TW587292B - Method for wet treatment of disc shaped articles - Google Patents
Method for wet treatment of disc shaped articles Download PDFInfo
- Publication number
- TW587292B TW587292B TW092102882A TW92102882A TW587292B TW 587292 B TW587292 B TW 587292B TW 092102882 A TW092102882 A TW 092102882A TW 92102882 A TW92102882 A TW 92102882A TW 587292 B TW587292 B TW 587292B
- Authority
- TW
- Taiwan
- Prior art keywords
- dish
- shaped object
- liquid
- distance
- cover
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000007788 liquid Substances 0.000 claims abstract description 64
- 238000005530 etching Methods 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000005368 silicate glass Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 2
- 239000005388 borosilicate glass Substances 0.000 claims 2
- 244000025254 Cannabis sativa Species 0.000 claims 1
- -1 button Chemical compound 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 claims 1
- 229910052912 lithium silicate Inorganic materials 0.000 claims 1
- 239000005365 phosphate glass Substances 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- 150000004760 silicates Chemical class 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 73
- 239000010410 layer Substances 0.000 description 55
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 16
- 239000003153 chemical reaction reagent Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 241001674048 Phthiraptera Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AT0034802A AT411335B (de) | 2002-03-06 | 2002-03-06 | Verfahren zum nassbehandeln von scheibenförmigen gegenständen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200304181A TW200304181A (en) | 2003-09-16 |
| TW587292B true TW587292B (en) | 2004-05-11 |
Family
ID=3672349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092102882A TW587292B (en) | 2002-03-06 | 2003-02-12 | Method for wet treatment of disc shaped articles |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7279116B2 (de) |
| EP (1) | EP1483778B1 (de) |
| JP (1) | JP4537714B2 (de) |
| KR (1) | KR100675266B1 (de) |
| CN (1) | CN100347810C (de) |
| AT (2) | AT411335B (de) |
| AU (1) | AU2003205771A1 (de) |
| DE (1) | DE60336713D1 (de) |
| TW (1) | TW587292B (de) |
| WO (1) | WO2003075324A1 (de) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE417356T1 (de) * | 2000-10-31 | 2008-12-15 | Sez Ag | Vorrichtung zur flüssigkeitsbehandlung von scheibenförmigen gegenständen |
| US7070661B2 (en) * | 2003-08-22 | 2006-07-04 | Axcelis Technologies, Inc. | Uniform gas cushion wafer support |
| DE20318462U1 (de) * | 2003-11-26 | 2004-03-11 | Infineon Technologies Ag | Anordnung elektronischer Halbleiterbauelemente auf einem Trägersystem zur Behandlung der Halbleiterbauelemente mit einem flüssigen Medium |
| US20070110895A1 (en) * | 2005-03-08 | 2007-05-17 | Jason Rye | Single side workpiece processing |
| US8082932B2 (en) * | 2004-03-12 | 2011-12-27 | Applied Materials, Inc. | Single side workpiece processing |
| US7938942B2 (en) * | 2004-03-12 | 2011-05-10 | Applied Materials, Inc. | Single side workpiece processing |
| US8104488B2 (en) * | 2006-02-22 | 2012-01-31 | Applied Materials, Inc. | Single side workpiece processing |
| JP4641964B2 (ja) * | 2006-03-30 | 2011-03-02 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
| JP5478604B2 (ja) * | 2008-03-31 | 2014-04-23 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | シリコンウェハの端部をエッチングするための方法 |
| EP2359390A1 (de) * | 2008-11-19 | 2011-08-24 | MEMC Electronic Materials, Inc. | Verfahren und system zum entfernen des rands eines halbleiterwafers |
| JP5513432B2 (ja) * | 2011-03-31 | 2014-06-04 | 大日本スクリーン製造株式会社 | 基板周縁処理装置及び基板周縁処理方法 |
| JP5341939B2 (ja) * | 2011-03-31 | 2013-11-13 | 大日本スクリーン製造株式会社 | 基板周縁処理装置および基板周縁処理方法 |
| JP6303255B2 (ja) * | 2011-12-02 | 2018-04-04 | 株式会社リコー | 面発光レーザ素子及び原子発振器 |
| US8853054B2 (en) | 2012-03-06 | 2014-10-07 | Sunedison Semiconductor Limited | Method of manufacturing silicon-on-insulator wafers |
| EP3078462A1 (de) * | 2013-12-03 | 2016-10-12 | Harmotec Co., Ltd. | Haltevorrichtung, haltesystem, steuerungsverfahren und fördervorrichtung |
