TWI306275B - - Google Patents
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- Publication number
- TWI306275B TWI306275B TW093111276A TW93111276A TWI306275B TW I306275 B TWI306275 B TW I306275B TW 093111276 A TW093111276 A TW 093111276A TW 93111276 A TW93111276 A TW 93111276A TW I306275 B TWI306275 B TW I306275B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- processing container
- heat treatment
- film
- teos
- Prior art date
Links
- 238000012545 processing Methods 0.000 claims description 118
- 238000000034 method Methods 0.000 claims description 82
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 55
- 238000010438 heat treatment Methods 0.000 claims description 52
- 238000011282 treatment Methods 0.000 claims description 45
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000010453 quartz Substances 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 16
- 238000005086 pumping Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 195
- 235000012431 wafers Nutrition 0.000 description 77
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 51
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 49
- 238000012546 transfer Methods 0.000 description 43
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 40
- 230000007797 corrosion Effects 0.000 description 20
- 238000005260 corrosion Methods 0.000 description 20
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 10
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 9
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 9
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000011553 magnetic fluid Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002516 radical scavenger Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- SWQJXJOGLNCZEY-BJUDXGSMSA-N helium-3 atom Chemical compound [3He] SWQJXJOGLNCZEY-BJUDXGSMSA-N 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003117663 | 2003-04-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200504849A TW200504849A (en) | 2005-02-01 |
| TWI306275B true TWI306275B (enExample) | 2009-02-11 |
Family
ID=33308045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093111276A TW200504849A (en) | 2003-04-22 | 2004-04-22 | Method for cleaning heat treatment apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20060216949A1 (enExample) |
| KR (1) | KR20060002807A (enExample) |
| TW (1) | TW200504849A (enExample) |
| WO (1) | WO2004095555A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040261923A1 (en) * | 2003-06-25 | 2004-12-30 | Burns Steven M. | Clean atmosphere heat treat for coated turbine components |
| US20050161060A1 (en) * | 2004-01-23 | 2005-07-28 | Johnson Andrew D. | Cleaning CVD chambers following deposition of porogen-containing materials |
| JP4939864B2 (ja) * | 2006-07-25 | 2012-05-30 | 東京エレクトロン株式会社 | ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 |
| JP5520552B2 (ja) * | 2009-09-11 | 2014-06-11 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
| JP6101113B2 (ja) | 2012-03-30 | 2017-03-22 | 株式会社日立国際電気 | 半導体装置の製造方法、クリーニング方法および基板処理装置並びにプログラム |
| KR102516778B1 (ko) | 2018-02-08 | 2023-04-03 | 주성엔지니어링(주) | 챔버 세정 장치 및 챔버 세정 방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2589140B2 (ja) * | 1988-05-13 | 1997-03-12 | 富士通株式会社 | 半導体製造装置の洗浄方法 |
| US5282925A (en) * | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
| JPH06333854A (ja) * | 1993-05-21 | 1994-12-02 | Nippon Steel Corp | 成膜装置 |
| JPH08195381A (ja) * | 1995-01-17 | 1996-07-30 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5817534A (en) * | 1995-12-04 | 1998-10-06 | Applied Materials, Inc. | RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers |
| US5685951A (en) * | 1996-02-15 | 1997-11-11 | Micron Technology, Inc. | Methods and etchants for etching oxides of silicon with low selectivity in a vapor phase system |
| US6114216A (en) * | 1996-11-13 | 2000-09-05 | Applied Materials, Inc. | Methods for shallow trench isolation |
| US20030010354A1 (en) * | 2000-03-27 | 2003-01-16 | Applied Materials, Inc. | Fluorine process for cleaning semiconductor process chamber |
-
2004
- 2004-04-20 WO PCT/JP2004/005644 patent/WO2004095555A1/ja not_active Ceased
- 2004-04-20 US US10/553,828 patent/US20060216949A1/en not_active Abandoned
- 2004-04-20 KR KR1020057016741A patent/KR20060002807A/ko not_active Ceased
- 2004-04-22 TW TW093111276A patent/TW200504849A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060002807A (ko) | 2006-01-09 |
| US20060216949A1 (en) | 2006-09-28 |
| TW200504849A (en) | 2005-02-01 |
| WO2004095555A1 (ja) | 2004-11-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |