JP4624782B2 - Ｍｏｓトランジスタ及びその形成方法 - Google Patents

Ｍｏｓトランジスタ及びその形成方法 Download PDF

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Publication number
JP4624782B2
JP4624782B2 JP2004508392A JP2004508392A JP4624782B2 JP 4624782 B2 JP4624782 B2 JP 4624782B2 JP 2004508392 A JP2004508392 A JP 2004508392A JP 2004508392 A JP2004508392 A JP 2004508392A JP 4624782 B2 JP4624782 B2 JP 4624782B2
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dielectric constant
layer
high dielectric
gate
gate electrode
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JP2004508392A
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Japanese (ja)
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JP2005531136A5 (enExample
JP2005531136A (ja
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キム ヒョン−シーグ
チョン ジューング
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/88—Manufacture, treatment, or detection of nanostructure with arrangement, process, or apparatus for testing
    • Y10S977/881—Microscopy or spectroscopy, e.g. sem, tem

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2004508392A 2002-05-20 2003-05-13 Ｍｏｓトランジスタ及びその形成方法 Expired - Fee Related JP4624782B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/151,269 US6621114B1 (en) 2002-05-20 2002-05-20 MOS transistors with high-k dielectric gate insulator for reducing remote scattering
PCT/US2003/015194 WO2003100835A2 (en) 2002-05-20 2003-05-13 Gate oxide process methods for high performance mos transistors by reducing remote scattering

Publications (3)

Publication Number Publication Date
JP2005531136A JP2005531136A (ja) 2005-10-13
JP2005531136A5 JP2005531136A5 (enExample) 2006-06-29
JP4624782B2 true JP4624782B2 (ja) 2011-02-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004508392A Expired - Fee Related JP4624782B2 (ja) 2002-05-20 2003-05-13 Ｍｏｓトランジスタ及びその形成方法

Country Status (8)

Country Link
US (1) US6621114B1 (enExample)
EP (1) EP1508158A2 (enExample)
JP (1) JP4624782B2 (enExample)
KR (1) KR100966360B1 (enExample)
CN (1) CN100380576C (enExample)
AU (1) AU2003230394A1 (enExample)
TW (1) TWI284983B (enExample)
WO (1) WO2003100835A2 (enExample)

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US6906398B2 (en) * 2003-01-02 2005-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor chip with gate dielectrics for high-performance and low-leakage applications
KR100885910B1 (ko) * 2003-04-30 2009-02-26 삼성전자주식회사 게이트 적층물에 ｏｈａ막을 구비하는 비 휘발성 반도체메모리 장치 및 그 제조방법
US20040232408A1 (en) * 2003-05-21 2004-11-25 Heeger Alan J. Bilayer high dielectric constant gate insulator
US7045847B2 (en) * 2003-08-11 2006-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with high-k gate dielectric
US7256465B2 (en) * 2004-01-21 2007-08-14 Sharp Laboratories Of America, Inc. Ultra-shallow metal oxide surface channel MOS transistor
US20050202659A1 (en) * 2004-03-12 2005-09-15 Infineon Technologies North America Corp. Ion implantation of high-k materials in semiconductor devices
US8399934B2 (en) * 2004-12-20 2013-03-19 Infineon Technologies Ag Transistor device
US8178902B2 (en) * 2004-06-17 2012-05-15 Infineon Technologies Ag CMOS transistor with dual high-k gate dielectric and method of manufacture thereof
KR101061168B1 (ko) 2004-06-23 2011-09-01 주식회사 하이닉스반도체 반도체 소자의 게이트 형성방법
US7320931B2 (en) * 2004-07-30 2008-01-22 Freescale Semiconductor Inc. Interfacial layer for use with high k dielectric materials
JP2006086151A (ja) * 2004-09-14 2006-03-30 Fujitsu Ltd 半導体装置の製造方法
JP2006114747A (ja) * 2004-10-15 2006-04-27 Seiko Epson Corp 半導体装置の製造方法
US7183596B2 (en) 2005-06-22 2007-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Composite gate structure in an integrated circuit
WO2007005312A1 (en) * 2005-06-29 2007-01-11 Amberwave Systems Corporation Material systems for dielectrics and metal electrodes and methods for formation thereof
US7432139B2 (en) * 2005-06-29 2008-10-07 Amberwave Systems Corp. Methods for forming dielectrics and metal electrodes
US20070001231A1 (en) * 2005-06-29 2007-01-04 Amberwave Systems Corporation Material systems for dielectrics and metal electrodes
US8053849B2 (en) * 2005-11-09 2011-11-08 Advanced Micro Devices, Inc. Replacement metal gate transistors with reduced gate oxide leakage
US7436034B2 (en) * 2005-12-19 2008-10-14 International Business Machines Corporation Metal oxynitride as a pFET material
US7524727B2 (en) 2005-12-30 2009-04-28 Intel Corporation Gate electrode having a capping layer
KR100762239B1 (ko) 2006-05-03 2007-10-01 주식회사 하이닉스반도체 반도체 소자의 ｐｍｏｓ 트랜지스터, 이를 포함하는 반도체소자와 그의 제조 방법
US7582549B2 (en) 2006-08-25 2009-09-01 Micron Technology, Inc. Atomic layer deposited barium strontium titanium oxide films
US8735243B2 (en) 2007-08-06 2014-05-27 International Business Machines Corporation FET device with stabilized threshold modifying material
CN100561692C (zh) * 2007-11-09 2009-11-18 北京大学 Mos晶体管体区的掺杂方法
JP2009302373A (ja) * 2008-06-16 2009-12-24 Nec Electronics Corp 半導体装置の製造方法
CN101783298B (zh) * 2009-01-21 2012-11-14 中国科学院微电子研究所 抑制高k栅介质/金属栅结构界面层生长的方法
DE102009010883B4 (de) * 2009-02-27 2011-05-26 Amd Fab 36 Limited Liability Company & Co. Kg Einstellen eines nicht-Siliziumanteils in einer Halbleiterlegierung während der FET-Transistorherstellung mittels eines Zwischenoxidationsprozesses
US9490179B2 (en) * 2010-05-21 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device
US8492852B2 (en) 2010-06-02 2013-07-23 International Business Machines Corporation Interface structure for channel mobility improvement in high-k metal gate stack
US20120313186A1 (en) * 2011-06-08 2012-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Polysilicon gate with nitrogen doped high-k dielectric and silicon dioxide
CN102820327A (zh) * 2011-06-09 2012-12-12 中国科学院微电子研究所 一种半导体结构及其制造方法
JP2013162073A (ja) * 2012-02-08 2013-08-19 Toyota Central R&D Labs Inc 半導体装置とその製造方法
US8883598B2 (en) * 2012-03-05 2014-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Thin capped channel layers of semiconductor devices and methods of forming the same
CN103632966B (zh) * 2012-08-21 2016-01-06 中芯国际集成电路制造(上海)有限公司 Mos晶体管的形成方法
CN103632940B (zh) * 2012-08-23 2016-04-06 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US20140070169A1 (en) * 2012-09-12 2014-03-13 Chongwu Zhou Separated Carbon Nanotube-Based Active Matrix Organic Light-Emitting Diode Displays
CN110610983A (zh) * 2019-09-06 2019-12-24 电子科技大学 抗辐照器件及制备方法
US11264499B2 (en) * 2019-09-16 2022-03-01 Globalfoundries U.S. Inc. Transistor devices with source/drain regions comprising an interface layer that comprises a non-semiconductor material
CN110620155A (zh) * 2019-09-24 2019-12-27 天津大学 异质栅介质层柔性硅薄膜晶体管及其制造方法
US12490510B2 (en) * 2020-08-12 2025-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same

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Also Published As

Publication number Publication date
KR100966360B1 (ko) 2010-06-28
CN1656596A (zh) 2005-08-17
TW200401451A (en) 2004-01-16
AU2003230394A1 (en) 2003-12-12
TWI284983B (en) 2007-08-01
EP1508158A2 (en) 2005-02-23
AU2003230394A8 (en) 2003-12-12
WO2003100835A2 (en) 2003-12-04
CN100380576C (zh) 2008-04-09
JP2005531136A (ja) 2005-10-13
US6621114B1 (en) 2003-09-16
WO2003100835A3 (en) 2004-07-22
KR20040106568A (ko) 2004-12-17

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