TWI273346B - Positive resist composition - Google Patents

Positive resist composition Download PDF

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Publication number
TWI273346B
TWI273346B TW091121294A TW91121294A TWI273346B TW I273346 B TWI273346 B TW I273346B TW 091121294 A TW091121294 A TW 091121294A TW 91121294 A TW91121294 A TW 91121294A TW I273346 B TWI273346 B TW I273346B
Authority
TW
Taiwan
Prior art keywords
group
resin
examples
acid
substituted
Prior art date
Application number
TW091121294A
Other languages
English (en)
Chinese (zh)
Inventor
Toru Fujimori
Yasumasa Kawabe
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of TWI273346B publication Critical patent/TWI273346B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H10P76/00—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW091121294A 2001-09-19 2002-09-18 Positive resist composition TWI273346B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001285180 2001-09-19
JP2002000563A JP4025074B2 (ja) 2001-09-19 2002-01-07 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
TWI273346B true TWI273346B (en) 2007-02-11

Family

ID=26622506

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091121294A TWI273346B (en) 2001-09-19 2002-09-18 Positive resist composition

Country Status (6)

Country Link
US (1) US7255971B2 (enExample)
EP (1) EP1296190B1 (enExample)
JP (1) JP4025074B2 (enExample)
KR (1) KR100931617B1 (enExample)
DE (1) DE60236243D1 (enExample)
TW (1) TWI273346B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI476515B (zh) * 2009-03-26 2015-03-11 富士軟片股份有限公司 感光化射線或感放射線樹脂組成物、使用它之光阻膜及圖案形成方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3827290B2 (ja) 2001-10-03 2006-09-27 富士写真フイルム株式会社 ポジ型感光性組成物
JP4025075B2 (ja) * 2002-01-10 2007-12-19 富士フイルム株式会社 ポジ型感光性組成物
US7214465B2 (en) * 2002-01-10 2007-05-08 Fujifilm Corporation Positive photosensitive composition
TWI307819B (en) * 2002-05-28 2009-03-21 Arch Spec Chem Inc Acetal protected polymers and photoresist compositions thereof
TWI284779B (en) * 2002-06-07 2007-08-01 Fujifilm Corp Photosensitive resin composition
KR101119783B1 (ko) * 2002-12-28 2012-03-23 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
JP4115322B2 (ja) * 2003-03-31 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
JP4530751B2 (ja) * 2003-07-24 2010-08-25 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
US7867697B2 (en) 2003-07-24 2011-01-11 Fujifilm Corporation Positive photosensitive composition and method of forming resist pattern
JP4092571B2 (ja) * 2003-08-05 2008-05-28 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
JP4033826B2 (ja) * 2003-10-14 2008-01-16 ダイセル化学工業株式会社 フォトレジスト用樹脂及びフォトレジスト用樹脂組成物
JP4347110B2 (ja) 2003-10-22 2009-10-21 東京応化工業株式会社 電子線又はｅｕｖ用ポジ型レジスト組成物
US7122291B2 (en) * 2004-08-02 2006-10-17 Az Electronic Materials Usa Corp. Photoresist compositions
US7622240B2 (en) 2005-02-28 2009-11-24 International Business Machines Corporation Low blur molecular resist
JP2009029848A (ja) * 2007-07-24 2009-02-12 Mitsubishi Rayon Co Ltd 重合体及びその製造方法、レジスト組成物及びパターンが形成された基板の製造方法
JP5806800B2 (ja) * 2008-03-28 2015-11-10 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP5841707B2 (ja) * 2008-09-05 2016-01-13 富士フイルム株式会社 ポジ型レジスト組成物、該組成物を用いたパターン形成方法及び該組成物に用いられる樹脂
JP5548416B2 (ja) * 2008-09-29 2014-07-16 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5448651B2 (ja) * 2009-08-31 2014-03-19 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及びそれを用いたパターン形成方法
JP5639772B2 (ja) * 2010-03-10 2014-12-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜及びパターン形成方法
JP5560854B2 (ja) * 2010-03-31 2014-07-30 Ｊｓｒ株式会社 感放射線性樹脂組成物およびそれに用いる重合体
JP6144005B2 (ja) * 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
JP5780222B2 (ja) * 2011-09-16 2015-09-16 信越化学工業株式会社 パターン形成方法

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EP0520654A1 (en) 1991-06-21 1992-12-30 Hoechst Celanese Corporation Deep UV light sensitive positive photoresist compositions
JPH05173333A (ja) 1991-12-20 1993-07-13 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JPH0950126A (ja) * 1995-08-08 1997-02-18 Fujitsu Ltd レジスト組成物及びレジストパターン形成方法
TW448344B (en) * 1995-10-09 2001-08-01 Shinetsu Chemical Co Chemically amplified positive resist composition
JP3591672B2 (ja) 1996-02-05 2004-11-24 富士写真フイルム株式会社 ポジ型感光性組成物
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DE69800164T2 (de) 1997-03-31 2000-10-05 Fuji Photo Film Co., Ltd. Positiv-arbeitende photoempfindliche Zusammensetzung
WO2000001684A1 (en) * 1998-07-03 2000-01-13 Nec Corporation (meth)acrylate derivatives bearing lactone structure, polymers, photoresist compositions and process of forming patterns with the same
US6291130B1 (en) * 1998-07-27 2001-09-18 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP3991466B2 (ja) 1998-08-21 2007-10-17 Ｊｓｒ株式会社 感放射線性樹脂組成物
KR20000076585A (ko) * 1999-02-02 2000-12-26 미우라 아끼라 방사선 민감성 수지 조성물
JP4480835B2 (ja) 1999-02-12 2010-06-16 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ポジ型感放射線性樹脂組成物
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
JP2001083709A (ja) 1999-09-09 2001-03-30 Fuji Photo Film Co Ltd ポジ型感放射線性樹脂組成物
JP3755571B2 (ja) 1999-11-12 2006-03-15 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP3963624B2 (ja) * 1999-12-22 2007-08-22 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP2001215704A (ja) 2000-01-31 2001-08-10 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
KR100585365B1 (ko) * 2000-04-13 2006-06-01 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI476515B (zh) * 2009-03-26 2015-03-11 富士軟片股份有限公司 感光化射線或感放射線樹脂組成物、使用它之光阻膜及圖案形成方法

Also Published As

Publication number Publication date
KR20030051186A (ko) 2003-06-25
JP2003167333A (ja) 2003-06-13
DE60236243D1 (de) 2010-06-17
JP4025074B2 (ja) 2007-12-19
US20030134225A1 (en) 2003-07-17
KR100931617B1 (ko) 2009-12-14
EP1296190A1 (en) 2003-03-26
EP1296190B1 (en) 2010-05-05
US7255971B2 (en) 2007-08-14

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