TWI246448B - Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby - Google Patents

Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby Download PDF

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Publication number
TWI246448B
TWI246448B TW090120699A TW90120699A TWI246448B TW I246448 B TWI246448 B TW I246448B TW 090120699 A TW090120699 A TW 090120699A TW 90120699 A TW90120699 A TW 90120699A TW I246448 B TWI246448 B TW I246448B
Authority
TW
Taiwan
Prior art keywords
polishing
substrate
carrier
head
during
Prior art date
Application number
TW090120699A
Other languages
English (en)
Chinese (zh)
Inventor
Jiro Kajiwara
Gerard S Moloney
Huey-Ming Wang
David A Hansen
Original Assignee
Multi Planar Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/652,855 external-priority patent/US6527625B1/en
Priority claimed from US09/652,854 external-priority patent/US6540590B1/en
Application filed by Multi Planar Technologies Inc filed Critical Multi Planar Technologies Inc
Application granted granted Critical
Publication of TWI246448B publication Critical patent/TWI246448B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • B24B37/32Retaining rings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW090120699A 2000-08-31 2001-08-23 Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby TWI246448B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US65296300A 2000-08-31 2000-08-31
US65363600A 2000-08-31 2000-08-31
US09/652,855 US6527625B1 (en) 2000-08-31 2000-08-31 Chemical mechanical polishing apparatus and method having a soft backed polishing head
US09/652,854 US6540590B1 (en) 2000-08-31 2000-08-31 Chemical mechanical polishing apparatus and method having a rotating retaining ring

Publications (1)

Publication Number Publication Date
TWI246448B true TWI246448B (en) 2006-01-01

Family

ID=27505281

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090120699A TWI246448B (en) 2000-08-31 2001-08-23 Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby

Country Status (5)

Country Link
JP (2) JP2004518270A (fr)
KR (1) KR100920709B1 (fr)
AU (1) AU2001286972A1 (fr)
TW (1) TWI246448B (fr)
WO (1) WO2002018101A2 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400139B (zh) * 2006-08-30 2013-07-01 羅門哈斯電子材料Cmp控股公司 具有不均勻間隔之溝槽的cmp墊
TWI572442B (zh) * 2009-05-14 2017-03-01 應用材料股份有限公司 研磨頭區域邊界平滑化
TWI574778B (zh) * 2015-02-11 2017-03-21 國立勤益科技大學 硏磨拋光機
CN109661721A (zh) * 2016-06-27 2019-04-19 先进尼克斯有限公司 湿式处理系统用工件固持器
CN114905386A (zh) * 2021-02-01 2022-08-16 中国石油化工股份有限公司 一种适用于均匀腐蚀速率试验用挂件前处理装置及方法
TWI829909B (zh) * 2019-04-03 2024-01-21 日商可樂麗股份有限公司 研磨墊

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7507148B2 (en) * 2002-09-27 2009-03-24 Sumco Techxiv Corporation Polishing apparatus, polishing head and polishing method
KR100752181B1 (ko) * 2005-10-05 2007-08-24 동부일렉트로닉스 주식회사 화학적 기계적 연마장치
US9610672B2 (en) * 2014-06-27 2017-04-04 Applied Materials, Inc. Configurable pressure design for multizone chemical mechanical planarization polishing head
CN107214614A (zh) * 2017-07-25 2017-09-29 蒋南 一种自动锯片抛光机
JP7113626B2 (ja) * 2018-01-12 2022-08-05 ニッタ・デュポン株式会社 研磨パッド
US12017322B2 (en) * 2018-08-14 2024-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing method

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US5020283A (en) * 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
JP2944176B2 (ja) * 1990-09-19 1999-08-30 三菱マテリアル株式会社 ウェーハの超精密研磨方法及び研磨装置
US5584746A (en) * 1993-10-18 1996-12-17 Shin-Etsu Handotai Co., Ltd. Method of polishing semiconductor wafers and apparatus therefor
US5624299A (en) * 1993-12-27 1997-04-29 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved carrier and method of use
JPH08267357A (ja) * 1995-03-31 1996-10-15 Nec Corp 基板の研磨装置及びその研磨方法
US6024630A (en) * 1995-06-09 2000-02-15 Applied Materials, Inc. Fluid-pressure regulated wafer polishing head
JP2708022B2 (ja) * 1995-08-21 1998-02-04 日本電気株式会社 研磨装置
JP3106418B2 (ja) * 1996-07-30 2000-11-06 株式会社東京精密 研磨装置
JPH10156712A (ja) * 1996-11-29 1998-06-16 Oki Electric Ind Co Ltd ウエハ研磨装置
JP3183204B2 (ja) * 1997-01-08 2001-07-09 三菱マテリアル株式会社 ウェーハ研磨装置
US6056632A (en) * 1997-02-13 2000-05-02 Speedfam-Ipec Corp. Semiconductor wafer polishing apparatus with a variable polishing force wafer carrier head
US5851140A (en) * 1997-02-13 1998-12-22 Integrated Process Equipment Corp. Semiconductor wafer polishing apparatus with a flexible carrier plate
JP2897207B1 (ja) * 1997-04-04 1999-05-31 株式会社東京精密 研磨装置
US5921855A (en) * 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
JPH10315126A (ja) * 1997-05-16 1998-12-02 Tokyo Seimitsu Co Ltd ディストリビュータリングを用いた研磨方法及び研磨装置
US6007411A (en) * 1997-06-19 1999-12-28 Interantional Business Machines Corporation Wafer carrier for chemical mechanical polishing
JP3006568B2 (ja) * 1997-12-04 2000-02-07 日本電気株式会社 ウエハ研磨装置および研磨方法
JPH11226865A (ja) * 1997-12-11 1999-08-24 Speedfam Co Ltd キャリア及びcmp装置
US6093651A (en) * 1997-12-23 2000-07-25 Intel Corporation Polish pad with non-uniform groove depth to improve wafer polish rate uniformity
US5993302A (en) * 1997-12-31 1999-11-30 Applied Materials, Inc. Carrier head with a removable retaining ring for a chemical mechanical polishing apparatus
JPH11216663A (ja) * 1998-02-03 1999-08-10 Sony Corp 研磨パッド、研磨装置および研磨方法
KR100550034B1 (ko) * 1998-04-06 2006-02-08 가부시키가이샤 에바라 세이사꾸쇼 폴리싱장치
KR20000025003A (ko) * 1998-10-07 2000-05-06 윤종용 반도체 기판의 화학 기계적 연마에 사용되는 연마 패드
US6110012A (en) * 1998-12-24 2000-08-29 Lucent Technologies Inc. Chemical-mechanical polishing apparatus and method
US6368189B1 (en) * 1999-03-03 2002-04-09 Mitsubishi Materials Corporation Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
US6225224B1 (en) * 1999-05-19 2001-05-01 Infineon Technologies Norht America Corp. System for dispensing polishing liquid during chemical mechanical polishing of a semiconductor wafer
JP2001298006A (ja) * 2000-04-17 2001-10-26 Ebara Corp 研磨装置
CN100433269C (zh) * 2000-05-12 2008-11-12 多平面技术公司 抛光装置以及与其一起使用的基片托架
US6409579B1 (en) * 2000-05-31 2002-06-25 Koninklijke Philips Electronics N.V. Method and apparatus for conditioning a polish pad at the point of polish and for dispensing slurry at the point of polish
JP2002046061A (ja) * 2000-07-31 2002-02-12 Mitsubishi Materials Corp 研磨ヘッド

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400139B (zh) * 2006-08-30 2013-07-01 羅門哈斯電子材料Cmp控股公司 具有不均勻間隔之溝槽的cmp墊
TWI572442B (zh) * 2009-05-14 2017-03-01 應用材料股份有限公司 研磨頭區域邊界平滑化
TWI574778B (zh) * 2015-02-11 2017-03-21 國立勤益科技大學 硏磨拋光機
CN109661721A (zh) * 2016-06-27 2019-04-19 先进尼克斯有限公司 湿式处理系统用工件固持器
CN109661721B (zh) * 2016-06-27 2023-09-19 先进尼克斯有限公司 湿式处理系统用工件固持器
TWI829909B (zh) * 2019-04-03 2024-01-21 日商可樂麗股份有限公司 研磨墊
CN114905386A (zh) * 2021-02-01 2022-08-16 中国石油化工股份有限公司 一种适用于均匀腐蚀速率试验用挂件前处理装置及方法

Also Published As

Publication number Publication date
AU2001286972A1 (en) 2002-03-13
KR100920709B1 (ko) 2009-10-07
WO2002018101A9 (fr) 2003-10-30
WO2002018101A3 (fr) 2003-01-23
KR20030064393A (ko) 2003-07-31
WO2002018101A2 (fr) 2002-03-07
JP5562370B2 (ja) 2014-07-30
JP2004518270A (ja) 2004-06-17
JP2012151501A (ja) 2012-08-09

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