TWI284983B - Gate oxide process methods for high performance MOS transistors by reducing remote scattering - Google Patents
Gate oxide process methods for high performance MOS transistors by reducing remote scattering Download PDFInfo
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- TWI284983B TWI284983B TW092113428A TW92113428A TWI284983B TW I284983 B TWI284983 B TW I284983B TW 092113428 A TW092113428 A TW 092113428A TW 92113428 A TW92113428 A TW 92113428A TW I284983 B TWI284983 B TW I284983B
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- dielectric
- gate electrode
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Links
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
- H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/88—Manufacture, treatment, or detection of nanostructure with arrangement, process, or apparatus for testing
- Y10S977/881—Microscopy or spectroscopy, e.g. sem, tem
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/151,269 US6621114B1 (en) | 2002-05-20 | 2002-05-20 | MOS transistors with high-k dielectric gate insulator for reducing remote scattering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200401451A TW200401451A (en) | 2004-01-16 |
| TWI284983B true TWI284983B (en) | 2007-08-01 |
Family
ID=27804574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092113428A TWI284983B (en) | 2002-05-20 | 2003-05-19 | Gate oxide process methods for high performance MOS transistors by reducing remote scattering |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6621114B1 (enExample) |
| EP (1) | EP1508158A2 (enExample) |
| JP (1) | JP4624782B2 (enExample) |
| KR (1) | KR100966360B1 (enExample) |
| CN (1) | CN100380576C (enExample) |
| AU (1) | AU2003230394A1 (enExample) |
| TW (1) | TWI284983B (enExample) |
| WO (1) | WO2003100835A2 (enExample) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6906398B2 (en) * | 2003-01-02 | 2005-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor chip with gate dielectrics for high-performance and low-leakage applications |
| KR100885910B1 (ko) * | 2003-04-30 | 2009-02-26 | 삼성전자주식회사 | 게이트 적층물에 ｏｈａ막을 구비하는 비 휘발성 반도체메모리 장치 및 그 제조방법 |
| US20040232408A1 (en) * | 2003-05-21 | 2004-11-25 | Heeger Alan J. | Bilayer high dielectric constant gate insulator |
| US7045847B2 (en) * | 2003-08-11 | 2006-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with high-k gate dielectric |
| US7256465B2 (en) * | 2004-01-21 | 2007-08-14 | Sharp Laboratories Of America, Inc. | Ultra-shallow metal oxide surface channel MOS transistor |
| US20050202659A1 (en) * | 2004-03-12 | 2005-09-15 | Infineon Technologies North America Corp. | Ion implantation of high-k materials in semiconductor devices |
| US8399934B2 (en) * | 2004-12-20 | 2013-03-19 | Infineon Technologies Ag | Transistor device |
| US8178902B2 (en) | 2004-06-17 | 2012-05-15 | Infineon Technologies Ag | CMOS transistor with dual high-k gate dielectric and method of manufacture thereof |
| KR101061168B1 (ko) | 2004-06-23 | 2011-09-01 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 형성방법 |
| US7320931B2 (en) * | 2004-07-30 | 2008-01-22 | Freescale Semiconductor Inc. | Interfacial layer for use with high k dielectric materials |
| JP2006086151A (ja) * | 2004-09-14 | 2006-03-30 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2006114747A (ja) * | 2004-10-15 | 2006-04-27 | Seiko Epson Corp | 半導体装置の製造方法 |
| US7183596B2 (en) | 2005-06-22 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite gate structure in an integrated circuit |
| US20070001231A1 (en) * | 2005-06-29 | 2007-01-04 | Amberwave Systems Corporation | Material systems for dielectrics and metal electrodes |
| WO2007005312A1 (en) * | 2005-06-29 | 2007-01-11 | Amberwave Systems Corporation | Material systems for dielectrics and metal electrodes and methods for formation thereof |
| US7432139B2 (en) * | 2005-06-29 | 2008-10-07 | Amberwave Systems Corp. | Methods for forming dielectrics and metal electrodes |
| US8053849B2 (en) * | 2005-11-09 | 2011-11-08 | Advanced Micro Devices, Inc. | Replacement metal gate transistors with reduced gate oxide leakage |
| US7436034B2 (en) * | 2005-12-19 | 2008-10-14 | International Business Machines Corporation | Metal oxynitride as a pFET material |
| US7524727B2 (en) * | 2005-12-30 | 2009-04-28 | Intel Corporation | Gate electrode having a capping layer |
| KR100762239B1 (ko) | 2006-05-03 | 2007-10-01 | 주식회사 하이닉스반도체 | 반도체 소자의 ｐｍｏｓ 트랜지스터, 이를 포함하는 반도체소자와 그의 제조 방법 |
| US7582549B2 (en) | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
| US8735243B2 (en) | 2007-08-06 | 2014-05-27 | International Business Machines Corporation | FET device with stabilized threshold modifying material |
| CN100561692C (zh) * | 2007-11-09 | 2009-11-18 | 北京大学 | Mos晶体管体区的掺杂方法 |
| JP2009302373A (ja) * | 2008-06-16 | 2009-12-24 | Nec Electronics Corp | 半導体装置の製造方法 |
| CN101783298B (zh) * | 2009-01-21 | 2012-11-14 | 中国科学院微电子研究所 | 抑制高k栅介质/金属栅结构界面层生长的方法 |
| DE102009010883B4 (de) * | 2009-02-27 | 2011-05-26 | Amd Fab 36 Limited Liability Company & Co. Kg | Einstellen eines nicht-Siliziumanteils in einer Halbleiterlegierung während der FET-Transistorherstellung mittels eines Zwischenoxidationsprozesses |
| US9490179B2 (en) | 2010-05-21 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and semiconductor device |
| US8492852B2 (en) | 2010-06-02 | 2013-07-23 | International Business Machines Corporation | Interface structure for channel mobility improvement in high-k metal gate stack |
| US20120313186A1 (en) * | 2011-06-08 | 2012-12-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polysilicon gate with nitrogen doped high-k dielectric and silicon dioxide |
| CN102820327A (zh) * | 2011-06-09 | 2012-12-12 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
| JP2013162073A (ja) * | 2012-02-08 | 2013-08-19 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
| US8883598B2 (en) * | 2012-03-05 | 2014-11-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thin capped channel layers of semiconductor devices and methods of forming the same |
| CN103632966B (zh) * | 2012-08-21 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管的形成方法 |
| CN103632940B (zh) * | 2012-08-23 | 2016-04-06 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
| US20140070169A1 (en) * | 2012-09-12 | 2014-03-13 | Chongwu Zhou | Separated Carbon Nanotube-Based Active Matrix Organic Light-Emitting Diode Displays |
| CN110610983A (zh) * | 2019-09-06 | 2019-12-24 | 电子科技大学 | 抗辐照器件及制备方法 |
| US11264499B2 (en) * | 2019-09-16 | 2022-03-01 | Globalfoundries U.S. Inc. | Transistor devices with source/drain regions comprising an interface layer that comprises a non-semiconductor material |
| CN110620155A (zh) * | 2019-09-24 | 2019-12-27 | 天津大学 | 异质栅介质层柔性硅薄膜晶体管及其制造方法 |
| US12490510B2 (en) * | 2020-08-12 | 2025-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of forming the same |
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| JPH0555560A (ja) * | 1991-08-23 | 1993-03-05 | Fujitsu Ltd | 半導体装置 |
| JPH05102466A (ja) * | 1991-10-09 | 1993-04-23 | Olympus Optical Co Ltd | Ｍｏｓ型半導体装置及びその製造方法 |
| JP3599290B2 (ja) * | 1994-09-19 | 2004-12-08 | 株式会社ルネサステクノロジ | 半導体装置 |
| US5780891A (en) * | 1994-12-05 | 1998-07-14 | Micron Technology, Inc. | Nonvolatile floating gate memory with improved interploy dielectric |
| JPH09246551A (ja) * | 1996-03-13 | 1997-09-19 | Ricoh Co Ltd | Ｍｏｓ型半導体装置及びその製造方法 |
| JPH10189966A (ja) * | 1996-12-26 | 1998-07-21 | Toshiba Corp | 半導体装置及びその製造方法 |
| CN1125482C (zh) * | 1997-10-15 | 2003-10-22 | 世界先进积体电路股份有限公司 | 具有p+多晶硅栅极的金属氧化物半导体晶体管的制作方法 |
| US6008091A (en) * | 1998-01-27 | 1999-12-28 | Lucent Technologies Inc. | Floating gate avalanche injection MOS transistors with high K dielectric control gates |
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| JP2003224268A (ja) * | 2002-01-31 | 2003-08-08 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
-
2002
- 2002-05-20 US US10/151,269 patent/US6621114B1/en not_active Expired - Lifetime
-
2003
- 2003-05-13 AU AU2003230394A patent/AU2003230394A1/en not_active Abandoned
- 2003-05-13 WO PCT/US2003/015194 patent/WO2003100835A2/en not_active Ceased
- 2003-05-13 KR KR1020047018671A patent/KR100966360B1/ko not_active Expired - Fee Related
- 2003-05-13 CN CNB038114208A patent/CN100380576C/zh not_active Expired - Lifetime
- 2003-05-13 EP EP03724576A patent/EP1508158A2/en not_active Withdrawn
- 2003-05-13 JP JP2004508392A patent/JP4624782B2/ja not_active Expired - Fee Related
- 2003-05-19 TW TW092113428A patent/TWI284983B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003100835A3 (en) | 2004-07-22 |
| KR20040106568A (ko) | 2004-12-17 |
| CN1656596A (zh) | 2005-08-17 |
| WO2003100835A2 (en) | 2003-12-04 |
| US6621114B1 (en) | 2003-09-16 |
| AU2003230394A8 (en) | 2003-12-12 |
| JP4624782B2 (ja) | 2011-02-02 |
| CN100380576C (zh) | 2008-04-09 |
| JP2005531136A (ja) | 2005-10-13 |
| EP1508158A2 (en) | 2005-02-23 |
| KR100966360B1 (ko) | 2010-06-28 |
| TW200401451A (en) | 2004-01-16 |
| AU2003230394A1 (en) | 2003-12-12 |
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