TWI227518B - Nanoporous materials and methods of formation thereof - Google Patents

Nanoporous materials and methods of formation thereof Download PDF

Info

Publication number
TWI227518B
TWI227518B TW091121145A TW91121145A TWI227518B TW I227518 B TWI227518 B TW I227518B TW 091121145 A TW091121145 A TW 091121145A TW 91121145 A TW91121145 A TW 91121145A TW I227518 B TWI227518 B TW I227518B
Authority
TW
Taiwan
Prior art keywords
precursor
low
polymer
polymer composition
dielectric material
Prior art date
Application number
TW091121145A
Other languages
English (en)
Chinese (zh)
Inventor
Nigel Hacker
Scott Leffert
Lisa Figge
Richard Spear
William Bedwell
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Application granted granted Critical
Publication of TWI227518B publication Critical patent/TWI227518B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)
  • Organic Insulating Materials (AREA)
TW091121145A 2002-08-15 2002-09-16 Nanoporous materials and methods of formation thereof TWI227518B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/026276 WO2004017335A1 (en) 2002-08-15 2002-08-15 Nanoporous materials and methods of formation thereof

Publications (1)

Publication Number Publication Date
TWI227518B true TWI227518B (en) 2005-02-01

Family

ID=31886111

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091121145A TWI227518B (en) 2002-08-15 2002-09-16 Nanoporous materials and methods of formation thereof

Country Status (7)

Country Link
US (1) US20070100109A1 (de)
EP (1) EP1535290A4 (de)
JP (1) JP2005536026A (de)
CN (1) CN1650372A (de)
AU (1) AU2002326687A1 (de)
TW (1) TWI227518B (de)
WO (1) WO2004017335A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4158457B2 (ja) * 2002-08-27 2008-10-01 チッソ株式会社 ケイ素化合物含有複合材料および記録素子
JP4296051B2 (ja) * 2003-07-23 2009-07-15 株式会社リコー 半導体集積回路装置
US7919804B2 (en) * 2005-11-08 2011-04-05 Oracle America, Inc. Power distribution for high-speed integrated circuits
US8952118B2 (en) * 2011-08-12 2015-02-10 Gelest Technologies, Inc. Dual functional linear siloxanes, step-growth polymers derived therefrom, and methods of preparation thereof
US10102978B2 (en) * 2013-03-15 2018-10-16 Cleanvolt Energy, Inc. Electrodes and currents through the use of organic and organometallic high dielectric constant materials in energy storage devices and associated methods
JP7170921B2 (ja) * 2019-08-09 2022-11-14 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 低誘電率シリカ質膜製造組成物および硬化膜の製造方法およびそれを用いた電子デバイス

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218497B1 (en) * 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6107505A (en) * 1997-12-26 2000-08-22 Chisso Corporation Process for production of polyorganosiloxane
US6235353B1 (en) * 1998-02-24 2001-05-22 Alliedsignal Inc. Low dielectric constant films with high glass transition temperatures made by electron beam curing
US6313185B1 (en) * 1998-09-24 2001-11-06 Honeywell International Inc. Polymers having backbones with reactive groups employed in crosslinking as precursors to nanoporous thin film structures
US6177143B1 (en) * 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
US6156812A (en) * 1999-04-09 2000-12-05 Honeywell International Inc. Nanoporous material fabricated using polymeric template strands
US6472076B1 (en) * 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6107357A (en) * 1999-11-16 2000-08-22 International Business Machines Corporatrion Dielectric compositions and method for their manufacture
US6143360A (en) * 1999-12-13 2000-11-07 Dow Corning Corporation Method for making nanoporous silicone resins from alkylydridosiloxane resins
US6576300B1 (en) * 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings

Also Published As

Publication number Publication date
US20070100109A1 (en) 2007-05-03
JP2005536026A (ja) 2005-11-24
WO2004017335A1 (en) 2004-02-26
AU2002326687A1 (en) 2004-03-03
EP1535290A1 (de) 2005-06-01
EP1535290A4 (de) 2006-06-14
CN1650372A (zh) 2005-08-03

Similar Documents

Publication Publication Date Title
US6444715B1 (en) Low dielectric materials and methods of producing same
US6171687B1 (en) Infiltrated nanoporous materials and methods of producing same
TWI574988B (zh) 矽烷化聚伸芳基
JP2002544331A (ja) 溶解性試薬を使用して二次加工された微小多孔質材料
JP2005517784A (ja) オルガノシロキサン
TW574104B (en) Etch-stop resins
TWI227518B (en) Nanoporous materials and methods of formation thereof
JP4555836B2 (ja) 気孔形成用テンプレートとしてのシクロデキストリン誘導体及びそれを用いて調整された低誘電体材料
US6890641B1 (en) Low dielectric materials and methods of producing same
TW200916508A (en) Organosilane polymer with improved gap-filling properties for semiconductor device and coating composition using the same
US20060180900A1 (en) Organo-silsesquioxane polymers for forming low-k dielectrics
US20040176488A1 (en) Low dielectric materials and methods of producing same
JP2006503165A (ja) オルガノシロキサン
JP4243209B2 (ja) 絶縁膜形成材料及びそれを用いた絶縁膜
US20020076543A1 (en) Layered dielectric nanoporous materials and methods of producing same
KR100989964B1 (ko) 폴리실세스퀴옥산계 유무기 혼성 그라프트 공중합체 및그의 제조에 이용되는 기공 형성제를 포함하는 유기실란화합물과 그를 포함하는 절연막의 제조방법
JP2004300314A (ja) 多孔質絶縁膜形成材料及びそれを用いた多孔質絶縁膜
JP4004983B2 (ja) 絶縁膜形成材料及びそれを用いた絶縁膜
JP2004319977A (ja) 絶縁膜形成用材料及びそれを用いた絶縁膜
JP2004303800A (ja) 多孔質絶縁膜形成材料及びそれを用いた多孔質絶縁膜
JP2004303777A (ja) 多孔質絶縁膜形成材料及びそれを用いた多孔質絶縁膜
JP2006012905A (ja) 絶縁膜形成用材料及びそれを用いた絶縁膜
JP2000021872A (ja) 低誘電率樹脂組成物、低誘電率絶縁膜形成方法および半導体装置の製造方法
JP2004292767A (ja) 絶縁膜形成材料及びそれを用いた絶縁膜
JP2005200515A (ja) 絶縁膜形成用材料及びそれを用いた絶縁膜

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees