JP6494451B2 - Chuck table and cleaning device - Google Patents

Chuck table and cleaning device Download PDF

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Publication number
JP6494451B2
JP6494451B2 JP2015135409A JP2015135409A JP6494451B2 JP 6494451 B2 JP6494451 B2 JP 6494451B2 JP 2015135409 A JP2015135409 A JP 2015135409A JP 2015135409 A JP2015135409 A JP 2015135409A JP 6494451 B2 JP6494451 B2 JP 6494451B2
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wafer
chuck table
adhesive tape
annular frame
held
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JP2017017286A (en
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秀次 新田
秀次 新田
直功 瓜田
直功 瓜田
惇 八木原
惇 八木原
和也 江角
和也 江角
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Disco Corp
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Disco Corp
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Priority to TW105117412A priority patent/TWI681485B/en
Priority to KR1020160082689A priority patent/KR102435772B1/en
Priority to CN201610522459.7A priority patent/CN106340483B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)

Description

本発明は、チャックテーブル及び該チャックテーブルを利用した洗浄装置に関する。   The present invention relates to a chuck table and a cleaning apparatus using the chuck table.

半導体ウェーハ等のウェーハは、電気機器の軽薄短小化に伴いより薄く小さいデバイスチップへと加工される。ウェーハは、研削装置でその裏面が研削されて１００μｍ以下に薄化され、切削装置、レーザー加工装置等で個々のデバイスチップに分割される。   Wafers such as semiconductor wafers are processed into thinner and smaller device chips as the electrical equipment becomes lighter and thinner. The wafer is ground on its back by a grinding machine and thinned to 100 μm or less, and is divided into individual device chips by a cutting machine, a laser processing machine or the like.

薄化されたウェーハを切削加工する際、ハンドリング性を高めるため、環状フレームに粘着テープであるダイシングテープでウェーハを固定したウェーハユニットを形成する。そして、ウェーハユニットのダイシングテープ越しにチャックテーブルでウェーハを保持するが、ポーラスセラミックスで保持面を構成したチャックテーブルを用い、均一に偏りなく吸引力を作用させてウェーハを保持するのが一般的である。   When the thinned wafer is cut, a wafer unit is formed in which the wafer is fixed to the annular frame with a dicing tape that is an adhesive tape in order to improve handling. The wafer is held by the chuck table over the dicing tape of the wafer unit, but it is common to hold the wafer by applying a suction force evenly using a chuck table with a holding surface made of porous ceramics. is there.

しかしながら、保持面がポーラスセラミックスから形成されるチャックテーブルでは、チャックテーブルからウェーハユニットを離脱させる際に発生する静電気の抑制に限度があった。   However, in the chuck table whose holding surface is made of porous ceramics, there is a limit to the suppression of static electricity generated when the wafer unit is detached from the chuck table.

半導体デバイスの微細化、高集積化に伴い、半導体デバイス製造プロセスで発生する静電気によるデバイスの損傷対策は非常に重要である。そこで、絶縁体と導電体からなる静電気の発生を抑制するチャックテーブルが特開２０１０−２８３２８６号公報に開示されている。   With miniaturization and high integration of semiconductor devices, measures against damage to devices due to static electricity generated in the semiconductor device manufacturing process are very important. Therefore, a chuck table that suppresses generation of static electricity composed of an insulator and a conductor is disclosed in Japanese Patent Laid-Open No. 2010-283286.

特開２０１０−２８３２８６号公報JP 2010-283286 A

しかし、特開２０１０−２８３２８６号公報に開示されたチャックテーブルは、吸引保持部がポーラス状ではなく吸引用の複数の溝を保持部に形成してウェーハを吸引保持しているため、非常に薄いウェーハの場合、吸引するだけでウェーハが溝に倣って変形し破損してしまう恐れがあった。   However, the chuck table disclosed in Japanese Patent Application Laid-Open No. 2010-283286 is very thin because the suction holding portion is not porous and has a plurality of suction grooves formed in the holding portion to suck and hold the wafer. In the case of a wafer, there is a possibility that the wafer may be deformed and damaged following the groove only by suction.

本発明はこのような点に鑑みてなされたものであり、その目的とするところは、非常に薄いウェーハの場合にもウェーハを破損することなく吸引保持可能なチャックテーブルを提供することである。   The present invention has been made in view of these points, and an object of the present invention is to provide a chuck table that can be sucked and held without damaging the wafer even in the case of a very thin wafer.

請求項１記載の発明によると、環状フレームの開口を覆うように該環状フレームに貼着された粘着テープでウェーハが支持されたウェーハユニットを保持するチャックテーブルであって、該環状フレームの開口より小さくウェーハの直径より大きく形成され、平坦な底面を有する凹部と、該粘着テープを介して保持したウェーハを囲繞する領域の該凹部の該底面又は内周面に形成された複数の吸引孔と、該複数の吸引孔を吸引源に連通する吸引路と、を備え、該ウェーハユニットを保持する際は、該粘着テープで覆われた該凹部に負圧を発生させ、該粘着テープを介してウェーハを該底面で吸引保持することを特徴とするチャックテーブルが提供される。   According to the first aspect of the present invention, there is provided a chuck table for holding a wafer unit in which a wafer is supported by an adhesive tape attached to the annular frame so as to cover the opening of the annular frame. A recess having a flat bottom surface formed smaller than the diameter of the wafer, and a plurality of suction holes formed in the bottom surface or inner peripheral surface of the recess in a region surrounding the wafer held via the adhesive tape; A suction path that communicates the plurality of suction holes with a suction source, and when holding the wafer unit, a negative pressure is generated in the recess covered with the adhesive tape, and the wafer is passed through the adhesive tape. Is provided on the bottom surface of the chuck table.

請求項２記載の発明によると、環状フレームの開口を覆うように該環状フレームに貼着された粘着テープでウェーハが支持されたウェーハユニットの該ウェーハを洗浄する洗浄装置であって、回転可能に支持された請求項１記載のチャックテーブルと、該チャックテーブルに保持されたウェーハに流体を供給する流体供給手段と、を備えたことを特徴とする洗浄装置が提供される。   According to a second aspect of the present invention, there is provided a cleaning device for cleaning the wafer of a wafer unit in which the wafer is supported by an adhesive tape attached to the annular frame so as to cover the opening of the annular frame, and is rotatable. A cleaning apparatus is provided, comprising: the chuck table according to claim 1 supported; and fluid supply means for supplying fluid to the wafer held by the chuck table.

好ましくは、洗浄装置は、チャックテーブルに保持されたウェーハにイオン化エアを供給する除電手段を更に備えている。   Preferably, the cleaning apparatus further includes a charge removing unit that supplies ionized air to the wafer held on the chuck table.

本発明のチャックテーブルによると、粘着テープで覆う凹部で密閉空間を形成し、この密閉空間に負圧を発生させてウェーハを粘着テープを介して吸引保持するため、強力にウェーハを吸引保持することができる。吸引孔はウェーハから離間した位置に形成されているので、ウェーハを破損することなく凹部の底面である平坦面でウェーハを強力に保持することができる。   According to the chuck table of the present invention, a sealed space is formed by a concave portion covered with an adhesive tape, and a negative pressure is generated in the sealed space to suck and hold the wafer through the adhesive tape. Can do. Since the suction hole is formed at a position separated from the wafer, the wafer can be strongly held by the flat surface which is the bottom surface of the recess without damaging the wafer.

図１（Ａ）はウェーハユニットの斜視図、図１（Ｂ）はウェーハユニットの断面図である。1A is a perspective view of the wafer unit, and FIG. 1B is a cross-sectional view of the wafer unit. 本発明実施形態に係るチャックテーブルを採用したスピンナー洗浄装置の一部破断斜視図である。1 is a partially broken perspective view of a spinner cleaning apparatus employing a chuck table according to an embodiment of the present invention. ウェーハユニットを保持する前の本発明実施形態に係るチャックテーブルの縦断面図である。It is a longitudinal section of a chuck table concerning an embodiment of the present invention before holding a wafer unit. ウェーハユニットを保持した状態のチャックテーブルの縦断面図である。It is a longitudinal cross-sectional view of the chuck table in a state where a wafer unit is held.

以下、本発明の実施形態を図面を参照して詳細に説明する。図１（Ａ）を参照すると、ウェーハユニット１９の斜視図が示されている。図１（Ｂ）はウェーハユニット１９の断面図である。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1A, a perspective view of the wafer unit 19 is shown. FIG. 1B is a cross-sectional view of the wafer unit 19.

半導体ウェーハ（以下、単にウェーハと略称することがある）１１の表面には複数の分割予定ライン（ストリート）１３が格子状に形成されていると共に、分割予定ライン１３で区画された各領域にＩＣ、ＬＳＩ等のデバイス１５が形成されている。   A plurality of scheduled division lines (streets) 13 are formed in a lattice shape on the surface of a semiconductor wafer (hereinafter, simply referred to as a wafer) 11, and an IC is formed in each area partitioned by the division planned lines 13. A device 15 such as an LSI is formed.

ウェーハユニット１９は、環状フレームＦの開口１７を覆うように外周部が環状フレームＦに貼着された粘着テープであるダイシングテープＴにウェーハ１１の裏面が貼着されて構成されている。即ち、ウェーハユニット１９では、ウェーハ１５はダイシングテープＴを介して環状フレームＦに支持されている。   The wafer unit 19 is configured by adhering the back surface of the wafer 11 to a dicing tape T which is an adhesive tape having an outer peripheral portion attached to the annular frame F so as to cover the opening 17 of the annular frame F. That is, in the wafer unit 19, the wafer 15 is supported by the annular frame F via the dicing tape T.

図２を参照すると、本発明実施形態に係るチャックテーブル１６を備えたスピンナー洗浄装置１２の一部破断斜視図が示されている。１４はスピンナー洗浄装置１２のハウジングであり、ハウジング１４内にチャックテーブル１６が回転可能且つ上昇位置であるウェーハ搬出入位置と下降位置である洗浄位置との間で上下方向に移動可能に配設されている。   Referring to FIG. 2, a partially broken perspective view of the spinner cleaning apparatus 12 including the chuck table 16 according to the embodiment of the present invention is shown. Reference numeral 14 denotes a housing of the spinner cleaning device 12, and the chuck table 16 is rotatably disposed in the housing 14 so as to be movable in the vertical direction between a wafer loading / unloading position that is a raised position and a cleaning position that is a lowered position. ing.

図３及び図４に最もよく示されるように、チャックテーブル１６は、ＳＵＳ、アルミニウム合金等の金属から形成されたテーブルベース１８と、テーブルベース１８に固定された樹脂から形成された保持テーブル２０とを含んでいる。保持テーブル２０を形成する樹脂としては、フッ素樹脂、ポリアセタール樹脂等が使用可能である。   As best shown in FIGS. 3 and 4, the chuck table 16 includes a table base 18 formed from a metal such as SUS or an aluminum alloy, and a holding table 20 formed from a resin fixed to the table base 18. Is included. As the resin for forming the holding table 20, a fluororesin, a polyacetal resin, or the like can be used.

保持テーブル２０の上面には円形凹部２２が形成されており、円形凹部２２は環状凸部２４で囲繞されている。円形凹部２２の直径は、環状フレームＦの開口１７より小さくウェーハ１１の直径より大きく形成されており、円形凹部２２の底面２２ａは平坦面に形成されている。   A circular concave portion 22 is formed on the upper surface of the holding table 20, and the circular concave portion 22 is surrounded by an annular convex portion 24. The diameter of the circular recess 22 is smaller than the opening 17 of the annular frame F and larger than the diameter of the wafer 11, and the bottom surface 22 a of the circular recess 22 is formed as a flat surface.

円形凹部２２の底面２２ａの外周部には複数の吸引孔２６が形成されている。これらの吸引孔２６が形成された位置は、図４に示すように、ウェーハユニット１９がチャックテーブル１６に吸引保持された際、ウェーハ１１の外周よりも外側の位置であることが重要である。   A plurality of suction holes 26 are formed in the outer peripheral portion of the bottom surface 22 a of the circular recess 22. As shown in FIG. 4, it is important that the positions where these suction holes 26 are formed are positions outside the outer periphery of the wafer 11 when the wafer unit 19 is sucked and held by the chuck table 16.

吸引孔２６は吸引路２８，３０及び電磁切替弁３２を介して吸引源３４に接続されている。特に図示しないが、吸引孔２６を円形凹部２２の底面２２ａに形成せずに、円形凹部２２の内周面に形成するようにしてもよい。或いは、吸引孔２６を円形凹部２２の底面２２ａに加えて円形凹部の内周面に形成するようにしてもよい。   The suction hole 26 is connected to a suction source 34 via suction paths 28 and 30 and an electromagnetic switching valve 32. Although not particularly illustrated, the suction hole 26 may be formed on the inner peripheral surface of the circular recess 22 without being formed on the bottom surface 22 a of the circular recess 22. Alternatively, the suction hole 26 may be formed on the inner peripheral surface of the circular recess in addition to the bottom surface 22 a of the circular recess 22.

本実施形態のチャックテーブル１６では、チャックテーブル１６は導体であるテーブルベース１８と絶縁体である保持テーブル２０とから構成されている。従って、図４に示すように、半導体であるウェーハ１１がチャックテーブル１６に吸引保持された状態では、半導体であるウェーハ１１とテーブルベース１８との間に、絶縁体である保持テーブル２０が挟まれている。これは２枚の導体の間に絶縁体を挟んだ平行コンデンサと類似した構造と考えられる。   In the chuck table 16 of this embodiment, the chuck table 16 includes a table base 18 that is a conductor and a holding table 20 that is an insulator. Therefore, as shown in FIG. 4, in a state where the semiconductor wafer 11 is sucked and held by the chuck table 16, the holding table 20 which is an insulator is sandwiched between the wafer 11 which is a semiconductor and the table base 18. ing. This is considered to be a structure similar to a parallel capacitor in which an insulator is sandwiched between two conductors.

平行コンデンサでは、コンデンサの容量が小さければ小さいほど帯電量が小さくなる。本実施形態のチャックテーブル１６では、保持テーブル２０全体が樹脂から形成されているため、電荷が溜まり難く帯電量が常に小さく抑えられる。   In the parallel capacitor, the smaller the capacitance of the capacitor, the smaller the charge amount. In the chuck table 16 of the present embodiment, since the entire holding table 20 is made of resin, electric charges are difficult to accumulate, and the amount of charge is always kept small.

静電破壊は、ウェーハ１１内での電子の移動に起因するものであり、電子の移動は溜まった電荷が放電した時に生じるが、本実施形態のチャックテーブル１６では帯電量が常に小さく抑えられるので、ウェーハ１１内での電子の移動も生じにくくなって放電が起こりにくくなり、結果として静電破壊を効果的に抑制することができる。   The electrostatic breakdown is caused by the movement of electrons in the wafer 11, and the movement of electrons occurs when the accumulated electric charges are discharged. However, in the chuck table 16 of the present embodiment, the charge amount is always kept small. Electron movement in the wafer 11 is less likely to occur and discharge is less likely to occur, and as a result, electrostatic breakdown can be effectively suppressed.

図２を再び参照すると、スピンナー洗浄装置１２は流体供給ユニット３８を備えている。流体供給ユニット３８は、純水供給源及びエア源に選択的に接続されるパイプ４０と、パイプ４０に嵌合しパイプ４０に対して回動可能なジョイント４２と、ジョイント４２に一端部が連結された洗浄水ノズル４４及びエアノズル４６とから構成される。これらのノズル４４，４６は水平旋回可能に支持されている。   Referring back to FIG. 2, the spinner cleaning device 12 includes a fluid supply unit 38. The fluid supply unit 38 includes a pipe 40 that is selectively connected to a pure water supply source and an air source, a joint 42 that is fitted to the pipe 40 and is rotatable with respect to the pipe 40, and one end connected to the joint 42. The cleaning water nozzle 44 and the air nozzle 46 are configured. These nozzles 44 and 46 are supported so as to be horizontally rotatable.

４８は除電ユニットであり、チャックテーブル１６の上面にイオン化エアを吹き付けるイオン化エアノズル５０と、イオン化エアノズル５０の一端部が連結された回転シリンダ５２と、回転シリンダ５２に接続されたエアをイオン化するイオン化エア生成源５４とを含んでいる。   Reference numeral 48 denotes a static elimination unit, which is an ionization air nozzle 50 that blows ionized air onto the upper surface of the chuck table 16, a rotating cylinder 52 that is connected to one end of the ionizing air nozzle 50, and ionized air that ionizes the air connected to the rotating cylinder 52. A generation source 54.

以下、上述した実施形態に係るスピンナー洗浄装置１２の作用について説明する。本実施形態のスピンナー洗浄装置１２は、切削ブレードによりウェーハ１１をダイシングする切削装置に配設されている。   Hereinafter, the operation of the spinner cleaning apparatus 12 according to the above-described embodiment will be described. The spinner cleaning device 12 of this embodiment is disposed in a cutting device that dices the wafer 11 with a cutting blade.

ダイシングの終了したウェーハ１１を支持したウェーハユニット１９は、搬送装置によってスピンナー洗浄装置１２の真上に位置付けられる。次いで、スピンナー洗浄装置１２のチャックテーブル１６が上昇してウェーハ搬入位置に位置付けられ、ウェーハユニット１９がスピンナー洗浄装置１２のチャックテーブル１６上に載置され、環状フレームＦが図示しないクランプにより固定される。   The wafer unit 19 that supports the wafer 11 that has been diced is positioned directly above the spinner cleaning device 12 by the transfer device. Next, the chuck table 16 of the spinner cleaning device 12 is raised and positioned at the wafer carry-in position, the wafer unit 19 is placed on the chuck table 16 of the spinner cleaning device 12, and the annular frame F is fixed by a clamp (not shown). .

次いで、図４に示すように、電磁切替弁３２を連通位置に切り替えて、吸引孔２６を吸引路２８，３０を介して吸引源３４に接続することにより、円形凹部２２内に負圧を発生させ、図４に示すように、ダイシングテープＴを円形凹部２２の底面２２ａに吸引し、ウェーハ１１をダイシングテープＴを介して円形凹部２２の底面２２ａで吸引保持する。   Next, as shown in FIG. 4, the electromagnetic switching valve 32 is switched to the communication position, and the suction hole 26 is connected to the suction source 34 via the suction paths 28 and 30, thereby generating a negative pressure in the circular recess 22. Then, as shown in FIG. 4, the dicing tape T is sucked to the bottom surface 22 a of the circular recess 22, and the wafer 11 is sucked and held by the bottom surface 22 a of the circular recess 22 through the dicing tape T.

吸引孔２６はウェーハ１１よりも外周部分の保持面２２ａに開口しているので、ダイシングテープＴを介して吸引保持されたウェーハ１１の下側には吸引孔が存在せず、ウェーハ１１はダイシングテープＴを介して円形凹部２２の底面２２ａに密着する。従って、ウェーハ１１が５０μｍ程度に薄化されたウェーハであっても、吸引保持されたウェーハ１１が吸引孔２６に倣って変形することなくウェーハ１１の破損が完全に防止される。   Since the suction hole 26 is opened to the holding surface 22a at the outer peripheral portion than the wafer 11, there is no suction hole below the wafer 11 sucked and held via the dicing tape T, and the wafer 11 is dicing tape. It is in close contact with the bottom surface 22a of the circular recess 22 via T. Therefore, even if the wafer 11 is thinned to about 50 μm, the wafer 11 that is sucked and held is not deformed following the suction hole 26, and damage to the wafer 11 is completely prevented.

再び図２を参照すると、チャックテーブル１６は回転軸３６に連結されており、図４に示すように、ウェーハ洗浄位置でウェーハ１１をダイシングテープＴを介して吸引保持したならば、チャックテーブル１６を例えば８００ｒｐｍで回転すると共に、洗浄水ノズル４４を往復旋回しながら洗浄水ノズル４４の先端から洗浄水を噴射する。   Referring to FIG. 2 again, the chuck table 16 is connected to the rotary shaft 36. If the wafer 11 is sucked and held through the dicing tape T at the wafer cleaning position as shown in FIG. For example, while rotating at 800 rpm, cleaning water is jetted from the tip of the cleaning water nozzle 44 while reciprocatingly rotating the cleaning water nozzle 44.

洗浄水は自転するウェーハ１１の上面に万遍なく吐出され、ウェーハ１１に付着している切削屑等の汚れ成分を洗浄水で洗い流す。所定の洗浄時間が経過したら、洗浄水の供給を停止して洗浄水ノズル４４を図２に示す待避位置に待避する。   The cleaning water is uniformly discharged on the upper surface of the rotating wafer 11, and dirt components such as cutting dust adhering to the wafer 11 are washed away with the cleaning water. When a predetermined cleaning time has elapsed, the supply of cleaning water is stopped and the cleaning water nozzle 44 is retracted to the retracted position shown in FIG.

続いて、チャックテーブル１６の回転速度を例えば３０００ｒｐｍ程度まで上昇し、ウェーハ１１に付着している洗浄水を遠心力により吹き飛ばす。これと同時に、エアノズル４６が往復旋回しながらエアノズル４６の先端から高圧の乾燥エアを吐出する。   Subsequently, the rotation speed of the chuck table 16 is increased to, for example, about 3000 rpm, and the cleaning water adhering to the wafer 11 is blown off by centrifugal force. At the same time, the air nozzle 46 reciprocates and discharges high-pressure dry air from the tip of the air nozzle 46.

乾燥エアは自転するウェーハ１１の上面に万遍なく行き渡り、遠心力による洗浄水を吹き飛ばす作用と相まってウェーハ１１は速やかに乾燥する。所定の乾燥時間が経過したら、乾燥エアの供給が停止されてエアノズル４６が図２に示す待避位置に待避する。   Dry air spreads uniformly over the upper surface of the rotating wafer 11, and the wafer 11 is quickly dried in combination with the action of blowing cleaning water by centrifugal force. When a predetermined drying time has elapsed, the supply of dry air is stopped and the air nozzle 46 is retracted to the retracted position shown in FIG.

ウェーハ１１の洗浄及び乾燥が終了したら、チャックテーブル１６が上昇して搬出位置に位置付けられ、ウェーハ１１の吸引が解除され図示しない搬送装置によってウェーハユニット１９が次の工程が実施される場所に搬送される。   When the cleaning and drying of the wafer 11 is completed, the chuck table 16 is raised and positioned at the unloading position, the suction of the wafer 11 is released, and the wafer unit 19 is transferred to a place where the next process is performed by a transfer device (not shown). The

ウェーハユニット１９をスピンナー洗浄装置１２から搬出した後、イオン化エアノズル５０が往復旋回しながらイオン化エアがチャックテーブル１６の表面全面に吹き付けられる。所定のイオン化エア吹き付け時間が経過したらイオン化エアの吹き付けを停止し、次に搬送されてくるウェーハユニット１９の洗浄処理に備えることになる。   After the wafer unit 19 is unloaded from the spinner cleaning device 12, ionized air is blown over the entire surface of the chuck table 16 while the ionized air nozzle 50 reciprocates. When a predetermined ionized air blowing time has elapsed, the ionized air blowing is stopped, and the wafer unit 19 to be transported next is prepared for the cleaning process.

上述した実施形態のチャックテーブル１６では、ダイシングテープＴで覆う円形凹部２２で密閉空間を形成し、この密閉空間に負圧を発生させてウェーハ１１をダイシングテープＴを介して吸引保持するため、強力にウェーハ１１を保持することができる。   In the chuck table 16 of the above-described embodiment, a sealed space is formed by the circular concave portion 22 covered with the dicing tape T, and a negative pressure is generated in the sealed space to suck and hold the wafer 11 via the dicing tape T. The wafer 11 can be held on the substrate.

ウェーハ１１を吸引保持する際、ウェーハ１１は吸引孔２６と離間した位置で吸引保持されるので、平坦面である円形凹部２２の底面２２ａでウェーハ１１を強力に吸引保持することができる。   When the wafer 11 is sucked and held, the wafer 11 is sucked and held at a position separated from the suction hole 26, so that the wafer 11 can be strongly sucked and held by the bottom surface 22a of the circular recess 22 which is a flat surface.

上述した実施形態では、本発明のチャックテーブル１６をスピンナー洗浄装置１２のスピンナーテーブルとして利用した例について説明したが、本発明はこれに限定されるものではなく、吸引孔や吸引溝を用いて吸引力を発生させるタイプの外周に凸部があっても問題のないチャックテーブル全般に適用することが可能である。   In the above-described embodiment, the example in which the chuck table 16 of the present invention is used as the spinner table of the spinner cleaning device 12 has been described. However, the present invention is not limited to this, and suction is performed using suction holes or suction grooves. The present invention can be applied to any chuck table that does not have a problem even if there is a convex portion on the outer periphery of the type that generates force.

１１ 半導体ウェーハ
１２ スピンナー洗浄装置
１６ チャックテーブル
１８ テーブルベース
１９ ウェーハユニット
２０ 保持テーブル
２２ 円形凹部
２４ 環状凸部
２６ 吸引孔
２８，３０ 吸引路
３４ 吸引源
３８ 流体供給ユニット
４４ 洗浄水ノズル
４６ エアノズル
４８ 除電ユニット
５０ イオン化エアノズル
Ｔ 粘着テープ（ダイシングテープ）
Ｆ 環状フレーム DESCRIPTION OF SYMBOLS 11 Semiconductor wafer 12 Spinner cleaning apparatus 16 Chuck table 18 Table base 19 Wafer unit 20 Holding table 22 Circular recessed part 24 Annular convex part 26 Suction hole 28, 30 Suction path 34 Suction source 38 Fluid supply unit 44 Washing water nozzle 46 Air nozzle 48 Static elimination unit 50 Ionized air nozzle T Adhesive tape (dicing tape)
F ring frame

Claims (3)

環状フレームの開口を覆うように該環状フレームに貼着された粘着テープでウェーハが支持されたウェーハユニットを保持するチャックテーブルであって、
該環状フレームの開口より小さくウェーハの直径より大きく形成され、平坦な底面を有する凹部と、
該粘着テープを介して保持したウェーハを囲繞する領域の該凹部の該底面又は内周面に形成された複数の吸引孔と、
該複数の吸引孔を吸引源に連通する吸引路と、を備え、
該ウェーハユニットを保持する際は、該粘着テープで覆われた該凹部に負圧を発生させ、該粘着テープを介してウェーハを該底面で吸引保持することを特徴とするチャックテーブル。 A chuck table for holding a wafer unit in which a wafer is supported by an adhesive tape attached to the annular frame so as to cover an opening of the annular frame,
A recess formed smaller than the opening of the annular frame and larger than the diameter of the wafer and having a flat bottom surface;
A plurality of suction holes formed in the bottom surface or the inner peripheral surface of the recess in the region surrounding the wafer held via the adhesive tape;
A suction path that communicates the plurality of suction holes with a suction source, and
When holding the wafer unit, a negative pressure is generated in the concave portion covered with the adhesive tape, and the wafer is sucked and held on the bottom surface via the adhesive tape. 環状フレームの開口を覆うように該環状フレームに貼着された粘着テープでウェーハが支持されたウェーハユニットの該ウェーハを洗浄する洗浄装置であって、
回転可能に支持された請求項１記載のチャックテーブルと、
該チャックテーブルに保持されたウェーハに流体を供給する流体供給手段と、
を備えたことを特徴とする洗浄装置。 A cleaning device for cleaning the wafer of a wafer unit in which the wafer is supported by an adhesive tape attached to the annular frame so as to cover the opening of the annular frame,
The chuck table according to claim 1, which is rotatably supported;
Fluid supply means for supplying fluid to the wafer held on the chuck table;
A cleaning apparatus comprising: 該チャックテーブルに保持されたウェーハにイオン化エアを供給する除電手段を更に備えたことを特徴とする請求項２記載の洗浄装置。   The cleaning apparatus according to claim 2, further comprising a charge removing unit that supplies ionized air to the wafer held on the chuck table.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018167367A (en) * 2017-03-30 2018-11-01 株式会社ディスコ Grinding device
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JP7217165B2 (en) * 2019-02-14 2023-02-02 株式会社ディスコ Chuck table and inspection device
JP7390615B2 (en) 2019-12-27 2023-12-04 パナソニックＩｐマネジメント株式会社 Resin coating equipment, resin film forming method, and device chip manufacturing method
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Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002313891A (en) * 2001-04-16 2002-10-25 Matsushita Electric Ind Co Ltd Tray for substrate transport and manufacturing method therefor
JP2002203783A (en) * 2001-10-18 2002-07-19 Tokyo Electron Ltd Method of treating and treater
JP4373736B2 (en) * 2003-08-27 2009-11-25 株式会社ディスコ Chuck table of processing equipment
JP4020938B2 (en) * 2005-08-22 2007-12-12 東京エレクトロン株式会社 Semiconductor wafer transfer tray and semiconductor wafer transfer system
JP2007281050A (en) * 2006-04-04 2007-10-25 Miraial Kk Wafer tray for semiconductor wafer
JP2008283025A (en) * 2007-05-11 2008-11-20 Disco Abrasive Syst Ltd Method of dividing wafer
JP2009043771A (en) * 2007-08-06 2009-02-26 Disco Abrasive Syst Ltd Chuck table mechanism and holding method for workpiece
JP2010016147A (en) * 2008-07-03 2010-01-21 Disco Abrasive Syst Ltd Adhesive tape attaching method
JP5198203B2 (en) * 2008-09-30 2013-05-15 株式会社ディスコ Processing equipment
JP2010283286A (en) 2009-06-08 2010-12-16 Disco Abrasive Syst Ltd Work holder
JP2011135026A (en) * 2009-11-27 2011-07-07 Disco Abrasive Syst Ltd Holding method and holding mechanism for work unit
JP5607965B2 (en) * 2010-03-23 2014-10-15 日東電工株式会社 Semiconductor wafer mounting method and semiconductor wafer mounting apparatus
JP5554617B2 (en) * 2010-04-12 2014-07-23 株式会社ディスコ Holding table
JP5554661B2 (en) * 2010-08-27 2014-07-23 株式会社ディスコ Dicing machine
JP6059921B2 (en) * 2012-08-31 2017-01-11 日東電工株式会社 Adhesive tape application method and adhesive tape application device
JP6189700B2 (en) * 2013-10-03 2017-08-30 株式会社ディスコ Wafer processing method
JP6305750B2 (en) * 2013-12-12 2018-04-04 株式会社ディスコ Processing machine with static eliminator
JP6276988B2 (en) * 2013-12-27 2018-02-07 日東精機株式会社 Adhesive tape application method and adhesive tape application device

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