TWI307887B - Circuit and method of writing a toggle memory - Google Patents
Circuit and method of writing a toggle memory Download PDFInfo
- Publication number
- TWI307887B TWI307887B TW092117443A TW92117443A TWI307887B TW I307887 B TWI307887 B TW I307887B TW 092117443 A TW092117443 A TW 092117443A TW 92117443 A TW92117443 A TW 92117443A TW I307887 B TWI307887 B TW I307887B
- Authority
- TW
- Taiwan
- Prior art keywords
- write
- memory
- read
- current
- writing
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000015654 memory Effects 0.000 title claims description 88
- 230000008859 change Effects 0.000 claims description 25
- 230000002441 reversible effect Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 3
- 230000036961 partial effect Effects 0.000 claims description 2
- 210000002784 stomach Anatomy 0.000 claims description 2
- 230000035935 pregnancy Effects 0.000 claims 1
- 230000005291 magnetic effect Effects 0.000 abstract description 121
- 230000002829 reductive effect Effects 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 3
- 230000002411 adverse Effects 0.000 abstract description 2
- 239000013598 vector Substances 0.000 description 60
- 230000005294 ferromagnetic effect Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 11
- 230000008878 coupling Effects 0.000 description 11
- 238000010168 coupling process Methods 0.000 description 11
- 238000005859 coupling reaction Methods 0.000 description 11
- 230000005290 antiferromagnetic effect Effects 0.000 description 10
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 10
- 230000008901 benefit Effects 0.000 description 7
- 230000005415 magnetization Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 4
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- 239000013078 crystal Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
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- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2263—Write conditionally, e.g. only if new data and old data differ
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
- Digital Magnetic Recording (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/186,141 US6693824B2 (en) | 2002-06-28 | 2002-06-28 | Circuit and method of writing a toggle memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200409118A TW200409118A (en) | 2004-06-01 |
| TWI307887B true TWI307887B (en) | 2009-03-21 |
Family
ID=29779824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092117443A TWI307887B (en) | 2002-06-28 | 2003-06-26 | Circuit and method of writing a toggle memory |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6693824B2 (https=) |
| EP (1) | EP1518246B1 (https=) |
| JP (1) | JP4359561B2 (https=) |
| KR (1) | KR100943112B1 (https=) |
| CN (1) | CN100470665C (https=) |
| AT (1) | ATE333138T1 (https=) |
| AU (1) | AU2003231170A1 (https=) |
| DE (1) | DE60306782T2 (https=) |
| TW (1) | TWI307887B (https=) |
| WO (1) | WO2004003922A1 (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6842365B1 (en) * | 2003-09-05 | 2005-01-11 | Freescale Semiconductor, Inc. | Write driver for a magnetoresistive memory |
| US7286378B2 (en) * | 2003-11-04 | 2007-10-23 | Micron Technology, Inc. | Serial transistor-cell array architecture |
| US7613868B2 (en) * | 2004-06-09 | 2009-11-03 | Headway Technologies, Inc. | Method and system for optimizing the number of word line segments in a segmented MRAM array |
| JP2006031795A (ja) * | 2004-07-14 | 2006-02-02 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
| JP2006065986A (ja) * | 2004-08-27 | 2006-03-09 | Fujitsu Ltd | 磁気抵抗メモリおよび磁気抵抗メモリ書き込み方法 |
| JP4012196B2 (ja) * | 2004-12-22 | 2007-11-21 | 株式会社東芝 | 磁気ランダムアクセスメモリのデータ書き込み方法 |
| US7543211B2 (en) * | 2005-01-31 | 2009-06-02 | Everspin Technologies, Inc. | Toggle memory burst |
| WO2006085545A1 (ja) * | 2005-02-09 | 2006-08-17 | Nec Corporation | トグル型磁気ランダムアクセスメモリ及びトグル型磁気ランダムアクセスメモリの書き込み方法 |
| JP5035620B2 (ja) * | 2005-09-14 | 2012-09-26 | 日本電気株式会社 | 磁気ランダムアクセスメモリの波形整形回路 |
| WO2007053517A2 (en) * | 2005-10-28 | 2007-05-10 | The University Of Alabama | Enhanced toggle-mram memory device |
| US7577017B2 (en) * | 2006-01-20 | 2009-08-18 | Industrial Technology Research Institute | High-bandwidth magnetoresistive random access memory devices and methods of operation thereof |
| US7746686B2 (en) * | 2006-04-21 | 2010-06-29 | Honeywell International Inc. | Partitioned random access and read only memory |
| US8111544B2 (en) * | 2009-02-23 | 2012-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Programming MRAM cells using probability write |
| US9613675B2 (en) | 2013-12-14 | 2017-04-04 | Qualcomm Incorporated | System and method to perform low power memory operations |
| EP3186484B1 (en) * | 2014-08-29 | 2019-06-05 | Siemens Aktiengesellschaft | Gas turbine engine |
| CN204878059U (zh) | 2014-12-17 | 2015-12-16 | 依必安-派特穆尔芬根股份有限两合公司 | 一种叶片及风机叶轮 |
| KR101976045B1 (ko) * | 2016-08-30 | 2019-05-09 | 에스케이하이닉스 주식회사 | 쓰기 동작시 상태 전환 인식이 가능한 자기 저항 메모리 장치 및 이에 있어서 읽기 및 쓰기 동작 방법 |
| WO2020105173A1 (ja) * | 2018-11-22 | 2020-05-28 | 三菱電機株式会社 | データ制御装置、プログラマブルロジックコントローラ及びデータ制御方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4763305A (en) | 1985-11-27 | 1988-08-09 | Motorola, Inc. | Intelligent write in an EEPROM with data and erase check |
| US6256224B1 (en) * | 2000-05-03 | 2001-07-03 | Hewlett-Packard Co | Write circuit for large MRAM arrays |
| US5946227A (en) | 1998-07-20 | 1999-08-31 | Motorola, Inc. | Magnetoresistive random access memory with shared word and digit lines |
| US5953248A (en) | 1998-07-20 | 1999-09-14 | Motorola, Inc. | Low switching field magnetic tunneling junction for high density arrays |
| US6111781A (en) | 1998-08-03 | 2000-08-29 | Motorola, Inc. | Magnetic random access memory array divided into a plurality of memory banks |
| DE19853447A1 (de) * | 1998-11-19 | 2000-05-25 | Siemens Ag | Magnetischer Speicher |
| CN1145168C (zh) * | 1999-01-13 | 2004-04-07 | 因芬尼昂技术股份公司 | 磁阻随机存取存储器的写/读结构 |
| US6185143B1 (en) | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
| US6191989B1 (en) | 2000-03-07 | 2001-02-20 | International Business Machines Corporation | Current sensing amplifier |
| US6272041B1 (en) | 2000-08-28 | 2001-08-07 | Motorola, Inc. | MTJ MRAM parallel-parallel architecture |
| JP4149647B2 (ja) * | 2000-09-28 | 2008-09-10 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| US6335890B1 (en) | 2000-11-01 | 2002-01-01 | International Business Machines Corporation | Segmented write line architecture for writing magnetic random access memories |
| US6418046B1 (en) * | 2001-01-30 | 2002-07-09 | Motorola, Inc. | MRAM architecture and system |
| DE10107380C1 (de) * | 2001-02-16 | 2002-07-25 | Infineon Technologies Ag | Verfahren zum Beschreiben magnetoresistiver Speicherzellen und mit diesem Verfahren beschreibbarer magnetoresistiver Speicher |
-
2002
- 2002-06-28 US US10/186,141 patent/US6693824B2/en not_active Expired - Fee Related
-
2003
- 2003-04-29 AT AT03724302T patent/ATE333138T1/de not_active IP Right Cessation
- 2003-04-29 DE DE60306782T patent/DE60306782T2/de not_active Expired - Lifetime
- 2003-04-29 EP EP03724302A patent/EP1518246B1/en not_active Expired - Lifetime
- 2003-04-29 KR KR1020047021252A patent/KR100943112B1/ko not_active Expired - Lifetime
- 2003-04-29 CN CNB038152959A patent/CN100470665C/zh not_active Expired - Fee Related
- 2003-04-29 JP JP2004517527A patent/JP4359561B2/ja not_active Expired - Fee Related
- 2003-04-29 WO PCT/US2003/013179 patent/WO2004003922A1/en not_active Ceased
- 2003-04-29 AU AU2003231170A patent/AU2003231170A1/en not_active Abandoned
- 2003-06-26 TW TW092117443A patent/TWI307887B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US6693824B2 (en) | 2004-02-17 |
| TW200409118A (en) | 2004-06-01 |
| CN100470665C (zh) | 2009-03-18 |
| WO2004003922A1 (en) | 2004-01-08 |
| DE60306782T2 (de) | 2006-11-30 |
| JP2005531876A (ja) | 2005-10-20 |
| DE60306782D1 (de) | 2006-08-24 |
| ATE333138T1 (de) | 2006-08-15 |
| AU2003231170A1 (en) | 2004-01-19 |
| CN1666292A (zh) | 2005-09-07 |
| KR20050009762A (ko) | 2005-01-25 |
| JP4359561B2 (ja) | 2009-11-04 |
| KR100943112B1 (ko) | 2010-02-18 |
| US20040001352A1 (en) | 2004-01-01 |
| EP1518246B1 (en) | 2006-07-12 |
| EP1518246A1 (en) | 2005-03-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |