TWI297553B - - Google Patents

Download PDF

Info

Publication number
TWI297553B
TWI297553B TW091119506A TW91119506A TWI297553B TW I297553 B TWI297553 B TW I297553B TW 091119506 A TW091119506 A TW 091119506A TW 91119506 A TW91119506 A TW 91119506A TW I297553 B TWI297553 B TW I297553B
Authority
TW
Taiwan
Prior art keywords
organic
layer
forming
molecular
semiconductor layer
Prior art date
Application number
TW091119506A
Other languages
English (en)
Chinese (zh)
Inventor
Horng Long Cheng
Wei Yang Chou
Chai Yuan Sheu
Yu Wu Wang
Jia Chong Ho
Chi Chang Liao
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW091119506A priority Critical patent/TWI297553B/zh
Priority to US10/301,632 priority patent/US6737303B2/en
Priority to JP2003279321A priority patent/JP4684543B2/ja
Application granted granted Critical
Publication of TWI297553B publication Critical patent/TWI297553B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW091119506A 2002-08-28 2002-08-28 TWI297553B (OSRAM)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW091119506A TWI297553B (OSRAM) 2002-08-28 2002-08-28
US10/301,632 US6737303B2 (en) 2002-08-28 2002-11-22 Process for forming organic semiconducting layer having molecular alignment
JP2003279321A JP4684543B2 (ja) 2002-08-28 2003-07-24 分子配列を有する有機半導体層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW091119506A TWI297553B (OSRAM) 2002-08-28 2002-08-28

Publications (1)

Publication Number Publication Date
TWI297553B true TWI297553B (OSRAM) 2008-06-01

Family

ID=31974897

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091119506A TWI297553B (OSRAM) 2002-08-28 2002-08-28

Country Status (3)

Country Link
US (1) US6737303B2 (OSRAM)
JP (1) JP4684543B2 (OSRAM)
TW (1) TWI297553B (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW582059B (en) * 2003-03-11 2004-04-01 Ind Tech Res Inst Organic component, method for forming organic semiconductor layer with aligned molecules, and method for forming organic component
JP4194436B2 (ja) * 2003-07-14 2008-12-10 キヤノン株式会社 電界効果型有機トランジスタ
GB0318817D0 (en) * 2003-08-11 2003-09-10 Univ Cambridge Tech Method of making a polymer device
KR100647325B1 (ko) * 2005-04-21 2006-11-23 삼성전자주식회사 저면발광형 유기발광소자
US20070040165A1 (en) * 2005-08-16 2007-02-22 Klaus Dimmler Method of fabricating organic FETs
JP2007096160A (ja) * 2005-09-30 2007-04-12 Oki Data Corp 半導体複合装置、及びこれらを用いたプリントヘッド並びに画像形成装置。
US8212243B2 (en) * 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
US8309394B2 (en) * 2010-01-22 2012-11-13 Eastman Kodak Company Method of making N-type semiconductor devices
CN102201535B (zh) * 2011-03-30 2013-02-13 合肥工业大学 可紫外光刻微图案化的有机薄膜晶体管半导体材料及用途
CN104035237B (zh) * 2014-05-30 2017-03-01 京东方科技集团股份有限公司 光配向膜及其制作方法、液晶显示器
US20220045274A1 (en) * 2020-08-06 2022-02-10 Facebook Technologies Llc Ofets having organic semiconductor layer with high carrier mobility and in situ isolation
US11631818B2 (en) * 2020-08-06 2023-04-18 Meta Platforms Technologies, Llc OFETs having multilayer organic semiconductor with high on/off ratio

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0983040A (ja) * 1995-09-12 1997-03-28 Sharp Corp 薄膜トランジスタ及びその製造方法
TW515926B (en) * 1996-07-10 2003-01-01 Matsushita Electric Industrial Co Ltd Liquid crystal alignment film and method for producing the same, and liquid crystal display apparatus using the same and method for producing the same
TW508470B (en) * 1997-05-09 2002-11-01 Hitachi Ltd Liquid crystal display device
JPH11204261A (ja) * 1998-01-08 1999-07-30 Mitsubishi Electric Corp 有機エレクトロルミネッセンス素子
JP2000010119A (ja) * 1998-06-23 2000-01-14 Mitsubishi Electric Corp 液晶表示装置および該装置に用いるアレイ基板の製法
JP3114723B2 (ja) * 1998-08-03 2000-12-04 日本電気株式会社 液晶表示装置およびその製造方法
JP5167569B2 (ja) * 1999-06-21 2013-03-21 ケンブリッジ・エンタープライズ・リミテッド トランジスタの製造方法
JP2001291594A (ja) * 2000-04-07 2001-10-19 Canon Inc 導電性液晶素子
JP3570974B2 (ja) * 2000-07-17 2004-09-29 Ｎｅｃ液晶テクノロジー株式会社 アクティブマトリクス型液晶表示装置
US6577798B2 (en) * 2000-07-18 2003-06-10 Reveo, Inc. Method for producing non-linear optical organic crystal film
US6582776B2 (en) * 2000-11-24 2003-06-24 Hong Kong University Of Science And Technology Method of manufacturing photo-alignment layer
JP3750055B2 (ja) * 2001-02-28 2006-03-01 株式会社日立製作所 液晶表示装置
US6777529B2 (en) * 2002-01-11 2004-08-17 Xerox Corporation Polythiophenes and devices thereof

Also Published As

Publication number Publication date
JP2004088096A (ja) 2004-03-18
JP4684543B2 (ja) 2011-05-18
US20040043531A1 (en) 2004-03-04
US6737303B2 (en) 2004-05-18

Similar Documents

Publication Publication Date Title
US6844579B2 (en) Organic device including semiconducting layer aligned according to microgrooves of photoresist layer
KR101532759B1 (ko) 유기 박막 트랜지스터
JP5487421B2 (ja) トランジスタの構造及びその製造方法
US8450142B2 (en) Organic thin film transistors
US20100032662A1 (en) Organic Thin Film Transistors
JP2005093921A (ja) 電界効果型有機トランジスタおよびその製造方法
US20100314614A1 (en) Organic Thin Film Transistors, Active Matrix Organic Optical Devices and Methods of Making the Same
TWI297553B (OSRAM)
JP2001177109A (ja) 薄膜トランジスタ
CN104900713B (zh) 薄膜晶体管及其制作方法、显示基板、显示装置
JP2003258265A (ja) 有機薄膜トランジスタ
US8502356B2 (en) Organic thin film transistors
CN106575607A (zh) 正交图案化方法
CN105514039A (zh) 一种基于喷墨打印技术的有机薄膜晶体管器件的优化方法
KR101509420B1 (ko) 유기 박막 트랜지스터
CN102110775B (zh) 实现半导体聚合物图形化的方法及其应用器件
CN108493229A (zh) 显示基板及其制备方法、显示装置
CN102986049A (zh) 使用光活性有机材料的强化晶体管及其制备方法
CN102655212A (zh) 一种有机场效应晶体管结构及其制备方法
KR102126526B1 (ko) 나노 구조를 이용한 유기 반도체 소자 및 이의 제조방법
KR101144474B1 (ko) 유기 박막트랜지스터 및 그 제조방법
CN1841758A (zh) 有机薄膜晶体管阵列面板及其制造方法
CN108899371A (zh) 锗纳米膜柔性金属型多沟道薄膜晶体管及其制造方法
CN101136454A (zh) 有机半导体元件及其制造方法
HK1134583B (en) Method of forming organic thin film transistors

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees