TWI277116B - Emitter and method of making - Google Patents
Emitter and method of making Download PDFInfo
- Publication number
- TWI277116B TWI277116B TW091134879A TW91134879A TWI277116B TW I277116 B TWI277116 B TW I277116B TW 091134879 A TW091134879 A TW 091134879A TW 91134879 A TW91134879 A TW 91134879A TW I277116 B TWI277116 B TW I277116B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- emitter
- cathode
- protective layer
- disposed
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010410 layer Substances 0.000 claims abstract description 206
- 239000011241 protective layer Substances 0.000 claims abstract description 49
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 81
- 125000006850 spacer group Chemical group 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 33
- 238000003860 storage Methods 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- -1 sulfate peroxide Chemical class 0.000 claims description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims 1
- 230000005641 tunneling Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 13
- 239000010931 gold Substances 0.000 description 12
- 239000010955 niobium Substances 0.000 description 12
- 229910052758 niobium Inorganic materials 0.000 description 12
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 11
- 230000005684 electric field Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000012782 phase change material Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 229910052720 vanadium Inorganic materials 0.000 description 5
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 235000011149 sulphuric acid Nutrition 0.000 description 2
- 239000001117 sulphuric acid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000763 AgInSbTe Inorganic materials 0.000 description 1
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 229910005898 GeSn Inorganic materials 0.000 description 1
- 206010033799 Paralysis Diseases 0.000 description 1
- 206010035148 Plague Diseases 0.000 description 1
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 1
- 229910018321 SbTe Inorganic materials 0.000 description 1
- 229910006905 SnSb2Te4 Inorganic materials 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 208000037516 chromosome inversion disease Diseases 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 229910001325 element alloy Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 150000002258 gallium Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 description 1
- 230000003699 hair surface Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007659 motor function Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/23—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes or William tubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Cold Cathode And The Manufacture (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/066,149 US6703252B2 (en) | 2002-01-31 | 2002-01-31 | Method of manufacturing an emitter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200302499A TW200302499A (en) | 2003-08-01 |
| TWI277116B true TWI277116B (en) | 2007-03-21 |
Family
ID=27610439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091134879A TWI277116B (en) | 2002-01-31 | 2002-11-29 | Emitter and method of making |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US6703252B2 (enExample) |
| EP (1) | EP1470566A2 (enExample) |
| JP (1) | JP2005516368A (enExample) |
| AU (1) | AU2003208921A1 (enExample) |
| NO (1) | NO20043538L (enExample) |
| TW (1) | TWI277116B (enExample) |
| WO (1) | WO2003065425A2 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6911768B2 (en) * | 2001-04-30 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Tunneling emitter with nanohole openings |
| US7049034B2 (en) * | 2003-09-09 | 2006-05-23 | Photronics, Inc. | Photomask having an internal substantially transparent etch stop layer |
| KR100513727B1 (ko) * | 2003-02-12 | 2005-09-08 | 삼성에스디아이 주식회사 | 전계방출소자의 제조방법 |
| US7521851B2 (en) * | 2003-03-24 | 2009-04-21 | Zhidan L Tolt | Electron emitting composite based on regulated nano-structures and a cold electron source using the composite |
| EP1475113A1 (en) * | 2003-05-08 | 2004-11-10 | Novo Nordisk A/S | External needle inserter |
| EP1624914B1 (en) * | 2003-05-08 | 2008-04-16 | Novo Nordisk A/S | Internal needle inserter |
| JP4509100B2 (ja) * | 2003-05-08 | 2010-07-21 | ノボ・ノルデイスク・エー／エス | 取り外し可能な針挿入作動部を有する皮膚に取り付け可能な注入装置 |
| US6987688B2 (en) * | 2003-06-11 | 2006-01-17 | Ovonyx, Inc. | Die customization using programmable resistance memory elements |
| JP4545397B2 (ja) * | 2003-06-19 | 2010-09-15 | 株式会社 日立ディスプレイズ | 画像表示装置 |
| EP1502613A1 (en) * | 2003-08-01 | 2005-02-02 | Novo Nordisk A/S | Needle device with retraction means |
| US20050051764A1 (en) * | 2003-09-04 | 2005-03-10 | Huei-Pei Kuo | Anodizing process for improving electron emission in electronic devices |
| KR20060099520A (ko) * | 2003-10-21 | 2006-09-19 | 노보 노르디스크 에이/에스 | 의료용 피부 장착 장치 |
| US7459839B2 (en) * | 2003-12-05 | 2008-12-02 | Zhidan Li Tolt | Low voltage electron source with self aligned gate apertures, and luminous display using the electron source |
| EP1732626A1 (en) * | 2004-03-30 | 2006-12-20 | Novo Nordisk A/S | Actuator system comprising lever mechanism |
| US20060051681A1 (en) * | 2004-09-08 | 2006-03-09 | Phototronics, Inc. 15 Secor Road P.O. Box 5226 Brookfield, Conecticut | Method of repairing a photomask having an internal etch stop layer |
| JP2006080046A (ja) * | 2004-09-13 | 2006-03-23 | Ngk Insulators Ltd | 電子放出装置 |
| WO2006032692A1 (en) * | 2004-09-22 | 2006-03-30 | Novo Nordisk A/S | Medical device with cannula inserter |
| EP1804856A1 (en) * | 2004-09-22 | 2007-07-11 | Novo Nordisk A/S | Medical device with transcutaneous cannula device |
| EP1824536B1 (en) * | 2004-12-06 | 2009-08-26 | Novo Nordisk A/S | Ventilated skin mountable device |
| EP1848476A1 (en) * | 2005-01-24 | 2007-10-31 | Novo Nordisk A/S | Transcutaneous device assembly |
| EP1898975A2 (en) * | 2005-05-13 | 2008-03-19 | Novo Nordisk A/S | Medical device adapted to detect disengagement of a transcutaneous device |
| US7786662B2 (en) | 2005-05-19 | 2010-08-31 | Texas Instruments Incorporated | Display using a movable electron field emitter and method of manufacture thereof |
| US20070096621A1 (en) * | 2005-10-31 | 2007-05-03 | Sang-Ho Jeon | Electron emission display |
| US9173992B2 (en) * | 2006-03-13 | 2015-11-03 | Novo Nordisk A/S | Secure pairing of electronic devices using dual means of communication |
| WO2007104756A1 (en) * | 2006-03-13 | 2007-09-20 | Novo Nordisk A/S | Medical system comprising dual purpose communication means |
| US20090163874A1 (en) * | 2006-04-26 | 2009-06-25 | Novo Nordisk A/S | Skin-Mountable Device in Packaging Comprising Coated Seal Member |
| US9399094B2 (en) * | 2006-06-06 | 2016-07-26 | Novo Nordisk A/S | Assembly comprising skin-mountable device and packaging therefore |
| CN101192490B (zh) | 2006-11-24 | 2010-09-29 | 清华大学 | 表面传导电子发射元件以及应用表面传导电子发射元件的电子源 |
| CN101192494B (zh) | 2006-11-24 | 2010-09-29 | 清华大学 | 电子发射元件的制备方法 |
| US20100063448A1 (en) * | 2007-03-06 | 2010-03-11 | Novo Nordisk A/S | Pump assembly comprising actuator system |
| EP2209500B1 (en) * | 2007-10-31 | 2015-07-22 | Novo Nordisk A/S | Non-porous material as sterilization barrier |
| US8000129B2 (en) * | 2007-12-19 | 2011-08-16 | Contour Semiconductor, Inc. | Field-emitter-based memory array with phase-change storage devices |
| KR101615634B1 (ko) * | 2010-02-09 | 2016-04-26 | 삼성전자주식회사 | 테라헤르츠 발진기 및 전자방출원의 제조방법 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5142A (en) * | 1847-06-05 | Rotary steam-engine | ||
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-
2002
- 2002-01-31 US US10/066,149 patent/US6703252B2/en not_active Expired - Lifetime
- 2002-11-29 TW TW091134879A patent/TWI277116B/zh not_active IP Right Cessation
-
2003
- 2003-01-30 WO PCT/US2003/002955 patent/WO2003065425A2/en not_active Ceased
- 2003-01-30 EP EP03707644A patent/EP1470566A2/en not_active Withdrawn
- 2003-01-30 JP JP2003564919A patent/JP2005516368A/ja not_active Withdrawn
- 2003-01-30 AU AU2003208921A patent/AU2003208921A1/en not_active Abandoned
- 2003-10-15 US US10/688,731 patent/US7049158B2/en not_active Expired - Lifetime
- 2003-10-15 US US10/686,965 patent/US6933517B2/en not_active Expired - Lifetime
-
2004
- 2004-08-25 NO NO20043538A patent/NO20043538L/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| US20040130251A1 (en) | 2004-07-08 |
| US6933517B2 (en) | 2005-08-23 |
| US7049158B2 (en) | 2006-05-23 |
| TW200302499A (en) | 2003-08-01 |
| EP1470566A2 (en) | 2004-10-27 |
| AU2003208921A1 (en) | 2003-09-02 |
| WO2003065425A3 (en) | 2004-04-01 |
| US20030143788A1 (en) | 2003-07-31 |
| WO2003065425A2 (en) | 2003-08-07 |
| US6703252B2 (en) | 2004-03-09 |
| US20040087240A1 (en) | 2004-05-06 |
| NO20043538L (no) | 2004-08-25 |
| JP2005516368A (ja) | 2005-06-02 |
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| Date | Code | Title | Description |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |