TWI222389B - Polishing pad, method of preparing a polishing pad and method of polishing a substrate - Google Patents
Polishing pad, method of preparing a polishing pad and method of polishing a substrate Download PDFInfo
- Publication number
- TWI222389B TWI222389B TW090133214A TW90133214A TWI222389B TW I222389 B TWI222389 B TW I222389B TW 090133214 A TW090133214 A TW 090133214A TW 90133214 A TW90133214 A TW 90133214A TW I222389 B TWI222389 B TW I222389B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- item
- patent application
- polishing pad
- substrate
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 159
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000007517 polishing process Methods 0.000 title claims abstract description 23
- 238000001514 detection method Methods 0.000 claims abstract description 41
- 230000002093 peripheral effect Effects 0.000 claims abstract description 15
- 239000012530 fluid Substances 0.000 claims abstract description 9
- 238000004891 communication Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 22
- 238000012544 monitoring process Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000002861 polymer material Substances 0.000 claims description 4
- 239000004814 polyurethane Substances 0.000 claims description 4
- 229920002635 polyurethane Polymers 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 235000015067 sauces Nutrition 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- -1 hammer dioxide Chemical compound 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001339 C alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 150000007519 polyprotic acids Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/788,082 US6623331B2 (en) | 2001-02-16 | 2001-02-16 | Polishing disk with end-point detection port |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI222389B true TWI222389B (en) | 2004-10-21 |
Family
ID=25143403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090133214A TWI222389B (en) | 2001-02-16 | 2001-12-31 | Polishing pad, method of preparing a polishing pad and method of polishing a substrate |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6623331B2 (enExample) |
| EP (1) | EP1368157B1 (enExample) |
| JP (1) | JP4369122B2 (enExample) |
| CN (1) | CN100503168C (enExample) |
| AU (1) | AU2002306506A1 (enExample) |
| DE (1) | DE60201515T2 (enExample) |
| TW (1) | TWI222389B (enExample) |
| WO (1) | WO2002064315A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7374477B2 (en) * | 2002-02-06 | 2008-05-20 | Applied Materials, Inc. | Polishing pads useful for endpoint detection in chemical mechanical polishing |
| US8485862B2 (en) | 2000-05-19 | 2013-07-16 | Applied Materials, Inc. | Polishing pad for endpoint detection and related methods |
| US6599765B1 (en) * | 2001-12-12 | 2003-07-29 | Lam Research Corporation | Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection |
| US6913514B2 (en) * | 2003-03-14 | 2005-07-05 | Ebara Technologies, Inc. | Chemical mechanical polishing endpoint detection system and method |
| US7354334B1 (en) * | 2004-05-07 | 2008-04-08 | Applied Materials, Inc. | Reducing polishing pad deformation |
| US7018581B2 (en) | 2004-06-10 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of forming a polishing pad with reduced stress window |
| US7252871B2 (en) * | 2004-06-16 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad having a pressure relief channel |
| US20060286906A1 (en) * | 2005-06-21 | 2006-12-21 | Cabot Microelectronics Corporation | Polishing pad comprising magnetically sensitive particles and method for the use thereof |
| US20060291530A1 (en) * | 2005-06-23 | 2006-12-28 | Alexander Tregub | Treatment of CMP pad window to improve transmittance |
| US20070037487A1 (en) * | 2005-08-10 | 2007-02-15 | Kuo Charles C | Polishing pad having a sealed pressure relief channel |
| TWI287486B (en) * | 2006-05-04 | 2007-10-01 | Iv Technologies Co Ltd | Polishing pad and method thereof |
| US7678700B2 (en) * | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| US7998866B2 (en) * | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| US7455571B1 (en) | 2007-06-20 | 2008-11-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Window polishing pad |
| US9017140B2 (en) | 2010-01-13 | 2015-04-28 | Nexplanar Corporation | CMP pad with local area transparency |
| CN102133734B (zh) * | 2010-01-21 | 2015-02-04 | 智胜科技股份有限公司 | 具有侦测窗的研磨垫及其制造方法 |
| US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
| CN102441839B (zh) * | 2011-11-11 | 2014-06-04 | 上海华力微电子有限公司 | 提高固定研磨料在研磨垫上进行cmp工艺稳定性的方法 |
| US20140120802A1 (en) * | 2012-10-31 | 2014-05-01 | Wayne O. Duescher | Abrasive platen wafer surface optical monitoring system |
| TWI518176B (zh) * | 2015-01-12 | 2016-01-21 | 三芳化學工業股份有限公司 | 拋光墊及其製造方法 |
| US9475168B2 (en) | 2015-03-26 | 2016-10-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad window |
| US10569383B2 (en) * | 2017-09-15 | 2020-02-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Flanged optical endpoint detection windows and CMP polishing pads containing them |
| JP7162465B2 (ja) | 2018-08-06 | 2022-10-28 | 株式会社荏原製作所 | 研磨装置、及び、研磨方法 |
| JP7083722B2 (ja) * | 2018-08-06 | 2022-06-13 | 株式会社荏原製作所 | 研磨装置、及び、研磨方法 |
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| US6146242A (en) * | 1999-06-11 | 2000-11-14 | Strasbaugh, Inc. | Optical view port for chemical mechanical planarization endpoint detection |
| US6077147A (en) | 1999-06-19 | 2000-06-20 | United Microelectronics Corporation | Chemical-mechanical polishing station with end-point monitoring device |
| JP3508747B2 (ja) | 2001-08-08 | 2004-03-22 | 株式会社ニコン | 研磨パッド及びウエハ研磨装置 |
-
2001
- 2001-02-16 US US09/788,082 patent/US6623331B2/en not_active Expired - Lifetime
- 2001-12-31 TW TW090133214A patent/TWI222389B/zh not_active IP Right Cessation
-
2002
- 2002-02-05 DE DE60201515T patent/DE60201515T2/de not_active Expired - Lifetime
- 2002-02-05 AU AU2002306506A patent/AU2002306506A1/en not_active Abandoned
- 2002-02-05 JP JP2002564089A patent/JP4369122B2/ja not_active Expired - Fee Related
- 2002-02-05 EP EP02740116A patent/EP1368157B1/en not_active Expired - Lifetime
- 2002-02-05 CN CNB028034600A patent/CN100503168C/zh not_active Expired - Fee Related
- 2002-02-05 WO PCT/US2002/004587 patent/WO2002064315A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004522598A (ja) | 2004-07-29 |
| US20020115379A1 (en) | 2002-08-22 |
| JP4369122B2 (ja) | 2009-11-18 |
| AU2002306506A1 (en) | 2002-08-28 |
| CN1484568A (zh) | 2004-03-24 |
| WO2002064315A1 (en) | 2002-08-22 |
| US6623331B2 (en) | 2003-09-23 |
| WO2002064315A8 (en) | 2004-04-08 |
| EP1368157A1 (en) | 2003-12-10 |
| DE60201515D1 (de) | 2004-11-11 |
| DE60201515T2 (de) | 2005-02-03 |
| CN100503168C (zh) | 2009-06-24 |
| EP1368157B1 (en) | 2004-10-06 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |