TWI294646B - - Google Patents

Description

1294646 (1) Description of the Invention [Technical Field of the Invention] The present invention relates to a semiconductive film using a biaxially oriented film obtained by using a composition of a hexa-2,6-Cai. In detail, regarding the semiconductor wafer processing process [J (backgrind) process or cutting (dicing a * '... * * '' surface grinding tape (back grind tape) substrate tape) A backgrinding material film having excellent smoothness and mechanical strength when the substrate is used. [Prior Art] In the process of dicing the back side of a wafer in semiconductor manufacturing, and the process of cutting 1C (integrated body) from a completed wafer (cutting process), various kinds of laminates are used for wafer fixing. Use. Grinding the wafer on the back side is honed by the affixing of the adhesive tape, and is transferred to the next cutting process by UV (ultraviolet) irradiation or heating. When the fixed wafers are cut into individual 1C wafer cutting processes, they are taken out one by one by UV irradiation or heating. The process of taking out to the next bonding process, mold formic acid glycolate as the main body wafer processing substrate, digging | is the name of the general meeting, as the back ^ cutting tape (dicing - one. ............ . - Stability, smoothness (base process with tape or dicing tape (back grinding: circuit) wafer (adhesive tape of chip adhesive, in process on the surface) In the formed state, the adhesive layer is removed during the adhesive process of the adhesive, and the adhesive film is adhered to the backside wear-reducing adhesive. The 1C wafer is transferred to the process 4 - (4) 1294646 in the film. The film forming direction and the wide direction are both 1.00 ° /. or less, and up to $. Further, according to the present invention, the above objects and advantages of the present invention can also be made from the second: the semiconductor crystal of the first aspect of the present invention. The substrate film for round processing, wherein the substrate film for semiconductor wafer processing is used for a back grinding belt or a dicing tape. Further, the above objects and advantages of the present invention can be achieved by the present invention. 3: The substrate for semiconductor wafer processing according to item 1 of the present invention is thin The film, wherein the amount of the extracting low polymer (extract 〇lig〇mer) of the film is 〇·8% by weight or less, and the refractive index in the thickness direction of the film is 15〇1 or more and 1.55 or less, and is achieved. According to a fourth aspect of the present invention, there is provided a back grinding belt according to the first or second aspect of the present invention, which has an adhesive layer on one surface of a base film for a back grinding belt. Alternatively, a dicing tape is obtained by providing at least one of a single layer of the base film for a dicing tape according to the first or second aspect of the present invention, which is obtained by the present invention. The above objects and advantages of the invention are the fifth aspect: a back grinding belt composite, which is provided on the adhesive layer of the back grinding belt of the fourth invention, and further has a release film or a dicing tape. The composite is achieved by at least any one of the adhesive sheets of the dicing tape of the fourth aspect of the invention (there is a release lining film on the layer). [Effects of the Invention] The semiconductor wafer processing base of the present invention Film, under high temperature and high humidity Excellent dimensional stability, smoothness and excellent mechanical strength (9) 1294646 can be different from each other. Particularly good phosphorus compound, methoxycarbonylmethylphosphonic acid, ethoxycarbonyl acid, propoxycarbonylphosphonic acid, butyl Oxycarbonylcarbonylphosphonic acid, methoxycarbonyldiphenyloxyacetic acid, ethoxycarbonylphosphorylphenylacetic acid, propoxycarbonylphosphinophenylacetic acid, and dimethyloxybisphosphorylphenylacetate Ester, dipropyl ester and dibutyl ester. In the present invention, the preferred reason for these phosphonate compounds is that the compound which is generally used as a stabilizer is relatively slow to react with the metal compound, and is polymerized. The duration of the metallization catalyst activity in the condensation reaction is long, and as a result, the amount of the catalyst in the polyester can be reduced, and even if an excessive amount of the stabilizer is added to the catalyst, the thermal stability is not easily affected. The addition period of the phosphorus compound may be any period as long as the transesterification reaction is completed. For example, the polycondensation may be carried out under reduced pressure at the atmospheric pressure at which the polycondensation reaction is started, and after the polycondensation reaction is started. After the completion of the condensation reaction, the polymer is added and added. The suitable content of the phosphorus compound is preferably from 20 to 100 ppm by weight in the poly-2,6-naphthalene dicarboxylate as the phosphorus element in the phosphorus compound from the viewpoint of thermal stability of the polyester. The polyethylene-2,6-naphthalenedicarboxylate of the present invention may be a user of naphthalene dicarboxylic acid and ethylene glycol as a raw material, or 2,6 represented by dimethyl 2,naphthalate. - An ester of naphthalene dicarboxylic acid forms a living organism and ethylene glycol as a raw material user. In the method of transesterification reaction, for example, under the pressure of 〇.〇5MPa or more 〇.20Mpa or less, the phosphine oxide dioxylate, due to the addition of the substance to the ester aptitude, should be observed before , 6 6 — Sexually derived manufacturing implementation -12- 1294646 do) The vinegar exchange reaction can reduce the amount of metal compound added. Further, the polyester used in the present invention may be subjected to fragmentation after melt polymerization, and solid phase polymerization may be carried out under heating and reduced pressure or in an inert gas stream such as nitrogen. For the purpose of reducing the extraction of low-polymer films, solid phase polymerization is also suitable in the present invention. Here, the intrinsic viscosity of the polymer obtained by using polyethylene-2,6-naphthalenedicarboxylate as a main product is preferably 〇.4〇dl/g or more and 0.90 dl/g or less. Further, the intrinsic viscosity is a ruthenium (unit: dl/g) measured at 25 ° C using o-chlorophenol as a solvent. &lt;Additive&gt; In the base film for semiconductor wafer processing of the present invention, in order to impart slidability to the film, it is preferred to contain the inactive particles in a small proportion. Examples of such inactive particles include inorganic particles such as spherical cerium oxide, porous cerium oxide, calcium carbonate, aluminum oxide, titanium oxide, kaolin clay, barium sulfate, and zeolite, or particles such as fluorenone resin. Organic particles of crosslinked styrene particles. Since the particle size of the inorganic particles is uniform, the synthetic product is better than the natural one. The crystal form, hardness, specific gravity, and color of the inorganic particles are not particularly limited and may be used as the purpose. Specific inorganic particles may, for example, be calcium carbonate, porous cerium oxide, spherical cerium oxide, kaolin, talc, magnesium carbonate, barium carbonate, calcium sulfate, barium sulfate, lithium phosphate, calcium phosphate, magnesium phosphate, and oxidation. Aluminum, cerium oxide, titanium oxide, chromium oxide, lithium fluoride, and the like. Among them, calcium carbonate particles, spherical cerium oxide particles, porous -13-(11) 1294646 cerium oxide particles, and plate-like aluminum silicate are particularly preferred. The organic particles may, for example, be organic salt particles or crosslinked polymer particles. The organic salt particles may, for example, be calcium acetate or a terephthalate such as calcium, barium, zinc, manganese or magnesium. Further, the crosslinked polymer particles may, for example, be a single body or a copolymer of an ethylene monomer such as divinylbenzene, styrene, acrylic acid or methylpropionic acid. Furthermore, organic particles such as polytetrafluoroethylene, anthrone resin, benzoguanamine resin, thermosetting epoxy resin, unsaturated polyester tree, thermosetting urea resin, and thermosetting phenol resin are also very Be applicable. Among the crosslinked polymer particles, particularly preferred are anthrone resin particles and crosslinked polystyrene particles. Further, the particle diameter of the inactive particles to be added to the film is preferably 0·0 5 // m or more and 5 // m or less, more preferably 0.0 8 μ ni or more for the average particle diameter of each of the particles. 5 / m or less, particularly preferably 0 · 1 Ο μ m or more 3 # m or less. Further, the total amount of the inactive particles contained in the film is preferably 〇 5 by weight. 5% or less, more preferably 3% by weight or more, more preferably 8% by weight or more, and 5% by weight or less, particularly preferably 〇·1% by weight or more and 1.0% by weight or less. The inactive particles to be added to the film may be a single component selected from the above-exemplified ones, or may be a multicomponent containing two or more components. Further, in the case of a single component, two or more kinds of particles having different average particle diameters may be contained. Here, the average particle diameter of the inactive particles is measured by the Centrifugal Particle Size Analyzer (product type) manufactured by Shimadzu Corporation, and the telecentric sedimentation curve obtained from the measurement is used as a basis. The calculation of the calculated particle size and the product of the amount -14 - (12) 1294646, and reading the particle size corresponding to 50% by weight (refer to "Particle Measurement Technology", Nikkan Kogyo Shimbun, 1 97 5th edition, pages 242 to 247). In the film of the present invention, it is particularly preferable that the carbonic acid particles having an average particle diameter of 0.3 // m or more and 0.8/im or less be 0.05% by weight or more and 0.4% by weight or less' and/or average. The spherical cerium oxide particles having a particle diameter of 0.1 m or more and 0.6 m or less are 0.03 by weight or more, or more than 0. 5 by weight, / 〇, and/or the average particle diameter is 〇·1 // m The above ketone ketone particles of 0. 6 μm or less are contained in a ratio of 〇3 wt% or more and 0.4 wt% or less. Further, particles having the same kind of inactive particles and having different particle diameters may be contained. As long as it is the same amount of inactive particles In the film of the present invention, a crystal nucleating agent, an oxidation preventing agent, a thermal stabilizer, a slip agent, a flame retardant, a charged fat stopper, a polyoxyalkylene, etc. may be blended depending on the use thereof. The addition period of the active particles or other additives is not particularly limited as long as it is in the stage of forming polyethylene-2,6-naphthalenedicarboxylate, for example, it may be added during the polymerization stage, or may be formed during the film formation. From the viewpoint of uniform dispersion, it is preferred to add inactive particles or other additives to the ethyl alcohol and add them in a local concentration manner during the polymerization to form a master chip, and the resulting main fragments are Addition of the dilution of the substrate. <Substrate film> The substrate film for semiconductor wafer processing of the present invention is a biaxially oriented oriented film obtained by using poly(2,6-caiformate) as a main component. -15- (13) 1294646 The base film of the present invention (hereinafter sometimes referred to as a film) may be a single layer or a plurality of layers of two or more layers, and a plurality of layers of two or more layers can be used. Flat surface with semiconductor The material and the film of the base film are suitable for the two sides. The means for forming the plurality of layers of two or more layers may be a coextrusion method, an extrusion layer method, a coating method, or the like, and is not particularly limited. From the viewpoint of productivity, it is preferred to use the above-mentioned polyethylene-2,6-naphthalenedicarboxylate and a co-extrusion method of extruding various resins from a plurality of extruders to constitute a plurality of layers. The substrate film for semiconductor wafer processing of the present invention is preferably used for a back grinding belt or a dicing tape. <Heat Shrinkage Ratio> The film of the present invention is heat-treated at 200 ° C for 1 minute. The shrinkage ratio is less than 1 · 〇〇% in the film forming direction and the width direction of the film. The heat shrinkage ratio of the film of the present invention is more preferably 0.20% or more and 0.80% or more. "Excellent is one 〇. 10% or more and 0 · 60% or less. In the present invention, unless otherwise specified, the direction of film formation refers to the direction in which the film is continuously formed, and may be referred to as the longitudinal direction, the longitudinal direction, the continuous film forming direction, or the MD (machine direction) of the film. Further, in the present invention, the wide direction means a direction perpendicular to the film forming direction in the in-plane direction of the thin moon, and is sometimes referred to as a lateral direction or a TD (transverse direction), for example, at a temperature of 200 ° C. When the heat shrinkage rate at the time of heat treatment exceeds 10.00%, the temperature during the processing of the semiconductor wafer becomes high. 'Because the size shrinkage of the substrate film increases, the wafer heats up. '16- (14) 1294646 The reason why the wafer is stuck from the belt during the halfway of the process is sometimes damaged due to the thin thickness of the wafer. If the heat shrinkage rate is -, that is, the thermal expansion of the substrate film during thermal expansion will be larger than that of the wafer, and the adhesive will wrap around from the peripheral portion of the wafer to the other end, such as shrinkage or expansion of the film. In any case, the present invention is unfavorable because of the difference between the expansion ratio of the wafer and the expansion rate of the wafer. Further, when the expansion ratio of the expansion ratio of the film is large, the wafer side is used as the inner side to cause the wafers to compete with each other, and it is necessary to prevent as much as possible, that is, the heat shrinkage rate becomes a negative direction. Further, in order to produce biaxial stretching and heat-fixing in the production of a thin film having a desired heat shrinkage ratio, it is preferable to relax the treatment. &lt;Extraction of low polymer amount&gt; The oligomer extraction amount of the film of the present invention is preferably 0.8% by weight or less, more preferably % by weight or less, and particularly preferably 0.5% by weight or less, under the conditions of 24 hours of use. For example, when the polymerization is less than 0.8% by weight, when used as a semiconductor wafer, the polymer may be deposited on the surface of the substrate film during the processing temperature in the process or in the adhesive layer, which may cause contamination or adhesion. The bonding strength between the agent layer and the substrate film. In order to prevent the precipitation of low polymer on the surface of the film, it is best to reduce the low polymer contained in the film, and the present agent is detached, -0.2 0 ° /. The following thermal expansion is the wafer surface. In the range, the semiconductor film is placed on the upper surface of the film, and the film is expanded. For the purpose of re-implementing hot chloroform, the extraction is preferably carried out. An effective method for the problem of low processing during processing, etc. -17 - (16) 1294646 Reducing the stretching ratio in the longitudinal direction or the transverse direction can be achieved. &lt;Difference in Distribution of Thickness of Tantalum Film&gt; The difference in thickness of the film thickness of the present invention is preferably 15% or less, more preferably 1% by weight or less, particularly preferably 8% or less, to the film. Since the smaller the difference in the thickness distribution of the film, the bonding strength between the back grinding tape and the bonding surface of the semiconductor wafer and the dicing tape and the semiconductor wafer is uniform, and a stable tape bonding can be achieved. Therefore, more precise back grinding and cutting can be achieved, and as a result, a wafer which is highly suitable for high precision and high density can be supplied. &lt;Young's modulas&gt; The Young's flexural modulus of the film of the present invention is preferably 5 400 MPa or more and 6 9000 MPa or less, more preferably in the film forming direction and the wide direction of the film. It is 5 5 00 MPa or more and 6 8 0 0 Μ P a or less, and particularly preferably 5 6 0 0 Μ P a or more and 6700 MPa or less. Further, the difference in the Young's flexural modulus in both directions is preferably 100 MPa or less. If the Young's flexural modulus is below 5,400 MPa, the rigidity of the film may be insufficient. As a result, the substrate film for semiconductor wafer processing with high elastic modulus of the polyethylene-2,6-naphthalate film is used. Thinning may be difficult. Further, if the Young's flexural modulus exceeds 6,900 MPa, a large amount of chips are likely to be generated when the film is cut, and there is a possibility of contamination in a clean state. Further, since the cutting of each of the cut wafers is difficult from the expansion of the tape or from the top of the wafer on the tape side, the production efficiency is lowered. -19 - (17) 1294646 &lt;Surface roughness (Ra ) &gt; The center line average surface roughness (RO, preferably 3 nm or more and 80 nm or less) of at least one surface of the film of the present invention is more preferably 60 nm or less. More preferably, it is 7 nm or more and 50 nm or less. Further, when the film is composed of a plurality of layers of two or more layers, the sum of both sides of the film is preferably lOnm or more, more preferably 14 nm or more. Here, the center line average rough degree ( R a ) is in accordance with the method specified in j I s B - 0 6 0 1 , the cut-off is 〇.25mm, and the measurement is based on the radius m and the surface roughness meter is used. The product name "Shafo Koda SE - 3 0 C" or "shares" is manufactured by Tokyo Precision Co., Ltd. under the trade name "Shawocomm ^ 3 CK". If Ra is 3 nm or less, The slidability of the film is not good, and the film is easily handled on the surface of the film during the manufacture of the film or when the film is taken up. 2 When the film is taken up in a roll state, the air that is caught between the film and the film does not easily escape. However, the air may be trapped by the generated air to damage the planarity of the film. On the other hand, if Ra exceeds 80 In the case of nm, the slidability of the film is too good, so that when the film is taken up, or the adhesive layer is applied to the surface of the film and wound up after the tape is formed, there is a possibility that the winding may be misaligned frequently. &gt; The film density of the present invention is preferably 1.3.56 g/cm3 or more, more preferably 1 3 5 7 ^_3 or more, and 1362 §/_3 or less. If the density is 1.3 5 6 g/cm 3 or less When the film is low in crystallinity, - 20- (18) 1294646 may not be sufficient in dimensional stability during semiconductor wafer processing. Also, if the density exceeds 1.3 64 g/cm3, the crystallinity is too high. When the toughness of the film is lost, the tape is easily broken when the tape is formed on the back grinding belt or the substrate of the dicing tape. Here, the density of the film is a density gradient tube using a solution of gold nitrate aqueous solution as a solvent (density- In the gradient tube), the average thickness of the film of the present invention is preferably 9//m or more and 150//m or less. 9 / m or more 1 2 5 μ m or less, especially preferably 1 2 # m or more 〇〇 m # m or less. If the average thickness of the film is 9 # m or less, the mechanical strength of the support or the protective function of the wafer surface may not be sufficient during wafer processing. On the other hand, if the average thickness of the film exceeds 5 5 〇 / At /m, the rigidity of the film will be extremely strong, and if the adhesive strength of the tape is slightly higher, the wafer may be damaged when the tape is peeled off, or the force for expanding the film after cutting may be excessive. &lt;Moving friction coefficient&gt; The coefficient of dynamic friction (μd) between the films of the film of the present invention is preferably 0.5 or less. If the dynamic friction coefficient (# d ) exceeds 〇·5, the handling in the film forming process and the adhesive layer coating process is not good, for example, during walking on the roll in the process or winding into a roll. Wrinkles or scratches may occur during the shape. -21 - (19) Ϊ294646 &lt;Difference in heat shrinkage rate&gt; The heat shrinkage rate of the film at the time of heat-shrinking treatment of the film of the present invention at 200 ° C for 1 Torr for 10 minutes The absolute 値 (| SMD — STD | ) of the difference between the thermal shrinkage (SMD) of the film forming direction of the film and the heat shrinkage rate (. s TD ) in the wide direction is 〇·6 〇% or less. The 値 is preferably 0. 5 % or less 'extra good is 0 · 4 0 °/. the following. If the absolute value of the difference in heat shrinkage ratio exceeds 0.000%, the anisotropy of the dimensional change of the film when used as a base film of the back grinding belt or the dicing tape may cause a ruthenium of the semiconductor wafer. . &lt;Back grinding belt&gt; The back grinding belt of the present invention has an adhesive layer on one surface of the above-mentioned base film for back grinding belt. In the back grinding process which is the honing process of the back surface of the semiconductor wafer, the back grinding tape which contains an adhesive on one surface layer of the back surface grinding base film is used for fixing the silicon wafer. , that is, the wafer can be fixed in a stable state. &lt;Cutting Tape&gt; The dicing tape of the present invention has an adhesive layer on one surface of the above-mentioned base film for dicing tape. In the cutting process which is a process of cutting a 1C wafer from a semiconductor wafer, a dicing tape in which an adhesive layer is laminated on one surface of a substrate film for dicing is used for fixing the ruthenium wafer, that is, it can be stabilized The state is fixed on the wafer. -22· (20) 1294646 &lt;Coating layer&gt; The base film for a back grinding belt or a dicing tape of the present invention may be at least 1 for the purpose of improving adhesion to an adhesive. A coating layer is provided on each side. The coating layer is preferably a water-soluble or water-dispersible polymer resin selected from the group consisting of polyester resins, urethane resins, acrylate resins, and vinyl resins, and particularly preferably contains a polyester resin. And acrylate of acrylate resin. The polyester resin of the coating layer used in the present invention has a glass transition temperature (Tg) of from 0 to 100 ° C, more preferably from 10 to 90 ° C. The polyester resin is preferably a soluble or dispersible polyester in water, but may contain several organic solvents. Such a polyester resin is formed from a polybasic acid or an ester-forming derivative thereof as described below and a polyhydric alcohol or an ester-forming derivative thereof. That is, the polybasic acid component may, for example, be terephthalic acid, isophthalic acid, phthalic anhydride, 2,6-naphthalenedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, adipic acid, Azelaic acid, trimellitic acid, pyromellitic acid, dimeric acid, 5-sodium sulfoisophthalic acid, and the like. Two or more of these acid components are used to synthesize a copolymerized poly@ self-resin. Further, although a certain amount, a maleic acid such as an unsaturated polybasic acid component, itaconic acid or the like, and a hydroxycarboxylic acid such as p-hydroxybenzoic acid may be used. Further, the polyhydric alcohol may, for example, be ethylene glycol, 1,4-butanediol, diethylene glycol, dipropylene glycol, 1,6-ethylene glycol, 1,4-cyclohexanedimethanol, or hydrazine. a diol, a dimethylolpropane, a poly(ethylene oxide) diol, a poly(epoxypentane) diol, a bisphenol A, an ethylene oxide or a propylene oxide adduct of bisphenol A, However, it is not limited to this. The glass transition temperature of the acrylate resin of the coating layer used in the present invention (-23-(21) 1294646

Tg) is -50 to 50 ° C, more preferably 50 to 25 ° C. The acrylate resin is preferably a water-soluble or dispersible acrylic resin, but may contain a plurality of organic solvents. Such an acrylate resin can be copolymerized from an acrylate monomer as described below. The acrylate monomer may, for example, be an alkyl acrylate or an alkyl methacrylate (alkyl group, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, or the like). Tertiary butyl, 2-ethylhexyl, cyclohexyl, etc.; 2-hydroxy hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-propyl hydroxy acrylate, 2-hydroxy methacrylate a monomer of a hydroxyl group; an epoxy group-containing monomer such as glycidyl benzene acrylate, glycidyl methacrylate or allyl glycidyl ether; acrylic acid, methacrylic acid, itaconic acid, maleic acid, a carboxyl group such as fumaric acid, crotonic acid, styrenesulfonic acid or a salt thereof (sodium salt, potassium acid, ammonium salt, tertiary amine salt, etc.) or a monomer containing the same; acrylamide, methacrylamide , N-alkyl acrylamide, N-alkyl methacrylamide, N,N-dialkyl acrylamide, N,N-dialkyl methacrylate (alkyl, methyl, Ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tert-butyl, 2-ethylhexyl, cyclohexyl, etc.), N-alkoxy Indoleamine, N-alkoxymethylpropenylamine, N,N-dialkoxypropenylamine, N,N-dialkoxymethylpropenylamine (alkoxy, methoxy, B Oxyl, butoxy, isobutoxy, etc.), acryloyl morpholine, N-methylol acrylamide, N-methylol methacrylamide, N-phenyl acrylamide, N- An amine group-containing monomer such as phenylmethacrylamide; a monomer of an acid anhydride such as maleic anhydride or itaconic anhydride; vinyl isocyanate, allyl isocyanate, -24-(25) 1294646 - hydroxyethyl acrylate or 2-hydroxyethyl methyl monohydroxypropyl acrylate, 2-hydroxypropyl methyl propylene glycol acrylate, polyethylene glycol methacrylate, etc. The ester acrylate-based low polymer is at least one or more radiation polymerizable compounds. For example, when such a urethane acrylate is low in molecular weight of 3,000 to 30,000, preferably 3,000 is preferably 4,000 to 8,000, even in the case of a semiconductor, after the wafer is wafer It is appropriate to take the surface of the wafer still unacceptable. Further, when ethyl urethane acrylate is used as the radiation polymerizable compound, it is preferable to use a carbon-carbon double bond in the molecule as disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. When the amount of the low molecular weight compound is more than one, it is extremely excellent as an adhesive sheet. That is, the adhesion force before the adhesive sheet is sufficiently large, and the adhesion force after the radiation irradiation is sufficient that the adhesive does not remain on the surface of the wafer when the wafer is being picked up, and if necessary, in the adhesive, except as described above. In addition to the radiation polymerizable compound, ruthenium may contain a compound that is irradiated with radiation. By irradiating the colored adhesive layer with such radiation, the radiation can be colored by irradiating the adhesive sheet. Thus, when a photosensor is used to detect wafer wafer detection accuracy, the wafer wafer is processed. When it is taken, it is not allowed to be sent and can be visually observed to immediately determine whether there is a line effect on the adhesive sheet. Acrylate, 2 acid ester, polyethylene (produced. This ~ carbon-carbon double bond: compound and special [10000, more! Round surface rough adhesion adhesive low polymer is photopolymerizable in Japanese patent, It can produce radiation radiation enough to reduce the color, and the composition which is colored by the adhesion agent and the radiation can be used to improve the accidental action immediately after the sheet is covered. Irradiation -28- (27) 1294646 &lt;Cutting Tape Complex&gt; In the present invention, the dicing tape is usually stored in a state in which the surface of the adhesive layer is protected by the film-backed film, and the release film is peeled off and used in the cutting process. The dicing tape composite of the invention has a release film on the adhesive layer of the dicing tape. The release film is a ketone release layer on one surface layer of the base film made of polyester. In this case, the ketone release layer and the adhesive layer of the dicing tape are bonded to each other to form a dicing tape composite. The release film can be formed between the base film formed by the ketone release layer and the polyester. There is a primer layer. Polyester base film of the molded film&gt; The polyester base film constituting the release film of the present invention may be composed of the same polyester as the base film for semiconductor wafer processing of the present invention, but may be different. Such a polyester may, for example, be a polyester containing polyethylene terephthalate or polyethylene-2,6-naphthalate as a main component. Here, it mainly means a constituent of a polymer. At least 80% by mole of the total repeating unit is ethylene terephthalate or ethylene 2,6-naphthalenedicarboxylate, more preferably 90% by mole or more, particularly preferably 95% by mole or more. In addition, the polyester base film constituting the release film is irradiated with ultraviolet rays to cure the adhesive after the back grinding and cutting, and the light transmittance of the base film is lowered. Preferably, it is 85% or more. -30-(28) 1294646 &lt;Anthraquinone release layer&gt; The fluorenone oxime layer constituting the release film of the present invention, for example, a coating liquid for curable anthrone After drying and solidifying the polyester substrate film, it can be formed. Curable anthrone resin: condensation reaction Addition of a reaction system, ultraviolet light or electron beam to a reaction system can be carried out from such a curable fluorenone resin. <Production conditions> The method for producing a substrate film of the present invention will be described in detail. a film of a 6-naphthalenedicarboxylate base film, which is obtained by melt-extruding a film-like melt obtained by melt-extruding at a temperature lower than the melting point (hereinafter referred to as Tm), and is rapidly cooled on the surface of the cylinder. The intrinsic viscosity is 0.40 to an unstretched film. In the process, an electrostatic sealing method for a film-like molten charge is known for the purpose of improving the film-like melting but the adhesion between the rolls. 2,6—The higher the electrical resistance of the melt of the cedar ester, sometimes it is not enough to be cool and tight with the above. For this reason, a wholly bifunctional carboxylic acid component of -ethylene naphthalate, and a sulfonic acid quaternary phosphonium containing 10 mol% of an ester-forming functional group are preferred. The unstretched film thus obtained is stretched in the longitudinal direction at a temperature of from 130 ° to 160 ° C at a temperature of from 130 ° to 160 ° C at a rate of from 2.8 to 3., and then in the transverse direction at j 2 〇 to] For example, one type of surface may be used, and one type of curing system may be used as described above. The present invention has a rotating chill roll of 90.90 dl/g in a conventional extrusion Tm + 70 〇C) and a static cold melt imparted to the static dicarboxylic acid ethane but the pair of bis-2,6 has 0.1 +, More preferably, it is stretched by 5 times at a temperature of -C - (29) 1294646 and stretched at a draw ratio of 2.8 to 3.6 times to form a biaxially oriented film. Here, if the lateral stretching ratio is made into a magnification of 0.90 to 1.5 times the longitudinal stretching ratio, the difference in the thickness distribution of the film can be made into a desired range. Again, such stretching operations can be multi-stage stretching that is performed separately for the multiple stages. The biaxially oriented oriented film obtained in this manner is preferably heat-set at a temperature of from 240 ° C to 25 ° C, more preferably from 240 ° C to 250 ° C for from 0.3 to 20 seconds. Then, for the purpose of lowering the heat shrinkage rate, it is more preferable to carry out the heat relaxation treatment in the range of 0.5 to 15% of the relaxation rate in the longitudinal direction and/or the transverse direction. Further, from the viewpoint of the mechanism of the stretching machine, the relaxation in the transverse direction is generally easy to carry out, and it is easy to make the heat shrinkage ratio in the transverse direction close to 0%. On the other hand, since it is difficult to obtain the heat shrinkage ratio in the longitudinal direction, particularly the heat shrinkage ratio in the vicinity of 200 °C, it is effective to use the above-described stretching ratio and stretching temperature in the longitudinal direction and the transverse direction. Further, the polyester film of the present invention is preferably subjected to heat treatment after winding, in addition to the above heat treatment. The heat treatment method after coiling is not specific, but it is particularly preferred as a sagging relaxation heat treatment method. The sag type relaxation heat treatment method can be exemplified by passing the treated film through the roller provided above and sag downward due to its own weight, and heating therein and then being cooled by the lower roller to change the direction to a slightly horizontal direction, using A nip roller that breaks the take-up tension and then takes it up. The drooping distance is about 2 to 1 〇m. If it is less than 2 m, the flatness is easily lost due to its own weight, and it is very difficult to obtain a slack effect due to the short heating range. On the other hand, if the following vertical distance exceeds 10 m, the workability is poor and the self-weight will be aggravated, and the center line average roughness (Ra ) of the -32-(33) Ϊ 294646 (6) is JIS B - 06 For the method specified in 0, the unloading line is 〇·25ηιηι, the measuring stylus is used with a radius of 3 /im, and the surface roughness meter is used (the product name of "Tokyo Precision Co., Ltd." is Shafcombe SE-3 CK. ”Measurement (7) Thickness of the film is measured by the micrometer (manufactured by Anritsu Co., Ltd., trade name “K — 4 0 2 B type”) in the film forming direction (MD) and width direction (TD) of the film. The measurement was performed at intervals of 10 cm, and the thickness of the film at 300 was measured in total. The average enthalpy of the obtained film thickness of 300 was calculated to obtain the average thickness of the film. Furthermore, an electronic micrometer (Arichi (.), the product name "] &lt;: a 312-eight type" is used, and the needle is pressed by 3 (^, the traveling speed is 2,5111,111 / sec. (MD) and wide direction (TD) are measured for each 2m length to obtain a continuous thickness chart. From this chart, the maximum thickness t](m) and the minimum thickness of 12 ( // m ) are read. The thickness t〇(# m ) and the maximum thickness II ( // m ) and the minimum thickness t2 ( // m ) are obtained by the following equation (3) to find the difference in thickness D (%). D ^ [ ( t ] — t])/t〇]xlOO ......... (3) (8) Dynamic friction coefficient (// d ) -36- (34) 1294646 will be 75mm (wide) x 〇〇 mm ( On the cut film (·sample) of the length), a weight of 200g, which is a load w(g), is placed on the two pieces, and the upper film is slid at a speed of 150 mm/min. The force F d ( g ) is calculated as the coefficient of dynamic friction (# d ). Here, the film is measured at 25 ° C, 65% RH (relative humidity) for 24 hours and then measured.

Dynamic friction coefficient = Fd / W (9) The difference between the heat shrinkage rate in the oven at a set temperature of 200 ° C, the film is held for 1 minute in a state of no tension, in the film forming direction (MD) and width of the film. In the respective directions of the direction (TD), the dimensional change from the respective heat treatments is the same as (1) the heat shrinkage rate, and the heat shrinkage ratio S is calculated according to the following formula (1) to calculate the absolute difference between the heat shrinkage ratios in the two directions.値: S=[ L〇— L ) /L〇]xlOO ......... (1) Here, respectively, φ L〇: distance between punctuation points before heat treatment, L: between punctuation after heat treatment distance. (1 〇 ) Density # The JIS C2151 was used to measure the density of the biaxially oriented poly(ethylene-2,6-naphthalate) film. (Π) Water absorption rate -37-(36) 1294646 For the biaxially oriented orientated polyethylene-2'6-naphthalate film of each of the examples and the comparative examples, the film was formed to have a thickness of 14/m. An acrylate-based adhesive (a copolymer of n-butyl acrylate and acrylic acid) was applied to prepare an adhesive sheet. 8 Å wafers were attached to the adhesive layer of the obtained adhesive sheet to perform the back grinding and stripping tests of the wafer. Here, the test conditions were the back grinding processing temperature: 18 (TC, heat treatment temperature before stripping: 150 ° C. [Example 1]

Adding manganese acetate to a mixture of 100 parts of 2,6-naphthalenedicarboxylic acid dimethyl vinegar and 60 parts of ethylene glycol, 0.03 parts of 4 crystal water salt, and performing transesterification under the condition of gradually raising temperature from 150 ° C to 240 ° C . Here, when the reaction temperature reached 170 ° C, 0.024 parts of cerium oxide was added, and 0.2 weight of spherical cerium oxide particles having an average particle diameter of 0.4 // m and a particle diameter ratio of 1:1 was added. /〇. Further, 0.042 parts of 3,5-dicarboxybenzenesulfonic acid tetrabutylsulfonate (corresponding to 2 mmol%) was added when the reaction temperature reached 220 °C. Then, the transesterification reaction was continued, and after the transesterification reaction was completed, 23 parts of trimethyl phosphate 〇·〇 was added. Next, the reaction product was transferred to a polymerization reactor and heated to 290 ° C, and a polycondensation reaction was carried out under a high vacuum of 〇. 2 mmHg (mercury) column to obtain an o-chlorophenol solution at 25 ° C. The polyethylene-2,6-naphthalenedicarboxylate polymer (abbreviated as "Polymer C") having an intrinsic viscosity of 0.62 dl/g was measured. The polymer was dried at 170 ° C for 6 hours, supplied to an extruder, melted at a melting temperature of 305 ° C, and passed through a slit-shaped neck of a 1 mm opening to be extruded on the surface. 0.3 S, surface temperature 50 ° C -39- (37) 1294646 on a rotating drum to produce an unstretched film. The unstretched film thus obtained was stretched 3.3 times in the longitudinal direction (film forming direction) at 145 ° C, and then stretched 3.4 times in the transverse direction (wide direction) at 140 ° C, and then Coiling at 243 °C for 5 seconds and shrinking it to 5% (toe - in) in the width direction, and winding a biaxially oriented PEN film with a thickness of 16 // m and an intrinsic viscosity of 0.52 dl/g It is a roll of 1 500 mm wide and 300 m. Then, the obtained biaxially oriented PEN film is passed down through the nip roller provided above and hangs downward due to its own weight, and is heated by the infrared heating device to a film temperature of 22 5 ° C. The direction is changed to a horizontal direction by the nip roller set at a position lower than 4 m, and the winding tension is blocked by a nip roller and then taken up to perform a relaxation heat treatment. The speed is determined by the difference between the speed of the upper nip roller and the nip roller which performs the winding tension interruption. The biaxially oriented PEN film obtained by the relaxation heat treatment thus obtained was designated as Example 1. The results of the evaluation of the properties of the film of the obtained Example 1 are shown in Table 1. In the wafer processability of the film of Example 1, there was no problem caused by the malfunction of the die bonder device due to the thermal dimensional change of the film, the poor thickness distribution of the film, or the planarity of the film. And can achieve a good capture operation. Further, in the process of coating the contaminated adhesive layer and in the processing of the semiconductor wafer, the film is not broken at the time of tape peeling, and the workability in the manufacture of the semiconductor wafer is good. (38) 1294646 [Example 2] Except that the draw ratio in the longitudinal direction was 2.9 times, the draw ratio in the transverse direction was changed to 3.1 times, and the sagging relaxation heat treatment was not carried out, and the others were repeated and the examples were repeated. 1 The same operation was carried out to obtain a biaxially oriented directional PEN film having a thickness of 7 5 // m. The results of the evaluation of the properties of the film of the obtained Example 2 are shown in Table 1. In the wafer processability of the film of Example 2, the defect caused by the malfunction of the die bonder device due to the difference in the thickness distribution of the film or the planarity of the film does not occur. , and can achieve a good capture operation. Further, in the process of coating the contaminated adhesive layer and in the process of processing the semiconductor wafer, the film is not broken at the time of tape peeling, and the workability in the manufacture of the semiconductor wafer is good. [Example 3] In Example 3, a film having a two-layer structure was produced by the following method. First, 3 parts of acetic acid, 4 crystallization water, 〇·〇, were added to a mixture of 2 parts of dimethyl 2,6-naphthalene dicarboxylate and 60 parts of ethylene glycol, and the temperature was raised from 150 ° C. The transesterification reaction was carried out up to 240 °C. Among them, when the reaction temperature reached 1 7 〇 ° C, cerium oxide 0 · 〇 24 parts was added, and 0.15 wt% of the acid granules having an average particle diameter of 0 · 5 / m was added. Further, when the reaction temperature reached 2,200 ° C, 4,5 parts of tetrabutyl 5,5-dicarboxybenzenesulfonate 相当于 · 〇 (equivalent to 2 mmol/〇) was added. Then, the transesterification reaction was continued, and after the transesterification reaction was completed, trimethyl phosphate 〇·〇 2 3 parts was added. Next, the reaction product was transferred to a polymerization reactor and heated to 290 ° C, and subjected to a polycondensation reaction under a high vacuum of -41 - (39) 1294646 0.2 mmHg column to obtain an o-chlorophenol solution of m The polyethylene-2,6-naphthalenedicarboxylate polymer (abbreviated as "Polymer A") having an intrinsic viscosity of 0.63 dl/g was measured. Further, the transesterification reaction was carried out in the same manner as in the case of the polymer A, except that the amorphous ceria was added as a polymerization catalyst, and the average particle diameter was 0 · 1 / m, and the particle diameter ratio was 1 · 1 The globular dioxin particles 〇 〇 5% by weight, and the others were polymerized in the same manner as in the polymer A to obtain 2 5 . (2:6-naphthalenedicarboxylate polymer (abbreviated as "Polymer B") having an intrinsic viscosity of 0·63 dl/g as determined by the o-chlorophenol solution. After drying at 170 ° C for 6 hours, two extruders were supplied, respectively, which were melted at a melting temperature of 300 Å, and subjected to a slit die having a degree of opening of 1 mm by a co-extrusion method. A two-layered unstretched film was obtained by surface finishing 〇·3 S on a rotating roll having a surface temperature of 50° C. The unstretched film was sequentially biaxially applied in the same manner as in Example 1. Stretching and heat setting, the film thickness is 1 6 // m (1 0 // m on the side of polymer A layer, 6 // m on the side of polymer B layer), and the characteristic viscosity is 双· 5 4dl/g. The stretch oriented PEN film was taken up in a roll shape of 1 500 mm wide and 30000 m. Then, the obtained biaxially oriented directional PEN film was used in the same manner as in Example 1 using the same sagging type relaxation heat treatment device' A relaxation heat treatment was carried out. The biaxially oriented PEN film obtained by the relaxation heat treatment thus obtained was designated as Example 3. The film of the obtained Example 3 was The evaluation results are shown in the table. The wafer processability of the films of the examples does not particularly occur due to the thermal dimensional change of the film, the poor film thickness distribution or the planarity of the film, etc. -42- (40) 1294646 caused by the malfunction of the die bonder device, and can achieve a good picking operation. Moreover, it does not contaminate the adhesive layer coating process and the semiconductor wafer processing process, and when the tape is peeled off The film was not broken and the workability in the production of the semiconductor wafer was good. [Comparative Example 1] A 50/m film of "Caboton Type H" manufactured by Toray Dupont was used. The results are shown in Table 1. Although the thermal dimensional change of the film was very excellent, it was inferior in dimensional stability under high humidity due to high water absorption. [Comparative Example 2] Dimethyl terephthalate 1 00 parts of a mixture with 60 parts of ethylene glycol is added with 3 parts of acetic acid, 4 crystallization water, 〇·〇, and the transesterification reaction is carried out under the temperature from 150 ° C to 24 ° C. When the reaction temperature reaches 170 ° C Adding cerium oxide 0·0 2 4 parts, and adding an average particle diameter of 0.4 // m, the spherical oxidized sand particles of the particle ratio of 1:1 are 2% by weight, and when the reaction temperature reaches 2 2 0 °C Add 3,5-dicarboxybenzenesulfonic acid tetrabutyl ketone 0. (Η2 parts (equivalent to 2 millimoles). Then, continue the transesterification reaction, and after the transesterification reaction is completed, add the pity three Methyl ester 〇. 〇 2 3 parts. Next, the reaction product was transferred to a polymerization reactor and heated to 290 Torr, and a polycondensation reaction was carried out under a high vacuum of 0.2 mmHg or less to prepare an argon phenol at 25 ° C. A polyethylene terephthalate polymer having an intrinsic viscosity of 0.62 dl/g as determined by the solution. The polymer was dried at 7 7 ° C for 3 * 43 - (41) 1294646 hours, and then supplied to an extruder, melted at a melting temperature of 290 ° C, and passed through a slit die having a degree of opening of 1 mm, and extruded. The surface was finished with a 0.3S surface and a rotating roll having a surface temperature of 25 ° C to prepare an unstretched film. The unstretched film thus obtained was stretched 3.2 times in the longitudinal direction (film forming direction) at 90 ° C, and then stretched 3.8 times in the transverse direction (wide direction) at 120 ° C, and then Heat-fixing at 2 10 °C for 5 seconds and shrinking it by 5% ( t 〇e - i η ) in the width direction, and the thickness is 1 6 // m, and the characteristic viscosity is 0.55 dl/g. The stretched oriented polyethylene terephthalate film was taken up in a roll shape of 1 500 mm wide and 3 000 m. Then, the obtained biaxially oriented orientated polyethylene terephthalate film is sagged down through the nip roller provided above, and is heated downward by the infrared heating device to become a film temperature. After the method of 80 ° C, the direction is changed to the horizontal direction by the nip roller which is located at the upper side of the roller set below 4 m, and the winding tension is blocked by the nip roller and then taken up to perform the relaxation heat treatment. . The slack is performed in such a manner that the speed between the nip roller and the nip which is interrupted by the winding tension is different. The thus obtained biaxially oriented orientated polyethylene terephthalate film after the relaxation heat treatment was used as Comparative Example 2. The results of the evaluation of the properties of the obtained film of Comparative Example 2 are shown in Table 1. In terms of wafer processability, the dimensional stability of the film is deteriorated, and the positional shift of the wafer or the like occurs, resulting in a malfunction due to a malfunction of the die bonder device. Also, the low polymer precipitation amount will contaminate the adhesive layer and the extent of the semiconductor wafer process. Further, the low polymer precipitation rate on the surface of the film after heating is also high. -44 - (42) 1294646 [Comparative Example 3] In Comparative Example 3, the same operation as in Example 2 was repeated except that the stretching ratio in the longitudinal direction was 3.6 times and the stretching ratio in the transverse direction was changed to 3.7 times. A biaxially oriented PEN film having a thickness of 50 // m was obtained. The result of the characteristic evaluation of the obtained Comparative Example 3 is shown in Table 1. The thermal dimensional change of the film exceeded 1.00% in both the longitudinal direction and the lateral direction of the film. Wafer processability occurred, and the positional shift of the wafer occurred. Defects caused by malfunction of the adapter device. [Comparative Example 4] In Comparative Example 4, the same operation as in Example 1 was repeated except that the stretching ratio in the longitudinal direction was changed to 3.6 times and the stretching ratio in the transverse direction was changed to 3.9 times. Drooping relaxation heat treatment, system 20 / m biaxial stretching oriented PEN film. The result of the characteristic evaluation of the obtained Comparative Example 4 is shown in Table 1. The thermal dimensional change of the film exceeded 1.00% in the longitudinal direction of the film, and the positional shift of the wafer occurred in the case of wafer addition, and the result was caused by the die connection. Bad conditions caused by malfunction of the device. And with real orientation. Thin, it is a cause, and it is thick. Thin workability -45- 1294646 Comparative Example 4 Single layer I polymer c 1 spherical oxidized inch inch · 〇 0.20 rn ON rn ο (Ν 225 0.52 inch 1.10 0.30 6400 7000 wo 1.358 1 1 1 1 Comparative example of bad 3 Single layer polymer c Spherical yttrium oxide inch 〇 0.20 rn r- rn ο m inch (Ν No treatment | 0.52 ! Ό 〇 6500 6600 VO 1.357 1 1 1 1 Poor defect Comparative example 2 Single layer 1 spherical yttrium oxide Inch 〇0.20 &lt;N rn S 00 rn ο (Ν 210 1 § 0.55 〇〇0.60 0.10 5300 5250 〇〇1 X inch CD X bad bad comparison example 1 single layer 1 1 1 1 1 1 1 1 1 1 II 0.20 0.10 3700 3700 1 1 1 1 rn τ· i X {〇&gt;( -23⁄4 Example 3 H5 (SJ Polymer B Calcium Carbonate Ο 0.05 m rn ο τ—^ m Art 225 1 0.54 j 〇〇 0.50 0.05 1 6100 1______________ 6200 1_inch 1.360 ο 〇rn O 〇 calcium carbonate κη ο κη ο ON Example 2 Single layer polymer C globular oxidized 矽 inch · ο 0.20 _I Os oi m ο m No treatment I 0.52 | ν—^ 0.80 0.30 1 5600 1_ 5800 1_ VO 1.362 ο 〇mo 〇Example 1 Single layer polymer C spherical cerium oxide pair ο 0.20 ΓΊ rn inch Rn ο Ν 225 225 225 225 0 0 0 0 0 0 Cm Weight % 1 Processability of semiconductor wafers (back grinding and cutting) Processability of semiconductor wafers (back grinding and stripping) Particle size addition rate problem SI rate temperature heat setting temperature pain rnM 骢ΤΗ \&gt;~;1 Excitation - film characteristic viscosity film thickness thickness distribution difference | vertical (MD) 1 transverse (TD) vertical (MD) transverse (TD) surface roughness density low polymer extraction amount heating low polymer precipitation rate water absorption rate Size stability added particles 1 Longitudinal tensile transverse stretching heat shrinkage Young's flexural modulus (44) 1294646 [Example 4] 100 times of ethylene 2,6-naphthalenedicarboxylate and 60 parts of ethylene glycol To the mixture was added 0. 03 parts of manganese acetate 4 crystal water salt, and the transesterification reaction was carried out by gradually raising the temperature from 150 ° C to 240 ° C. In this case, when the reaction temperature reaches 17 (TC), 0.024 parts of antimony trioxide is added, and then an average particle diameter of 〇. 6 // m is added, and the spherical cerium oxide particles having a particle diameter ratio of 1:1 are 0·1% by weight. When the reaction temperature reaches 220 ° C, 0. 04 2 parts of tributylphosphonium 3,5-dicarboxybenzenesulfonate (equivalent to 2 mmol%) is added. Then, the transesterification reaction is continued and the transesterification is carried out. After the completion of the reaction, 0.023 parts of trimethyl phosphate was added. Then, the reaction product was transferred to a polymerization reactor and heated to 290 ° C, and a polycondensation reaction was carried out under a high vacuum of 0.2 mmHg or less to obtain 2 5 °. Polyethylene 2,6-naphthalenedicarboxylate polymer (abbreviated as "Polymer D") having an intrinsic viscosity of 0.4 3 dl/g as measured by an o-chlorophenol solution of C and an intrinsic viscosity of 〇.69 dl/g Polyethylene 2,6-naphthalenedicarboxylate polymer (referred to as "Polymer E"). Polymer E was further solid phase polymerized to give an intrinsic viscosity of 7878 dl/g (Polymer F). The polymer E was dried at 170 ° C for 6 hours and then supplied to an extruder, which was melted at a melting temperature of 305 ° C and passed through a opening of 1 mm. The slit die is extruded on the surface finishing 〇· 3 S, surface temperature 5 (the rotating drum of TC to produce an unstretched film. The unstretched film thus obtained is at 1 4 5 ° C Stretching 3 · 0 times in the longitudinal direction (film forming direction), then stretching 3.0 times in the transverse direction (wide direction) at 1 4 〇 ° C, and then heat-fixing at 2 4 6 ° C for 5 seconds. The bell and the biaxially oriented PEN film roll which shrinks by 4% ( t 〇e — i η ) in the width direction and has a thickness of 30 m and an intrinsic viscosity of -47-(45) 1294646 degrees 0.59 dl/g Take the roll shape of 1 500 mm wide and 3000 m. Then, the obtained biaxially oriented PEN film is used to pass the nip roller set above and hang down below due to its own weight, and infrared rays are used therein. After the heating device is heated to a mode in which the film temperature can be 2 2 5 ° C, the direction is changed to a horizontal direction by the nip roller located below the roller set at 4 mm, and the tension is taken up by the nip roller. After the interruption, the coil is taken up to perform a relaxation heat treatment. The speed between the nip roller and the nip roller that performs the winding tension is loosened. The biaxially oriented PEN film after the relaxation heat treatment thus obtained was used as Example 4, and the results of the evaluation of the properties of the film of the obtained Example 4 are shown in Table 2. The film of Example 4 In terms of wafer processability, there is no problem caused by malfunction of the die bonder device due to thermal dimensional change of the film, poor thickness distribution of the film, or planarity of the film, and good results can be achieved. Capture operation. Further, in the process of coating the contaminated adhesive layer and in the processing of the semiconductor wafer, the film is not broken at the time of tape peeling, and the workability in the manufacture of the semiconductor wafer is good. [Example 5] The same procedure as in Example 4 was repeated except for the polymer F in Example 4, to obtain a biaxially oriented PEN film having a thickness of 50 μm. The biaxially oriented directional PEN film thus obtained was designated as Example 5. The results of the evaluation of the properties of the obtained film of the sinus of Example 5 are shown in Table 2 -48 - (46) 1294646. In the wafer processability of the film of Example 5, there was no problem caused by the malfunction of the die bonder device due to the change in the thermal size of the film, the difference in the thickness distribution of the film, or the planarity of the film. And can carry out a good extraction operation. Further, in the process of coating the contaminated adhesive layer and in the processing of the semiconductor wafer, the film is not broken at the time of tape peeling, and the workability in the manufacture of the semiconductor wafer is good. [Example 6] Except that the preparation in Example 4 was carried out at a temperature of 1 4 5 ° C for 3 · 3 times in the longitudinal direction, and then, at 140 ° C, the transverse direction was extended by 3. 3 times. Then, the same operation as in Example 4 was repeated to obtain a biaxially oriented P EN film having a thickness of 30 // m. The biaxially oriented directional p EN film thus obtained was designated as Example 6. The results of the evaluation of the properties of the obtained film of Example 6 are shown in Table 2. In the wafer processability of the film of Example 6, the defect caused by the malfunction of the die bonder device due to the change in the film size, the difference in the thickness distribution of the film, or the planarity of the film did not occur, and Implement a good extraction operation. Further, in the process of coating the contamination-adhesive layer and in the process of semiconductor wafer processing, the film does not break when the tape is peeled off, and the workability in the manufacture of the semiconductor wafer is good. [Example 7] Except that the polymer D was used in Example 4, the same operation as in Example 4 was repeated to obtain a biaxial stretching orientation of a thickness of 50 // m - 49 - (47) 1294646 Ρ ΕΝ film. The thus obtained biaxially oriented oriented ruthenium film was designated as Example 7. The results of the evaluation of the properties of the obtained film of Example 7 are shown in Table 2. In the wafer processability, the defect caused by the malfunction of the die bonder device due to the change in the film size, the difference in the thickness distribution of the film, or the planarity of the film does not occur, and a good pick-up operation can be performed. . On the other hand, there is an in-process contamination caused by low polymer precipitation on the surface of the film. [Example 8] The same procedure as in Example 6 was repeated except that the amount of the inactive particles contained in the film was 0.01% by weight in Example 6, and the heat setting temperature was changed to 23 °C. A biaxially oriented directional PEN film having a thickness of 3 0 // m. The biaxially oriented directional PEN film thus obtained was designated as Example 8. The results of the evaluation of the properties of the obtained film of Example 8 are shown in Table 2. In terms of wafer processability, although the thermal dimensional change of the film is small, since the difference in thermal shrinkage ratio between the longitudinal direction and the lateral direction exceeds the desired range, there are several problems in the stability of the fabrication of the conductor wafer. . [Example 9] Except that in Example 4, it was stretched by 2·7 times in the longitudinal direction at 1 4 5 ° C. Then, it was stretched 2.7 times in the transverse direction at 140 ° C, and the others were repeated and carried out. In the same operation as in Example 4, a biaxial stretching orientation of thickness 30 0 m was obtained - 50 - (48) 1294646 PEN thin beta Wu. The biaxially oriented directional pen film thus obtained was designated as Example 9. The results of the evaluation of the properties of the obtained film of Example 9 are shown in Table 2. In terms of wafer processability, although the thermal dimensional change of the film is small, the refractive index in the film thickness direction is high, and process contamination due to chips or the like of the film or film breakage due to peeling of the film occurs.

-51 - (49) 1294646 Table 2 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Polymer EFEDEE Polymer Characteristic Viscosity dl/g 0.69 0.78 0.69 0.43 0.69 0.69 Adding particle type spherical shape Oxide spheroidal cerium dioxide spherical spheroidal dioxide spheroidal cerium dioxide spherical spheroidal dioxide spheroidal cerium dioxide particle size jim 0.6 0.6 0.6 0.6 0.6 0.6 added weight % 0.1 0.1 0.1 0.1 0.01 0.1 vertical Stretching magnification 3.0 3.0 3.3 3.0 3.3 2.7 Temperature °C 145 145 145 145 145 145 Horizontal stretching ratio 3.0 3.0 3.3 3.0 3.3 2.7 Temperature °c 140 140 140 140 140 140 Heat fixing temperature °c 246 246 246 246 233 246 Plunge loose heat treatment temperature °c 225 225 225 225 225 225 Film intrinsic viscosity dl / g 0.59 0.64 0.59 0.39 0.59 0.59 film thickness / / m 30 50 30 50 30 30 thickness distribution difference % 10 9 7 12 6 17 low polymer Extraction amount Thunder% 0.5 0.3 0.4 1.0 0.4 0.5 Refractive index in the thickness direction (Π2) 1.508 1.510 1.503 1.505 1.499 1.518 Heat shrinkage rate SMD % 0.35 0.37 0.40 0.30 0.85 0.20 STD % 0.03 0.02 0.03 0.01 0.10 0.00 Difference % 0.32 0.35 0.37 0.29 0.75 0.20 Friction coefficient 0.4 0.3 0.3 0.4 0.6 0.4 Density g/cm3 1.360 1.362 1.362 1.357 1.358 — Processability of semiconductor wafer (back grinding and cutting) Good good or bad Processability of semiconductor wafers (back grinding and stripping) Good and bad defects -52 -

Claims (1)

1294646 generations. ϊ ϊ 修 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( a biaxially oriented oriented film prepared by using 6-naphthalenedicarboxylate as a main component, which is characterized in that the heat shrinkage rate of the film when heat treated at 200 ° C for 10 minutes is in the film forming direction of the film and The width direction is 1.00% or less. 2. The substrate film for semiconductor wafer processing as claimed in claim 1 wherein the substrate film for semiconductor wafer processing is used for a back grinding tape or a dicing tape. 3. The substrate film for semiconductor wafer processing according to claim 1, wherein the film has a low polymer content of 0.8% by weight or less, and a refractive index of the film in the thickness direction is 1.50 or more and 1.5. 1 5 or less. 4. The substrate film for semiconductor wafer processing according to any one of claims 1 to 3, wherein a difference in thickness distribution of the film is 15% or less. 5. The substrate film for semiconductor wafer processing according to any one of claims 1 to 3, wherein the Young's flexural modulus of the film is 5400 MPa or more and 6900 MPa or less 〇6. The base film for semiconductor wafer processing according to any one of the items 1 to 3 wherein the center line average surface roughness of at least one surface of the film is 3 nm or more and 80 nm or less. 7. The substrate film for conductor wafer processing according to any one of claims 1 to 3, wherein the density of the film is 1.356 g/cm3 or more and 1.364 g/cm3 or less. 8. If you apply for a patent scope! The substrate film for semiconductor wafer processing according to any one of item 3, wherein the film has an average thickness of 9//m or more and 150/m or less. The substrate film for semiconductor wafer processing according to any one of claims 1 to 3, wherein the film has a dynamic friction coefficient of 0.5 or less. 10. The substrate film for semiconductor wafer processing according to any one of claims 1 to 3, wherein the film is heat-treated at a temperature of 200 ° C for 10 minutes to form a film for film formation. The absolute difference between the heat shrinkage ratio in the direction and the heat shrinkage ratio in the wide direction is 0.60% or less. The substrate film for semiconductor wafer processing according to any one of claims 1 to 3, wherein the film is formed of a plurality of layers of two or more layers. 1 2. A back grinding belt characterized in that an adhesive layer is provided on one surface of a base film for semiconductor wafer processing for a back grinding belt of Patent Application No. 2. The invention relates to a back grinding belt composite, which is characterized in that it has a release film on the adhesive layer of the back grinding belt of claim 12, and a dicing tape, which is characterized by a patent application scope. The base film for semiconductor wafer processing for the dicing tape of the second item has an adhesive layer on one surface. -2- 1294646 15. A dicing tape composite characterized by having a release film on top of the adhesive layer of the dicing tape of claim 14. -3-