafer where the microstructure is not molded, and is formed in a concave shape by counterbore processing. The semiconductor wafer transfer tray according to claim 11.   13. The semiconductor wafer transfer tray according to claim 12, wherein the counterbore region formed on the surface side of the base portion is provided opposite to a region where the movable portion of the microstructure is formed on the semiconductor wafer. The semiconductor wafer has an orientation flat or notch region,
The said outer wall part is a conveyance tray for semiconductor wafers as described in any one of Claims 11-13 provided corresponding to at least one part of the outer periphery edge part of the said orientation flat or notch area | region of the said semiconductor wafer. A semiconductor wafer transfer tray on which a semiconductor wafer on which at least one microstructure having a movable part is molded is placed,
The semiconductor wafer is bonded to a glass substrate provided between the semiconductor wafer transfer tray and transferred via the glass substrate,
The semiconductor wafer transport tray is provided with a base portion on which a porous layer is provided on the front surface side on which the semiconductor wafer is placed via the glass substrate, and the back surface side is vacuum-adsorbed during transport,
The base has a through hole reaching the porous layer;
The semiconductor wafer transfer tray, wherein the semiconductor wafer is vacuum-sucked together with the base through the porous layer.   16. The semiconductor wafer transport tray according to claim 15, wherein the semiconductor wafer transport tray is provided with a shift prevention mechanism for preventing the semiconductor wafer from shifting on a surface side on which the semiconductor wafer is placed. The semiconductor wafer and the glass substrate have holes.
17. The semiconductor wafer transfer tray according to claim 15, wherein the base portion has a holding projection that fits into the hole that constitutes the misalignment prevention mechanism.   The semiconductor wafer transfer tray according to claim 17, wherein the hole is provided in a region where the microstructure is not molded. The semiconductor wafer and the glass substrate have a plurality of the holes,
19. The semiconductor wafer transfer tray according to claim 17, wherein the base has a plurality of the holding projections provided corresponding to the plurality of holes, respectively.   The semiconductor wafer transfer tray according to any one of claims 17 to 19, wherein the hole and the holding protrusion have a polygonal cross section.   The semiconductor wafer is formed with at least one microstructure having a movable part provided with a penetrating region serving as a movable region, and the hole is simultaneously formed by a step of forming the penetrating region. The transfer tray for semiconductor wafers as described in any one of 17-20.   The said semiconductor wafer conveyance tray is a semiconductor wafer conveyance tray as described in any one of Claims 15-21 smaller than the said semiconductor wafer and a glass substrate, and larger than the area | region in which the said microstructure is formed.   An outer wall part connected to the base part and constituting the deviation preventing mechanism provided along the at least part of the outer peripheral edge of the semiconductor wafer and the glass substrate on the surface on which the semiconductor wafer is placed via the glass substrate The semiconductor wafer transfer tray according to claim 15, further comprising: The semiconductor wafer and the glass substrate have an orientation flat or notch region,
24. The semiconductor wafer transfer tray according to claim 23, wherein the outer wall portion is provided corresponding to at least a part of an outer peripheral end portion of the orientation flat or notch region of the semiconductor wafer.   The semiconductor wafer transfer tray according to claim 15, wherein the porous layer is made of nanocrystalline silicon.

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