| US20160300748A1 (en) * | 2013-12-03 | 2016-10-13 | Harmotec Co., Ltd. | Conveyance equipment |
| US10501839B2 (en) | 2018-04-11 | 2019-12-10 | General Electric Company | Methods of removing a ceramic coating from a substrate |
| US11661646B2 (en) | 2021-04-21 | 2023-05-30 | General Electric Comapny | Dual phase magnetic material component and method of its formation |
| US11926880B2 (en) | 2021-04-21 | 2024-03-12 | General Electric Company | Fabrication method for a component having magnetic and non-magnetic dual phases |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT389959B (de) * | 1987-11-09 | 1990-02-26 | Sez Semiconduct Equip Zubehoer | Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben |
| AT407312B (de) * | 1996-11-20 | 2001-02-26 | Sez Semiconduct Equip Zubehoer | Rotierbarer träger für kreisrunde, scheibenförmige gegenstände, insbesondere halbleiterwafer oder -substrate |
| ATE211855T1 (de) * | 1999-04-28 | 2002-01-15 | Sez Semiconduct Equip Zubehoer | Vorrichtung und verfahren zur flüssigkeitsbehandlung von scheibenförmigen gegenständen |
| ATE417356T1 (de) | 2000-10-31 | 2008-12-15 | Sez Ag | Vorrichtung zur flüssigkeitsbehandlung von scheibenförmigen gegenständen |
-
2002
- 2002-03-06 AT AT0034802A patent/AT411335B/de not_active IP Right Cessation
-
2003
- 2003-02-12 TW TW092102882A patent/TW587292B/zh not_active IP Right Cessation
- 2003-02-17 AU AU2003205771A patent/AU2003205771A1/en not_active Abandoned
- 2003-02-17 AT AT03702646T patent/ATE505811T1/de not_active IP Right Cessation
- 2003-02-17 CN CNB038051613A patent/CN100347810C/zh not_active Expired - Fee Related
- 2003-02-17 KR KR1020047013228A patent/KR100675266B1/ko not_active Expired - Fee Related
- 2003-02-17 EP EP03702646A patent/EP1483778B1/de not_active Expired - Lifetime
- 2003-02-17 WO PCT/EP2003/001568 patent/WO2003075324A1/en not_active Ceased
- 2003-02-17 DE DE60336713T patent/DE60336713D1/de not_active Expired - Lifetime
- 2003-02-17 US US10/506,473 patent/US7279116B2/en not_active Expired - Fee Related
- 2003-02-17 JP JP2003573683A patent/JP4537714B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4537714B2 (ja) | 2010-09-08 |
| ATA3482002A (de) | 2003-05-15 |
| CN100347810C (zh) | 2007-11-07 |
| AU2003205771A1 (en) | 2003-09-16 |
| EP1483778A1 (de) | 2004-12-08 |
| WO2003075324A1 (en) | 2003-09-12 |
| TW200304181A (en) | 2003-09-16 |
| EP1483778B1 (de) | 2011-04-13 |
| JP2005519466A (ja) | 2005-06-30 |
| KR100675266B1 (ko) | 2007-01-29 |
| CN1639842A (zh) | 2005-07-13 |
| US7279116B2 (en) | 2007-10-09 |
| AT411335B (de) | 2003-12-29 |
| US20050150867A1 (en) | 2005-07-14 |
| DE60336713D1 (de) | 2011-05-26 |
| KR20040086442A (ko) | 2004-10-08 |
| ATE505811T1 (de) | 2011-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW587292B (en) | Method for wet treatment of disc shaped articles | |
| US7172674B2 (en) | Device for liquid treatment of wafer-shaped articles | |
| CN108249957B (zh) | 干式清洁陶瓷物品的方法 | |
| KR101473130B1 (ko) | 초고속 습식 에칭 장치 | |
| JP2004006618A (ja) | 基板処理装置および基板処理方法 | |
| JP2004006672A (ja) | 基板処理方法および基板処理装置 | |
| CN100355021C (zh) | 衬底处理设备和衬底处理方法 | |
| KR20190013470A (ko) | 기판 처리 방법 및 기판 처리 장치 | |
| JP2640999B2 (ja) | 回転式表面処理方法及びその方法を実施するための回転式表面処理装置 | |
| JP4702920B2 (ja) | 基板処理方法および基板処理装置 | |
| WO2005054543A1 (ja) | クリーニング方法 | |
| TWI485748B (zh) | 基板處理方法及基板處理裝置 | |
| US20080308122A1 (en) | Process For Cleaning, Drying and Hydrophilizing A Semiconductor Wafer | |
| JP4062236B2 (ja) | 島状突起修飾部品及びその製造方法並びにそれを用いた装置 | |
| EP1889284B1 (de) | Vorrichtung und verfahren zur flüssigbehandlung waferförmiger artikel | |
| JP2003203900A (ja) | ウェハ処理装置およびウェハ処理方法 | |
| JP2012531735A (ja) | 半導体ウエハを処理するための方法 | |
| JP2009021617A (ja) | 基板処理方法 | |
| KR20230167438A (ko) | 기판 처리 방법 및 기판 처리 장치 | |
| TW201241911A (en) | Liquid treatment method, liquid treatment device and storage medium | |
| US6274504B2 (en) | Minimizing metal corrosion during post metal solvent clean | |
| JP2012216624A (ja) | 基板処理装置および基板処理装置の清掃装置 | |
| WO2020261868A1 (ja) | 基板処理装置および基板処理方法 | |
| JP2006351805A (ja) | 基板処理方法および基板処理装置 | |
| JP2002025970A (ja) | 基板の洗浄方法ならびにその装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |