TWI278901B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TWI278901B
TWI278901B TW094115814A TW94115814A TWI278901B TW I278901 B TWI278901 B TW I278901B TW 094115814 A TW094115814 A TW 094115814A TW 94115814 A TW94115814 A TW 94115814A TW I278901 B TWI278901 B TW I278901B
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TW
Taiwan
Prior art keywords
hole
film
semiconductor device
ball
conductive film
Prior art date
Application number
TW094115814A
Other languages
English (en)
Other versions
TW200540946A (en
Inventor
Hiroyasu Minda
Original Assignee
Nec Electronics Corp
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Publication date
Application filed by Nec Electronics Corp filed Critical Nec Electronics Corp
Publication of TW200540946A publication Critical patent/TW200540946A/zh
Application granted granted Critical
Publication of TWI278901B publication Critical patent/TWI278901B/zh

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

1278901 九、發明說明： 者’尥請案第2_麗6號而提出申請 【發明所屬之技術領域】 發明領域 【先前技術】 之無嶋撕愉境輸實纖覆晶安裝 此安/至„錫，吾人指出包含如，々及Cu者；反之，在草 為纖避免由:二成5i 在如上述之此-方式中，>其面。 制在銅焊墊與焊錫球間之介面所發生之介面破裂*叫抑 然而，即使已存在日本公開專利申請案編號細柳 錫球間形成例如，^^膜。然而，在b宰=阻 獲得焊墊部份之長期可靠度。一系無法充分 份所要之產叫軸料；且焊塾部 ^此，下，吾 5 1278901 【發明内容】 凸塊芬可;㈣ 而b為孔润之深度時，滿值不大於2。 ㈣門之距離 ，外，根據本發明之半導體裝置包含：一 — 二^之設置於該互連線上方之保護層及設置於呈有層k 緩:=來構成’其並設置有觸= «外側；以及-焊^球，觸亚延伸至絕緣層上之孔 其中該導電膜包含一愈^電，及緩衝樹脂層相接觸， 於該互連_ “下層膜設置 =之=與=上方周圍間之二 朗=====嶋射彻 【實施方式】 將瞭7綱°編項技藝者 發明並不限於供縣之實補，且本 1278901 【圖式簡單說明】 •本發明之上述及其他目的、優勢及姓* 說明而變得更顯而易見，其中： ％徵將由結合附圖之下列 圖1顯示根據一實施例之半導體努 圖2為顯示根據該實施例之半導要部份； 戴面圖； 體衣置之一製程範例的製程 圖3為顯示根據該實施例之半導 戴面圖； 等體I置之該製程範例的製程 圖4為顯示根據該實施例之半導 戴面圖； 等體衣置之該製程範例的製程 戴面^為顯示根據該實施例之轉體裝置之該製程範例的製程 戴面^為顯示祕該實關之半導體裝置之該製程範例的製程 戴面=為顯示根據該實關之半導體裝置之該製減例的製程 ，谷為顯示根據該實施例之半導體裝詈处 程 顯示根據該實施例之半導體裝置之該製程範例的製裎 戴面為顯示根據該實施例之半導體裝置之·程範例的製程 截面為顯示根據該實施例之半導體裝置之該製程範例的製程 哉兩^為_根_實施例之半導雜叙該製程範例的製 程 戴^ I4為顯示根據該實施例之半導體裝置之該製程範例的製 16 1278901 圖15為顯示根據該實施例之半導體裳置之 截面圖； 程範例的製程 圖16為顯示根據該實施例之半導體裝置之該製 截面圖； 、王乾例的製程 圖顯示用於一範例中之UBM形狀及焊錫印刷遮罩 圖; 圖18為說明關於形成合金層之圖示； 圖19為表示熱循環測試之結果圖示； 圖20為表示熱循環測試之結果圖示； 圖21為顯示根據該實施例之半導體裝置之結構的截面圖。 【元件符號說明】 100絕緣膜 101最上層互連線 102罩蓋層 、 103鈍化膜 104焊墊通孔 105絕緣樹脂層 106阻障金屬嗅 107 UBM 膜 107a UBM膜之端面 108焊錫球 109光阻 110合金層 111 Cu 膜 112 Ti 膜 113 TiW 膜 114 Cu 膜 115 Ni膜 116焊錫印刷遮罩之關口 17

Claims (1)

1278901 十、申請專利範圍： 1· 一種半導體裝置，包含: 一互連線； 並設有一觸抵該互連線之 一絕緣膜，設置於該互連線上方， 孔洞； 一導電膜’連接至該孔洞底部之該互連線 部至該孔洞外侧而形成；以及 兀也、跨舰洞底 二巧球，設置成無導賴及舰賴相接觸， 八中虽”a”為在該焊錫球與該絕緣膜接觸
2· —種半導體裝置，包含： 一互連線； 孔洞Γ絕緣膜’設置於該互連線上方，並設有—觸抵該互連線之 -導電膜’連接至該孔洞底部之該互連線 部至該孔洞外侧而形成；以及 m玄孔而底 一焊錫球，設置成與該導電膜及該絕緣膜相接觸， 其中該導賴包含-球下層金聽及-轉金職， 層金屬膜與該焊錫軸賴，_轉金屬麟設置於該^車 與《•亥球下層金屬膜之間’當e為該球下層金屬膜之末端部份盘: 孔洞之上方周圍間之距離、而，’b”為該孔洞之深度時，c =二 於1.3。 +大 3·如申請專利範圍第1項之半導體裝置，更包含一位於誃 錫球與該導電膜間之合金層，該合金層含有包含於該焊錫球 第一金屬元素及包含於該導電膜中之第二金屬元素。 4·如申請專利範圍第2項之半導體裝置，更包含一位於該太曰 錫膜與該導電膜間之合金層，該合金層含有包含於該焊錫球 金屬元第一金屬元素以及包含於該導電膜中之第二金屬元素。 18 1278901 球係為覆蓋該導電膜。
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