TWI250726B - High frequency power amplification module and wireless communication device - Google Patents

High frequency power amplification module and wireless communication device Download PDF

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Publication number
TWI250726B
TWI250726B TW093134151A TW93134151A TWI250726B TW I250726 B TWI250726 B TW I250726B TW 093134151 A TW093134151 A TW 093134151A TW 93134151 A TW93134151 A TW 93134151A TW I250726 B TWI250726 B TW I250726B
Authority
TW
Taiwan
Prior art keywords
terminal
signal
frequency power
control
output
Prior art date
Application number
TW093134151A
Other languages
English (en)
Chinese (zh)
Other versions
TW200509547A (en
Inventor
Masahito Numanami
Hitoshi Akamine
Tsuyoshi Shibuya
Masatoshi Morikawa
Yasuhiro Nunokawa
Original Assignee
Hitachi Tobu Semiconductor Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tobu Semiconductor Ltd, Hitachi Ltd filed Critical Hitachi Tobu Semiconductor Ltd
Publication of TW200509547A publication Critical patent/TW200509547A/zh
Application granted granted Critical
Publication of TWI250726B publication Critical patent/TWI250726B/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7206—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/045—Circuits with power amplifiers with means for improving efficiency
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
TW093134151A 1999-12-13 2000-12-13 High frequency power amplification module and wireless communication device TWI250726B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35335599A JP2001168647A (ja) 1999-12-13 1999-12-13 高周波電力増幅モジュール及び無線通信装置

Publications (2)

Publication Number Publication Date
TW200509547A TW200509547A (en) 2005-03-01
TWI250726B true TWI250726B (en) 2006-03-01

Family

ID=18430283

Family Applications (2)

Application Number Title Priority Date Filing Date
TW093134151A TWI250726B (en) 1999-12-13 2000-12-13 High frequency power amplification module and wireless communication device
TW089126588A TWI242859B (en) 1999-12-13 2000-12-13 High frequency power amplifier module and wireless communication system

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW089126588A TWI242859B (en) 1999-12-13 2000-12-13 High frequency power amplifier module and wireless communication system

Country Status (4)

Country Link
US (4) US6433639B1 (cg-RX-API-DMAC10.html)
JP (1) JP2001168647A (cg-RX-API-DMAC10.html)
KR (1) KR20010070295A (cg-RX-API-DMAC10.html)
TW (2) TWI250726B (cg-RX-API-DMAC10.html)

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GB0107264D0 (en) * 2001-03-22 2001-05-16 Nokia Networks Oy Processing signals in a transmitter
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US7116173B2 (en) 2002-02-28 2006-10-03 Renesas Technology Corp. High-frequency power amplifier circuit and electronic part for communication
JP2003298360A (ja) * 2002-03-29 2003-10-17 Hitachi Ltd 高周波増幅器
US6937101B2 (en) 2002-04-30 2005-08-30 Skyworks Solutions, Inc. Dual mode power amplifier having a common controller
WO2004023649A1 (ja) * 2002-09-05 2004-03-18 Renesas Technology Corp. 高周波電力増幅用電子部品および無線通信システム
US6756852B2 (en) * 2002-09-05 2004-06-29 Gatax Technology Co., Ltd. Method for reducing output noise of a power amplifier
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DE10261388B4 (de) * 2002-12-30 2012-03-01 Infineon Technologies Ag Schaltung zur Arbeitspunkteinstellung von Mehrfach-Gate-Feldeffekttransistoren
JP4245391B2 (ja) * 2003-03-27 2009-03-25 株式会社ルネサステクノロジ 無線通信システムおよび通信用半導体集積回路
JP2004328555A (ja) * 2003-04-28 2004-11-18 Renesas Technology Corp 高周波電力増幅用電子部品および無線通信システム
US7010057B2 (en) * 2003-09-04 2006-03-07 Nokia Corporation Dual mode multi-slot EGPRS transmitter
US7304539B2 (en) * 2003-10-16 2007-12-04 Renesas Technology Corporation High frequency power amplifier circuit and electronic component for high frequency power amplifier
US7177370B2 (en) * 2003-12-17 2007-02-13 Triquint Semiconductor, Inc. Method and architecture for dual-mode linear and saturated power amplifier operation
US7358816B2 (en) * 2004-11-11 2008-04-15 Samsung Electronics Co., Ltd. Variable gain amplifier
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US7342456B2 (en) * 2006-04-19 2008-03-11 Northrop Grumman Corporation DC-bias network for a distributed amplifier
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US8160518B2 (en) * 2006-08-10 2012-04-17 Freescale Semiconductor, Inc. Multi-mode transceiver having tunable harmonic termination circuit and method therefor
US7986186B2 (en) * 2006-12-15 2011-07-26 Lehigh University Adaptive bias technique for field effect transistor
CN101114860B (zh) * 2007-08-17 2011-04-06 华为技术有限公司 一种控制功率放大的方法及装置
US7545297B2 (en) * 2007-08-29 2009-06-09 International Business Machines Corporation Digital-to-analog converter using dual-gate transistors
US7545298B2 (en) * 2007-08-29 2009-06-09 International Business Machines Corporation Design structure for a digital-to-analog converter using dual-gate transistors
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JP4511612B2 (ja) * 2008-06-17 2010-07-28 アルプス電気株式会社 Ａｇｃ回路
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Also Published As

Publication number Publication date
US20040012445A1 (en) 2004-01-22
US6617927B2 (en) 2003-09-09
KR20010070295A (ko) 2001-07-25
TW200509547A (en) 2005-03-01
US6897728B2 (en) 2005-05-24
US20020109549A1 (en) 2002-08-15
TWI242859B (en) 2005-11-01
US20050208905A1 (en) 2005-09-22
US7145394B2 (en) 2006-12-05
JP2001168647A (ja) 2001-06-22
US6433639B1 (en) 2002-08-13

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