TWI266357B - Pattern forming method and method for manufacturing semiconductor device - Google Patents

Pattern forming method and method for manufacturing semiconductor device

Info

Publication number
TWI266357B
TWI266357B TW094108797A TW94108797A TWI266357B TW I266357 B TWI266357 B TW I266357B TW 094108797 A TW094108797 A TW 094108797A TW 94108797 A TW94108797 A TW 94108797A TW I266357 B TWI266357 B TW I266357B
Authority
TW
Taiwan
Prior art keywords
substrate
coating film
order
resist
resist film
Prior art date
Application number
TW094108797A
Other languages
English (en)
Other versions
TW200540972A (en
Inventor
Hirokazu Kato
Yasunobu Onishi
Daisuke Kawamura
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of TW200540972A publication Critical patent/TW200540972A/zh
Application granted granted Critical
Publication of TWI266357B publication Critical patent/TWI266357B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW094108797A 2004-03-24 2005-03-22 Pattern forming method and method for manufacturing semiconductor device TWI266357B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004087419A JP4016009B2 (ja) 2004-03-24 2004-03-24 パターン形成方法及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200540972A TW200540972A (en) 2005-12-16
TWI266357B true TWI266357B (en) 2006-11-11

Family

ID=34990362

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094108797A TWI266357B (en) 2004-03-24 2005-03-22 Pattern forming method and method for manufacturing semiconductor device

Country Status (4)

Country Link
US (1) US20050214695A1 (zh)
JP (1) JP4016009B2 (zh)
CN (1) CN1673873A (zh)
TW (1) TWI266357B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019161A (ja) * 2005-07-06 2007-01-25 Dainippon Screen Mfg Co Ltd パターン形成方法及び被膜形成装置
JP2007073684A (ja) 2005-09-06 2007-03-22 Toshiba Corp パターン形成方法
US7417469B2 (en) * 2006-11-13 2008-08-26 International Business Machines Corporation Compensation for leakage current from dynamic storage node variation by the utilization of an automatic self-adaptive keeper
US7790360B2 (en) * 2007-03-05 2010-09-07 Micron Technology, Inc. Methods of forming multiple lines
US9753369B2 (en) 2011-03-24 2017-09-05 Nissan Chemical Idustries, Ltd. Polymer-containing developer
JP2013172082A (ja) * 2012-02-22 2013-09-02 Toshiba Corp パターン形成方法、半導体装置の製造方法および塗布装置
JP5857001B2 (ja) * 2013-07-19 2016-02-10 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理用記録媒体
KR102198345B1 (ko) 2013-08-23 2021-01-05 닛산 가가쿠 가부시키가이샤 레지스트 패턴에 도포되는 도포액 및 반전패턴의 형성방법
US10025191B2 (en) 2014-02-26 2018-07-17 Nissan Chemical Industries, Ltd. Polymer-containing coating liquid applied to resist pattern
WO2016190261A1 (ja) 2015-05-25 2016-12-01 日産化学工業株式会社 レジストパターン塗布用組成物
US11009795B2 (en) * 2016-03-30 2021-05-18 Nissan Chemical Corporation Aqueous solution for resist pattern coating and pattern forming methods using the same
KR102628534B1 (ko) * 2016-09-13 2024-01-26 에스케이하이닉스 주식회사 반도체 기판의 처리 방법
WO2018066517A1 (ja) 2016-10-04 2018-04-12 日産化学工業株式会社 溶剤置換法を用いたレジストパターン塗布用組成物の製造方法
US20220206395A1 (en) 2019-03-29 2022-06-30 Nissan Chemical Corporation Composition for resist pattern metallization process
US20220344156A1 (en) * 2021-04-23 2022-10-27 Changxin Memory Technologies, Inc. Method for fabricating semiconductor structure
CN115241047A (zh) * 2021-04-23 2022-10-25 长鑫存储技术有限公司 半导体结构的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6221562B1 (en) * 1998-11-13 2001-04-24 International Business Machines Corporation Resist image reversal by means of spun-on-glass
US6329124B1 (en) * 1999-05-26 2001-12-11 Advanced Micro Devices Method to produce high density memory cells and small spaces by using nitride spacer
JP3343341B2 (ja) * 2000-04-28 2002-11-11 ティーディーケイ株式会社 微細パターン形成方法及びそれに用いる現像／洗浄装置、及びそれを用いためっき方法、及びそれを用いた薄膜磁気ヘッドの製造方法
JP3848070B2 (ja) * 2000-09-27 2006-11-22 株式会社東芝 パターン形成方法
JP2004103926A (ja) * 2002-09-11 2004-04-02 Renesas Technology Corp レジストパターン形成方法とそれを用いた半導体装置の製造方法およびレジスト表層処理剤
KR100493029B1 (ko) * 2002-10-26 2005-06-07 삼성전자주식회사 반도체 소자의 미세 패턴 형성방법
TWI281690B (en) * 2003-05-09 2007-05-21 Toshiba Corp Pattern forming method, and manufacturing method for semiconductor using the same
US7119025B2 (en) * 2004-04-08 2006-10-10 Micron Technology, Inc. Methods of eliminating pattern collapse on photoresist patterns

Also Published As

Publication number Publication date
TW200540972A (en) 2005-12-16
CN1673873A (zh) 2005-09-28
JP4016009B2 (ja) 2007-12-05
US20050214695A1 (en) 2005-09-29
JP2005277052A (ja) 2005-10-06

Similar Documents

Publication Publication Date Title
TWI266357B (en) Pattern forming method and method for manufacturing semiconductor device
TW200700933A (en) Immersion lithography and treatment system thereof
TW200707125A (en) Immersion lithography and treatment method thereof
US10101662B2 (en) Developing method
TWI266373B (en) Pattern forming method and method of manufacturing semiconductor device
US20090130601A1 (en) Method for fabricating semiconductor device
WO2006033852A3 (en) Structured surface using ablatable radiation sensitive material
WO2005064409A3 (en) Removable pellicle for immersion lithography
TW201129872A (en) Pattern forming method and composition for forming resist underlayer film
TW200631073A (en) Method of processing substrate, exposure device and method of manufacturing device
SG130083A1 (en) A system and method for photolithography in semiconductor manufacturing
TW200739770A (en) System, apparatus, and method for advanced solder bumping
CN102361542A (zh) 具台阶的印刷电路板制作工艺
WO2008120785A1 (ja) 露光装置及び露光方法
EP1632813A3 (en) Exposure system and pattern formation method
TW201726289A (zh) 成膜遮罩之製造方法
TW200801815A (en) Method for forming pattern and composition for forming organic thin film using therefor
JP2007325859A (ja) ゴルフクラブヘッドのエッチング方法
EP1732371A3 (en) Method of forming a conductive pattern on a substrate
TW200700928A (en) Semiconductor device manufacturing method for preventing patterns from inclining in drying process
TW200721255A (en) Pattern forming method
JP2005256090A5 (zh)
EP1708253A3 (en) Semiconductor device fabrication method
JP2010278204A (ja) レジストパターンの形成方法
JP2008066467A (ja) パターン形成方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees