KR20060002807A - 열처리 장치의 클리닝 방법 - Google Patents

열처리 장치의 클리닝 방법 Download PDF

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Publication number
KR20060002807A
KR20060002807A KR1020057016741A KR20057016741A KR20060002807A KR 20060002807 A KR20060002807 A KR 20060002807A KR 1020057016741 A KR1020057016741 A KR 1020057016741A KR 20057016741 A KR20057016741 A KR 20057016741A KR 20060002807 A KR20060002807 A KR 20060002807A
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KR
South Korea
Prior art keywords
gas
film
cleaning
processing container
teos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020057016741A
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English (en)
Korean (ko)
Inventor
가즈히데 하세베
미쯔히로 오까다
다까시 지바
쥰 오가와
Original Assignee
도쿄 엘렉트론 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄 엘렉트론 가부시키가이샤 filed Critical 도쿄 엘렉트론 가부시키가이샤
Publication of KR20060002807A publication Critical patent/KR20060002807A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020057016741A 2003-04-22 2004-04-20 열처리 장치의 클리닝 방법 Ceased KR20060002807A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003117663 2003-04-22
JPJP-P-2003-00117663 2003-04-22

Publications (1)

Publication Number Publication Date
KR20060002807A true KR20060002807A (ko) 2006-01-09

Family

ID=33308045

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057016741A Ceased KR20060002807A (ko) 2003-04-22 2004-04-20 열처리 장치의 클리닝 방법

Country Status (4)

Country Link
US (1) US20060216949A1 (enExample)
KR (1) KR20060002807A (enExample)
TW (1) TW200504849A (enExample)
WO (1) WO2004095555A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9401282B2 (en) 2012-03-30 2016-07-26 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, cleaning method, substrate processing apparatus and non-transitory computer readable recording medium

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040261923A1 (en) * 2003-06-25 2004-12-30 Burns Steven M. Clean atmosphere heat treat for coated turbine components
US20050161060A1 (en) * 2004-01-23 2005-07-28 Johnson Andrew D. Cleaning CVD chambers following deposition of porogen-containing materials
JP4939864B2 (ja) * 2006-07-25 2012-05-30 東京エレクトロン株式会社 ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
JP5520552B2 (ja) * 2009-09-11 2014-06-11 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
KR102516778B1 (ko) 2018-02-08 2023-04-03 주성엔지니어링(주) 챔버 세정 장치 및 챔버 세정 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2589140B2 (ja) * 1988-05-13 1997-03-12 富士通株式会社 半導体製造装置の洗浄方法
US5282925A (en) * 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
JPH06333854A (ja) * 1993-05-21 1994-12-02 Nippon Steel Corp 成膜装置
JPH08195381A (ja) * 1995-01-17 1996-07-30 Fujitsu Ltd 半導体装置の製造方法
US5817534A (en) * 1995-12-04 1998-10-06 Applied Materials, Inc. RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
US5685951A (en) * 1996-02-15 1997-11-11 Micron Technology, Inc. Methods and etchants for etching oxides of silicon with low selectivity in a vapor phase system
US6114216A (en) * 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
US20030010354A1 (en) * 2000-03-27 2003-01-16 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9401282B2 (en) 2012-03-30 2016-07-26 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, cleaning method, substrate processing apparatus and non-transitory computer readable recording medium

Also Published As

Publication number Publication date
US20060216949A1 (en) 2006-09-28
TW200504849A (en) 2005-02-01
WO2004095555A1 (ja) 2004-11-04
TWI306275B (enExample) 2009-02-11

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