TWI263706B - Chemical processor, chemical processing method, and method for manufacturing semiconductor device - Google Patents
Chemical processor, chemical processing method, and method for manufacturing semiconductor deviceInfo
- Publication number
- TWI263706B TWI263706B TW092114217A TW92114217A TWI263706B TW I263706 B TWI263706 B TW I263706B TW 092114217 A TW092114217 A TW 092114217A TW 92114217 A TW92114217 A TW 92114217A TW I263706 B TWI263706 B TW I263706B
- Authority
- TW
- Taiwan
- Prior art keywords
- chemical
- semiconductor device
- manufacturing semiconductor
- processor
- processing method
- Prior art date
Links
- 239000000126 substance Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title 2
- 238000012993 chemical processing Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/974—Substrate surface preparation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- Weting (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002337539A JP4112343B2 (ja) | 2002-11-21 | 2002-11-21 | 薬液処理装置および薬液処理方法ならびにそれを用いた半導体デバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200408731A TW200408731A (en) | 2004-06-01 |
TWI263706B true TWI263706B (en) | 2006-10-11 |
Family
ID=32701025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092114217A TWI263706B (en) | 2002-11-21 | 2003-05-27 | Chemical processor, chemical processing method, and method for manufacturing semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (2) | US6849865B1 (zh) |
JP (1) | JP4112343B2 (zh) |
KR (1) | KR100511018B1 (zh) |
TW (1) | TWI263706B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7354523B2 (en) * | 2004-06-17 | 2008-04-08 | Macronix International Co., Ltd. | Methods for sidewall etching and etching during filling of a trench |
US7470927B2 (en) * | 2005-05-18 | 2008-12-30 | Megica Corporation | Semiconductor chip with coil element over passivation layer |
JP4853811B2 (ja) * | 2007-03-28 | 2012-01-11 | 株式会社サワーコーポレーション | 平面形状部品の洗浄装置 |
US8227278B2 (en) * | 2008-09-05 | 2012-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Methods for manufacturing thin film transistor and display device |
US10373864B2 (en) * | 2016-12-27 | 2019-08-06 | Applied Materials, Inc. | Systems and methods for wetting substrates |
KR102538179B1 (ko) | 2018-09-04 | 2023-06-01 | 삼성전자주식회사 | 습식 식각 장치 |
CN111151500A (zh) * | 2018-11-08 | 2020-05-15 | 世源科技工程有限公司 | 一种低清洗剂现场容量的掩模板清洗的方法和装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55148798A (en) * | 1979-05-10 | 1980-11-19 | Nippon Kokan Kk <Nkk> | Manufacture of zinc elecroplated steel sheet |
US4468127A (en) * | 1980-09-02 | 1984-08-28 | Vito Agosta | Process for metering and mixing liquids in arbitrary mass proportions |
JPS61148821A (ja) * | 1984-12-24 | 1986-07-07 | Hitachi Ltd | 処理装置 |
GB2213835B (en) * | 1987-12-18 | 1992-07-08 | Gen Electric Co Plc | Deposition apparatus |
JPH03230526A (ja) * | 1990-02-06 | 1991-10-14 | Fujitsu Ltd | ウェーハ洗浄方法 |
JPH05299406A (ja) | 1991-01-29 | 1993-11-12 | Ricoh Co Ltd | 基板洗浄槽 |
JPH0521413A (ja) | 1991-07-10 | 1993-01-29 | Matsushita Electric Ind Co Ltd | 半導体基板洗浄装置及び半導体基板洗浄方法 |
KR100209751B1 (ko) * | 1996-04-12 | 1999-07-15 | 구본준 | 반도체 웨이퍼 세정 장치 |
US6139755A (en) * | 1997-06-14 | 2000-10-31 | Marte; Walter | Oxidation method, nozzle system and sewage treatment plant |
JP2968779B1 (ja) * | 1998-05-20 | 1999-11-02 | 山形日本電気株式会社 | 板状体の洗浄装置 |
JP3635951B2 (ja) * | 1998-12-07 | 2005-04-06 | 独立行政法人科学技術振興機構 | 超純水中の水酸化物イオンによる洗浄方法 |
JP2001358111A (ja) * | 2000-06-12 | 2001-12-26 | Toshiba Corp | ウェーハ洗浄方法及び半導体装置の製造方法 |
JP2002299304A (ja) * | 2002-02-13 | 2002-10-11 | Tadahiro Omi | ウエット処理装置 |
-
2002
- 2002-11-21 JP JP2002337539A patent/JP4112343B2/ja not_active Expired - Fee Related
-
2003
- 2003-05-27 TW TW092114217A patent/TWI263706B/zh not_active IP Right Cessation
- 2003-07-10 US US10/615,769 patent/US6849865B1/en not_active Expired - Fee Related
- 2003-08-14 KR KR10-2003-0056395A patent/KR100511018B1/ko not_active IP Right Cessation
-
2004
- 2004-12-02 US US11/000,978 patent/US6992016B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100511018B1 (ko) | 2005-08-30 |
TW200408731A (en) | 2004-06-01 |
JP4112343B2 (ja) | 2008-07-02 |
US20050092431A1 (en) | 2005-05-05 |
KR20040045278A (ko) | 2004-06-01 |
JP2004172437A (ja) | 2004-06-17 |
US6992016B2 (en) | 2006-01-31 |
US6849865B1 (en) | 2005-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |