TWI265649B - Doping of semiconductor - Google Patents

Doping of semiconductor

Info

Publication number
TWI265649B
TWI265649B TW093130645A TW93130645A TWI265649B TW I265649 B TWI265649 B TW I265649B TW 093130645 A TW093130645 A TW 093130645A TW 93130645 A TW93130645 A TW 93130645A TW I265649 B TWI265649 B TW I265649B
Authority
TW
Taiwan
Prior art keywords
charge carrier
carrier mobility
doping
doped
organic
Prior art date
Application number
TW093130645A
Other languages
English (en)
Other versions
TW200514289A (en
Inventor
Ansgar Werner
Martin Pfeiffer
Kentaro Harada
Karl Leo
Original Assignee
Univ Dresden Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Dresden Tech filed Critical Univ Dresden Tech
Publication of TW200514289A publication Critical patent/TW200514289A/zh
Application granted granted Critical
Publication of TWI265649B publication Critical patent/TWI265649B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Electroluminescent Light Sources (AREA)
  • Battery Electrode And Active Subsutance (AREA)
TW093130645A 2003-10-10 2004-10-08 Doping of semiconductor TWI265649B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10347856A DE10347856B8 (de) 2003-10-10 2003-10-10 Halbleiterdotierung

Publications (2)

Publication Number Publication Date
TW200514289A TW200514289A (en) 2005-04-16
TWI265649B true TWI265649B (en) 2006-11-01

Family

ID=34428422

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093130645A TWI265649B (en) 2003-10-10 2004-10-08 Doping of semiconductor

Country Status (5)

Country Link
US (1) US20070278479A1 (zh)
JP (1) JP5089983B2 (zh)
DE (1) DE10347856B8 (zh)
TW (1) TWI265649B (zh)
WO (1) WO2005036667A1 (zh)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8653537B2 (en) 2004-08-13 2014-02-18 Novaled Ag Layer assembly for a light-emitting component
DE502005002342D1 (de) 2005-03-15 2008-02-07 Novaled Ag Lichtemittierendes Bauelement
EP2264806B1 (de) 2005-04-13 2019-03-27 Novaled GmbH Anordnung für eine organische Leuchtdiode vom pin-Typ und Verfahren zum Herstellen
EP1780816B1 (en) 2005-11-01 2020-07-01 Novaled GmbH A method for producing an electronic device with a layer structure and an electronic device
DE502005004425D1 (de) * 2005-12-07 2008-07-24 Novaled Ag Verfahren zum Abscheiden eines Aufdampfmaterials
EP1806795B1 (de) 2005-12-21 2008-07-09 Novaled AG Organisches Bauelement
EP1804309B1 (en) 2005-12-23 2008-07-23 Novaled AG Electronic device with a layer structure of organic layers
EP1804308B1 (en) * 2005-12-23 2012-04-04 Novaled AG An organic light emitting device with a plurality of organic electroluminescent units stacked upon each other
EP1808909A1 (de) * 2006-01-11 2007-07-18 Novaled AG Elekrolumineszente Lichtemissionseinrichtung
US9065055B2 (en) 2006-03-21 2015-06-23 Novaled Ag Method for preparing doped organic semiconductor materials and formulation utilized therein
EP1848049B1 (de) 2006-04-19 2009-12-09 Novaled AG Lichtemittierendes Bauelement
DE102007019260B4 (de) 2007-04-17 2020-01-16 Novaled Gmbh Nichtflüchtiges organisches Speicherelement
DE102007028236A1 (de) 2007-06-20 2009-01-02 Siemens Ag Halbleitendes Material und organische Gleichrichterdiode
DE102007028237A1 (de) * 2007-06-20 2008-12-24 Osram Opto Semiconductors Gmbh Verwendung eines Metallkomplexes als p-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil
DE102007028238A1 (de) * 2007-06-20 2008-12-24 Osram Opto Semiconductors Gmbh Verwendung eines Metallkomplexes als p-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und organische Leuchtdiode
DE102007037905B4 (de) * 2007-08-10 2011-02-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Dotiertes Halbleitermaterial und dessen Verwendung
DE102007059887A1 (de) * 2007-09-26 2009-04-09 Osram Opto Semiconductors Gmbh Lichtemittierendes organisches Bauelement und Verfahren zu dessen Herstellung
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
DE102008036062B4 (de) 2008-08-04 2015-11-12 Novaled Ag Organischer Feldeffekt-Transistor
DE102008036063B4 (de) 2008-08-04 2017-08-31 Novaled Gmbh Organischer Feldeffekt-Transistor
DE102009013685B4 (de) 2009-03-20 2013-01-31 Novaled Ag Verwendung einer organischen Diode als organische Zenerdiode und Verfahren zum Betreiben
DE102009051142B4 (de) 2009-06-05 2019-06-27 Heliatek Gmbh Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung
DE102010031829B4 (de) 2009-07-21 2021-11-11 Novaled Gmbh Thermoelektrische Bauelemente mit dünnen Schichten
GB2473200B (en) 2009-09-02 2014-03-05 Pragmatic Printing Ltd Structures comprising planar electronic devices
CN102549792B (zh) 2009-10-13 2015-11-25 巴斯夫欧洲公司 生产有机太阳能电池和有机光检测器用光活性层的混合物
US20120261652A1 (en) 2009-10-14 2012-10-18 Novaled Ag Electro-Optical, Organic Semiconductor Component and Method for the Production Thereof
ES2587082T3 (es) 2009-12-16 2016-10-20 Heliatek Gmbh Elemento de construcción fotoactivo con capas orgánicas
EP2385556B1 (de) 2010-05-04 2021-01-20 Heliatek GmbH Photoaktives Bauelement mit organischen Schichten
EP2398056B1 (de) 2010-06-21 2016-03-02 Heliatek GmbH Organische Solarzelle mit mehreren Transportschichtsystemen
DE102010031979B4 (de) 2010-07-22 2014-10-30 Novaled Ag Halbleiterbauelement, Verfahren zu dessen Herstellung, Verwendung des Halbleiterbauelementes und Inverter mit zwei Halbleiterbauelementen
WO2012092972A1 (de) 2011-01-06 2012-07-12 Heliatek Gmbh Elektronisches oder optoelektronisches bauelement mit organischen schichten
US10038150B2 (en) 2011-02-25 2018-07-31 Ecole Polytechnique Federale De Lausanne (Epfl) Metal complexes for use as dopants and other uses
EP2551949A1 (en) 2011-07-28 2013-01-30 Ecole Polytechnique Fédérale de Lausanne (EPFL) Metal complexes for use as dopants and other uses
KR101957534B1 (ko) 2011-02-25 2019-03-12 에꼴 뽈리떼끄닉 뻬데랄 드 로잔느 (으뻬에프엘) 도판트로서의 용도 및 다른 용도를 위한 금속 복합체
DE102011013897A1 (de) 2011-03-11 2012-09-13 Technische Universität Dresden Organische Solarzelle
WO2013055410A1 (en) 2011-06-14 2013-04-18 Georgia Tech Research Corporation N-doping of organic semiconductors by bis-metallosandwich compounds
DE102012100642B4 (de) 2012-01-26 2015-09-10 Novaled Ag Anordnung mit mehreren organischen Halbleiterbauelementen und Verfahren zum Herstellen sowie Verwendung der Anordnung
DE102012103448B4 (de) 2012-04-19 2018-01-04 Heliatek Gmbh Verfahren zur Optimierung von in Reihe geschalteten, photoaktiven Bauelementen auf gekrümmten Oberflächen
DE102012104118B4 (de) 2012-05-10 2021-12-02 Heliatek Gmbh Lochtransportmaterialien für optoelektronische Bauelemente
DE102012104247B4 (de) 2012-05-16 2017-07-20 Heliatek Gmbh Halbleitendes organisches Material für optoelektronische Bauelemente
WO2013179223A2 (de) 2012-05-30 2013-12-05 Heliatek Gmbh Solarmodul zur anordnung auf formteil aus beton
DE102012105022A1 (de) 2012-06-11 2013-12-12 Heliatek Gmbh Fahrzeug mit flexiblen organischen Photovoltaik-Modulen
CN104428898B (zh) 2012-06-11 2018-05-08 赫里亚泰克有限责任公司 光活性组件的滤光系统
DE102012105809B4 (de) 2012-07-02 2017-12-07 Heliatek Gmbh Organisches optoelektronisches Bauelement mit transparenter Gegenelektrode und transparenter Elektrodenvorrichtung
KR102128943B1 (ko) 2012-07-02 2020-07-01 헬리아텍 게엠베하 광전자 소자용 투명 전극
DE102012105810B4 (de) 2012-07-02 2020-12-24 Heliatek Gmbh Transparente Elektrode für optoelektronische Bauelemente
DE102012105812A1 (de) 2012-07-02 2014-01-02 Heliatek Gmbh Elektrodenanordnung für optoelektronische Bauelemente
JP2014053383A (ja) * 2012-09-05 2014-03-20 Konica Minolta Inc タンデム型の有機光電変換素子およびこれを用いた太陽電池
DE102013110693B4 (de) 2013-09-27 2024-04-25 Heliatek Gmbh Photoaktives, organisches Material für optoelektronische Bauelemente

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093698A (en) * 1991-02-12 1992-03-03 Kabushiki Kaisha Toshiba Organic electroluminescent device
GB9826405D0 (en) * 1998-12-02 1999-01-27 South Bank Univ Entpr Ltd Method for forming films or layers
JP2001006878A (ja) * 1999-06-22 2001-01-12 Matsushita Electric Ind Co Ltd 薄膜ｅｌ素子およびその駆動方法
US6392250B1 (en) * 2000-06-30 2002-05-21 Xerox Corporation Organic light emitting devices having improved performance
DE10207859A1 (de) * 2002-02-20 2003-09-04 Univ Dresden Tech Dotiertes organisches Halbleitermaterial sowie Verfahren zu dessen Herstellung
AU2002323418A1 (en) * 2002-04-08 2003-10-27 The University Of Southern California Doped organic carrier transport materials

Also Published As

Publication number Publication date
TW200514289A (en) 2005-04-16
DE10347856B8 (de) 2006-10-19
WO2005036667A1 (de) 2005-04-21
DE10347856B4 (de) 2006-07-06
JP5089983B2 (ja) 2012-12-05
JP2007512681A (ja) 2007-05-17
DE10347856A1 (de) 2005-06-02
US20070278479A1 (en) 2007-12-06

Similar Documents

Publication Publication Date Title
TWI265649B (en) Doping of semiconductor
TWI265648B (en) Doped organic semiconductor material and process for manufacturing the same
WO2003070822A3 (de) Dotiertes organisches halbleitermaterial sowie verfahren zu dessen herstellung
DE60238693D1 (de) Leistungs-mosfet mit graben-gateelektrode und verfahren zu dessen herstellung
WO2010078054A3 (en) Tunnel field effect transistor and method of manufacturing same
TW200625632A (en) Semiconductor device with high-k dielectric and quasi-metal gate, and method of forming thereof
TW200705641A (en) Initial-on SCR device for on-chip ESD protection
TW200512930A (en) Low leakage heterojunction vertical transistors and high performance devices thereof
WO2004061974A3 (en) Silicon carbide power mos field effect transistors and manufacturing methods
TW200514239A (en) LDMOS device with isolation guard rings
TW200711173A (en) Arrangement for an organic pin-type light-emitting diode and method for manufacturing
TW200703646A (en) Trench MOSFET and method of manufacturing the same
EP1357603A3 (en) Semiconductor device
WO2010000716A3 (de) Heterojunction-solarzelle mit absorber mit integriertem dotierprofil
AU2003279751A8 (en) Method of fabricating semiconductor by nitrogen doping of silicon film
TW200729491A (en) Silicon carbide semiconductor device and method for producing the same
DE602004008481D1 (de) Bis(2-acenyl)acetylen- halbleiter
WO2007034376A3 (en) Memory device with a strained base layer and method of manufacturing such a memory device
WO2005045901A8 (en) METHOD AND STRUCTURE FOR FORMING STRAINED Si FOR CMOS DEVICES
TW200620481A (en) Method for making a semiconductor structure using silicon germanium
CN101030541A (zh) 半导体晶体管元件及其制作方法
TW200709305A (en) Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devices
MY134230A (en) Ethynyl containing electron transport dyes and compositions
TW200739880A (en) Rotational shear stress for charge carrier mobility modification
GB2434033A (en) Organic transistor