CN100470665C - 写入切换存储器的方法 - Google Patents

写入切换存储器的方法 Download PDF

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Publication number
CN100470665C
CN100470665C CNB038152959A CN03815295A CN100470665C CN 100470665 C CN100470665 C CN 100470665C CN B038152959 A CNB038152959 A CN B038152959A CN 03815295 A CN03815295 A CN 03815295A CN 100470665 C CN100470665 C CN 100470665C
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CN
China
Prior art keywords
write
current
predetermined address
address location
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038152959A
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English (en)
Chinese (zh)
Other versions
CN1666292A (zh
Inventor
约瑟夫·J.·纳哈斯
托马斯·W.·安德利
奇特拉·K.·萨布拉曼尼安
布拉德利·J.·加尼
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Freescale Semiconductor Inc
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Publication of CN1666292A publication Critical patent/CN1666292A/zh
Application granted granted Critical
Publication of CN100470665C publication Critical patent/CN100470665C/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2263—Write conditionally, e.g. only if new data and old data differ

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Digital Magnetic Recording (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
CNB038152959A 2002-06-28 2003-04-29 写入切换存储器的方法 Expired - Fee Related CN100470665C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/186,141 2002-06-28
US10/186,141 US6693824B2 (en) 2002-06-28 2002-06-28 Circuit and method of writing a toggle memory

Publications (2)

Publication Number Publication Date
CN1666292A CN1666292A (zh) 2005-09-07
CN100470665C true CN100470665C (zh) 2009-03-18

Family

ID=29779824

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038152959A Expired - Fee Related CN100470665C (zh) 2002-06-28 2003-04-29 写入切换存储器的方法

Country Status (10)

Country Link
US (1) US6693824B2 (https=)
EP (1) EP1518246B1 (https=)
JP (1) JP4359561B2 (https=)
KR (1) KR100943112B1 (https=)
CN (1) CN100470665C (https=)
AT (1) ATE333138T1 (https=)
AU (1) AU2003231170A1 (https=)
DE (1) DE60306782T2 (https=)
TW (1) TWI307887B (https=)
WO (1) WO2004003922A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842365B1 (en) * 2003-09-05 2005-01-11 Freescale Semiconductor, Inc. Write driver for a magnetoresistive memory
US7286378B2 (en) * 2003-11-04 2007-10-23 Micron Technology, Inc. Serial transistor-cell array architecture
US7613868B2 (en) * 2004-06-09 2009-11-03 Headway Technologies, Inc. Method and system for optimizing the number of word line segments in a segmented MRAM array
JP2006031795A (ja) * 2004-07-14 2006-02-02 Renesas Technology Corp 不揮発性半導体記憶装置
JP2006065986A (ja) * 2004-08-27 2006-03-09 Fujitsu Ltd 磁気抵抗メモリおよび磁気抵抗メモリ書き込み方法
JP4012196B2 (ja) * 2004-12-22 2007-11-21 株式会社東芝 磁気ランダムアクセスメモリのデータ書き込み方法
US7543211B2 (en) * 2005-01-31 2009-06-02 Everspin Technologies, Inc. Toggle memory burst
WO2006085545A1 (ja) * 2005-02-09 2006-08-17 Nec Corporation トグル型磁気ランダムアクセスメモリ及びトグル型磁気ランダムアクセスメモリの書き込み方法
JP5035620B2 (ja) * 2005-09-14 2012-09-26 日本電気株式会社 磁気ランダムアクセスメモリの波形整形回路
WO2007053517A2 (en) * 2005-10-28 2007-05-10 The University Of Alabama Enhanced toggle-mram memory device
US7577017B2 (en) * 2006-01-20 2009-08-18 Industrial Technology Research Institute High-bandwidth magnetoresistive random access memory devices and methods of operation thereof
US7746686B2 (en) * 2006-04-21 2010-06-29 Honeywell International Inc. Partitioned random access and read only memory
US8111544B2 (en) * 2009-02-23 2012-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Programming MRAM cells using probability write
US9613675B2 (en) 2013-12-14 2017-04-04 Qualcomm Incorporated System and method to perform low power memory operations
EP3186484B1 (en) * 2014-08-29 2019-06-05 Siemens Aktiengesellschaft Gas turbine engine
CN204878059U (zh) 2014-12-17 2015-12-16 依必安-派特穆尔芬根股份有限两合公司 一种叶片及风机叶轮
KR101976045B1 (ko) * 2016-08-30 2019-05-09 에스케이하이닉스 주식회사 쓰기 동작시 상태 전환 인식이 가능한 자기 저항 메모리 장치 및 이에 있어서 읽기 및 쓰기 동작 방법
WO2020105173A1 (ja) * 2018-11-22 2020-05-28 三菱電機株式会社 データ制御装置、プログラマブルロジックコントローラ及びデータ制御方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953248A (en) * 1998-07-20 1999-09-14 Motorola, Inc. Low switching field magnetic tunneling junction for high density arrays
CN1254929A (zh) * 1998-11-19 2000-05-31 因芬尼昂技术股份公司 磁性存储器
CN1329336A (zh) * 2000-05-03 2002-01-02 惠普公司 磁随机存取存储器大阵列的写入电路
CN1343359A (zh) * 1999-01-13 2002-04-03 因芬尼昂技术股份公司 磁阻随机存取存储器的写/读结构

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4763305A (en) 1985-11-27 1988-08-09 Motorola, Inc. Intelligent write in an EEPROM with data and erase check
US5946227A (en) 1998-07-20 1999-08-31 Motorola, Inc. Magnetoresistive random access memory with shared word and digit lines
US6111781A (en) 1998-08-03 2000-08-29 Motorola, Inc. Magnetic random access memory array divided into a plurality of memory banks
US6185143B1 (en) 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6191989B1 (en) 2000-03-07 2001-02-20 International Business Machines Corporation Current sensing amplifier
US6272041B1 (en) 2000-08-28 2001-08-07 Motorola, Inc. MTJ MRAM parallel-parallel architecture
JP4149647B2 (ja) * 2000-09-28 2008-09-10 株式会社東芝 半導体記憶装置及びその製造方法
US6335890B1 (en) 2000-11-01 2002-01-01 International Business Machines Corporation Segmented write line architecture for writing magnetic random access memories
US6418046B1 (en) * 2001-01-30 2002-07-09 Motorola, Inc. MRAM architecture and system
DE10107380C1 (de) * 2001-02-16 2002-07-25 Infineon Technologies Ag Verfahren zum Beschreiben magnetoresistiver Speicherzellen und mit diesem Verfahren beschreibbarer magnetoresistiver Speicher

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953248A (en) * 1998-07-20 1999-09-14 Motorola, Inc. Low switching field magnetic tunneling junction for high density arrays
CN1254929A (zh) * 1998-11-19 2000-05-31 因芬尼昂技术股份公司 磁性存储器
CN1343359A (zh) * 1999-01-13 2002-04-03 因芬尼昂技术股份公司 磁阻随机存取存储器的写/读结构
CN1329336A (zh) * 2000-05-03 2002-01-02 惠普公司 磁随机存取存储器大阵列的写入电路

Also Published As

Publication number Publication date
US6693824B2 (en) 2004-02-17
TW200409118A (en) 2004-06-01
WO2004003922A1 (en) 2004-01-08
DE60306782T2 (de) 2006-11-30
JP2005531876A (ja) 2005-10-20
DE60306782D1 (de) 2006-08-24
ATE333138T1 (de) 2006-08-15
AU2003231170A1 (en) 2004-01-19
CN1666292A (zh) 2005-09-07
KR20050009762A (ko) 2005-01-25
TWI307887B (en) 2009-03-21
JP4359561B2 (ja) 2009-11-04
KR100943112B1 (ko) 2010-02-18
US20040001352A1 (en) 2004-01-01
EP1518246B1 (en) 2006-07-12
EP1518246A1 (en) 2005-03-30

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Effective date of registration: 20090313

Address after: Arizona USA

Patentee after: Everspin Technologies Inc.

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.

ASS Succession or assignment of patent right

Owner name: EVERSPIN TECHNOLOGIES, INC.

Free format text: FORMER OWNER: FREESCALE SEMICONDUCTOR INC.

Effective date: 20090313

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090318

Termination date: 20160429