JP2005516368A - 放出器およびその製造方法 - Google Patents

放出器およびその製造方法 Download PDF

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Publication number
JP2005516368A
JP2005516368A JP2003564919A JP2003564919A JP2005516368A JP 2005516368 A JP2005516368 A JP 2005516368A JP 2003564919 A JP2003564919 A JP 2003564919A JP 2003564919 A JP2003564919 A JP 2003564919A JP 2005516368 A JP2005516368 A JP 2005516368A
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JP
Japan
Prior art keywords
layer
emitter
protective layer
cathode
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003564919A
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English (en)
Japanese (ja)
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JP2005516368A5 (enExample
Inventor
チェン,ジージャン
ベニング,ポール・ジェイ
ラーマムールティ,スリラム
ノヴェット,トーマス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Publication of JP2005516368A publication Critical patent/JP2005516368A/ja
Publication of JP2005516368A5 publication Critical patent/JP2005516368A5/ja
Withdrawn legal-status Critical Current

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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/23Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes or William tubes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/312Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Bipolar Transistors (AREA)
JP2003564919A 2002-01-31 2003-01-30 放出器およびその製造方法 Withdrawn JP2005516368A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/066,149 US6703252B2 (en) 2002-01-31 2002-01-31 Method of manufacturing an emitter
PCT/US2003/002955 WO2003065425A2 (en) 2002-01-31 2003-01-30 Emitter and method of making

Publications (2)

Publication Number Publication Date
JP2005516368A true JP2005516368A (ja) 2005-06-02
JP2005516368A5 JP2005516368A5 (enExample) 2006-03-16

Family

ID=27610439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003564919A Withdrawn JP2005516368A (ja) 2002-01-31 2003-01-30 放出器およびその製造方法

Country Status (7)

Country Link
US (3) US6703252B2 (enExample)
EP (1) EP1470566A2 (enExample)
JP (1) JP2005516368A (enExample)
AU (1) AU2003208921A1 (enExample)
NO (1) NO20043538L (enExample)
TW (1) TWI277116B (enExample)
WO (1) WO2003065425A2 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US7049034B2 (en) * 2003-09-09 2006-05-23 Photronics, Inc. Photomask having an internal substantially transparent etch stop layer
KR100513727B1 (ko) * 2003-02-12 2005-09-08 삼성에스디아이 주식회사 전계방출소자의 제조방법
US7521851B2 (en) * 2003-03-24 2009-04-21 Zhidan L Tolt Electron emitting composite based on regulated nano-structures and a cold electron source using the composite
EP1624914B1 (en) * 2003-05-08 2008-04-16 Novo Nordisk A/S Internal needle inserter
ATE474611T1 (de) * 2003-05-08 2010-08-15 Novo Nordisk As Eine auf die haut aufbringbare injektionsvorrichtung mit abtrennbarem betätigungsteil zum einführen der nadel
EP1475113A1 (en) * 2003-05-08 2004-11-10 Novo Nordisk A/S External needle inserter
US6987688B2 (en) * 2003-06-11 2006-01-17 Ovonyx, Inc. Die customization using programmable resistance memory elements
JP4545397B2 (ja) * 2003-06-19 2010-09-15 株式会社 日立ディスプレイズ 画像表示装置
EP1502613A1 (en) * 2003-08-01 2005-02-02 Novo Nordisk A/S Needle device with retraction means
US20050051764A1 (en) * 2003-09-04 2005-03-10 Huei-Pei Kuo Anodizing process for improving electron emission in electronic devices
KR20060099520A (ko) * 2003-10-21 2006-09-19 노보 노르디스크 에이/에스 의료용 피부 장착 장치
US7459839B2 (en) * 2003-12-05 2008-12-02 Zhidan Li Tolt Low voltage electron source with self aligned gate apertures, and luminous display using the electron source
WO2005094920A1 (en) * 2004-03-30 2005-10-13 Novo Nordisk A/S Actuator system comprising lever mechanism
US20060051681A1 (en) * 2004-09-08 2006-03-09 Phototronics, Inc. 15 Secor Road P.O. Box 5226 Brookfield, Conecticut Method of repairing a photomask having an internal etch stop layer
JP2006080046A (ja) * 2004-09-13 2006-03-23 Ngk Insulators Ltd 電子放出装置
US20080215006A1 (en) * 2004-09-22 2008-09-04 Novo Nordisk A/S Medical Device with Transcutaneous Cannula Device
EP1804859A1 (en) * 2004-09-22 2007-07-11 Novo Nordisk A/S Medical device with cannula inserter
WO2006061354A1 (en) * 2004-12-06 2006-06-15 Novo Nordisk A/S Ventilated skin mountable device
EP1848476A1 (en) 2005-01-24 2007-10-31 Novo Nordisk A/S Transcutaneous device assembly
US20080167641A1 (en) * 2005-05-13 2008-07-10 Novo Nordisk A/S Medical Device Adapted To Detect Disengagement Of A Transcutaneous Device
US7786662B2 (en) * 2005-05-19 2010-08-31 Texas Instruments Incorporated Display using a movable electron field emitter and method of manufacture thereof
US20070096621A1 (en) * 2005-10-31 2007-05-03 Sang-Ho Jeon Electron emission display
JP2009530880A (ja) * 2006-03-13 2009-08-27 ノボ・ノルデイスク・エー/エス 複合通信手段を使用した電子装置の安全なペアリング
CN101401314B (zh) * 2006-03-13 2013-04-24 诺沃-诺迪斯克有限公司 包括第一和第二单元的具有双重用途通信装置的医疗系统
CN101426542A (zh) * 2006-04-26 2009-05-06 诺沃-诺迪斯克有限公司 含经涂覆的密封构件的包装件中的可安装在表皮上的装置
EP2032188A1 (en) * 2006-06-06 2009-03-11 Novo Nordisk A/S Assembly comprising skin-mountable device and packaging therefore
CN101192494B (zh) 2006-11-24 2010-09-29 清华大学 电子发射元件的制备方法
CN101192490B (zh) 2006-11-24 2010-09-29 清华大学 表面传导电子发射元件以及应用表面传导电子发射元件的电子源
CN101641123A (zh) * 2007-03-06 2010-02-03 诺沃-诺迪斯克有限公司 包括操作机构系统的泵组件
WO2009056616A1 (en) * 2007-10-31 2009-05-07 Novo Nordisk A/S Non-porous material as sterilization barrier
WO2009086084A1 (en) * 2007-12-19 2009-07-09 Contour Semiconductor, Inc. Field-emitter-based memory array with phase-change storage devices
KR101615634B1 (ko) * 2010-02-09 2016-04-26 삼성전자주식회사 테라헤르츠 발진기 및 전자방출원의 제조방법

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5142A (en) * 1847-06-05 Rotary steam-engine
DE3750936T2 (de) 1986-07-04 1995-05-18 Canon Kk Elektronen-Emitter-Vorrichtung und ihr Herstellungsverfahren.
US4760567A (en) * 1986-08-11 1988-07-26 Electron Beam Memories Electron beam memory system with ultra-compact, high current density electron gun
US4923421A (en) 1988-07-06 1990-05-08 Innovative Display Development Partners Method for providing polyimide spacers in a field emission panel display
JPH02306520A (ja) * 1989-05-19 1990-12-19 Matsushita Electric Ind Co Ltd 電子放出素子
US5142184B1 (en) 1990-02-09 1995-11-21 Motorola Inc Cold cathode field emission device with integral emitter ballasting
US5086017A (en) * 1991-03-21 1992-02-04 Industrial Technology Research Institute Self aligned silicide process for gate/runner without extra masking
DE69223707T2 (de) 1991-09-13 1998-05-20 Canon Kk Halbleiter-Elektronenemittierende Einrichtung
US5374844A (en) 1993-03-25 1994-12-20 Micrel, Inc. Bipolar transistor structure using ballast resistor
US5528103A (en) 1994-01-31 1996-06-18 Silicon Video Corporation Field emitter with focusing ridges situated to sides of gate
US5473218A (en) * 1994-05-31 1995-12-05 Motorola, Inc. Diamond cold cathode using patterned metal for electron emission control
US5541466A (en) 1994-11-18 1996-07-30 Texas Instruments Incorporated Cluster arrangement of field emission microtips on ballast layer
US5557596A (en) 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
US5578900A (en) * 1995-11-01 1996-11-26 Industrial Technology Research Institute Built in ion pump for field emission display
JPH10308166A (ja) 1997-03-04 1998-11-17 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
US6033924A (en) 1997-07-25 2000-03-07 Motorola, Inc. Method for fabricating a field emission device
TW391022B (en) * 1997-10-29 2000-05-21 Mitsubishi Rayon Co Field emission electron source, method of producing the same, and use of the same
US6010918A (en) * 1998-02-10 2000-01-04 Fed Corporation Gate electrode structure for field emission devices and method of making
US6303504B1 (en) * 1998-02-26 2001-10-16 Vlsi Technology, Inc. Method of improving process robustness of nickel salicide in semiconductors
US6011356A (en) 1998-04-30 2000-01-04 St. Clair Intellectual Property Consultants, Inc. Flat surface emitter for use in field emission display devices
JP2000182511A (ja) 1998-12-14 2000-06-30 Yamaha Corp 電界放射型素子の製造方法
JP2000331595A (ja) * 1999-05-18 2000-11-30 Nikon Corp 薄膜冷陰極及びその製造方法
US6360821B1 (en) * 1999-05-20 2002-03-26 Tiw Corporation Combination whipstock and anchor assembly
BR0001211C1 (pt) 2000-04-13 2002-03-05 Inst Nac De Tecnologia Da Info Estrutura de placa emissora para fed
EP1332653A1 (en) * 2000-10-26 2003-08-06 Oak-Mitsui, Inc. Use of metallic treatment on copper foil to produce fine lines and replace oxide process in printed circuit board production
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6835947B2 (en) * 2002-01-31 2004-12-28 Hewlett-Packard Development Company, L.P. Emitter and method of making

Also Published As

Publication number Publication date
US7049158B2 (en) 2006-05-23
US20030143788A1 (en) 2003-07-31
US20040130251A1 (en) 2004-07-08
WO2003065425A2 (en) 2003-08-07
US6933517B2 (en) 2005-08-23
AU2003208921A1 (en) 2003-09-02
NO20043538L (no) 2004-08-25
EP1470566A2 (en) 2004-10-27
US20040087240A1 (en) 2004-05-06
US6703252B2 (en) 2004-03-09
WO2003065425A3 (en) 2004-04-01
TW200302499A (en) 2003-08-01
TWI277116B (en) 2007-03-21

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