TWI265144B - Silicon plate, producing method thereof, and solar cell - Google Patents

Silicon plate, producing method thereof, and solar cell

Info

Publication number
TWI265144B
TWI265144B TW091123696A TW91123696A TWI265144B TW I265144 B TWI265144 B TW I265144B TW 091123696 A TW091123696 A TW 091123696A TW 91123696 A TW91123696 A TW 91123696A TW I265144 B TWI265144 B TW I265144B
Authority
TW
Taiwan
Prior art keywords
silicon plate
solar cell
grain boundary
producing method
boundary lines
Prior art date
Application number
TW091123696A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshihiro Tsukuda
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Application granted granted Critical
Publication of TWI265144B publication Critical patent/TWI265144B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW091123696A 2001-10-18 2002-10-15 Silicon plate, producing method thereof, and solar cell TWI265144B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001320602A JP2003128411A (ja) 2001-10-18 2001-10-18 板状シリコン、板状シリコンの製造方法および太陽電池

Publications (1)

Publication Number Publication Date
TWI265144B true TWI265144B (en) 2006-11-01

Family

ID=19137964

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091123696A TWI265144B (en) 2001-10-18 2002-10-15 Silicon plate, producing method thereof, and solar cell

Country Status (5)

Country Link
US (2) US7071489B2 (enExample)
JP (1) JP2003128411A (enExample)
CN (1) CN100444409C (enExample)
TW (1) TWI265144B (enExample)
WO (1) WO2003033404A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427805B (zh) * 2005-05-09 2014-02-21 大同特殊鋼股份有限公司 Condenser type solar power generation device
TWI608629B (zh) * 2012-02-06 2017-12-11 畢卡索勒公司 太陽能電池及其製造方法
US9960287B2 (en) 2014-02-11 2018-05-01 Picasolar, Inc. Solar cells and methods of fabrication thereof

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041111A (ja) * 2004-07-26 2006-02-09 Sharp Corp 半導体基板および太陽電池
NO326797B1 (no) * 2005-06-10 2009-02-16 Elkem As Fremgangsmate og apparat for raffinering av smeltet materiale
EP1811064A1 (fr) * 2006-01-12 2007-07-25 Vesuvius Crucible Company Creuset pour le traitement de silicium à l'état fondu
MX2008011655A (es) * 2006-03-15 2009-01-14 Resc Invest Llc Metodo para hacer silicio para celdas solares y otras aplicaciones.
EP2248152A1 (en) * 2008-02-29 2010-11-10 Corning Incorporated Methods of making an unsupported article of pure or doped semiconducting material
DE102008049303B4 (de) * 2008-09-29 2012-05-24 Qimonda Ag Verfahren zur Herstellung eines Silizium-Wafers und Siliziumwafer für Solarzellen
JP5133848B2 (ja) * 2008-10-31 2013-01-30 シャープ株式会社 下地板製造方法ならびに下地板
US7771643B1 (en) 2009-02-27 2010-08-10 Corning Incorporated Methods of making an unsupported article of semiconducting material by controlled undercooling
TWI379430B (en) * 2009-04-16 2012-12-11 Atomic Energy Council A method of fabricating a thin interface for internal light reflection and impurities isolation
US8540920B2 (en) * 2009-05-14 2013-09-24 Corning Incorporated Methods of making an article of semiconducting material on a mold comprising particles of a semiconducting material
US8398768B2 (en) * 2009-05-14 2013-03-19 Corning Incorporated Methods of making an article of semiconducting material on a mold comprising semiconducting material
US8480803B2 (en) * 2009-10-30 2013-07-09 Corning Incorporated Method of making an article of semiconducting material
US8591795B2 (en) * 2009-12-04 2013-11-26 Corning Incorporated Method of exocasting an article of semiconducting material
US8242033B2 (en) * 2009-12-08 2012-08-14 Corning Incorporated High throughput recrystallization of semiconducting materials
WO2011118716A1 (ja) * 2010-03-25 2011-09-29 京セラ株式会社 光電変換装置、および光電変換装置の製造方法
KR101086260B1 (ko) * 2010-03-26 2011-11-24 한국철강 주식회사 플렉서블 기판 또는 인플렉서블 기판을 포함하는 광기전력 장치 및 광기전력 장치의 제조 방법
US20120299218A1 (en) * 2011-05-27 2012-11-29 Glen Bennett Cook Composite active molds and methods of making articles of semiconducting material
US20130052802A1 (en) * 2011-08-22 2013-02-28 Glen Bennett Cook Mold thermophysical properties for thickness uniformity optimization of exocast sheet
WO2014001888A1 (en) * 2012-06-27 2014-01-03 Rgs Development B.V. Film of polycrystalline semiconductor material, method of making same and undercooling molds therefor, and electronic device
WO2014001886A1 (en) * 2012-06-27 2014-01-03 Rgs Development B.V. Film of polycrystalline semiconductor material, method of making same and orienting/undercooling molds therefor, and electronic device
KR102011852B1 (ko) * 2012-12-13 2019-08-20 한국전자통신연구원 태양 전지 및 그 제조 방법
US9246085B1 (en) * 2014-07-23 2016-01-26 Intermolecular, Inc. Shaping ReRAM conductive filaments by controlling grain-boundary density
CN104465815B (zh) * 2014-12-12 2016-09-07 常州时创能源科技有限公司 多晶硅太阳能电池片
DE102017221724A1 (de) 2017-12-01 2019-06-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von polykristallinem Silizium
CN108842179B (zh) * 2018-07-13 2020-04-14 浙江大学 一种设置σ3孪晶界制备双晶向多晶硅铸锭的方法
CN111879832A (zh) * 2020-06-12 2020-11-03 宁波水表(集团)股份有限公司 一种用于在自来水中进行余氯检测的传感器及其制备方法
CN112599619A (zh) * 2020-12-29 2021-04-02 成都晔凡科技有限公司 制造太阳能电池片的方法和太阳能电池片

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5992909A (ja) 1982-11-17 1984-05-29 Toshiba Corp 平板状多結晶シリコンの製造方法
JPS61275119A (ja) 1985-05-28 1986-12-05 Kawasaki Steel Corp シリコンリボンの製造方法
JP2693032B2 (ja) 1990-10-16 1997-12-17 キヤノン株式会社 半導体層の形成方法及びこれを用いる太陽電池の製造方法
EP0978146A4 (en) * 1997-03-04 2000-08-09 Astropower Inc Columnar-grained polycrystalline solar cell substrate and improved method of manufacture
JP3523986B2 (ja) 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
FR2774806B1 (fr) 1998-02-09 2000-03-17 Schneider Electric Ind Sa Dispositif de declenchement pour un disjoncteur equipe d'une signalisation de defaut electrique
JP3658213B2 (ja) * 1998-11-19 2005-06-08 富士通株式会社 半導体装置の製造方法
JP2000302431A (ja) 1999-04-14 2000-10-31 Mitsubishi Materials Corp 板状シリコンの製造装置及び製造方法
JP3656821B2 (ja) * 1999-09-14 2005-06-08 シャープ株式会社 多結晶シリコンシートの製造装置及び製造方法
JP4111669B2 (ja) * 1999-11-30 2008-07-02 シャープ株式会社 シート製造方法、シートおよび太陽電池
JP4121697B2 (ja) 1999-12-27 2008-07-23 シャープ株式会社 結晶シートの製造方法およびその製造装置
JP3837038B2 (ja) 2001-06-21 2006-10-25 シャープ株式会社 結晶シート製造装置、結晶シート製造方法、基板および太陽電池
WO2003049162A1 (en) 2001-12-04 2003-06-12 Sharp Kabushiki Kaisha Method of manufacturing solid phase sheet, and solar battery using the solid phase sheet

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427805B (zh) * 2005-05-09 2014-02-21 大同特殊鋼股份有限公司 Condenser type solar power generation device
TWI608629B (zh) * 2012-02-06 2017-12-11 畢卡索勒公司 太陽能電池及其製造方法
US9960287B2 (en) 2014-02-11 2018-05-01 Picasolar, Inc. Solar cells and methods of fabrication thereof

Also Published As

Publication number Publication date
US7071489B2 (en) 2006-07-04
JP2003128411A (ja) 2003-05-08
US20060202208A1 (en) 2006-09-14
CN100444409C (zh) 2008-12-17
US20040246789A1 (en) 2004-12-09
CN1555341A (zh) 2004-12-15
US7659542B2 (en) 2010-02-09
WO2003033404A1 (fr) 2003-04-24

Similar Documents

Publication Publication Date Title
WO2003033404A1 (fr) Plaque de silicium, procede de fabrication associe et pile solaire
TW200620664A (en) Semicomductor device and method for manufacturing the same
TWI264756B (en) Semiconductor device
ATE478439T1 (de) Verfahren zur rauhätzung von siliziumsolarzellen
CA2334627A1 (en) Composite substrate, thin-film electroluminescent device using the substrate, and production process for the device
EP2400532A3 (en) Diamond semiconductor element and process for producing the same
TW376545B (en) Method of producing silicon layer having surface controlling to be even
TW200715380A (en) Process for lateral disjonting of a semiconductor wafer and opto-electronic element
EP1139436A3 (en) Solar cell device
TW200520112A (en) Method for production of a film
MY143357A (en) A carrier substrate for electronic components
TW200715456A (en) Substrate mounting base, method for manufacturing the same and substrate processing apparatus
WO2005001904A3 (en) Method of forming freestanding semiconductor layer
TW200504796A (en) Stereolithographic seal and support structure for semiconductor wafer
DE60235906D1 (de) Erfahren
TW200703716A (en) Nitride semiconductor element and its fabrication process
TW200710295A (en) Nitride semiconductor substrate, and method for working nitride semiconductor substrate
TW200511454A (en) Adhesive sheet for producing a semiconductor device
TW200605169A (en) Circuit device and process for manufacture thereof
AU2003231965A1 (en) Silicon carbide microelectromechanical devices with electronic circuitry
TW200605379A (en) Photoelectric conversion device, image sensor, and method for manufacturing photoelectric conversion device
TW200715621A (en) Procedure for producing a semiconductor component with a planner contact and the semiconductor component
WO1999058733A3 (de) Verfahren und vorrichtung zum thermischen behandeln von substraten
TW200511609A (en) Light-emitting device
AU3950300A (en) Siliceous substrate with a silane layer and its manufacture

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees